JP2737053B2 - Gallium nitride based compound semiconductor light emitting device - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor light emitting device capable of emitting light in a visible single wavelength, particularly in a blue to violet region and in an ultraviolet region.

The semiconductor light emitting device of the present invention is obtained by the present inventors by using ((Al _x Ga _{1 -x} ) _y In _{1 -y} N: 0 ≤ x ≤ 1,0 ≤ y ≤
This is a light emitting device having a new structure using a p-type semiconductor layer composed of 1) and an n-type semiconductor layer with controlled conductivity.

[0003]

2. Description of the Related Art Currently, the shortest wavelength current injection type semiconductor light emitting device which is practically used is made of indium gallium aluminum phosphide (InGaAlP) based crystal. Its oscillation wavelength is in the visible long wavelength region, i.e., in the red region of 0.6.
It belongs to the band of 0.7 μm.

[0004]

However, further,
It is difficult to realize a semiconductor light emitting device capable of emitting light in a blue, violet, or ultraviolet region, which is a short wavelength, in terms of physical properties. It is necessary to use a semiconductor material having a wider band gap. (Al _x Ga _1-x ) _y In _1-y N is one of the candidates.

[0005] (Al _x Ga _1-x ) _y In _1-y N), in particular, GaN
(300K) has been confirmed to be stimulated emission by photoexcitation (H. Amano et al .; Japanese Journal of Applied Physics)
Vol. 29, 1990, pp. L205-L206). Therefore, there is a possibility that a light emitting element such as a laser or an LED can be formed using the semiconductor.

However, it is difficult to produce a p-type single crystal thin film from the above-mentioned compound semiconductors, and a low-resistance p-type (Al _x
It is difficult to realize a light emitting element by current injection with high luminous efficiency using a Ga _1-x ) _y In _1-y N semiconductor.

SUMMARY OF THE INVENTION The present invention has been made to solve the above-mentioned problems, and an object of the present invention is to provide a light-emitting element having a high luminous efficiency in a short-wavelength blue, violet or ultraviolet region. That is.

[0008]

According to a first aspect of the present invention, an n-type semiconductor layer and a p-type semiconductor layer each having a large forbidden band are provided on both sides of a light emitting layer made of a semiconductor having a relatively small forbidden band. In a gallium nitride-based compound semiconductor light emitting device having a substrate and a growth temperature of an n-type semiconductor layer on the substrate
Buffer layer formed at lower temperature and formed on buffer layer
Gallium nitride-based compound doped with silicon (Si)
An n-type semiconductor layer made of a semiconductor, and a
From undoped gallium nitride-based compound semiconductor
A light-emitting layer consisting of magnesium (M
g) doped gallium nitride-based compound
A p-type semiconductor layer made of a semiconductor .

The invention according to claim 2 is characterized in that the buffer layer is made of a group III nitride semiconductor. According to a third aspect of the present invention, the n-type semiconductor layer, the p-type semiconductor layer, and the light emitting layer have different composition ratios ((Al _x Ga _{1 -x} ) _y In _{1 -y} N: 0). ≤x ≤1,
0 ≦ y ≦ 1). The invention according to claim 4 is characterized in that the device has a substrate made of sapphire, Si, 6H-SiC or GaN. Further, the invention according to claim 5 is characterized in that n
Type semiconductor layer or p-type semiconductor layer and each electrode
A high carrier concentration layer is provided.

[0010]

[Action and Effect] ((Al _x Ga _1-x ) _y In _1-y N: 0 ≦ x ≦ 1,0 ≦ y
≦ 1) In semiconductors, the present inventors have made it possible to produce a layer having low resistance and exhibiting p-type conductivity and a layer exhibiting n-type conductivity whose conductivity can be set to a desired value. As a result, it has become possible to manufacture and emit a light emitting element of a carrier injection type having a high luminous efficiency and made of the above gallium nitride-based compound semiconductor. In addition, since the light emitting layer was non-doped, the light emitted at the band edge was emitted, so that the half width of the light emission spectrum was narrowed and the light emission efficiency was improved. Also, an n-type semiconductor layer
Buffer layer formed at a temperature lower than the growth temperature
And an n-type semiconductor layer is formed on the buffer layer.
Therefore, the crystallinity of the layers sequentially formed thereon is improved.
I was able to. As a result, the Si-added n-type semiconductor layer
Low conductivity can be obtained with good controllability.
The resistivity of the p-type semiconductor layer can be reduced. Also, n-type
Addition of Si to semiconductor layer lowers crystallinity of n-type semiconductor layer
As a result, when the crystallinity of the p-type semiconductor layer is deteriorated,
Since the optical layer is non-doped, the crystal of the p-type semiconductor layer
Properties can be improved and a p-type low resistance can be obtained. These conclusions
As a result, electrons are efficiently injected from the n-type semiconductor layer to the light emitting layer.
And holes are efficiently injected from the p-type semiconductor layer.
Also, an n-type semiconductor layer or a p-type semiconductor layer and respective electrodes
By providing a layer with a high carrier concentration between
Mic characteristics can be improved.

According to the present invention, (Al _x Ga
_1-x ) _y In _1-y N N _- type conductivity and n-type conductivity can be controlled, and the emission layer is non-doped, so that the emission wavelength and high emission intensity in the blue to purple and ultraviolet regions A semiconductor light emitting device having a narrow spectral half width having the following characteristics is realized.

[0012]

SUMMARY OF THE INVENTION In the above invention, sapphire, silicon (Si), 6H silicon carbide (6H-SiC) is used as the substrate for preparing aluminum gallium indium nitride (Al _x Ga _{1 -x} ) _y In _{1 -y} N single crystal. Alternatively, gallium nitride (GaN) can be used.

When sapphire is used as the substrate, it is preferable that the buffer layer be a layer containing, for example, an AlN thin film deposited at least at a low temperature (eg, about 600 ° C.).

When Si is used as a substrate, at least 3C-SiC
It is desirable that the buffer layer be a thin film or a layer including two layers of a 3C-SiC thin film and an AlN thin film.

When 6H-SiC is used as a substrate, it is not directly or Ga
It is desirable that N be a buffer layer. When GaN is used as a substrate, a single crystal is directly produced. Si, 6H-SiC and GaN
Is used as a substrate, an n-type single crystal is used.

First, the case of producing a pn junction structure using crystals of the same composition will be described. When sapphire is used as the substrate, the substrate temperature is set to a desired value (for example, 600 ° C.) immediately before (Al _x Ga _1-x ) _y In _1-y N is grown, and at least aluminum (Al) is introduced into the growth furnace. ) And a hydroxide of nitrogen are introduced to form an AlN thin film buffer layer on the sapphire substrate surface.

Thereafter, the introduction of the compound containing Al is stopped, and the substrate temperature is reset. Then, a compound containing Al, a compound containing gallium (Ga) and a compound containing indium (In) are introduced so as to have a desired mixed crystal composition, and n-type (Al _x Ga _1-x ) is introduced.
_y In _1-y N A single crystal is grown.

In this case, in order to lower the resistivity of the n-type single crystal, Si, oxygen (O), sulfur (S), selenium (Se), tellurium (Te) are used.
For example, a compound containing an element serving as a donor impurity may be introduced at the same time.

In the case of doping with a donor impurity, the concentration may be uniform in the n-layer.
Further, in order to facilitate the formation of the n-layer ohmic electrode, the n-layer may be doped at a high concentration at the initial stage of growth and may not be doped near the pn junction or may be doped at a low concentration.

Next, the wafer is once taken out of the growth furnace, a part of the sample surface is covered with a material serving as a mask for selective growth, for example, silicon oxide (SiO ₂ ), and the wafer is returned to the growth furnace again. Alternatively, the growth is continued without taking out the wafer.

At least Al having a desired mixed crystal composition
, Compounds containing Ga, compounds containing In and compounds that become hydrides and acceptor impurities of nitrogen, such as beryllium (Be), magnesium (Mg), zinc (Zn), cadmium (cd), and carbon (C). Is introduced into a growth furnace to grow an (Al _x Ga _{1 -x} ) _y In _{1 -y} N single crystal (p layer) doped with acceptor impurities.

The growth thickness of the acceptor-doped layer is determined in consideration of the penetration depth of the electron beam when performing the electron beam irradiation treatment. Next, the wafer is taken out of the growth furnace, and the acceptor dope (Al _x
Ga _1-x ) _y In _1-y N layer is irradiated with an electron beam.

The region to be irradiated with the electron beam is formed on the whole or a part of the sample surface, for example, in a strip shape. When the entire sample surface is irradiated with an electron beam, the acceptor-doped layer (p
An insulating layer is deposited on the layer, a strip-shaped window is opened in a part of the insulating layer, and a metal is contacted on the window to form an ohmic electrode for the p-layer. In the case where the electron beam irradiation treatment is performed in a strip shape, a metal is contacted so as to cover a part or the whole of the region irradiated with the electron beam, and an ohmic electrode for the p layer is formed.

Finally, the shape of the portion where the metal contacts the p layer is a strip. Of course, in the case of surface emission, the shape of the electrode may be a rectangular shape which is substantially equal to the upper surface of the element.
The electrode for the n-layer is formed after removing the mask for selective growth and thereafter, or a part of the acceptor-doped layer (p-layer) is etched from the surface side to open a window for the lower n-layer, and a metal is formed. The contact is made to form an ohmic electrode.

When n-type Si, 6H-SiC or GaN is used as a substrate, the device is manufactured by substantially the same means. However, the selective growth technique is not used, and the electrodes for the p layer and the n layer are formed on both the upper and lower sides of the device. That is, the n-layer electrode contacts the metal on the entire back surface of the substrate to form an ohmic electrode.

The above is the basic method for manufacturing a semiconductor light emitting device having a pn junction structure using crystals of the same composition.
Also in the case of manufacturing a device using a junction of crystals of different mixed crystal compositions, that is, a so-called hetero junction, the formation of a pn junction is the same as the case of using the above-described junction of crystals of the same mixed crystal composition.

When a single heterojunction is formed, in addition to a pn junction formed of crystals having the same mixed crystal composition, an n-type crystal having a large forbidden band width is further joined to the n-layer to form holes serving as minority carriers. A diffusion blocking layer.

Since the light emission near the forbidden band width of the (Al _x Ga _{1 -x} ) _y In _{1 -y} N based single crystal is particularly strong in the n-layer, it is desirable to use an n-type crystal for the light-emitting layer. The band structure of the (Al _x Ga _1-x ) _y In _1-y N-based single crystal is (Al _x Ga _1-x ) _y In _1-y As-based single crystal or (Al _x Ga _1-x ) _y I
It is similar to the n _1-y P system single crystal, and it is considered that the ratio of band discontinuity is larger in the conduction band than in the valence band. But,
In an (Al _x Ga _{1 -x} ) _y In _{1 -y} N based single crystal, the effective mass of holes is relatively large, so that the n-type heterojunction effectively acts as a hole diffusion inhibitor.

When two heterojunctions are formed, n-type and p-type crystals having a large forbidden band are joined to both sides of an n-type crystal having a relatively small forbidden band, respectively. The structure sandwiches the crystal.

When a large number of heterojunctions are formed, a plurality of thin film crystals of an n-type having a relatively large forbidden band width and a plurality of thin film crystals of a relatively small forbidden band width are joined to each other, and n is formed on both sides thereof. Type and p-type crystals are joined to sandwich a number of heterojunctions.

Since the refractive index of light near the forbidden band width of the (Al _x Ga _1-x ) _y In _1-y N-based single crystal is larger as the forbidden band width is smaller, the other (Al _x Ga _1-x) As in semiconductor light-emitting devices using _y In _1-y As-based single crystals or (Al _x Ga _1-x ) _y In _1-y P-based single crystals, a heterostructure sandwiched between crystals with a large bandgap can confine light. Is also effective.
In addition, since the light emitting layer is non-doped, light emission becomes band edge light emission, and light emission with high luminous efficiency and a narrow spectrum half width can be achieved.

In the case where a hetero junction is used, the carrier concentration in the vicinity of the portion in contact with the electrode may be made high to facilitate the composition of the ohmic electrode, as in the case of a pn junction made of crystals of the same composition.

The carrier concentration of the n-type crystal is controlled by the doping concentration of the donor impurity, and the carrier concentration of the p-type crystal is controlled by the doping concentration of the acceptor impurity and the electron beam irradiation processing conditions. In addition, in order to facilitate the formation of an ohmic electrode, a crystal which can easily realize a high carrier concentration may be further bonded for contact with a metal.

[0034]

DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention will be described below with reference to specific embodiments. ((Al _x Ga _1-x ) _y In _1-y N: 0 ≦ x ≦ 1, 0 ≦ y ≦ 1) A lateral organometallic compound vapor phase epitaxy apparatus was used for producing a single crystal for a semiconductor light emitting device. Sapphire, Si, 6H-S as substrate below
The growth procedure is shown for each of iC and GaN.

(1) Sapphire Substrate FIG. 1 is a sectional view showing the structure of a semiconductor light emitting device using a sapphire substrate. In FIG. 1, a sapphire substrate 1 having a (0001) plane as a crystal growth surface is organically washed and then placed in a crystal growth section of a crystal growth apparatus. After evacuation of the growth furnace, hydrogen is supplied and the temperature is raised to about 1200 ° C. Thus, the hydrocarbon-based gas adhering to the surface of the sapphire substrate 1 is removed to some extent.

Next, the temperature of the sapphire substrate 1 is lowered to about 600 ° C., trimethylaluminum (TMA) and ammonia (NH ₃ ) are supplied, and the AlN layer 2 having a thickness of about 50 nm is formed on the sapphire substrate 1. To form Next, only the supply of TMA is stopped, the substrate temperature is raised to 1040 ° C., and TMA, trimethylgallium (TMG) and silane (SiH ₄ ) are supplied to grow the Si-doped n-type GaAlN layer 3 (n-type semiconductor layer). .

Once the wafer is removed from the growth furnace, GaAl
After masking a part of the surface of the N layer 3 with SiO _2, it is returned to the growth furnace again, evacuated, supplied with hydrogen and NH ₃ , and heated to 1040 ° C. Next, by supplying only TMG, a GaN layer 4 having a thickness of 0.5 μm is grown in a portion not masked with SiO ₂ . Thereby, a non-doped light emitting layer is obtained. Next, TMA and biscyclopentadienyl magnesium
(Cp ₂ Mg) is further supplied to grow the doped GaAlN layer 5 (p-type semiconductor layer) to 0.5 μm.

Next, the SiO ₂ used as the mask is removed with a hydrofluoric acid-based etchant. Next, the doped GaAlN layer 5
After depositing the SiO ₂ layer 7 on the (p-type semiconductor layer),
The window 7A is opened in a 50 μm-wide strip shape, moved to a vacuum chamber, and the doped GaAlN layer 5 (p-type semiconductor layer) is irradiated with an electron beam. Tables show typical electron beam irradiation processing conditions.

[Table 1]

Next, the doped GaAlN layer 5 (p-type semiconductor layer)
Metal electrodes are respectively formed on the window 8 and the Si-doped n-type GaAlN layer 3 (n-type semiconductor layer). This is the end of the crystal growth.

(2) In the case of Si substrate FIG. 2 shows the structure of the light emitting device formed on the Si substrate. After the low-resistance n-type Si (111) surface substrate 8 is organically cleaned, the surface oxide is removed by a hydrofluoric acid-based etchant and the substrate 8 is placed on the crystal growth portion. After evacuation of the growth furnace, hydrogen was introduced and the substrate 1000
The temperature of the substrate 8 was increased to a temperature of ℃ to clean the surface of the substrate 8, and then propane (C ₃ H ₈ ) or acetylene (C ₂ H ₂ ) was supplied. Thereby, a 3C-SiC thin film 9 is formed on the surface.

Thereafter, the inside of the growth furnace is once evacuated to remove excess gas. Next, hydrogen is supplied to the growth furnace to set the substrate temperature to 600 ° C., and TMA and NH ₃ are supplied to remove the AlN thin film 10.
It is formed on the 3C-SiC thin film 9. Next, only the supply of TMA is stopped, the substrate temperature is set to 1040 ° C., and TMG, TMA and SiH ₄ are supplied to supply the silicon-doped n-type GaAlN layer 11 (n-type semiconductor layer).
Grow.

Next, the supply of only TMA and SiH ₄ was stopped and GaN
Layer 12 was grown 0.5 μm. Thus, a non-doped light emitting layer was formed. Next, TMA and CP ₂ Mg are added, and a Mg-doped GaAlN layer 13 (p-type semiconductor layer) is grown to a thickness of 0.5 μm.
Next, SiO ₂ is deposited on the Mg-doped GaAlN layer 13 (p-type semiconductor layer).
After the layer 15 is deposited, the window 1 is formed into a strip 1 mm long and 50 μm wide.
5A is opened, transferred to a vacuum chamber, and the Mg-doped GaAlN layer 13 (p-type semiconductor layer) is irradiated with an electron beam. The irradiation conditions of the electron beam are the same as in the previous embodiment. Thereafter, an electrode 14A for the Mg-doped GaAlN layer 13 (p-type semiconductor layer) was formed from the SiO ₂ layer 15 side, and an electrode 14B for the n-type GaAlN layer 11 (n-type semiconductor layer) was formed on the back surface of the substrate 8. .

(3) In the case of 6H-SiC substrate FIG. 3 shows a light emitting device formed on a 6H-SiC substrate. The (0001) plane substrate 16 of the low-resistance n-type 6H-SiC is organically cleaned, etched with an aqua regia etchant, and then placed in a crystal growth part. After evacuation of the growth furnace, hydrogen is supplied and the temperature is increased to 1200 ° C. Next, hydrogen was supplied to the growth furnace and the substrate temperature was set at 10
At 40 ° C., TMG, SiH ₄ and NH ₃ are supplied to grow the n-type GaN buffer layer 17 to about 0.5 to 1 μm. Next, TMA is added to grow an n-type GaAlN layer 18 (n-type semiconductor layer) on the n-type GaN buffer layer 17.

Next, on the n-type GaAlN layer 18, the Si
A GaN layer 19 is formed to a thickness of 0.5 μm in the same structure as the light emitting device using the substrate, using the same gas, and under the same growth conditions. Thereby, a non-doped light emitting layer is obtained. Next, as in the previous example, a Mg-doped GaAlN layer 20 (p-type semiconductor layer) was formed to a thickness of 0.5 μm. Next, Mg-doped GaAl
After depositing the SiO ₂ layer 22 on the N layer 20, it is 1 mm long and 50 μm wide.
m, open the window 22A in a strip shape, transfer to a vacuum chamber,
The Mg-doped GaAlN layer 20 (p layer) was irradiated with an electron beam. The irradiation conditions of the electron beam are the same as in the previous embodiment.

Thereafter, from the SiO ₂ layer 22 side, Mg-doped GaAlN
Forming an electrode 21A for the layer 20 (p-type semiconductor layer);
On the other hand, an electrode 21B for the n-type GaAlN layer 18 (n-type semiconductor layer) was formed on the back surface of the substrate 16.

(4) GaN Substrate FIG. 4 shows a light emitting device formed on a GaN substrate. Low resistance n
After cleaning the (0001) plane substrate 23 of type GaN organically, etching with a phosphoric acid + sulfuric acid type etchant,
Is set in the crystal growth part. Next, after evacuation of the growth furnace, hydrogen and NH ₃ were supplied, and the substrate temperature was set to 1040 ° C.
Leave for 5 minutes. Next, TMG and SiH ₄ are further added to add n-type
The GaN buffer layer 24 was formed to a thickness of 0.5 to 1 μm.

Next, TMA was added to grow an n-type GaAlN layer (n-type semiconductor layer) 25. Next, a non-doped GaN layer (light-emitting layer) 26 is formed on the n-type GaAlN layer 25 in the same structure, using the same gas, and under the same growth conditions as the light-emitting element using the Si substrate. μm, Mg-doped GaAlN
The layer 27 (p-type semiconductor layer) was formed to a thickness of 0.5 μm.
Next, after depositing the SiO ₂ layer 29 on the Mg-doped GaAlN layer 27, a window 29A is opened in a rectangular shape of 1 mm in length and 50 μm in width, moved to a vacuum chamber, and the Mg-doped GaAlN layer 27 (p-type semiconductor layer) Was irradiated with an electron beam. The irradiation conditions of the electron beam are the same as in the previous embodiment.

Thereafter, from the SiO ₂ layer 29 side, Mg-doped GaAlN
Forming an electrode 28A for the layer 27 (p-type semiconductor layer);
On the other hand, an electrode 28B for the n-type GaAlN layer 25 (n-type semiconductor layer) was formed on the back surface of the substrate 23.

The light emitting devices having any of the above structures emitted light at high intensity at room temperature.

[Brief description of the drawings]

FIG. 1 shows a specific example of the present invention fabricated on a sapphire substrate ((Al _x Ga _{1 -x} ) _y In _{1 -y} N: 0 ≦ x ≦ 1, 0 ≦ y ≦ 1)
FIG. 2 is a cross-sectional view illustrating a configuration of a system semiconductor light emitting element.

FIG. 2 shows a ((Al _x Ga _1-x ) _y In _1-y N: 0 ≦ x ≦ 1, 0 ≦ y ≦ 1) system according to a specific embodiment of the present invention fabricated on a Si substrate. FIG. 2 is a cross-sectional view illustrating a configuration of a semiconductor light emitting element.

FIG. 3 shows ((Al _x Ga _1-x ) _y In _1-y N: 0 ≦ x ≦ 1, 0 ≦ y ≦ 1 according to one specific example of the present invention fabricated on a 6H-SiC substrate. FIG. 2 is a cross-sectional view illustrating a configuration of a) semiconductor light emitting element.

FIG. 4 shows ((Al _x Ga _1-x ) _y In _1-y N: 0 ≦ x ≦ 1, 0 ≦ y ≦ 1) according to a specific example of the present invention fabricated on a GaN substrate. FIG. 2 is a cross-sectional view illustrating a configuration of a semiconductor light emitting element.

[Explanation of symbols]

DESCRIPTION OF SYMBOLS 1 ... (0001) plane substrate of sapphire 2, 9, 17 ... AlN buffer layer 3, 11, 18, 25 ... n-type AlGaN layer (n-type semiconductor layer) 4, 12, 19, 26 ... GaN layer (light emitting layer) 5,13,20,27 ... Mg-doped AlGaN layer (p-type semiconductor layer) 7,15,22,29 ... SiO ₂ layer 6A, 14A, 21A, 28A ... electrode (Mg-doped AlGaN
6B, 14B, 21B, 28B ... electrodes (for n-type AlGaN layer (for n-type semiconductor layer))

 ──────────────────────────────────────────────────続 き Continuing from the front page (72) Inventor Nobuo Okazaki No. 1, Nagahata Ochiai, Kasuga-cho, Nishi-Kasugai-gun, Aichi Prefecture Inside Toyoda Gosei Co., Ltd. Address Toyoda Gosei Co., Ltd. (72) Inventor Isamu Akasaki 1-38-805, Jyoshin, Nishi-ku, Nagoya-shi, Aichi Prefecture Room (56) References JP-A-59-228776 (JP, A) JP-A-53-20882 (JP, A) JAPANESE JOURNAL OF APPLIED PHYSICS VOL. 28, NO. 12, DECEMBER, 1989, PP. L2112-L2114

Claims (5)

(57) [Claims] 1. A semiconductor device having a relatively large forbidden band and a light emitting layer composed of a semiconductor having a relatively small forbidden band.
In type semiconductor layer and a p-type semiconductor layer gallium nitride compound semiconductor light-emitting device formed by joining a substrate and, at a temperature lower than the growth temperature of the n-type semiconductor layer on the substrate
A buffer layer formed, and a nitride layer formed on the buffer layer and doped with silicon (Si).
An n-type semiconductor layer made of a gallium arsenide-based compound semiconductor ; and a non-doped gallium nitride formed on the n-type semiconductor layer.
A light-emitting layer made of a lithium- based compound semiconductor , and formed on the light-emitting layer, doped with magnesium (Mg)
Gallium nitride-based compound semiconductor
A gallium nitride-based compound semiconductor light emitting device having a p-type semiconductor layer . 2. The gallium nitride-based compound semiconductor light emitting device according to claim 1 , wherein the buffer layer is made of a group III nitride semiconductor. 3. The n-type semiconductor layer, the p-type semiconductor layer,
The light-emitting layer has a composition of ((Al _x Ga _1-x ) _y In _1-y N: 0 ≦ x ≦ 1,0 ≦ y ≦
The gallium nitride-based compound semiconductor light-emitting device according to claim 1 or 2, wherein the light-emitting device comprises: 4. A sapphire, Si, claims 1 to 3 characterized by having a substrate made of 6H-SiC or GaN
The gallium nitride-based compound semiconductor light-emitting device according to any one of the above items. 5. The n-type semiconductor layer or the p-type semiconductor layer
And a layer with a high carrier concentration between each electrode
The method according to any one of claims 1 to 4, wherein
3. The gallium nitride-based compound semiconductor light-emitting device according to item 1.