GB1585827A - Heterostructure semiconductor devices - Google Patents

Heterostructure semiconductor devices Download PDF

Info

Publication number
GB1585827A
GB1585827A GB30075/77A GB3007577A GB1585827A GB 1585827 A GB1585827 A GB 1585827A GB 30075/77 A GB30075/77 A GB 30075/77A GB 3007577 A GB3007577 A GB 3007577A GB 1585827 A GB1585827 A GB 1585827A
Authority
GB
United Kingdom
Prior art keywords
region
heterostructure
type
regions
semiconductor material
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB30075/77A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of GB1585827A publication Critical patent/GB1585827A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/2654—Bombardment with radiation with high-energy radiation producing ion implantation in AIIIBV compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/2654—Bombardment with radiation with high-energy radiation producing ion implantation in AIIIBV compounds
    • H01L21/26546—Bombardment with radiation with high-energy radiation producing ion implantation in AIIIBV compounds of electrically active species
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/2654—Bombardment with radiation with high-energy radiation producing ion implantation in AIIIBV compounds
    • H01L21/26546—Bombardment with radiation with high-energy radiation producing ion implantation in AIIIBV compounds of electrically active species
    • H01L21/26553—Through-implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
    • H01L29/2003—Nitride compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
    • H01L29/201—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds including two or more compounds, e.g. alloys
    • H01L29/205—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds including two or more compounds, e.g. alloys in different semiconductor regions, e.g. heterojunctions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
    • H01L29/207—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds further characterised by the doping material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/0004—Devices characterised by their operation
    • H01L33/002—Devices characterised by their operation having heterojunctions or graded gap
    • H01L33/0025—Devices characterised by their operation having heterojunctions or graded gap comprising only AIIIBV compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Manufacturing & Machinery (AREA)
  • Toxicology (AREA)
  • Health & Medical Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Optics & Photonics (AREA)
  • Electromagnetism (AREA)
  • Semiconductor Lasers (AREA)
  • Led Devices (AREA)

Description

(54) HETEROSTRUCTURE SEMICONDUCTOR DEVICES (71) We, INTERNATIONAL BUSI NESS MACHINES CORPORATION, a Corporation organized and existing under the laws of the State of New York in the United States of America, of Armonk, New York, 10504 United States of America, do hereby declare the invention for which we pray that a patent may be granted to us, and the method by which it is to be performed, to be particularly described in and by the following statement: The invention relates to heterostructure semiconductor devices.
A heterostructure semiconductor device is one of which regions of different semiconductor materials are present in the same device body. Usually the regions of the different semiconductor materials are of opposite conductivity type and form a p-n junction at their interface. There are a variety of useful advantages that are obtained from such a structure. The advantages result from added flexibility in properties of materials, dimensional precision and processing. As an exam ple of the devices that have appeared in the art, the injection laser using a double heterostructure illustrates the interrelated materials, structure and processing advantages that are gained. In the double heterostructure injection laser the central region of one semiconductor material and the two regions of the other semiconductor material produce an electric field at each interface which serves to confine injected carriers to the desired region. At the same time the added flexibility of the different materials permits selecting materials having an index of refraction at the interfaces such as to confine the light to the cavity region. The art has been directed in its development toward many types of devices using heterostructure but one serious limitation which has heretofore existed has been the fact that a large class of compound type semiconductor materials that have very useful properties has exhibited a phenomenon known as selfcompensation and as a result the conductivity is always one type, usually n-type.
The complete, specification of our copending application 30079/77 (Serial No.
1585828) is concerned with imparting -pconductivity to self-compensated compound semiconductor materials. This technique opens up to device use an entire class of compound semiconductor materials with a wide range of physical properties.
According to the invention there is provided a semiconductor heterostructure comprising a first region of a first semiconductor material and a second region of selfcompensating compound semiconductor material different from said first material and having at least part thereof converted to p-type conductivity.
In the accompanying drawings: Figure lisa view of a heterostructure body according to the invention; Figure 2 is a view of a double heterostructure body according to the invention; and Figure 3 is a sketch of a double heterostructure injection laser according to the invention.
The phenomenon of self-compensating in compound semiconductor materials has generally meant that the conductivity is always of one type, usually n-type, so that materials exhibiting this phenomenon heretofore were very restricted in their device usefulness. The phenomenon and a technique for overcoming it are discussed in our copending application mentioned hereinbefore: the following is a brief generalized description.
The phenomenon occurs where one element of the material generates enough lattice defects, commonly vacancies to compensate any concentration of impurities of the desired conductivity type. In practice the phenomenon has been observed to prevent p-type conductivity in large bandgap semiconductors where anion vacancies are more numerous than cation vacancies. If the fermi level in this type of material is located near the valence band with a significant energy separation from a higher level which is the donor ionization energy level, then the total energy of the material can be lowered by generating an anion vacancy ionizing same to its donor state and allowing the resulting electron to drop to the fermi level. This process would allow the fermi level to rise away from the valence band, quenching p-type conductivity.
Referring to Figure 1 a heterostructure body is shown having a first region 2 of a conventional semiconductor material and a second region 3 of a self-compensated different semiconductor material converted to p-type conductivity and forming a p-n junction 4 with the region 2. the p-type conductivity being produced in accordance with our copending application mentioned hereinbefore. Electrodes 5 and 6 are applied to regions 2 and 3, respectively, for device applications standard in the art.
As an example, the region 2 is made of gallium nitride (GaN) and the region 3 is made of aluminium nitride (A1N). The conversion of region 3 to p-type conductivity is accomplished by irradiation with charged particles. which may be electrons. protons or ions. The resulting structure has a bandgap in the region 2 of approximately 3.39 eV and a bandgap in region 3 of approximately 6.2eV.
The device may be fabricated by first providing the region 2 of gallium nitride using the technique set forth by H. Maruska and J.
Tietjen in Applied Physics Letters, Vol. 15, No. 10 November 15. 1969 and paraphrased as follows: A straight tube is provided through which the pertinent gaseous species flow to provide chloride transport of metallic gallium, and subsequent reaction of these transport products with ammonia to form GaN on a substrate surface of a single crystal sapphire (A1203). Since the region 3 will be (A1N) a 111 crystallographic orientation for the substrate is preferably used. The sapphire substrates are mechanically polished to a flat mirror-smooth finish. and then heat-treated in hydrogen at 1200"C. prior to their introduction to the growth apparatus. Typical substrate dimensions are about 2 cm2 in area and about 0.25 mm thick. In the growth procedure. freshly heat-treated substrates are inserted into the deposition zone of the growth chamber and heated in hydrogen at a rate of about 20 C/min. When the final growth temperature is reached. the NH3 flow is started and. after a 15-min. period to allow the NH3 concentration to reach a steadystate value. the HCI flow is started to provide transport of the Ga and deposition of GaN.
The flow rates ofpure HCI and NH3 are about 5 and 400 cm /min. respectively. and an additional 2.5 liters/min of hydrogen is used as a carrier gas.
The conductivity of region 2 is n-type.
Further, GaN other than n-type is not readily produced.
The region 3 of self-compensated semiconductor material is next a plied. In the example of aluminum nitride (A1N) the region 3 is formed on the above-described region 2 by the technique set forth by R.F. Rutz in Applied Physics Letters, Vol. 28, No. 7, April 1976. The technique is paraphrased as follows: A 1-,um-thick layer of A1N is grown on region 2 by rf reactive sputtering at 1000 C.
This layer, serves as a nucleating seed for a growth procedure carried out by placing the A1N-coated GaN region 2, A1N face down on a polycrystalline sintered A1N source wafer, in a tungsten crucible heated to 18500C in a 15% H2, 85% N2 forming gas atmosphere. A vertical temperature gradient promotes the transfer of the A1N from the sintered source to the substrate forming epitaxial single-crystal layers.
The A1N region 3 is n-type conductivity because of the self-compensating phenomenon that is the nature of the A1N material.
The region 3 is now converted to p-type conductivity by bombardment with protons (H+) or depending on the desired resistivity, by the combination of the introduction of an acceptor impurity such as beryllium (Be) and ionized beryllium (Be+) bombardment as set forth in the referenced copending application. The depth of conversion establishes the location of the p-n junction. The resulting heterostructure is useful as an asymetric conducting device or electrical to light conversion and detection device when electrical signals are applied to terminal 5 and 6 or light detection device when light is absorbed by region 1.
Referring next to Figure 2 a view is provided of a double heterostructure body 10 having a first region 15 of semiconductor material of a conductivity. and second and third regions 11 and 12 made of a selfcompensated compound semiconductor material converted to p-conductivity and forming p-n junctions 13 and 14, respectively. with the region 15. The electrodes 16 and 17 are provided for device use.
The structure of Figure 2 may be used as a high temperature transistor, an optical modulator, a light emitting device or an injection laser by application of signals to and via the electrodes 16 and 17.
The heterostructure of Figure 2 using A1N for regions I I and 12 and GaN for region 15.
may be fabricated by growing as set forth by Rutz cited above, the region 11 of A1N on a 1 11 crystallographic orientation substrate of tungsten (W) or aluminium oxide (awl203).
First a 1- m-thick layer is grown by reactive rf sputtering at 10000C. This layer serves as a nucleating seed for a growth procedure carried out by placing the A1N coated substrate face down on a polycrystalline sintered A1N source wafer in a tungsten crucible heated to ~ 1850 C in a 15%H2,85% N2 forming gas atmosphere. A vertical temperature gradient promotes transfer of the A1N from the sintered source to the substrate in an epitaxial layer.
The region 15 of gallium nitride (GaN) is then formed on the region 11 as set forth by Maruska et al cited above. Chloride transport is used for metallic gallium with subsequent reaction of the transPort products with ammonia to deposit (GaN) on the region 11 serving as the substrate. The GaN material formed is n-type. The flow rates of pure HC1 and NH3 are about 5 and 400 cm3/min, respectively, and an additional 2.5 litres/min of hydrogen is used as a carrier gas. With these flow rates, a substrate temperature of 825"C, a Ga-zone temperature of 900"C, and a center zone (that region between the Ga and deposition zones) temperature of 925"C, growth rates of about 0.5,u/min are obtained under steady-state conditions. Typical thicknesses for the deposit for the region 15 are in the range of 50-150,u. Doping can be accomplished, during the growth process, by introducing the dopant to the growth apparatus, either as its hydride or by direct evaporation of the element into a hydrogen carrier gas.
The region 12 is next grown using the technique set forth above for region 11.
Since both regions 11 and 12 are normally n-type it is next necessary to remove the body 10 from the tungstener Al203 substrate and convert the regions 11, 12 to p-type. This is done by either charge particle irradiation or by a combination of acceptor implantation and bombardment as set forth in the refer enced copending application.
Figure 3 illustrates a double heterostruc ture fabricated as an injection laser device. In this type of device electrical energy is con verted to light energy in a region that is designed to simultaneously keep carrier density high and photons confined. The abil ity to use self-compensating compound semi conductor materials, converted to p-type conductivity permits inclusion in the struc ture of many materials with more appropri ate bandgaps and to achieve better index of refraction relationships or matches than heretofore in the art. In this type of device it is desirable that the cavity wherein the car rier population inversion is to occur be of a bandgap such that light of the desired fre quency is produced and that the bandgap is lowered than the outside regions. For effi ciency, it is desirable that the cavity be small enough for high carrier concentration at low current and that the cavity have a higher index of refraction than the outside regions.
This double heterostructure injection laser need have only one p-n junction.
Referring to the injection laser of Figure 3 the device consists of a body 20 mounted on a conducting substrate 21. The body 20 is made up of a region 22 of one conductivity type, for example n, of a for example, selfcompensated compound semiconductor material. The body 20 also contains a region 23 of a semiconductor selected for its bandgap, and index of refraction. Since the conductivity type of this region 23 may be the same as 22, for example n, substantial material selection flexibility has been provided.
The body 20 has an outer layer 24 of selfcompensated semiconductor material of p conductivity type forming a p-n junction 25 with the region 23. Electrodes 26 and 27 are applied to regions 21 and 24, respectively, for electrical signal purposes. A Fabry-Perot interferometer is formed by making faces 28 and 29 parallel.
Since it is desirable that the bandgap be higher in the regions 22 and 24 than in the region 23 and that the index of refraction be lowered in the regions 22 and 24 than in the region 23, the self-compensated compound semiconductor material aluminium nitride (AIN) may be employed, for example in regions 22 and 24, together with for example, the semiconductor material gallium nitride (GaN) or gallium 4 aluminiumxnitride (Galx-AlxN) to form the region 23.
The device should preferably have dimensions of regions 22 and 24 respectively in the range of 1-5 microns and in the range of 0.1-5 microns. The thickness of the region 23, the cavity should be in the range of 500 to 5000 . The substrate contact 21 should be aluminium (Al) and the contact 27 should have a large work function and be beryllium (Be) or gold (Au). The Fabry-Perot faces 28 and 29 may be rendered parallel by the standard techniques of cleaving or polishing.
The region 22 is formed according to the technique set forth by R.F. Rutz cited above and paraphrased as follows: First epitaxially deposit a 1,u thick layer of aluminium nitride (A1N) on 111 crystallographic orientation single crystal tungsten (W) or sapphire (awl 203) by rf reactive sputtering at 10000C. This layer serves as a nucleating seed for further growth where the A1N is placed face down in contact with an A1N sintered source wafer in a tungsten crucible heated to N18500C in a 15% H2, 85% N2 forming gas atmosphere. A vertical temperature gradient promotes the transfer of the A1N and is continued until the range of 1 to 5 microns is achieved. This A1N will be n-type because of vacancy selfcompensating in the region 22.
The region 23 is formed using the material gallium nitride (GaN) as an example, using the technique set forth by Maruska et al cited above and paraphrased as follows: Chloride transport of metallic gallium is reacted at the deposition site with ammonia (NH3) to form gallium nitride (GaN) on the region 22 now acting as substrate. The flow rates of HCI and NH3 are 5 and 400 cc/min, respectively and additional 2.5 litres/min of hydrogen is used as a carrier gas. The gallium zone temperature is 900"C, the region 22 temperature is 825"C and the region between the gallium source and the substrate is 925"C. These conditions produce growth rates of about 0.5 ,u/min and deposition is continued until a layer of 500-5000 is grown. The conductivity type of the GaN material produced is n-type.
The region 24 is next formed using the technique for region 22 using the body now made up of regions 22 and 23 as the substrate. Some beryllium (Be) as a p-type impurity may be included in this step. The region 24 is grown between 0.1 and 5 microns thick.
The region 24 is then converted to p-type conductivity type. A beryllium (Be) coating is placed on region 24 and a beryllium ion source of the kind used in standard ion implantation techniques is employed to introduce beryllium ions. The beryllium (Be+) bombardment takes place at 140 kilowatts, and converts the region 24 to p-type conductivity. The beryllium (Be) coating can serve as part of electrode 27. The substrate of aluminium oxide (awl203) or tungsten (W) is replaced by the conductive substrate 21 and an electrode 26 of aluminium. It should be noted that the fabrication is arranged so that high temperature processing steps are minimized after the p-type conversion.
WHAT WE CLAIM IS: 1. A semiconductor heterostructure comprising a first region of a first semiconductor material and a second region of selfcompensating compound semiconductor material different from said first material and having at least part thereof converted to p-type conductivity.
2. A heterostructure as claimed in claim 1 in which said first region is of n-type conductivity semiconductor material and joins the second region at a p-n junction.
3. A heterostructure as claimed in claim 1 or 2 in which said first region is gallium nitride (GaN).
4. A heterostructure as claimed in claim l, 2 or 3 in which said second region is aluminium nitride (AIN).
5. A heterostructure as claimed in claim 2 comprising a third region additional to said second region. of said p-type conductivity self-compensating compound semiconductor material, said second and third regions each forming a p-n junction with, and being separated by, said first region.
6. A heterostructure as claimed in claim 5 wherein said second and third regions are aluminium nitride (AIN) and said first region is gallium nitride (GaN).
7. A heterostructure as claimed in claim 2 comprising a third region, which third region is of different semiconductor material to said first region, said third region being of n-type conductivity self-compensated semiconductor material, and being contiguous with said first region on the opposite side to said second region.
8. A heterostructure as claimed in claim 7, in which said second and third regions are of aluminium nitride (AIN) and said first region is of galluium nitride (GaN).
9. A heterostructure of claim 7 wherein said second and third regions are of aluminium nitride (AIN and said first region is gallium aluminium nitride (Gal-xALN).
10. A heterostructure s claimed in claim 7, 8 or 9 formed as an injection laser of the type wherein carriers injected at a p-n junction are confined to a population inversion cavity bounded by outside regions having a different index of refraction to the cavity.
11. A semiconductor heterostructure formed as an injection laser of the type wherein carriers injected at a p-n junction are confined to a population inversion cavity bounded by outside regions that have a change of index refraction relative to the cavity, the cavity being formed of a semiconductor material different from that of said outside regions and wherein at least one region is of self-compensating compound semiconductor material converted to p-type conductivity.
12. A semiconductor heterostructure substantially as described with reference to Figure 1, 2 or 3 of the accompanying drawings.
**WARNING** end of DESC field may overlap start of CLMS **.

Claims (12)

**WARNING** start of CLMS field may overlap end of DESC **. the technique set forth by Maruska et al cited above and paraphrased as follows: Chloride transport of metallic gallium is reacted at the deposition site with ammonia (NH3) to form gallium nitride (GaN) on the region 22 now acting as substrate. The flow rates of HCI and NH3 are 5 and 400 cc/min, respectively and additional 2.5 litres/min of hydrogen is used as a carrier gas. The gallium zone temperature is 900"C, the region 22 temperature is 825"C and the region between the gallium source and the substrate is 925"C. These conditions produce growth rates of about 0.5 ,u/min and deposition is continued until a layer of 500-5000 is grown. The conductivity type of the GaN material produced is n-type. The region 24 is next formed using the technique for region 22 using the body now made up of regions 22 and 23 as the substrate. Some beryllium (Be) as a p-type impurity may be included in this step. The region 24 is grown between 0.1 and 5 microns thick. The region 24 is then converted to p-type conductivity type. A beryllium (Be) coating is placed on region 24 and a beryllium ion source of the kind used in standard ion implantation techniques is employed to introduce beryllium ions. The beryllium (Be+) bombardment takes place at 140 kilowatts, and converts the region 24 to p-type conductivity. The beryllium (Be) coating can serve as part of electrode 27. The substrate of aluminium oxide (awl203) or tungsten (W) is replaced by the conductive substrate 21 and an electrode 26 of aluminium. It should be noted that the fabrication is arranged so that high temperature processing steps are minimized after the p-type conversion. WHAT WE CLAIM IS:
1. A semiconductor heterostructure comprising a first region of a first semiconductor material and a second region of selfcompensating compound semiconductor material different from said first material and having at least part thereof converted to p-type conductivity.
2. A heterostructure as claimed in claim 1 in which said first region is of n-type conductivity semiconductor material and joins the second region at a p-n junction.
3. A heterostructure as claimed in claim 1 or 2 in which said first region is gallium nitride (GaN).
4. A heterostructure as claimed in claim l, 2 or 3 in which said second region is aluminium nitride (AIN).
5. A heterostructure as claimed in claim 2 comprising a third region additional to said second region. of said p-type conductivity self-compensating compound semiconductor material, said second and third regions each forming a p-n junction with, and being separated by, said first region.
6. A heterostructure as claimed in claim 5 wherein said second and third regions are aluminium nitride (AIN) and said first region is gallium nitride (GaN).
7. A heterostructure as claimed in claim 2 comprising a third region, which third region is of different semiconductor material to said first region, said third region being of n-type conductivity self-compensated semiconductor material, and being contiguous with said first region on the opposite side to said second region.
8. A heterostructure as claimed in claim 7, in which said second and third regions are of aluminium nitride (AIN) and said first region is of galluium nitride (GaN).
9. A heterostructure of claim 7 wherein said second and third regions are of aluminium nitride (AIN and said first region is gallium aluminium nitride (Gal-xALN).
10. A heterostructure äs claimed in claim 7, 8 or 9 formed as an injection laser of the type wherein carriers injected at a p-n junction are confined to a population inversion cavity bounded by outside regions having a different index of refraction to the cavity.
11. A semiconductor heterostructure formed as an injection laser of the type wherein carriers injected at a p-n junction are confined to a population inversion cavity bounded by outside regions that have a change of index refraction relative to the cavity, the cavity being formed of a semiconductor material different from that of said outside regions and wherein at least one region is of self-compensating compound semiconductor material converted to p-type conductivity.
12. A semiconductor heterostructure substantially as described with reference to Figure 1, 2 or 3 of the accompanying drawings.
GB30075/77A 1976-08-10 1977-07-18 Heterostructure semiconductor devices Expired GB1585827A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US71316376A 1976-08-10 1976-08-10

Publications (1)

Publication Number Publication Date
GB1585827A true GB1585827A (en) 1981-03-11

Family

ID=24865023

Family Applications (1)

Application Number Title Priority Date Filing Date
GB30075/77A Expired GB1585827A (en) 1976-08-10 1977-07-18 Heterostructure semiconductor devices

Country Status (4)

Country Link
JP (1) JPS5320882A (en)
CA (1) CA1095154A (en)
DE (1) DE2734203A1 (en)
GB (1) GB1585827A (en)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5542858A (en) * 1978-09-21 1980-03-26 Seiko Epson Corp Ink-jet recorder for colored picture
JPS55145773A (en) * 1979-04-28 1980-11-13 Canon Inc Recording liquid
JPS55145774A (en) * 1979-05-02 1980-11-13 Seiko Epson Corp Ink jet recording ink
US4380018A (en) * 1980-06-20 1983-04-12 Sanyo Denki Kabushiki Kaisha Ink droplet projecting device and an ink jet printer
JPS6040474B2 (en) * 1980-12-01 1985-09-11 キヤノン株式会社 recording liquid
JPS59228776A (en) * 1983-06-10 1984-12-22 Nippon Telegr & Teleph Corp <Ntt> Semiconductor hetero-junction element
JPS6181471A (en) * 1984-09-28 1986-04-25 Fujitsu Ltd Preparation of ink for ink jet printer
JPS63165470A (en) * 1987-11-27 1988-07-08 Seiko Epson Corp Quick-drying ink for ink jet recording
JPH0931378A (en) * 1995-07-17 1997-02-04 Brother Ind Ltd Recording ink
JP2737053B2 (en) * 1996-12-26 1998-04-08 豊田合成株式会社 Gallium nitride based compound semiconductor light emitting device
US6936863B2 (en) 2002-11-18 2005-08-30 Showa Denko K.K. Boron phosphide-based semiconductor light-emitting device, production method thereof and light-emitting diode
US7436045B2 (en) 2004-03-04 2008-10-14 Showa Denko K.K. Gallium nitride-based semiconductor device
JP4901115B2 (en) 2004-03-04 2012-03-21 昭和電工株式会社 Gallium nitride semiconductor device

Also Published As

Publication number Publication date
CA1095154A (en) 1981-02-03
DE2734203A1 (en) 1978-02-16
JPS5320882A (en) 1978-02-25

Similar Documents

Publication Publication Date Title
Maruska et al. Preparation of Mg-doped GaN diodes exhibiting violet electroluminescence
CA2120610C (en) Nitride based semiconductor device and manufacture thereof
US3928092A (en) Simultaneous molecular beam deposition of monocrystalline and polycrystalline III(a)-V(a) compounds to produce semiconductor devices
Amaratunga et al. Amorphous diamond‐Si semiconductor heterojunctions
Muench et al. Epitaxial deposition of silicon carbide from silicon tetrachloride and hexane
RU2127478C1 (en) Blue-and-green laser diode
GB1585827A (en) Heterostructure semiconductor devices
US3703671A (en) Electroluminescent device
Woodcock et al. Electrical and cathodoluminescence measurements on ion implanted donor layers in GaAs
US3949119A (en) Method of gas doping of vacuum evaporated epitaxial silicon films
Nuese et al. The preparation and properties of vapor-grown In 1− x Ga x P
US3015590A (en) Method of forming semiconductive bodies
Dierschke et al. Efficient Electroluminescence from Zinc‐Diffused Ga1− xAlxAs Diodes at 25° C
US3925119A (en) Method for vapor deposition of gallium arsenide phosphide upon gallium arsenide substrates
US3496429A (en) Solid state light sources
US4040080A (en) Semiconductor cold electron emission device
US3998672A (en) Method of producing infrared luminescent diodes
US3770518A (en) Method of making gallium arsenide semiconductive devices
US3725149A (en) Liquid phase diffusion technique
Nuese et al. Vapor-grown In 1− x Ga x P electroluminescent junctions on GaAs
US6103019A (en) Advanced technique to grow single crystal films on amorphous and/or non-single crystal surfaces
RU2151457C1 (en) Method for producing resistive contact layer and semiconductor device of groups ii-vi
US3858238A (en) Semiconductor devices containing as impurities as and p or b and the mehtod of manufacturing the same
Tabatabaie et al. Impact ionization coefficients in (111) InP
JPH0379769A (en) Production of boron nitride

Legal Events

Date Code Title Description
PS Patent sealed
PCNP Patent ceased through non-payment of renewal fee