JP2005285827A - 半導体薄膜の結晶化方法並びに結晶化装置、薄膜トランジスタ、およびこの薄膜トランジスタを使用した表示装置 - Google Patents
半導体薄膜の結晶化方法並びに結晶化装置、薄膜トランジスタ、およびこの薄膜トランジスタを使用した表示装置 Download PDFInfo
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- JP2005285827A JP2005285827A JP2004093198A JP2004093198A JP2005285827A JP 2005285827 A JP2005285827 A JP 2005285827A JP 2004093198 A JP2004093198 A JP 2004093198A JP 2004093198 A JP2004093198 A JP 2004093198A JP 2005285827 A JP2005285827 A JP 2005285827A
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- thin film
- semiconductor thin
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- phase shifter
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- 229910021417 amorphous silicon Inorganic materials 0.000 description 27
- 229910004298 SiO 2 Inorganic materials 0.000 description 24
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Images
Landscapes
- Recrystallisation Techniques (AREA)
- Thin Film Transistor (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2004093198A JP2005285827A (ja) | 2004-03-26 | 2004-03-26 | 半導体薄膜の結晶化方法並びに結晶化装置、薄膜トランジスタ、およびこの薄膜トランジスタを使用した表示装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2004093198A JP2005285827A (ja) | 2004-03-26 | 2004-03-26 | 半導体薄膜の結晶化方法並びに結晶化装置、薄膜トランジスタ、およびこの薄膜トランジスタを使用した表示装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2005285827A true JP2005285827A (ja) | 2005-10-13 |
| JP2005285827A5 JP2005285827A5 (enExample) | 2007-02-01 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2004093198A Abandoned JP2005285827A (ja) | 2004-03-26 | 2004-03-26 | 半導体薄膜の結晶化方法並びに結晶化装置、薄膜トランジスタ、およびこの薄膜トランジスタを使用した表示装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2005285827A (enExample) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2007052393A1 (ja) * | 2005-11-02 | 2007-05-10 | Sharp Kabushiki Kaisha | 半導体装置及びその製造方法 |
| JP2007281444A (ja) * | 2006-03-17 | 2007-10-25 | Advanced Lcd Technologies Development Center Co Ltd | 結晶化方法、薄膜トランジスタの製造方法、薄膜トランジスタ、表示装置、半導体装置 |
| JP2007288173A (ja) * | 2006-03-20 | 2007-11-01 | Semiconductor Energy Lab Co Ltd | 結晶性半導体膜、半導体装置及びそれらの作製方法 |
| JP2008053698A (ja) * | 2006-07-28 | 2008-03-06 | Semiconductor Energy Lab Co Ltd | 半導体装置の作製方法 |
| US8703579B2 (en) | 2006-07-28 | 2014-04-22 | Semiconductor Energy Laborator Co., Ltd. | Method of manufacturing semiconductor device |
-
2004
- 2004-03-26 JP JP2004093198A patent/JP2005285827A/ja not_active Abandoned
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2007052393A1 (ja) * | 2005-11-02 | 2007-05-10 | Sharp Kabushiki Kaisha | 半導体装置及びその製造方法 |
| JPWO2007052393A1 (ja) * | 2005-11-02 | 2009-04-30 | シャープ株式会社 | 半導体装置及びその製造方法 |
| US7968889B2 (en) | 2005-11-02 | 2011-06-28 | Sharp Kabushiki Kaisha | Semiconductor device with thinned gate insulating film and polycrystal semiconductor layer and production method thereof |
| JP2007281444A (ja) * | 2006-03-17 | 2007-10-25 | Advanced Lcd Technologies Development Center Co Ltd | 結晶化方法、薄膜トランジスタの製造方法、薄膜トランジスタ、表示装置、半導体装置 |
| JP2007288173A (ja) * | 2006-03-20 | 2007-11-01 | Semiconductor Energy Lab Co Ltd | 結晶性半導体膜、半導体装置及びそれらの作製方法 |
| JP2008053698A (ja) * | 2006-07-28 | 2008-03-06 | Semiconductor Energy Lab Co Ltd | 半導体装置の作製方法 |
| US8703579B2 (en) | 2006-07-28 | 2014-04-22 | Semiconductor Energy Laborator Co., Ltd. | Method of manufacturing semiconductor device |
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