JP2005285827A5 - - Google Patents
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- Publication number
- JP2005285827A5 JP2005285827A5 JP2004093198A JP2004093198A JP2005285827A5 JP 2005285827 A5 JP2005285827 A5 JP 2005285827A5 JP 2004093198 A JP2004093198 A JP 2004093198A JP 2004093198 A JP2004093198 A JP 2004093198A JP 2005285827 A5 JP2005285827 A5 JP 2005285827A5
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- region
- semiconductor thin
- crystal
- light intensity
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
- 239000010409 thin film Substances 0.000 claims 35
- 239000004065 semiconductor Substances 0.000 claims 29
- 239000013078 crystal Substances 0.000 claims 28
- 238000002425 crystallisation Methods 0.000 claims 15
- 230000008025 crystallization Effects 0.000 claims 10
- 239000000758 substrate Substances 0.000 claims 8
- 239000010408 film Substances 0.000 claims 6
- 230000000737 periodic effect Effects 0.000 claims 5
- 230000001678 irradiating effect Effects 0.000 claims 3
- 238000000034 method Methods 0.000 claims 3
- 230000003287 optical effect Effects 0.000 claims 3
- 238000005245 sintering Methods 0.000 claims 3
- 238000003384 imaging method Methods 0.000 claims 1
- 239000000382 optic material Substances 0.000 claims 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2004093198A JP2005285827A (ja) | 2004-03-26 | 2004-03-26 | 半導体薄膜の結晶化方法並びに結晶化装置、薄膜トランジスタ、およびこの薄膜トランジスタを使用した表示装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2004093198A JP2005285827A (ja) | 2004-03-26 | 2004-03-26 | 半導体薄膜の結晶化方法並びに結晶化装置、薄膜トランジスタ、およびこの薄膜トランジスタを使用した表示装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2005285827A JP2005285827A (ja) | 2005-10-13 |
| JP2005285827A5 true JP2005285827A5 (enExample) | 2007-02-01 |
Family
ID=35183923
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2004093198A Abandoned JP2005285827A (ja) | 2004-03-26 | 2004-03-26 | 半導体薄膜の結晶化方法並びに結晶化装置、薄膜トランジスタ、およびこの薄膜トランジスタを使用した表示装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2005285827A (enExample) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2007052393A1 (ja) * | 2005-11-02 | 2007-05-10 | Sharp Kabushiki Kaisha | 半導体装置及びその製造方法 |
| JP2007281444A (ja) * | 2006-03-17 | 2007-10-25 | Advanced Lcd Technologies Development Center Co Ltd | 結晶化方法、薄膜トランジスタの製造方法、薄膜トランジスタ、表示装置、半導体装置 |
| JP5311754B2 (ja) * | 2006-03-20 | 2013-10-09 | 株式会社半導体エネルギー研究所 | 結晶性半導体膜、半導体装置及びそれらの作製方法 |
| US7994021B2 (en) | 2006-07-28 | 2011-08-09 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing semiconductor device |
| JP5314857B2 (ja) * | 2006-07-28 | 2013-10-16 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
-
2004
- 2004-03-26 JP JP2004093198A patent/JP2005285827A/ja not_active Abandoned
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