JP2005251803A - プラズマ処理装置およびその設計方法 - Google Patents

プラズマ処理装置およびその設計方法 Download PDF

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Publication number
JP2005251803A
JP2005251803A JP2004056618A JP2004056618A JP2005251803A JP 2005251803 A JP2005251803 A JP 2005251803A JP 2004056618 A JP2004056618 A JP 2004056618A JP 2004056618 A JP2004056618 A JP 2004056618A JP 2005251803 A JP2005251803 A JP 2005251803A
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JP
Japan
Prior art keywords
plasma
plasma processing
processing apparatus
perforated plate
active species
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP2004056618A
Other languages
English (en)
Japanese (ja)
Other versions
JP2005251803A5 (https=
Inventor
Shinzo Uchiyama
信三 内山
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP2004056618A priority Critical patent/JP2005251803A/ja
Priority to TW094105927A priority patent/TWI257130B/zh
Priority to US11/064,975 priority patent/US20050194097A1/en
Priority to KR1020050016322A priority patent/KR100712172B1/ko
Priority to CN2005100518242A priority patent/CN100407380C/zh
Publication of JP2005251803A publication Critical patent/JP2005251803A/ja
Publication of JP2005251803A5 publication Critical patent/JP2005251803A5/ja
Withdrawn legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0421—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32357—Generation remote from the workpiece, e.g. down-stream
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32422—Arrangement for selecting ions or species in the plasma
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
    • H10P14/6516—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials
    • H10P14/6518—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by introduction of substances into an already-existing insulating layer
    • H10P14/6524—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by introduction of substances into an already-existing insulating layer the substance being nitrogen
    • H10P14/6526—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by introduction of substances into an already-existing insulating layer the substance being nitrogen introduced into an oxide material, e.g. changing SiO to SiON
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
    • H10P14/6516—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials
    • H10P14/6529—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by exposure to a gas or vapour
    • H10P14/6532—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by exposure to a gas or vapour by exposure to a plasma

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
JP2004056618A 2004-03-01 2004-03-01 プラズマ処理装置およびその設計方法 Withdrawn JP2005251803A (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2004056618A JP2005251803A (ja) 2004-03-01 2004-03-01 プラズマ処理装置およびその設計方法
TW094105927A TWI257130B (en) 2004-03-01 2005-02-25 Plasma processing apparatus and method of designing the same
US11/064,975 US20050194097A1 (en) 2004-03-01 2005-02-25 Plasma processing apparatus and method of designing the same
KR1020050016322A KR100712172B1 (ko) 2004-03-01 2005-02-28 플라스마 처리장치 및 그의 설계방법
CN2005100518242A CN100407380C (zh) 2004-03-01 2005-03-01 等离子体处理设备以及设计等离子体处理设备的方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004056618A JP2005251803A (ja) 2004-03-01 2004-03-01 プラズマ処理装置およびその設計方法

Publications (2)

Publication Number Publication Date
JP2005251803A true JP2005251803A (ja) 2005-09-15
JP2005251803A5 JP2005251803A5 (https=) 2007-04-19

Family

ID=34908925

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2004056618A Withdrawn JP2005251803A (ja) 2004-03-01 2004-03-01 プラズマ処理装置およびその設計方法

Country Status (5)

Country Link
US (1) US20050194097A1 (https=)
JP (1) JP2005251803A (https=)
KR (1) KR100712172B1 (https=)
CN (1) CN100407380C (https=)
TW (1) TWI257130B (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009545101A (ja) * 2006-07-20 2009-12-17 アビザ テクノロジー リミティド プラズマ源

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007088199A (ja) * 2005-09-22 2007-04-05 Canon Inc 処理装置
CN100405537C (zh) * 2005-12-07 2008-07-23 北京北方微电子基地设备工艺研究中心有限责任公司 等离子体反应装置
US8425741B2 (en) * 2006-07-20 2013-04-23 Aviza Technology Limited Ion deposition apparatus having rotatable carousel for supporting a plurality of targets
US8354652B2 (en) 2006-07-20 2013-01-15 Aviza Technology Limited Ion source including separate support systems for accelerator grids
GB0616131D0 (en) * 2006-08-14 2006-09-20 Oxford Instr Plasma Technology Surface processing apparatus
KR101682155B1 (ko) * 2015-04-20 2016-12-02 주식회사 유진테크 기판 처리 장치
JP7097809B2 (ja) * 2018-12-28 2022-07-08 東京エレクトロン株式会社 ガス導入構造、処理装置及び処理方法
CN116538517B (zh) * 2022-01-26 2025-11-11 思脉瑞（北京）科技有限公司 艾烟香烟净化装置
JP2024013757A (ja) * 2022-07-21 2024-02-01 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ状態推定方法

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01149964A (ja) * 1987-12-04 1989-06-13 Furukawa Electric Co Ltd:The プラズマｃｖｄ装置用シャワー電極
JPH07101685B2 (ja) * 1989-01-26 1995-11-01 富士通株式会社 マイクロ波プラズマ処理装置
JP2886752B2 (ja) * 1991-11-05 1999-04-26 キヤノン株式会社 無端環状導波管を有するマイクロ波導入装置及び該装置を備えたプラズマ処理装置
WO2004089046A1 (ja) * 1991-11-05 2004-10-14 Nobumasa Suzuki 無端環状導波管を有するマイクロ波導入装置及び該装置を備えたプラズマ処理装置
JPH06204181A (ja) * 1992-12-29 1994-07-22 Ibiden Co Ltd プラズマエッチング用電極板
JPH0845910A (ja) * 1994-07-29 1996-02-16 Nippon Steel Corp プラズマ処理装置
US5891350A (en) * 1994-12-15 1999-04-06 Applied Materials, Inc. Adjusting DC bias voltage in plasma chambers
US5976261A (en) * 1996-07-11 1999-11-02 Cvc Products, Inc. Multi-zone gas injection apparatus and method for microelectronics manufacturing equipment
JPH11350143A (ja) * 1998-06-02 1999-12-21 Toshiba Corp 成膜装置
JP2000058294A (ja) * 1998-08-07 2000-02-25 Furontekku:Kk プラズマ処理装置
US6331754B1 (en) * 1999-05-13 2001-12-18 Tokyo Electron Limited Inductively-coupled-plasma-processing apparatus
JP2001023955A (ja) * 1999-07-07 2001-01-26 Mitsubishi Electric Corp プラズマ処理装置
JP3889280B2 (ja) 2002-01-07 2007-03-07 忠弘 大見 プラズマ処理装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009545101A (ja) * 2006-07-20 2009-12-17 アビザ テクノロジー リミティド プラズマ源

Also Published As

Publication number Publication date
CN1664996A (zh) 2005-09-07
KR100712172B1 (ko) 2007-04-27
KR20060043213A (ko) 2006-05-15
TW200540988A (en) 2005-12-16
CN100407380C (zh) 2008-07-30
TWI257130B (en) 2006-06-21
US20050194097A1 (en) 2005-09-08

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