CN100407380C - 等离子体处理设备以及设计等离子体处理设备的方法 - Google Patents

等离子体处理设备以及设计等离子体处理设备的方法 Download PDF

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Publication number
CN100407380C
CN100407380C CN2005100518242A CN200510051824A CN100407380C CN 100407380 C CN100407380 C CN 100407380C CN 2005100518242 A CN2005100518242 A CN 2005100518242A CN 200510051824 A CN200510051824 A CN 200510051824A CN 100407380 C CN100407380 C CN 100407380C
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CN
China
Prior art keywords
plasma
plasma processing
distribution
processing apparatus
holes
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Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN2005100518242A
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English (en)
Chinese (zh)
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CN1664996A (zh
Inventor
内山信三
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Canon Inc
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Canon Inc
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Publication date
Application filed by Canon Inc filed Critical Canon Inc
Publication of CN1664996A publication Critical patent/CN1664996A/zh
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Publication of CN100407380C publication Critical patent/CN100407380C/zh
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Expired - Fee Related legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0421—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32357—Generation remote from the workpiece, e.g. down-stream
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32422—Arrangement for selecting ions or species in the plasma
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
    • H10P14/6516—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials
    • H10P14/6518—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by introduction of substances into an already-existing insulating layer
    • H10P14/6524—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by introduction of substances into an already-existing insulating layer the substance being nitrogen
    • H10P14/6526—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by introduction of substances into an already-existing insulating layer the substance being nitrogen introduced into an oxide material, e.g. changing SiO to SiON
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
    • H10P14/6516—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials
    • H10P14/6529—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by exposure to a gas or vapour
    • H10P14/6532—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by exposure to a gas or vapour by exposure to a plasma

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
CN2005100518242A 2004-03-01 2005-03-01 等离子体处理设备以及设计等离子体处理设备的方法 Expired - Fee Related CN100407380C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2004056618 2004-03-01
JP2004056618A JP2005251803A (ja) 2004-03-01 2004-03-01 プラズマ処理装置およびその設計方法

Publications (2)

Publication Number Publication Date
CN1664996A CN1664996A (zh) 2005-09-07
CN100407380C true CN100407380C (zh) 2008-07-30

Family

ID=34908925

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2005100518242A Expired - Fee Related CN100407380C (zh) 2004-03-01 2005-03-01 等离子体处理设备以及设计等离子体处理设备的方法

Country Status (5)

Country Link
US (1) US20050194097A1 (https=)
JP (1) JP2005251803A (https=)
KR (1) KR100712172B1 (https=)
CN (1) CN100407380C (https=)
TW (1) TWI257130B (https=)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007088199A (ja) * 2005-09-22 2007-04-05 Canon Inc 処理装置
CN100405537C (zh) * 2005-12-07 2008-07-23 北京北方微电子基地设备工艺研究中心有限责任公司 等离子体反应装置
US8425741B2 (en) * 2006-07-20 2013-04-23 Aviza Technology Limited Ion deposition apparatus having rotatable carousel for supporting a plurality of targets
WO2008009892A1 (en) * 2006-07-20 2008-01-24 Aviza Technology Limited Plasma sources
US8354652B2 (en) 2006-07-20 2013-01-15 Aviza Technology Limited Ion source including separate support systems for accelerator grids
GB0616131D0 (en) * 2006-08-14 2006-09-20 Oxford Instr Plasma Technology Surface processing apparatus
KR101682155B1 (ko) * 2015-04-20 2016-12-02 주식회사 유진테크 기판 처리 장치
JP7097809B2 (ja) * 2018-12-28 2022-07-08 東京エレクトロン株式会社 ガス導入構造、処理装置及び処理方法
CN116538517B (zh) * 2022-01-26 2025-11-11 思脉瑞（北京）科技有限公司 艾烟香烟净化装置
JP2024013757A (ja) * 2022-07-21 2024-02-01 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ状態推定方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5024748A (en) * 1989-01-26 1991-06-18 Fujitsu Limited Microwave plasma processing apparatus
JPH05345982A (ja) * 1991-11-05 1993-12-27 Canon Inc 無端環状導波管を有するマイクロ波導入装置及び 該装置を備えたプラズマ処理装置
JPH11350143A (ja) * 1998-06-02 1999-12-21 Toshiba Corp 成膜装置
JP2000058294A (ja) * 1998-08-07 2000-02-25 Furontekku:Kk プラズマ処理装置
US20020088542A1 (en) * 1999-07-07 2002-07-11 Kazuyasu Nishikawa Plasma processing apparatus

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01149964A (ja) * 1987-12-04 1989-06-13 Furukawa Electric Co Ltd:The プラズマｃｖｄ装置用シャワー電極
WO2004089046A1 (ja) * 1991-11-05 2004-10-14 Nobumasa Suzuki 無端環状導波管を有するマイクロ波導入装置及び該装置を備えたプラズマ処理装置
JPH06204181A (ja) * 1992-12-29 1994-07-22 Ibiden Co Ltd プラズマエッチング用電極板
JPH0845910A (ja) * 1994-07-29 1996-02-16 Nippon Steel Corp プラズマ処理装置
US5891350A (en) * 1994-12-15 1999-04-06 Applied Materials, Inc. Adjusting DC bias voltage in plasma chambers
US5976261A (en) * 1996-07-11 1999-11-02 Cvc Products, Inc. Multi-zone gas injection apparatus and method for microelectronics manufacturing equipment
US6331754B1 (en) * 1999-05-13 2001-12-18 Tokyo Electron Limited Inductively-coupled-plasma-processing apparatus
JP3889280B2 (ja) 2002-01-07 2007-03-07 忠弘 大見 プラズマ処理装置

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5024748A (en) * 1989-01-26 1991-06-18 Fujitsu Limited Microwave plasma processing apparatus
JPH05345982A (ja) * 1991-11-05 1993-12-27 Canon Inc 無端環状導波管を有するマイクロ波導入装置及び 該装置を備えたプラズマ処理装置
JPH11350143A (ja) * 1998-06-02 1999-12-21 Toshiba Corp 成膜装置
JP2000058294A (ja) * 1998-08-07 2000-02-25 Furontekku:Kk プラズマ処理装置
US20020088542A1 (en) * 1999-07-07 2002-07-11 Kazuyasu Nishikawa Plasma processing apparatus

Also Published As

Publication number Publication date
CN1664996A (zh) 2005-09-07
KR100712172B1 (ko) 2007-04-27
JP2005251803A (ja) 2005-09-15
KR20060043213A (ko) 2006-05-15
TW200540988A (en) 2005-12-16
TWI257130B (en) 2006-06-21
US20050194097A1 (en) 2005-09-08

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