JP2005210103A - レーザ照射装置、レーザ照射方法及び結晶質半導体膜の作製方法 - Google Patents

レーザ照射装置、レーザ照射方法及び結晶質半導体膜の作製方法 Download PDF

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JP2005210103A
JP2005210103A JP2004372842A JP2004372842A JP2005210103A JP 2005210103 A JP2005210103 A JP 2005210103A JP 2004372842 A JP2004372842 A JP 2004372842A JP 2004372842 A JP2004372842 A JP 2004372842A JP 2005210103 A JP2005210103 A JP 2005210103A
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laser beam
semiconductor film
laser
irradiated
substrate
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JP2005210103A5 (https=
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Koichiro Tanaka
幸一郎 田中
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Publication of JP2005210103A5 publication Critical patent/JP2005210103A5/ja
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    • Y02B20/346—

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  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Thin Film Transistor (AREA)
  • Recrystallisation Techniques (AREA)
  • Electroluminescent Light Sources (AREA)
JP2004372842A 2003-12-26 2004-12-24 レーザ照射装置、レーザ照射方法及び結晶質半導体膜の作製方法 Withdrawn JP2005210103A (ja)

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JP2004372842A JP2005210103A (ja) 2003-12-26 2004-12-24 レーザ照射装置、レーザ照射方法及び結晶質半導体膜の作製方法

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JP2003433357 2003-12-26
JP2004372842A JP2005210103A (ja) 2003-12-26 2004-12-24 レーザ照射装置、レーザ照射方法及び結晶質半導体膜の作製方法

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JP2011202020A Division JP5315392B2 (ja) 2003-12-26 2011-09-15 半導体装置の作製方法

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JP2005210103A true JP2005210103A (ja) 2005-08-04
JP2005210103A5 JP2005210103A5 (https=) 2008-02-14

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Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007251149A (ja) * 2006-02-17 2007-09-27 Semiconductor Energy Lab Co Ltd 半導体装置の作製方法
JP2008177283A (ja) * 2007-01-17 2008-07-31 Sharp Corp 有機薄膜の形成方法および有機薄膜形成装置
WO2008137453A1 (en) * 2007-05-03 2008-11-13 Electro Scientific Industries, Inc. Laser micro-machining system with post-scan lens deflection
JP2009280909A (ja) * 2008-04-25 2009-12-03 Semiconductor Energy Lab Co Ltd 成膜方法および発光装置の作製方法
US8524127B2 (en) 2010-03-26 2013-09-03 Electro Scientific Industries, Inc. Method of manufacturing a panel with occluded microholes
US8580700B2 (en) 2006-02-17 2013-11-12 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US10763322B2 (en) 2013-12-02 2020-09-01 Semiconductor Energy Laboratory Co., Ltd. Display device and method for manufacturing the same
CN114068626A (zh) * 2020-08-03 2022-02-18 三星显示有限公司 显示装置的制造装置及制造方法
JP2022087208A (ja) * 2008-10-16 2022-06-09 株式会社半導体エネルギー研究所 表示装置および電子機器

Citations (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01148485A (ja) * 1987-12-02 1989-06-09 Tokyo Electron Ltd 半導体製造装置
JPH01246827A (ja) * 1988-03-28 1989-10-02 Tokyo Electron Ltd ビームアニール装置
JPH07240415A (ja) * 1994-03-02 1995-09-12 Hitachi Ltd 配線修正方法及び装置
JPH10214785A (ja) * 1997-01-30 1998-08-11 Jiyuu Denshi Laser Kenkyusho:Kk 半導体薄膜及びその製膜方法
JP2001077450A (ja) * 1999-09-07 2001-03-23 Japan Science & Technology Corp 固体レーザー装置
JP2001338894A (ja) * 2000-05-26 2001-12-07 Matsushita Electric Ind Co Ltd 固体試料のアニール方法および半導体不純物ドーピング層形成方法
JP2002158185A (ja) * 2000-11-21 2002-05-31 Toshiba Corp レーザアニール方法、その装置、薄膜トランジスタの製造方法およびその装置
JP2003091245A (ja) * 2001-09-18 2003-03-28 Semiconductor Energy Lab Co Ltd 表示装置
JP2003224084A (ja) * 2001-11-22 2003-08-08 Semiconductor Energy Lab Co Ltd 半導体製造装置
JP2003229432A (ja) * 2001-11-30 2003-08-15 Semiconductor Energy Lab Co Ltd 半導体装置の作製方法
WO2003084708A1 (en) * 2002-04-01 2003-10-16 Spectra-Physics, Inc. Method and apparatus for laser micro-machining of polymeric articles using a mode-locked laser
JP2004349635A (ja) * 2003-05-26 2004-12-09 Fuji Photo Film Co Ltd レーザアニール方法及び装置
JP2006526072A (ja) * 2003-04-07 2006-11-16 富士写真フイルム株式会社 結晶性Ｓｉ層形成基板の製造方法、結晶性Ｓｉ層形成基板及び結晶性Ｓｉデバイス

Patent Citations (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01148485A (ja) * 1987-12-02 1989-06-09 Tokyo Electron Ltd 半導体製造装置
JPH01246827A (ja) * 1988-03-28 1989-10-02 Tokyo Electron Ltd ビームアニール装置
JPH07240415A (ja) * 1994-03-02 1995-09-12 Hitachi Ltd 配線修正方法及び装置
JPH10214785A (ja) * 1997-01-30 1998-08-11 Jiyuu Denshi Laser Kenkyusho:Kk 半導体薄膜及びその製膜方法
JP2001077450A (ja) * 1999-09-07 2001-03-23 Japan Science & Technology Corp 固体レーザー装置
JP2001338894A (ja) * 2000-05-26 2001-12-07 Matsushita Electric Ind Co Ltd 固体試料のアニール方法および半導体不純物ドーピング層形成方法
JP2002158185A (ja) * 2000-11-21 2002-05-31 Toshiba Corp レーザアニール方法、その装置、薄膜トランジスタの製造方法およびその装置
JP2003091245A (ja) * 2001-09-18 2003-03-28 Semiconductor Energy Lab Co Ltd 表示装置
JP2003224084A (ja) * 2001-11-22 2003-08-08 Semiconductor Energy Lab Co Ltd 半導体製造装置
JP2003229432A (ja) * 2001-11-30 2003-08-15 Semiconductor Energy Lab Co Ltd 半導体装置の作製方法
WO2003084708A1 (en) * 2002-04-01 2003-10-16 Spectra-Physics, Inc. Method and apparatus for laser micro-machining of polymeric articles using a mode-locked laser
JP2006526072A (ja) * 2003-04-07 2006-11-16 富士写真フイルム株式会社 結晶性Ｓｉ層形成基板の製造方法、結晶性Ｓｉ層形成基板及び結晶性Ｓｉデバイス
JP2004349635A (ja) * 2003-05-26 2004-12-09 Fuji Photo Film Co Ltd レーザアニール方法及び装置

Cited By (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8580700B2 (en) 2006-02-17 2013-11-12 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
JP2007251149A (ja) * 2006-02-17 2007-09-27 Semiconductor Energy Lab Co Ltd 半導体装置の作製方法
JP2008177283A (ja) * 2007-01-17 2008-07-31 Sharp Corp 有機薄膜の形成方法および有機薄膜形成装置
WO2008137453A1 (en) * 2007-05-03 2008-11-13 Electro Scientific Industries, Inc. Laser micro-machining system with post-scan lens deflection
US8288684B2 (en) 2007-05-03 2012-10-16 Electro Scientific Industries, Inc. Laser micro-machining system with post-scan lens deflection
JP2009280909A (ja) * 2008-04-25 2009-12-03 Semiconductor Energy Lab Co Ltd 成膜方法および発光装置の作製方法
JP2022087208A (ja) * 2008-10-16 2022-06-09 株式会社半導体エネルギー研究所 表示装置および電子機器
JP2024038443A (ja) * 2008-10-16 2024-03-19 株式会社半導体エネルギー研究所 表示装置
US11930668B2 (en) 2008-10-16 2024-03-12 Semiconductor Energy Laboratory Co., Ltd. Flexible light-emitting device and EL module including transparent conductive film
US8524127B2 (en) 2010-03-26 2013-09-03 Electro Scientific Industries, Inc. Method of manufacturing a panel with occluded microholes
JP2020166274A (ja) * 2013-12-02 2020-10-08 株式会社半導体エネルギー研究所 線状ビーム照射装置
US10879331B2 (en) 2013-12-02 2020-12-29 Semiconductor Energy Laboratory Co., Ltd. Display device and method for manufacturing the same
US11004925B2 (en) 2013-12-02 2021-05-11 Semiconductor Energy Laboratory Co., Ltd. Display device and method for manufacturing the same
US10872947B2 (en) 2013-12-02 2020-12-22 Semiconductor Energy Laboratory Co., Ltd. Display device and method for manufacturing the same
US11672148B2 (en) 2013-12-02 2023-06-06 Semiconductor Energy Laboratory Co., Ltd. Display device and method for manufacturing the same
US10854697B2 (en) 2013-12-02 2020-12-01 Semiconductor Energy Laboratory Co., Ltd. Display device and method for manufacturing the same
US10763322B2 (en) 2013-12-02 2020-09-01 Semiconductor Energy Laboratory Co., Ltd. Display device and method for manufacturing the same
US12048207B2 (en) 2013-12-02 2024-07-23 Semiconductor Energy Laboratory Co., Ltd. Display device and method for manufacturing the same
CN114068626A (zh) * 2020-08-03 2022-02-18 三星显示有限公司 显示装置的制造装置及制造方法

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