JP2005210103A - レーザ照射装置、レーザ照射方法及び結晶質半導体膜の作製方法 - Google Patents
レーザ照射装置、レーザ照射方法及び結晶質半導体膜の作製方法 Download PDFInfo
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- JP2005210103A JP2005210103A JP2004372842A JP2004372842A JP2005210103A JP 2005210103 A JP2005210103 A JP 2005210103A JP 2004372842 A JP2004372842 A JP 2004372842A JP 2004372842 A JP2004372842 A JP 2004372842A JP 2005210103 A JP2005210103 A JP 2005210103A
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- 238000000034 method Methods 0.000 title claims abstract description 103
- 239000004065 semiconductor Substances 0.000 title claims description 295
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- 238000003384 imaging method Methods 0.000 claims description 3
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- 239000010410 layer Substances 0.000 description 71
- 239000012535 impurity Substances 0.000 description 47
- 238000005530 etching Methods 0.000 description 31
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 29
- 229910052710 silicon Inorganic materials 0.000 description 29
- 239000010703 silicon Substances 0.000 description 29
- 239000011521 glass Substances 0.000 description 26
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- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 24
- 229910021417 amorphous silicon Inorganic materials 0.000 description 21
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- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 2
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- 229910013641 LiNbO 3 Inorganic materials 0.000 description 1
- HBBGRARXTFLTSG-UHFFFAOYSA-N Lithium ion Chemical compound [Li+] HBBGRARXTFLTSG-UHFFFAOYSA-N 0.000 description 1
- 229910052779 Neodymium Inorganic materials 0.000 description 1
- 239000004695 Polyether sulfone Substances 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 1
- 229910001413 alkali metal ion Inorganic materials 0.000 description 1
- UQZIWOQVLUASCR-UHFFFAOYSA-N alumane;titanium Chemical compound [AlH3].[Ti] UQZIWOQVLUASCR-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
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- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
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- 238000005468 ion implantation Methods 0.000 description 1
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- 238000010030 laminating Methods 0.000 description 1
- 239000011133 lead Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 229910052744 lithium Inorganic materials 0.000 description 1
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
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- 239000004417 polycarbonate Substances 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920006393 polyether sulfone Polymers 0.000 description 1
- 239000005020 polyethylene terephthalate Substances 0.000 description 1
- 229920000139 polyethylene terephthalate Polymers 0.000 description 1
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- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
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- 238000003860 storage Methods 0.000 description 1
- 229910052712 strontium Inorganic materials 0.000 description 1
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- 239000011135 tin Substances 0.000 description 1
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- 150000003624 transition metals Chemical class 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- Y02B20/346—
Landscapes
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Thin Film Transistor (AREA)
- Recrystallisation Techniques (AREA)
- Electroluminescent Light Sources (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2004372842A JP2005210103A (ja) | 2003-12-26 | 2004-12-24 | レーザ照射装置、レーザ照射方法及び結晶質半導体膜の作製方法 |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2003433357 | 2003-12-26 | ||
| JP2004372842A JP2005210103A (ja) | 2003-12-26 | 2004-12-24 | レーザ照射装置、レーザ照射方法及び結晶質半導体膜の作製方法 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2011202020A Division JP5315392B2 (ja) | 2003-12-26 | 2011-09-15 | 半導体装置の作製方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2005210103A true JP2005210103A (ja) | 2005-08-04 |
| JP2005210103A5 JP2005210103A5 (enExample) | 2008-02-14 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2004372842A Withdrawn JP2005210103A (ja) | 2003-12-26 | 2004-12-24 | レーザ照射装置、レーザ照射方法及び結晶質半導体膜の作製方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2005210103A (enExample) |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007251149A (ja) * | 2006-02-17 | 2007-09-27 | Semiconductor Energy Lab Co Ltd | 半導体装置の作製方法 |
| JP2008177283A (ja) * | 2007-01-17 | 2008-07-31 | Sharp Corp | 有機薄膜の形成方法および有機薄膜形成装置 |
| WO2008137453A1 (en) * | 2007-05-03 | 2008-11-13 | Electro Scientific Industries, Inc. | Laser micro-machining system with post-scan lens deflection |
| JP2009280909A (ja) * | 2008-04-25 | 2009-12-03 | Semiconductor Energy Lab Co Ltd | 成膜方法および発光装置の作製方法 |
| US8524127B2 (en) | 2010-03-26 | 2013-09-03 | Electro Scientific Industries, Inc. | Method of manufacturing a panel with occluded microholes |
| US8580700B2 (en) | 2006-02-17 | 2013-11-12 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
| US10763322B2 (en) | 2013-12-02 | 2020-09-01 | Semiconductor Energy Laboratory Co., Ltd. | Display device and method for manufacturing the same |
| CN114068626A (zh) * | 2020-08-03 | 2022-02-18 | 三星显示有限公司 | 显示装置的制造装置及制造方法 |
| JP2022087208A (ja) * | 2008-10-16 | 2022-06-09 | 株式会社半導体エネルギー研究所 | 表示装置および電子機器 |
Citations (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01148485A (ja) * | 1987-12-02 | 1989-06-09 | Tokyo Electron Ltd | 半導体製造装置 |
| JPH01246827A (ja) * | 1988-03-28 | 1989-10-02 | Tokyo Electron Ltd | ビームアニール装置 |
| JPH07240415A (ja) * | 1994-03-02 | 1995-09-12 | Hitachi Ltd | 配線修正方法及び装置 |
| JPH10214785A (ja) * | 1997-01-30 | 1998-08-11 | Jiyuu Denshi Laser Kenkyusho:Kk | 半導体薄膜及びその製膜方法 |
| JP2001077450A (ja) * | 1999-09-07 | 2001-03-23 | Japan Science & Technology Corp | 固体レーザー装置 |
| JP2001338894A (ja) * | 2000-05-26 | 2001-12-07 | Matsushita Electric Ind Co Ltd | 固体試料のアニール方法および半導体不純物ドーピング層形成方法 |
| JP2002158185A (ja) * | 2000-11-21 | 2002-05-31 | Toshiba Corp | レーザアニール方法、その装置、薄膜トランジスタの製造方法およびその装置 |
| JP2003091245A (ja) * | 2001-09-18 | 2003-03-28 | Semiconductor Energy Lab Co Ltd | 表示装置 |
| JP2003224084A (ja) * | 2001-11-22 | 2003-08-08 | Semiconductor Energy Lab Co Ltd | 半導体製造装置 |
| JP2003229432A (ja) * | 2001-11-30 | 2003-08-15 | Semiconductor Energy Lab Co Ltd | 半導体装置の作製方法 |
| WO2003084708A1 (en) * | 2002-04-01 | 2003-10-16 | Spectra-Physics, Inc. | Method and apparatus for laser micro-machining of polymeric articles using a mode-locked laser |
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| US8580700B2 (en) | 2006-02-17 | 2013-11-12 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
| JP2007251149A (ja) * | 2006-02-17 | 2007-09-27 | Semiconductor Energy Lab Co Ltd | 半導体装置の作製方法 |
| JP2008177283A (ja) * | 2007-01-17 | 2008-07-31 | Sharp Corp | 有機薄膜の形成方法および有機薄膜形成装置 |
| WO2008137453A1 (en) * | 2007-05-03 | 2008-11-13 | Electro Scientific Industries, Inc. | Laser micro-machining system with post-scan lens deflection |
| US8288684B2 (en) | 2007-05-03 | 2012-10-16 | Electro Scientific Industries, Inc. | Laser micro-machining system with post-scan lens deflection |
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| JP2024038443A (ja) * | 2008-10-16 | 2024-03-19 | 株式会社半導体エネルギー研究所 | 表示装置 |
| US11930668B2 (en) | 2008-10-16 | 2024-03-12 | Semiconductor Energy Laboratory Co., Ltd. | Flexible light-emitting device and EL module including transparent conductive film |
| US8524127B2 (en) | 2010-03-26 | 2013-09-03 | Electro Scientific Industries, Inc. | Method of manufacturing a panel with occluded microholes |
| JP2020166274A (ja) * | 2013-12-02 | 2020-10-08 | 株式会社半導体エネルギー研究所 | 線状ビーム照射装置 |
| US10879331B2 (en) | 2013-12-02 | 2020-12-29 | Semiconductor Energy Laboratory Co., Ltd. | Display device and method for manufacturing the same |
| US11004925B2 (en) | 2013-12-02 | 2021-05-11 | Semiconductor Energy Laboratory Co., Ltd. | Display device and method for manufacturing the same |
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| US11672148B2 (en) | 2013-12-02 | 2023-06-06 | Semiconductor Energy Laboratory Co., Ltd. | Display device and method for manufacturing the same |
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| CN114068626A (zh) * | 2020-08-03 | 2022-02-18 | 三星显示有限公司 | 显示装置的制造装置及制造方法 |
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