JP2005197600A5 - - Google Patents

Download PDF

Info

Publication number
JP2005197600A5
JP2005197600A5 JP2004004483A JP2004004483A JP2005197600A5 JP 2005197600 A5 JP2005197600 A5 JP 2005197600A5 JP 2004004483 A JP2004004483 A JP 2004004483A JP 2004004483 A JP2004004483 A JP 2004004483A JP 2005197600 A5 JP2005197600 A5 JP 2005197600A5
Authority
JP
Japan
Prior art keywords
mist
manufacturing apparatus
processing
semiconductor manufacturing
carrier gas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2004004483A
Other languages
English (en)
Japanese (ja)
Other versions
JP4361811B2 (ja
JP2005197600A (ja
Filing date
Publication date
Application filed filed Critical
Priority claimed from JP2004004483A external-priority patent/JP4361811B2/ja
Priority to JP2004004483A priority Critical patent/JP4361811B2/ja
Priority to CNB2004800400808A priority patent/CN100440451C/zh
Priority to US10/585,408 priority patent/US20070163502A1/en
Priority to KR1020067015082A priority patent/KR100876692B1/ko
Priority to PCT/JP2004/019418 priority patent/WO2005067023A1/ja
Publication of JP2005197600A publication Critical patent/JP2005197600A/ja
Publication of JP2005197600A5 publication Critical patent/JP2005197600A5/ja
Publication of JP4361811B2 publication Critical patent/JP4361811B2/ja
Application granted granted Critical
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

JP2004004483A 2004-01-09 2004-01-09 半導体製造装置 Expired - Fee Related JP4361811B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2004004483A JP4361811B2 (ja) 2004-01-09 2004-01-09 半導体製造装置
PCT/JP2004/019418 WO2005067023A1 (ja) 2004-01-09 2004-12-24 基板処理装置
US10/585,408 US20070163502A1 (en) 2004-01-09 2004-12-24 Substrate processing apparatus
KR1020067015082A KR100876692B1 (ko) 2004-01-09 2004-12-24 기판처리장치
CNB2004800400808A CN100440451C (zh) 2004-01-09 2004-12-24 基板处理装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004004483A JP4361811B2 (ja) 2004-01-09 2004-01-09 半導体製造装置

Publications (3)

Publication Number Publication Date
JP2005197600A JP2005197600A (ja) 2005-07-21
JP2005197600A5 true JP2005197600A5 (cg-RX-API-DMAC10.html) 2007-02-15
JP4361811B2 JP4361811B2 (ja) 2009-11-11

Family

ID=34747122

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2004004483A Expired - Fee Related JP4361811B2 (ja) 2004-01-09 2004-01-09 半導体製造装置

Country Status (5)

Country Link
US (1) US20070163502A1 (cg-RX-API-DMAC10.html)
JP (1) JP4361811B2 (cg-RX-API-DMAC10.html)
KR (1) KR100876692B1 (cg-RX-API-DMAC10.html)
CN (1) CN100440451C (cg-RX-API-DMAC10.html)
WO (1) WO2005067023A1 (cg-RX-API-DMAC10.html)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4597847B2 (ja) * 2005-11-28 2010-12-15 株式会社フジクラ 成膜装置
CN101466866B (zh) 2006-05-09 2012-10-03 株式会社爱发科 薄膜制造装置及薄膜制造装置用内部块
US20080006044A1 (en) * 2006-07-10 2008-01-10 Ziming Tan Method for controlling temperature
JPWO2008120445A1 (ja) * 2007-03-29 2010-07-15 新明和工業株式会社 センサの取付構造及び真空成膜装置
CN102077320B (zh) * 2008-07-04 2013-01-23 东京毅力科创株式会社 等离子体处理装置、等离子体处理方法和介电体窗的温度调节机构
WO2010114118A1 (ja) * 2009-04-03 2010-10-07 東京エレクトロン株式会社 蒸着ヘッドおよび成膜装置
JP2012169552A (ja) * 2011-02-16 2012-09-06 Tokyo Electron Ltd 冷却機構、処理室、処理室内部品及び冷却方法
JP5947023B2 (ja) * 2011-11-14 2016-07-06 東京エレクトロン株式会社 温度制御装置、プラズマ処理装置、処理装置及び温度制御方法
EP2788704B1 (en) * 2011-12-09 2019-03-06 Applied Materials, Inc. Heat exchanger for cooling a heating tube and method thereof
WO2013141371A1 (ja) * 2012-03-22 2013-09-26 株式会社日立国際電気 基板処理装置、半導体装置の製造方法および基板処理方法
JP2013243218A (ja) * 2012-05-18 2013-12-05 Tokyo Electron Ltd プラズマ処理装置、及びプラズマ処理方法
JP6014661B2 (ja) * 2012-05-25 2016-10-25 東京エレクトロン株式会社 プラズマ処理装置、及びプラズマ処理方法
JP6579974B2 (ja) * 2015-02-25 2019-09-25 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ 基板処理装置、温度センサ及び半導体装置の製造方法
US10150184B2 (en) * 2015-10-21 2018-12-11 Siemens Energy, Inc. Method of forming a cladding layer having an integral channel
US11017984B2 (en) 2016-04-28 2021-05-25 Applied Materials, Inc. Ceramic coated quartz lid for processing chamber
JP6875336B2 (ja) * 2018-08-27 2021-05-26 信越化学工業株式会社 成膜方法
JP7306195B2 (ja) * 2019-09-27 2023-07-11 東京エレクトロン株式会社 基板を処理する装置及びステージをクリーニングする方法
JP7514478B2 (ja) * 2020-12-04 2024-07-11 株式会社デンソー ウエハ処理装置及びウエハ処理方法
GB2609624A (en) * 2021-08-06 2023-02-15 Leybold Gmbh Cooling device, method for cooling a cooling element and layer deposition apparatus
CN113659022B (zh) * 2021-08-16 2023-07-21 广东贝尔试验设备有限公司 一种光伏电池划刻加工用电池芯片温度检测装置
JP7876076B2 (ja) * 2023-09-29 2026-06-18 東京エレクトロン株式会社 基板処理装置及び冷却方法

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2631165B1 (fr) * 1988-05-05 1992-02-21 Moulene Daniel Support conditionneur de temperature pour petits objets tels que des composants semi-conducteurs et procede de regulation thermique utilisant ce support
JPH0255292A (ja) * 1988-08-19 1990-02-23 Fujitsu Ltd 反応管の冷却方法
US5316579A (en) * 1988-12-27 1994-05-31 Symetrix Corporation Apparatus for forming a thin film with a mist forming means
CA2126731A1 (en) * 1993-07-12 1995-01-13 Frank Jansen Hollow cathode array and method of cleaning sheet stock therewith
EP0827186A3 (en) * 1996-08-29 1999-12-15 Tokyo Electron Limited Substrate treatment system
JP4053173B2 (ja) * 1999-03-29 2008-02-27 東京エレクトロン株式会社 マイクロ波プラズマ処理装置及び方法
EP1230663A1 (en) * 1999-11-15 2002-08-14 LAM Research Corporation Temperature control system for plasma processing apparatus
JP2001156047A (ja) * 1999-11-30 2001-06-08 Mitsubishi Electric Corp 半導体製造装置
JP2003059884A (ja) * 2001-08-20 2003-02-28 Tokyo Electron Ltd 基板処理装置及び基板処理方法
JP2003174016A (ja) * 2001-12-07 2003-06-20 Tokyo Electron Ltd 真空処理装置
US6916502B2 (en) * 2002-02-11 2005-07-12 Battelle Energy Alliance, Llc Systems and methods for coating conduit interior surfaces utilizing a thermal spray gun with extension arm
JP4022459B2 (ja) * 2002-09-30 2007-12-19 助川電気工業株式会社 冷却器付加熱装置

Similar Documents

Publication Publication Date Title
TWI451900B (zh) Gas handling device
TW200716927A (en) Water removal apparatus and inspection apparatus including the same
JP2016084517A (ja) 原料ガス供給装置及び成膜装置
CN102031502A (zh) 基板载置台的温度控制方法及温度控制系统
US9761415B2 (en) Semiconductor manufacturing apparatus and semiconductor manufacturing method
JP4361811B2 (ja) 半導体製造装置
TW202045284A (zh) 加熱裝置及焊料接合完畢對象物的製造方法
EP3322017B1 (en) Fuel cell system and operating method therefor
KR102110636B1 (ko) 대기압 플라스마 발생 장치, 쌍피처리체 작업기
CN110582836B (zh) 用于在半导体应用中使用超临界流体的方法和设备
TWI494162B (zh) 利用增加氣體密度的溫度調整方法
US9922870B2 (en) Method for applying an image of an electrically conductive material onto a recording medium and device for ejecting droplets of an electrically conductive fluid
JP6054695B2 (ja) 成膜装置
KR20160049228A (ko) 기판 액처리용 제어장치와 이를 이용한 기판 액처리 장치 및 기판 액처리 방법
WO2006062010A3 (en) Fuel cell system
JP2024031857A5 (cg-RX-API-DMAC10.html)
JP2008279502A (ja) リフロー装置
JP2006224066A (ja) プラズマ除害機の制御方法および該方法を用いた装置
JP2022016559A (ja) 大気圧プラズマ発生装置
JP2016176095A (ja) 排ガス処理方法
KR101453860B1 (ko) 플라즈마 히터
KR20080041893A (ko) 히팅 및 쿨링이 가능한 척
JP2008032235A (ja) 過熱蒸気発生装置および過熱蒸気処理装置
US8728240B2 (en) Apparatus for vapor condensation and recovery
JP2009236471A (ja) 熱処理装置