JP2005191546A5 - - Google Patents

Download PDF

Info

Publication number
JP2005191546A5
JP2005191546A5 JP2004336952A JP2004336952A JP2005191546A5 JP 2005191546 A5 JP2005191546 A5 JP 2005191546A5 JP 2004336952 A JP2004336952 A JP 2004336952A JP 2004336952 A JP2004336952 A JP 2004336952A JP 2005191546 A5 JP2005191546 A5 JP 2005191546A5
Authority
JP
Japan
Prior art keywords
laser light
laser
wavelength
semiconductor film
converted
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2004336952A
Other languages
English (en)
Japanese (ja)
Other versions
JP2005191546A (ja
JP5159021B2 (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2004336952A priority Critical patent/JP5159021B2/ja
Priority claimed from JP2004336952A external-priority patent/JP5159021B2/ja
Publication of JP2005191546A publication Critical patent/JP2005191546A/ja
Publication of JP2005191546A5 publication Critical patent/JP2005191546A5/ja
Application granted granted Critical
Publication of JP5159021B2 publication Critical patent/JP5159021B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

JP2004336952A 2003-12-02 2004-11-22 半導体装置の作製方法 Expired - Fee Related JP5159021B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2004336952A JP5159021B2 (ja) 2003-12-02 2004-11-22 半導体装置の作製方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2003403155 2003-12-02
JP2003403155 2003-12-02
JP2004336952A JP5159021B2 (ja) 2003-12-02 2004-11-22 半導体装置の作製方法

Publications (3)

Publication Number Publication Date
JP2005191546A JP2005191546A (ja) 2005-07-14
JP2005191546A5 true JP2005191546A5 (enrdf_load_stackoverflow) 2008-01-10
JP5159021B2 JP5159021B2 (ja) 2013-03-06

Family

ID=34797506

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2004336952A Expired - Fee Related JP5159021B2 (ja) 2003-12-02 2004-11-22 半導体装置の作製方法

Country Status (1)

Country Link
JP (1) JP5159021B2 (enrdf_load_stackoverflow)

Families Citing this family (49)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1547719A3 (en) * 2003-12-26 2009-01-28 Semiconductor Energy Laboratory Co., Ltd. Laser irradiation apparatus, laser irradiation method, and method for manufacturing crystalline semiconductor film
WO2007046290A1 (en) 2005-10-18 2007-04-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US8278739B2 (en) 2006-03-20 2012-10-02 Semiconductor Energy Laboratory Co., Ltd. Crystalline semiconductor film, semiconductor device, and method for manufacturing thereof
US7935584B2 (en) 2006-08-31 2011-05-03 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing crystalline semiconductor device
US7662703B2 (en) 2006-08-31 2010-02-16 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing crystalline semiconductor film and semiconductor device
US8173977B2 (en) 2006-10-03 2012-05-08 Semiconductor Energy Laboratory Co., Ltd. Laser irradiation apparatus and laser irradiation method
JP5007192B2 (ja) * 2006-10-06 2012-08-22 株式会社半導体エネルギー研究所 半導体装置の作製方法
US8338278B2 (en) 2006-12-04 2012-12-25 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing semiconductor device with crystallized semiconductor film
US7972943B2 (en) 2007-03-02 2011-07-05 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device
KR101499175B1 (ko) * 2007-10-04 2015-03-05 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 기판의 제조방법
US7812348B2 (en) 2008-02-29 2010-10-12 Semiconductor Energy Laboratory Co., Ltd. Thin-film transistor and display device
US7786485B2 (en) * 2008-02-29 2010-08-31 Semicondutor Energy Laboratory Co., Ltd. Thin-film transistor and display device
US7968880B2 (en) 2008-03-01 2011-06-28 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor and display device
US7821012B2 (en) 2008-03-18 2010-10-26 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor
JP5411528B2 (ja) 2008-03-18 2014-02-12 株式会社半導体エネルギー研究所 薄膜トランジスタ及び表示装置
JP5416460B2 (ja) 2008-04-18 2014-02-12 株式会社半導体エネルギー研究所 薄膜トランジスタおよび薄膜トランジスタの作製方法
JP2009280909A (ja) * 2008-04-25 2009-12-03 Semiconductor Energy Lab Co Ltd 成膜方法および発光装置の作製方法
JP5436017B2 (ja) 2008-04-25 2014-03-05 株式会社半導体エネルギー研究所 半導体装置
US8049215B2 (en) 2008-04-25 2011-11-01 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor
US8039842B2 (en) 2008-05-22 2011-10-18 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor and display device including thin film transistor
WO2009157574A1 (en) 2008-06-27 2009-12-30 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor
KR101602252B1 (ko) 2008-06-27 2016-03-10 가부시키가이샤 한도오따이 에네루기 켄큐쇼 박막 트랜지스터, 반도체장치 및 전자기기
JP5498762B2 (ja) 2008-11-17 2014-05-21 株式会社半導体エネルギー研究所 薄膜トランジスタの作製方法
CN103730515B (zh) 2009-03-09 2016-08-17 株式会社半导体能源研究所 半导体器件
JP5888802B2 (ja) 2009-05-28 2016-03-22 株式会社半導体エネルギー研究所 トランジスタを有する装置
KR101836067B1 (ko) 2009-12-21 2018-03-08 가부시키가이샤 한도오따이 에네루기 켄큐쇼 박막 트랜지스터와 그 제작 방법
US8598586B2 (en) 2009-12-21 2013-12-03 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor and manufacturing method thereof
TWI535028B (zh) 2009-12-21 2016-05-21 半導體能源研究所股份有限公司 薄膜電晶體
US8476744B2 (en) 2009-12-28 2013-07-02 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor with channel including microcrystalline and amorphous semiconductor regions
US8383434B2 (en) 2010-02-22 2013-02-26 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor and manufacturing method thereof
US8343858B2 (en) 2010-03-02 2013-01-01 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing microcrystalline semiconductor film and method for manufacturing semiconductor device
JP5752446B2 (ja) 2010-03-15 2015-07-22 株式会社半導体エネルギー研究所 半導体装置
JP5752447B2 (ja) 2010-03-15 2015-07-22 株式会社半導体エネルギー研究所 半導体装置
US8884297B2 (en) 2010-05-14 2014-11-11 Semiconductor Energy Laboratory Co., Ltd. Microcrystalline silicon film, manufacturing method thereof, semiconductor device, and manufacturing method thereof
US8410486B2 (en) 2010-05-14 2013-04-02 Semiconductor Energy Labortory Co., Ltd. Method for manufacturing microcrystalline semiconductor film and method for manufacturing semiconductor device
US8778745B2 (en) 2010-06-29 2014-07-15 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
KR20120003374A (ko) 2010-07-02 2012-01-10 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치의 제작 방법
KR101830193B1 (ko) 2010-07-02 2018-02-20 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치의 제작 방법
US8916425B2 (en) 2010-07-26 2014-12-23 Semiconductor Energy Laboratory Co., Ltd. Method for forming microcrystalline semiconductor film and method for manufacturing semiconductor device
CN102386072B (zh) 2010-08-25 2016-05-04 株式会社半导体能源研究所 微晶半导体膜的制造方法及半导体装置的制造方法
US8704230B2 (en) 2010-08-26 2014-04-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US9230826B2 (en) 2010-08-26 2016-01-05 Semiconductor Energy Laboratory Co., Ltd. Etching method using mixed gas and method for manufacturing semiconductor device
US8338240B2 (en) 2010-10-01 2012-12-25 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing transistor
JP2012089708A (ja) 2010-10-20 2012-05-10 Semiconductor Energy Lab Co Ltd 微結晶シリコン膜の作製方法、半導体装置の作製方法
US8450158B2 (en) 2010-11-04 2013-05-28 Semiconductor Energy Laboratory Co., Ltd. Method for forming microcrystalline semiconductor film and method for manufacturing semiconductor device
US8394685B2 (en) 2010-12-06 2013-03-12 Semiconductor Energy Laboratory Co., Ltd. Etching method and manufacturing method of thin film transistor
US9048327B2 (en) 2011-01-25 2015-06-02 Semiconductor Energy Laboratory Co., Ltd. Microcrystalline semiconductor film, method for manufacturing the same, and method for manufacturing semiconductor device
US9401396B2 (en) 2011-04-19 2016-07-26 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device and plasma oxidation treatment method
JP5832780B2 (ja) 2011-05-24 2015-12-16 株式会社半導体エネルギー研究所 半導体装置の製造方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3110792B2 (ja) * 1990-05-15 2000-11-20 旭硝子株式会社 多結晶半導体薄膜トランジスタの製造方法及びアクティブマトリックス基板
US6734387B2 (en) * 1999-05-27 2004-05-11 Spectra Physics Lasers, Inc. Method and apparatus for micro-machining of articles that include polymeric materials
JP2001077450A (ja) * 1999-09-07 2001-03-23 Japan Science & Technology Corp 固体レーザー装置
JP4401647B2 (ja) * 2001-11-30 2010-01-20 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP4813743B2 (ja) * 2002-07-24 2011-11-09 株式会社 日立ディスプレイズ 画像表示装置の製造方法
JP4660074B2 (ja) * 2003-05-26 2011-03-30 富士フイルム株式会社 レーザアニール装置

Similar Documents

Publication Publication Date Title
JP2005191546A5 (enrdf_load_stackoverflow)
EP1537938A3 (en) Laser irradiation apparatus, laser irradiation method, and method for manufacturing semiconductor device
CN105499792B (zh) 基于双波长飞秒激光电子动态调控硅表面纳米柱制备方法
TWI424479B (zh) 利用飛秒雷射圖案化多晶氧化銦錫之方法
Giannuzzi et al. Large area laser-induced periodic surface structures on steel by bursts of femtosecond pulses with picosecond delays
JP2010142862A (ja) 誘電体材料表面のナノ周期構造形成方法
CN108568594A (zh) 基于类等离子体透镜效应调控晶硅表面波纹结构的方法
EP1547719A3 (en) Laser irradiation apparatus, laser irradiation method, and method for manufacturing crystalline semiconductor film
CN103038862B (zh) 激光退火方法及其装置
WO2005043699B1 (en) Laser processing of a locally heated target material
JP2006114627A5 (enrdf_load_stackoverflow)
CN104625416A (zh) 基于方孔辅助电子动态调控晶硅表面周期性微纳结构方法
JP2010274328A5 (enrdf_load_stackoverflow)
CN106975841A (zh) 飞秒激光双脉冲空气中一步法制备金属拉曼基底
Bashir et al. Surface and structural modifications of titanium induced by various pulse energies of a femtosecond laser in liquid and dry environment
CN108326451A (zh) 一种飞秒激光薄膜微群孔高效制造方法
Le et al. Structural modifications induced in dentin by femtosecond laser
Wang et al. Femtosecond pulsed laser-induced periodic surface structures on GaN/sapphire
Zheleznov et al. Laser etching of germanium
CN109132998A (zh) 单脉冲纳秒激光诱导透明介电材料表面周期性结构的方法
TW201017762A (en) Method for patterning crystalline indium tim oxide
KR20130076440A (ko) 레이저 절단 장치 및 절단 방법
Trtica et al. Surface modifications of Ti6Al4V by a picosecond Nd: YAG laser
JP2004306127A (ja) 薄膜パターニング加工方法
JP5584560B2 (ja) レーザスクライブ方法