JP2005183904A - 電子部品にはんだ領域を形成する方法及びはんだ領域を有する電子部品 - Google Patents

電子部品にはんだ領域を形成する方法及びはんだ領域を有する電子部品 Download PDF

Info

Publication number
JP2005183904A
JP2005183904A JP2004096963A JP2004096963A JP2005183904A JP 2005183904 A JP2005183904 A JP 2005183904A JP 2004096963 A JP2004096963 A JP 2004096963A JP 2004096963 A JP2004096963 A JP 2004096963A JP 2005183904 A JP2005183904 A JP 2005183904A
Authority
JP
Japan
Prior art keywords
solder paste
solder
contact pads
substrate
metal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2004096963A
Other languages
English (en)
Japanese (ja)
Other versions
JP2005183904A5 (enExample
Inventor
Nathaniel E Brese
ナサニエル・イー・ブレス
Michael P Toben
マイケル・ピー・トーベン
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
DuPont Electronic Materials International LLC
Original Assignee
Rohm and Haas Electronic Materials LLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rohm and Haas Electronic Materials LLC filed Critical Rohm and Haas Electronic Materials LLC
Publication of JP2005183904A publication Critical patent/JP2005183904A/ja
Publication of JP2005183904A5 publication Critical patent/JP2005183904A5/ja
Pending legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
    • H05K3/12—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using thick film techniques, e.g. printing techniques to apply the conductive material or similar techniques for applying conductive paste or ink patterns
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K3/00—Tools, devices, or special appurtenances for soldering, e.g. brazing, or unsoldering, not specially adapted for particular methods
    • B23K3/06—Solder feeding devices; Solder melting pans
    • B23K3/0607—Solder feeding devices
    • B23K3/0638—Solder feeding devices for viscous material feeding, e.g. solder paste feeding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/10—Bump connectors ; Manufacturing methods related thereto
    • H01L24/11—Manufacturing methods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
    • H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
    • H05K3/34—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
    • H05K3/3457—Solder materials or compositions; Methods of application thereof
    • H05K3/3485—Applying solder paste, slurry or powder
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2101/00—Articles made by soldering, welding or cutting
    • B23K2101/36—Electric or electronic devices
    • B23K2101/40—Semiconductor devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/0556—Disposition
    • H01L2224/05568—Disposition the whole external layer protruding from the surface
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/05573—Single external layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/05599—Material
    • H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/05601—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
    • H01L2224/05611—Tin [Sn] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/05599—Material
    • H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/05617—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/05624—Aluminium [Al] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/05599—Material
    • H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/05638—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/05644—Gold [Au] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/05599—Material
    • H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/05638—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/05647—Copper [Cu] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/05599—Material
    • H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/05638—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/05655—Nickel [Ni] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/05599—Material
    • H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/05663—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
    • H01L2224/05664—Palladium [Pd] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/05599—Material
    • H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/05663—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
    • H01L2224/05666—Titanium [Ti] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/11—Manufacturing methods
    • H01L2224/1147—Manufacturing methods using a lift-off mask
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001—Core members of the bump connector
    • H01L2224/13099—Material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H01L2224/818—Bonding techniques
    • H01L2224/81801—Soldering or alloying
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01005—Boron [B]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01006—Carbon [C]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01013—Aluminum [Al]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01022—Titanium [Ti]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01024—Chromium [Cr]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01029—Copper [Cu]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/0103—Zinc [Zn]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01032—Germanium [Ge]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01033—Arsenic [As]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01046—Palladium [Pd]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01047—Silver [Ag]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01049—Indium [In]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/0105—Tin [Sn]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01051—Antimony [Sb]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01057—Lanthanum [La]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01074—Tungsten [W]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01075—Rhenium [Re]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01078—Platinum [Pt]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01082—Lead [Pb]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/0132—Binary Alloys
    • H01L2924/01322—Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/0132—Binary Alloys
    • H01L2924/01327—Intermediate phases, i.e. intermetallics compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/014—Solder alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/049—Nitrides composed of metals from groups of the periodic table
    • H01L2924/0494—4th Group
    • H01L2924/04941—TiN
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12042—LASER
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/14—Integrated circuits
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/02—Fillers; Particles; Fibers; Reinforcement materials
    • H05K2201/0203—Fillers and particles
    • H05K2201/0242—Shape of an individual particle
    • H05K2201/0257—Nanoparticles
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/04—Soldering or other types of metallurgic bonding
    • H05K2203/043—Reflowing of solder coated conductors, not during connection of components, e.g. reflowing solder paste
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
    • H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
    • H05K3/34—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
    • H05K3/3457—Solder materials or compositions; Methods of application thereof
    • H05K3/3463—Solder compositions in relation to features of the printed circuit board or the mounting process

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Electric Connection Of Electric Components To Printed Circuits (AREA)
  • Wire Bonding (AREA)
JP2004096963A 2003-12-22 2004-03-29 電子部品にはんだ領域を形成する方法及びはんだ領域を有する電子部品 Pending JP2005183904A (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US53226403P 2003-12-22 2003-12-22

Publications (2)

Publication Number Publication Date
JP2005183904A true JP2005183904A (ja) 2005-07-07
JP2005183904A5 JP2005183904A5 (enExample) 2007-05-10

Family

ID=34794223

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2004096963A Pending JP2005183904A (ja) 2003-12-22 2004-03-29 電子部品にはんだ領域を形成する方法及びはんだ領域を有する電子部品

Country Status (5)

Country Link
US (1) US20050133572A1 (enExample)
JP (1) JP2005183904A (enExample)
KR (1) KR20050063689A (enExample)
CN (1) CN100469222C (enExample)
TW (1) TWI254392B (enExample)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008252053A (ja) * 2007-03-05 2008-10-16 Toshiba Corp 半導体装置の製造方法及び半導体装置
JP2010118633A (ja) * 2008-11-12 2010-05-27 Samsung Electro-Mechanics Co Ltd 埋込み型ソルダーバンプを持つプリント基板及びその製造方法
JP2012019244A (ja) * 2011-10-24 2012-01-26 Fujitsu Ltd 半導体装置、回路配線基板及び半導体装置の製造方法

Families Citing this family (35)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102004031034A1 (de) * 2003-06-25 2005-02-10 Behr Gmbh & Co. Kg Flussmittel zum Löten von Metallbauteilen
JP4069867B2 (ja) * 2004-01-05 2008-04-02 セイコーエプソン株式会社 部材の接合方法
US20060196579A1 (en) * 2005-03-07 2006-09-07 Skipor Andrew F High energy soldering composition and method of soldering
KR100610273B1 (ko) * 2005-04-19 2006-08-09 삼성전기주식회사 플립칩 방법
US7326636B2 (en) * 2005-05-24 2008-02-05 Agilent Technologies, Inc. Method and circuit structure employing a photo-imaged solder mask
US7615476B2 (en) * 2005-06-30 2009-11-10 Intel Corporation Electromigration-resistant and compliant wire interconnects, nano-sized solder compositions, systems made thereof, and methods of assembling soldered packages
KR100719905B1 (ko) * 2005-12-29 2007-05-18 삼성전자주식회사 Ｓｎ-Ｂｉ계 솔더 합금 및 이를 이용한 반도체 소자
CN100556238C (zh) * 2006-05-23 2009-10-28 达方电子股份有限公司 焊接电子零件在基板上的方法
KR100796983B1 (ko) 2006-11-21 2008-01-22 삼성전기주식회사 인쇄회로기판 및 그 제조방법
KR100834515B1 (ko) * 2007-03-07 2008-06-02 삼성전기주식회사 금속 나노입자 에어로졸을 이용한 포토레지스트 적층기판의형성방법, 절연기판의 도금방법, 회로기판의 금속층의표면처리방법 및 적층 세라믹 콘덴서의 제조방법
US20090065555A1 (en) * 2007-09-12 2009-03-12 Stephen Leslie Buchwalter Electrical interconnect forming method
US20090108442A1 (en) * 2007-10-25 2009-04-30 International Business Machines Corporation Self-assembled stress relief interface
JP5238598B2 (ja) * 2009-04-30 2013-07-17 昭和電工株式会社 回路基板の製造方法
KR101077359B1 (ko) 2009-09-23 2011-10-26 삼성전기주식회사 방열회로기판 및 그 제조방법
US8507325B2 (en) * 2010-01-28 2013-08-13 International Business Machines Corporation Co-axial restraint for connectors within flip-chip packages
JP5658898B2 (ja) * 2010-03-29 2015-01-28 株式会社日立製作所 ウェハ接合半導体装置の製造方法
KR101740483B1 (ko) * 2011-05-02 2017-06-08 삼성전자 주식회사 고정 부재 및 할로겐-프리 패키지간 연결부를 포함하는 적층 패키지
KR101940237B1 (ko) * 2012-06-14 2019-01-18 한국전자통신연구원 미세 피치 ｐｃｂ 기판에 솔더 범프 형성 방법 및 이를 이용한 반도체 소자의 플립 칩 본딩 방법
CN103028869A (zh) * 2012-12-13 2013-04-10 深圳市唯特偶新材料股份有限公司 一种低银高润湿焊锡膏及其制备方法
US9617189B2 (en) * 2013-08-30 2017-04-11 Ut-Battelle, Llc Apparatus and method for materials processing utilizing a rotating magnetic field
CN107848074A (zh) * 2015-01-09 2018-03-27 马萨诸塞大学 无铅纳米焊料的制备和应用
CN104979319B (zh) * 2015-06-16 2018-11-16 江苏师范大学 一种实现3d封装芯片互连的记忆焊点
US10886250B2 (en) 2015-07-10 2021-01-05 Invensas Corporation Structures and methods for low temperature bonding using nanoparticles
CN105177387B (zh) * 2015-08-06 2017-03-15 江苏师范大学 一种3D芯片堆叠的含Eu、纳米Au的互连材料
CN105161483A (zh) * 2015-08-06 2015-12-16 江苏师范大学 一种3D芯片堆叠的含Yb、纳米Cu的互连材料
US10597767B2 (en) * 2016-02-22 2020-03-24 Roswell Biotechnologies, Inc. Nanoparticle fabrication
US10265806B2 (en) * 2016-10-04 2019-04-23 General Electric Company System and method for sealing internal channels defined in a component
TWI822659B (zh) 2016-10-27 2023-11-21 美商艾德亞半導體科技有限責任公司 用於低溫接合的結構和方法
KR102409913B1 (ko) * 2017-12-06 2022-06-16 삼성전자주식회사 솔더 리플로우 장치 및 이를 이용한 전자 장치의 제조 방법
KR102827173B1 (ko) * 2018-06-26 2025-06-27 가부시끼가이샤 레조낙 이방성 도전 필름과 그 제조 방법 및 접속 구조체의 제조 방법
KR102856173B1 (ko) 2018-06-26 2025-09-04 가부시끼가이샤 레조낙 땜납 입자
CN112313031A (zh) * 2018-06-26 2021-02-02 昭和电工材料株式会社 焊料粒子及焊料粒子的制造方法
DE102018215672A1 (de) * 2018-09-14 2020-03-19 Continental Automotive Gmbh Verfahren zur Herstellung einer Leiterplattenanordnung und Leiterplattenanordnung
KR20230126736A (ko) 2020-12-30 2023-08-30 아데이아 세미컨덕터 본딩 테크놀로지스 인코포레이티드 전도성 특징부를 갖는 구조 및 그 형성방법
JP7597131B2 (ja) * 2021-02-03 2024-12-10 株式会社レゾナック はんだペースト、はんだバンプの形成方法及びはんだバンプ付き部材の製造方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000164531A (ja) * 1998-11-30 2000-06-16 Toshiba Corp 微粒子膜形成装置・形成方法、ならびに半導体装置およびその製造方法
JP2003059958A (ja) * 2001-08-15 2003-02-28 Sony Corp マイクロバンプの形成方法
WO2004103043A1 (ja) * 2003-05-16 2004-11-25 Harima Chemicals, Inc. 銅微粒子焼結体型の微細形状導電体の形成方法、該方法を応用した銅微細配線ならびに銅薄膜の形成方法

Family Cites Families (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4557767A (en) * 1983-10-31 1985-12-10 Scm Corporation Fusible powdered metal paste
JPS63238994A (ja) * 1987-03-25 1988-10-05 Tdk Corp 半田組成物
US5141568A (en) * 1990-05-15 1992-08-25 Hughes Aircraft Company Water-soluble soldering paste
US5294242A (en) * 1991-09-30 1994-03-15 Air Products And Chemicals Method for making metal powders
US5346118A (en) * 1993-09-28 1994-09-13 At&T Bell Laboratories Surface mount solder assembly of leadless integrated circuit packages to substrates
US5382300A (en) * 1994-03-22 1995-01-17 At&T Corp. Solder paste mixture
US5666643A (en) * 1995-02-23 1997-09-09 General Electric Company High temperature braze material
JPH11514300A (ja) * 1995-10-06 1999-12-07 ブラウン ユニバーシティ リサーチ ファウンデーション はんだ付けの方法及び配合物
US6205264B1 (en) * 1998-04-14 2001-03-20 Lucent Technologies Inc. Optical assembly with improved dimensional stability
US6136689A (en) * 1998-08-14 2000-10-24 Micron Technology, Inc. Method of forming a micro solder ball for use in C4 bonding process
GB9929521D0 (en) * 1999-12-15 2000-02-09 Secr Defence Bonded products and methods of fabrication therefor
JP3423930B2 (ja) * 1999-12-27 2003-07-07 富士通株式会社 バンプ形成方法、電子部品、および半田ペースト
AU2001261952A1 (en) * 2000-05-24 2001-12-03 Stephen F. Corbin Variable melting point solders and brazes
US6932519B2 (en) * 2000-11-16 2005-08-23 Shipley Company, L.L.C. Optical device package
US6883977B2 (en) * 2000-12-14 2005-04-26 Shipley Company, L.L.C. Optical device package for flip-chip mounting
JP2003166007A (ja) * 2001-03-28 2003-06-13 Tamura Kaken Co Ltd 金属微粒子の製造方法、金属微粒子含有物及びソルダーペースト組成物
JP2002359426A (ja) * 2001-06-01 2002-12-13 Hitachi Ltd 光モジュール及び光通信システム
US20030146019A1 (en) * 2001-11-22 2003-08-07 Hiroyuki Hirai Board and ink used for forming conductive pattern, and method using thereof
US7416108B2 (en) * 2002-01-24 2008-08-26 Siemens Power Generation, Inc. High strength diffusion brazing utilizing nano-powders
CN1152769C (zh) * 2002-07-24 2004-06-09 北京工业大学 纳米颗粒增强的锡铅基复合钎料及其制备方法
US7017795B2 (en) * 2003-11-03 2006-03-28 Indium Corporation Of America Solder pastes for providing high elasticity, low rigidity solder joints
US7331500B2 (en) * 2004-06-25 2008-02-19 Intel Corporation Solder bumps formation using solder paste with shape retaining attribute

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000164531A (ja) * 1998-11-30 2000-06-16 Toshiba Corp 微粒子膜形成装置・形成方法、ならびに半導体装置およびその製造方法
JP2003059958A (ja) * 2001-08-15 2003-02-28 Sony Corp マイクロバンプの形成方法
WO2004103043A1 (ja) * 2003-05-16 2004-11-25 Harima Chemicals, Inc. 銅微粒子焼結体型の微細形状導電体の形成方法、該方法を応用した銅微細配線ならびに銅薄膜の形成方法

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008252053A (ja) * 2007-03-05 2008-10-16 Toshiba Corp 半導体装置の製造方法及び半導体装置
JP2010118633A (ja) * 2008-11-12 2010-05-27 Samsung Electro-Mechanics Co Ltd 埋込み型ソルダーバンプを持つプリント基板及びその製造方法
US9021690B2 (en) 2008-11-12 2015-05-05 Samsung Electro-Mechanics Co., Ltd. Method of manufacturing printed circuit board having buried solder bump
JP2012019244A (ja) * 2011-10-24 2012-01-26 Fujitsu Ltd 半導体装置、回路配線基板及び半導体装置の製造方法

Also Published As

Publication number Publication date
US20050133572A1 (en) 2005-06-23
KR20050063689A (ko) 2005-06-28
CN100469222C (zh) 2009-03-11
TW200527566A (en) 2005-08-16
CN1642392A (zh) 2005-07-20
TWI254392B (en) 2006-05-01

Similar Documents

Publication Publication Date Title
CN100469222C (zh) 在电子元件上形成焊料区的方法和具有焊料区的电子元件
KR100894929B1 (ko) 반도체 장치의 제조 방법
TWI233684B (en) Electronic device
US20090057378A1 (en) In-situ chip attachment using self-organizing solder
JP3556922B2 (ja) バンプ形成方法
JPH0788679A (ja) 無鉛すずアンチモン・ビスマス銅はんだ合金
WO2008026761A1 (en) Lid for functional part and process for producing the same
JPH0788680A (ja) 高温無鉛すずベースはんだの組成
TW200533456A (en) Electronic devices and methods of forming electronic devices
JPH0788681A (ja) 無鉛高温すずベース多成分はんだ
JP5173214B2 (ja) 導電性樹脂組成物とこれを用いた電極間の接続方法及び電子部品と回路基板の電気接続方法
JP4791685B2 (ja) 導電性ボール、電極構造、電子部品の電極の形成方法、電子部品ならびに電子機器
JP2008500181A (ja) はんだの組成物、及びはんだ接続部を製造する方法
JP2007134476A (ja) 電子部品の半田付け方法および電子部品の半田付け構造
CN103151430B (zh) 纳米金属粒实现led的低温金属界面连接的制备方法
JP2001308144A (ja) フリップチップ実装方法
CN101197296B (zh) 无助焊剂的凸点回流工艺
JP4025322B2 (ja) 半導体装置の製造方法
JP4367630B2 (ja) バンプ形成方法
JP2795535B2 (ja) 回路基板への電子部品実装方法
Hong et al. Fluxless solder bumping in flip chip package by plasma reflow
JPH11176881A (ja) 電子回路及びその製造方法
WO2025243793A1 (ja) ソルダペースト、及び接合体の製造方法
JP4685081B2 (ja) 電子部品製造方法
VIANCO Solder Mounting Technologies for Electronic Packaging

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20070315

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20070315

RD02 Notification of acceptance of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7422

Effective date: 20070315

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20100303

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20100730