CN101197296B - 无助焊剂的凸点回流工艺 - Google Patents
无助焊剂的凸点回流工艺 Download PDFInfo
- Publication number
- CN101197296B CN101197296B CN2006101190475A CN200610119047A CN101197296B CN 101197296 B CN101197296 B CN 101197296B CN 2006101190475 A CN2006101190475 A CN 2006101190475A CN 200610119047 A CN200610119047 A CN 200610119047A CN 101197296 B CN101197296 B CN 101197296B
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- CN
- China
- Prior art keywords
- salient point
- scaling powder
- seconds
- reflux technique
- time
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K3/00—Tools, devices, or special appurtenances for soldering, e.g. brazing, or unsoldering, not specially adapted for particular methods
- B23K3/06—Solder feeding devices; Solder melting pans
- B23K3/0607—Solder feeding devices
- B23K3/0623—Solder feeding devices for shaped solder piece feeding, e.g. preforms, bumps, balls, pellets, droplets
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/10—Bump connectors ; Manufacturing methods related thereto
- H01L24/11—Manufacturing methods
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/05001—Internal layers
- H01L2224/0502—Disposition
- H01L2224/05023—Disposition the whole internal layer protruding from the surface
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/05001—Internal layers
- H01L2224/0502—Disposition
- H01L2224/05026—Disposition the internal layer being disposed in a recess of the surface
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/0556—Disposition
- H01L2224/05568—Disposition the whole external layer protruding from the surface
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/0556—Disposition
- H01L2224/05571—Disposition the external layer being disposed in a recess of the surface
- H01L2224/05572—Disposition the external layer being disposed in a recess of the surface the external layer extending out of an opening
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/05599—Material
- H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/11—Manufacturing methods
- H01L2224/118—Post-treatment of the bump connector
- H01L2224/1181—Cleaning, e.g. oxide removal step, desmearing
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/02—Bonding areas ; Manufacturing methods related thereto
- H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L24/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/013—Alloys
- H01L2924/0132—Binary Alloys
- H01L2924/01322—Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/14—Integrated circuits
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Engineering (AREA)
- Electric Connection Of Electric Components To Printed Circuits (AREA)
Abstract
Description
Claims (15)
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN2006101190475A CN101197296B (zh) | 2006-12-04 | 2006-12-04 | 无助焊剂的凸点回流工艺 |
US11/859,163 US7838411B2 (en) | 2006-12-04 | 2007-09-21 | Fluxless reflow process for bump formation |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN2006101190475A CN101197296B (zh) | 2006-12-04 | 2006-12-04 | 无助焊剂的凸点回流工艺 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101197296A CN101197296A (zh) | 2008-06-11 |
CN101197296B true CN101197296B (zh) | 2010-08-11 |
Family
ID=39474548
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2006101190475A Expired - Fee Related CN101197296B (zh) | 2006-12-04 | 2006-12-04 | 无助焊剂的凸点回流工艺 |
Country Status (2)
Country | Link |
---|---|
US (1) | US7838411B2 (zh) |
CN (1) | CN101197296B (zh) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8233285B2 (en) * | 2009-10-19 | 2012-07-31 | Cisco Technology, Inc. | Linecard to chassis securing |
US8701281B2 (en) * | 2009-12-17 | 2014-04-22 | Intel Corporation | Substrate metallization and ball attach metallurgy with a novel dopant element |
US9773744B2 (en) * | 2011-07-12 | 2017-09-26 | Globalfoundries Inc. | Solder bump cleaning before reflow |
KR101881063B1 (ko) * | 2011-12-12 | 2018-07-25 | 삼성전자주식회사 | 범프의 제조 방법 |
CN104485293B (zh) * | 2014-12-12 | 2017-08-11 | 通富微电子股份有限公司 | 一种提高金属凸块在真空回流工艺中的成球率的方法 |
KR20210029485A (ko) * | 2019-09-06 | 2021-03-16 | 삼성전자주식회사 | 솔더 범프 제조 장치 및 솔더 범프 형성 방법 |
JP7145839B2 (ja) * | 2019-12-18 | 2022-10-03 | 株式会社オリジン | はんだ付け基板の製造方法及びはんだ付け装置 |
CN118156159A (zh) * | 2024-01-29 | 2024-06-07 | 北京智创芯源科技有限公司 | 一种免清洗的缩球方法 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5345056A (en) * | 1991-12-12 | 1994-09-06 | Motorola, Inc. | Plasma based soldering by indirect heating |
US6849477B2 (en) * | 2002-10-12 | 2005-02-01 | Samsung Electronics Co., Ltd. | Method of fabricating and mounting flip chips |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3737565A1 (de) * | 1987-11-05 | 1989-05-24 | Ernst Hohnerlein | Verfahren und vorrichtung zum loeten |
US5211328A (en) * | 1992-05-22 | 1993-05-18 | International Business Machines | Method of applying solder |
FR2762715B1 (fr) * | 1997-04-28 | 2000-07-21 | Novatec | Procede de realisation et de brasage de billes de connexion electrique sur des plages d'accueil de raccordement electrique de circuits ou de composants electroniques et dispositif de mise en oeuvre |
US6362087B1 (en) * | 2000-05-05 | 2002-03-26 | Aptos Corporation | Method for fabricating a microelectronic fabrication having formed therein a redistribution structure |
JP2002178140A (ja) * | 2000-12-19 | 2002-06-25 | Iwaki Electronics Corp | 鉛フリーはんだ用のリフロー方法 |
DE10127889A1 (de) * | 2001-06-08 | 2002-12-19 | Infineon Technologies Ag | Verfahren zum Umschmelzen von auf Verbindungsstellen aufgebrachtem Lotmaterial |
TW200510570A (en) * | 2003-08-22 | 2005-03-16 | Arch Spec Chem Inc | Novel aqueous based metal etchant |
JP2006024659A (ja) * | 2004-07-07 | 2006-01-26 | Ngk Spark Plug Co Ltd | 配線基板の製造方法 |
JP2007149846A (ja) * | 2005-11-25 | 2007-06-14 | Toshiba Corp | 半導体装置の製造方法 |
-
2006
- 2006-12-04 CN CN2006101190475A patent/CN101197296B/zh not_active Expired - Fee Related
-
2007
- 2007-09-21 US US11/859,163 patent/US7838411B2/en active Active
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5345056A (en) * | 1991-12-12 | 1994-09-06 | Motorola, Inc. | Plasma based soldering by indirect heating |
US6849477B2 (en) * | 2002-10-12 | 2005-02-01 | Samsung Electronics Co., Ltd. | Method of fabricating and mounting flip chips |
Non-Patent Citations (1)
Title |
---|
JP特开平11-145193A 1999.05.28 |
Also Published As
Publication number | Publication date |
---|---|
CN101197296A (zh) | 2008-06-11 |
US20080128476A1 (en) | 2008-06-05 |
US7838411B2 (en) | 2010-11-23 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
ASS | Succession or assignment of patent right |
Owner name: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (BEIJING |
|
C41 | Transfer of patent application or patent right or utility model | ||
TR01 | Transfer of patent right |
Effective date of registration: 20111111 Address after: 201203 Shanghai City, Pudong New Area Zhangjiang Road No. 18 Co-patentee after: Semiconductor Manufacturing International (Beijing) Corporation Patentee after: Semiconductor Manufacturing International (Shanghai) Corporation Address before: 201203 Shanghai City, Pudong New Area Zhangjiang Road No. 18 Patentee before: Semiconductor Manufacturing International (Shanghai) Corporation |
|
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20100811 Termination date: 20181204 |
|
CF01 | Termination of patent right due to non-payment of annual fee |