JP2005183619A - 不揮発メモリ装置 - Google Patents

不揮発メモリ装置 Download PDF

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Publication number
JP2005183619A
JP2005183619A JP2003421309A JP2003421309A JP2005183619A JP 2005183619 A JP2005183619 A JP 2005183619A JP 2003421309 A JP2003421309 A JP 2003421309A JP 2003421309 A JP2003421309 A JP 2003421309A JP 2005183619 A JP2005183619 A JP 2005183619A
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JP
Japan
Prior art keywords
memory device
switching element
voltage
transistor
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP2003421309A
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English (en)
Japanese (ja)
Other versions
JP2005183619A5 (enExample
Inventor
Takayuki Tsunoda
隆行 角田
Masahiko Hirai
匡彦 平井
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP2003421309A priority Critical patent/JP2005183619A/ja
Priority to US10/546,216 priority patent/US7359230B2/en
Priority to PCT/JP2004/018522 priority patent/WO2005060001A1/en
Publication of JP2005183619A publication Critical patent/JP2005183619A/ja
Publication of JP2005183619A5 publication Critical patent/JP2005183619A5/ja
Withdrawn legal-status Critical Current

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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0009—RRAM elements whose operation depends upon chemical change
    • G11C13/0014—RRAM elements whose operation depends upon chemical change comprising cells based on organic memory material
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06K—GRAPHICAL DATA READING; PRESENTATION OF DATA; RECORD CARRIERS; HANDLING RECORD CARRIERS
    • G06K19/00—Record carriers for use with machines and with at least a part designed to carry digital markings
    • G06K19/06—Record carriers for use with machines and with at least a part designed to carry digital markings characterised by the kind of the digital marking, e.g. shape, nature, code
    • G06K19/067—Record carriers with conductive marks, printed circuits or semiconductor circuit elements, e.g. credit or identity cards also with resonating or responding marks without active components
    • G06K19/07—Record carriers with conductive marks, printed circuits or semiconductor circuit elements, e.g. credit or identity cards also with resonating or responding marks without active components with integrated circuit chips
    • G06K19/0723—Record carriers with conductive marks, printed circuits or semiconductor circuit elements, e.g. credit or identity cards also with resonating or responding marks without active components with integrated circuit chips the record carrier comprising an arrangement for non-contact communication, e.g. wireless communication circuits on transponder cards, non-contact smart cards or RFIDs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B20/00—Read-only memory [ROM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B20/00—Read-only memory [ROM] devices
    • H10B20/20—Programmable ROM [PROM] devices comprising field-effect components
    • H10B20/25—One-time programmable ROM [OTPROM] devices, e.g. using electrically-fusible links
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K19/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic element specially adapted for rectifying, amplifying, oscillating or switching, covered by group H10K10/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K19/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic element specially adapted for rectifying, amplifying, oscillating or switching, covered by group H10K10/00
    • H10K19/80—Interconnections, e.g. terminals

Landscapes

  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Theoretical Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Mathematical Physics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Semiconductor Memories (AREA)
  • Thin Film Transistor (AREA)
  • Read Only Memory (AREA)
JP2003421309A 2003-12-18 2003-12-18 不揮発メモリ装置 Withdrawn JP2005183619A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2003421309A JP2005183619A (ja) 2003-12-18 2003-12-18 不揮発メモリ装置
US10/546,216 US7359230B2 (en) 2003-12-18 2004-12-06 Nonvolatile memory device
PCT/JP2004/018522 WO2005060001A1 (en) 2003-12-18 2004-12-06 Nonvolatile memory device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2003421309A JP2005183619A (ja) 2003-12-18 2003-12-18 不揮発メモリ装置

Publications (2)

Publication Number Publication Date
JP2005183619A true JP2005183619A (ja) 2005-07-07
JP2005183619A5 JP2005183619A5 (enExample) 2007-02-01

Family

ID=34697277

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2003421309A Withdrawn JP2005183619A (ja) 2003-12-18 2003-12-18 不揮発メモリ装置

Country Status (3)

Country Link
US (1) US7359230B2 (enExample)
JP (1) JP2005183619A (enExample)
WO (1) WO2005060001A1 (enExample)

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007073950A (ja) * 2005-08-12 2007-03-22 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法
JP2007073943A (ja) * 2005-08-12 2007-03-22 Semiconductor Energy Lab Co Ltd 記憶装置及び半導体装置
JP2007173812A (ja) * 2005-12-21 2007-07-05 Palo Alto Research Center Inc 薄膜トランジスタバックプレーン回路およびその製造方法
JP2007273967A (ja) * 2006-03-10 2007-10-18 Semiconductor Energy Lab Co Ltd 記憶素子及び半導体装置
JP2007318116A (ja) * 2006-04-28 2007-12-06 Semiconductor Energy Lab Co Ltd 半導体装置及びその作製方法
JP2008123595A (ja) * 2006-11-10 2008-05-29 Matsushita Electric Ind Co Ltd 半導体記憶装置
WO2008120286A1 (ja) * 2007-02-27 2008-10-09 Fujitsu Microelectronics Limited 半導体記憶装置、半導体記憶装置の製造方法、およびパッケージ樹脂形成方法
JP2011054733A (ja) * 2009-09-01 2011-03-17 National Institute For Materials Science 酸化アルミニウム薄膜を用いたスイッチング素子とこれを有する電子回路
US8421061B2 (en) 2006-03-10 2013-04-16 Semiconductor Energy Laboratory Co., Ltd. Memory element and semiconductor device including the memory element
US8536067B2 (en) 2005-08-12 2013-09-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US8847209B2 (en) 2005-08-12 2014-09-30 Semiconductor Energy Laboratory Co., Ltd. Memory device and a semiconductor device

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102004025676B4 (de) * 2004-05-26 2008-09-04 Qimonda Ag Integrierter Halbleiterspeicher mit organischem Auswahltransistor
DE102004041907B3 (de) * 2004-08-30 2006-03-23 Infineon Technologies Ag Resistive Speicheranordnung, insbesondere CBRAM-Speicher
CN100568390C (zh) * 2004-09-30 2009-12-09 Nxp股份有限公司 含有包括可编程电阻器的存储单元的集成电路以及用于寻址包括可编程电阻器的存储单元的方法
EP2348460B1 (en) 2004-10-18 2014-04-23 Semiconductor Energy Laboratory Co, Ltd. Organic anti fuse memory
WO2006043687A1 (en) * 2004-10-22 2006-04-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR101258672B1 (ko) 2004-10-22 2013-04-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체장치
WO2006057417A1 (en) * 2004-11-26 2006-06-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US7926726B2 (en) * 2005-03-28 2011-04-19 Semiconductor Energy Laboratory Co., Ltd. Survey method and survey system
US7700984B2 (en) * 2005-05-20 2010-04-20 Semiconductor Energy Laboratory Co., Ltd Semiconductor device including memory cell
US7868320B2 (en) * 2005-05-31 2011-01-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US8188461B2 (en) * 2005-05-31 2012-05-29 Semiconductor Energy Laboratory Co., Ltd. Organic memory device
US8138075B1 (en) 2006-02-06 2012-03-20 Eberlein Dietmar C Systems and methods for the manufacture of flat panel devices
EP1850378A3 (en) * 2006-04-28 2013-08-07 Semiconductor Energy Laboratory Co., Ltd. Memory device and semicondutor device
US8283724B2 (en) 2007-02-26 2012-10-09 Semiconductor Energy Laboratory Co., Ltd. Memory element and semiconductor device, and method for manufacturing the same
JP5347377B2 (ja) * 2007-08-31 2013-11-20 大日本印刷株式会社 縦型有機トランジスタ、その製造方法及び発光素子
CN101569001B (zh) * 2007-11-28 2011-09-28 松下电器产业株式会社 挠性半导体装置的制造方法及挠性半导体装置
KR20120081231A (ko) * 2008-05-16 2012-07-18 가부시키가이샤 한도오따이 에네루기 켄큐쇼 발광소자, 및 조명장치
JP5549105B2 (ja) * 2009-04-15 2014-07-16 ソニー株式会社 抵抗変化型メモリデバイスおよびその動作方法
JP5333311B2 (ja) * 2010-03-26 2013-11-06 ソニー株式会社 不揮発性記憶装置
JP5429638B2 (ja) * 2010-06-28 2014-02-26 株式会社リコー 画像形成装置及び画像形成装置の電源制御方法
CN102930898B (zh) * 2012-11-12 2015-07-15 中国电子科技集团公司第五十四研究所 一种构建多端口异步存储模块的方法

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US5070385A (en) * 1989-10-20 1991-12-03 Radiant Technologies Ferroelectric non-volatile variable resistive element
JP3170101B2 (ja) 1993-04-15 2001-05-28 株式会社東芝 半導体装置及びその製造方法
JP3559580B2 (ja) 1993-12-17 2004-09-02 財団法人国際科学振興財団 半導体装置
US6034882A (en) * 1998-11-16 2000-03-07 Matrix Semiconductor, Inc. Vertically stacked field programmable nonvolatile memory and method of fabrication
US6385407B1 (en) 1998-12-28 2002-05-07 Hitachi Maxell, Ltd. Accommodating enclosure and management system
JP4297579B2 (ja) 1998-12-28 2009-07-15 日立マクセル株式会社 管理システム
JP2001189431A (ja) 1999-12-28 2001-07-10 Seiko Epson Corp メモリのセル構造及びメモリデバイス
KR20020030272A (ko) 2000-03-28 2002-04-24 롤페스 요하네스 게라투스 알베르투스 집적 회로 및 이를 포함하는 트랜스폰더 및 시큐리티페이퍼 및 집적 회로 내의 메모리 프로그래밍 방법
US6587370B2 (en) * 2000-11-01 2003-07-01 Canon Kabushiki Kaisha Magnetic memory and information recording and reproducing method therefor
US6724651B2 (en) * 2001-04-06 2004-04-20 Canon Kabushiki Kaisha Nonvolatile solid-state memory and method of driving the same
JP2003086775A (ja) * 2001-09-07 2003-03-20 Canon Inc 磁気メモリ装置およびその製造方法
JP4124635B2 (ja) * 2002-12-05 2008-07-23 シャープ株式会社 半導体記憶装置及びメモリセルアレイの消去方法

Cited By (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007073950A (ja) * 2005-08-12 2007-03-22 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法
JP2007073943A (ja) * 2005-08-12 2007-03-22 Semiconductor Energy Lab Co Ltd 記憶装置及び半導体装置
US8847209B2 (en) 2005-08-12 2014-09-30 Semiconductor Energy Laboratory Co., Ltd. Memory device and a semiconductor device
US8536067B2 (en) 2005-08-12 2013-09-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
JP2007173812A (ja) * 2005-12-21 2007-07-05 Palo Alto Research Center Inc 薄膜トランジスタバックプレーン回路およびその製造方法
US8421061B2 (en) 2006-03-10 2013-04-16 Semiconductor Energy Laboratory Co., Ltd. Memory element and semiconductor device including the memory element
JP2007273967A (ja) * 2006-03-10 2007-10-18 Semiconductor Energy Lab Co Ltd 記憶素子及び半導体装置
JP2007318116A (ja) * 2006-04-28 2007-12-06 Semiconductor Energy Lab Co Ltd 半導体装置及びその作製方法
JP2008123595A (ja) * 2006-11-10 2008-05-29 Matsushita Electric Ind Co Ltd 半導体記憶装置
WO2008120286A1 (ja) * 2007-02-27 2008-10-09 Fujitsu Microelectronics Limited 半導体記憶装置、半導体記憶装置の製造方法、およびパッケージ樹脂形成方法
JP5163641B2 (ja) * 2007-02-27 2013-03-13 富士通セミコンダクター株式会社 半導体記憶装置、半導体記憶装置の製造方法、およびパッケージ樹脂形成方法
US8582343B2 (en) 2007-02-27 2013-11-12 Fujitsu Semiconductor Limited Semiconductor storage device, semiconductor storage device manufacturing method and package resin forming method
US8921125B2 (en) 2007-02-27 2014-12-30 Fujitsu Semiconductor Limited Method of making ferroelectric memory device with barrier layer and novolac resin passivation layer
JP2011054733A (ja) * 2009-09-01 2011-03-17 National Institute For Materials Science 酸化アルミニウム薄膜を用いたスイッチング素子とこれを有する電子回路

Also Published As

Publication number Publication date
US7359230B2 (en) 2008-04-15
WO2005060001A1 (en) 2005-06-30
US20060157772A1 (en) 2006-07-20

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