JP2005181523A - 設計パターン補正方法、マスクパターン作成方法、半導体装置の製造方法、設計パターン補正システム、及び設計パターン補正プログラム - Google Patents

設計パターン補正方法、マスクパターン作成方法、半導体装置の製造方法、設計パターン補正システム、及び設計パターン補正プログラム Download PDF

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Publication number
JP2005181523A
JP2005181523A JP2003419600A JP2003419600A JP2005181523A JP 2005181523 A JP2005181523 A JP 2005181523A JP 2003419600 A JP2003419600 A JP 2003419600A JP 2003419600 A JP2003419600 A JP 2003419600A JP 2005181523 A JP2005181523 A JP 2005181523A
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Japan
Prior art keywords
planar shape
design pattern
pattern
design
layer
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JP2003419600A
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English (en)
Japanese (ja)
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JP2005181523A5 (enExample
Inventor
Toshiya Kotani
敏也 小谷
Suigen Kiyou
帥現 姜
Hirotaka Ichikawa
裕隆 市川
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Toshiba Electronic Device Solutions Corp
Original Assignee
Toshiba Corp
Toshiba Microelectronics Corp
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Publication date
Application filed by Toshiba Corp, Toshiba Microelectronics Corp filed Critical Toshiba Corp
Priority to JP2003419600A priority Critical patent/JP2005181523A/ja
Priority to US11/012,613 priority patent/US7266801B2/en
Priority to TW093139159A priority patent/TWI256527B/zh
Priority to CN2004101013575A priority patent/CN1630032B/zh
Publication of JP2005181523A publication Critical patent/JP2005181523A/ja
Publication of JP2005181523A5 publication Critical patent/JP2005181523A5/ja
Pending legal-status Critical Current

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    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F30/00—Computer-aided design [CAD]
    • G06F30/30—Circuit design
    • G06F30/39—Circuit design at the physical level
    • G06F30/398—Design verification or optimisation, e.g. using design rule check [DRC], layout versus schematics [LVS] or finite element methods [FEM]

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Theoretical Computer Science (AREA)
  • Evolutionary Computation (AREA)
  • Geometry (AREA)
  • General Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
JP2003419600A 2003-12-17 2003-12-17 設計パターン補正方法、マスクパターン作成方法、半導体装置の製造方法、設計パターン補正システム、及び設計パターン補正プログラム Pending JP2005181523A (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2003419600A JP2005181523A (ja) 2003-12-17 2003-12-17 設計パターン補正方法、マスクパターン作成方法、半導体装置の製造方法、設計パターン補正システム、及び設計パターン補正プログラム
US11/012,613 US7266801B2 (en) 2003-12-17 2004-12-16 Design pattern correction method and mask pattern producing method
TW093139159A TWI256527B (en) 2003-12-17 2004-12-16 Design pattern correction method, mask producing method and semiconductor device producing method
CN2004101013575A CN1630032B (zh) 2003-12-17 2004-12-17 设计图形校正方法、掩模制造方法及半导体器件制造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2003419600A JP2005181523A (ja) 2003-12-17 2003-12-17 設計パターン補正方法、マスクパターン作成方法、半導体装置の製造方法、設計パターン補正システム、及び設計パターン補正プログラム

Publications (2)

Publication Number Publication Date
JP2005181523A true JP2005181523A (ja) 2005-07-07
JP2005181523A5 JP2005181523A5 (enExample) 2005-08-25

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JP2003419600A Pending JP2005181523A (ja) 2003-12-17 2003-12-17 設計パターン補正方法、マスクパターン作成方法、半導体装置の製造方法、設計パターン補正システム、及び設計パターン補正プログラム

Country Status (4)

Country Link
US (1) US7266801B2 (enExample)
JP (1) JP2005181523A (enExample)
CN (1) CN1630032B (enExample)
TW (1) TWI256527B (enExample)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7673258B2 (en) 2006-03-31 2010-03-02 Kabushiki Kaisha Toshiba Design data creating method, design data creating program product, and manufacturing method of semiconductor device
JP2011076124A (ja) * 2009-09-29 2011-04-14 Fujitsu Semiconductor Ltd 検証装置、検証方法及び検証プログラム
JP2012014489A (ja) * 2010-07-01 2012-01-19 Renesas Electronics Corp 半導体装置のレイアウト検証方法と装置及びプログラム

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7448012B1 (en) 2004-04-21 2008-11-04 Qi-De Qian Methods and system for improving integrated circuit layout
JP4528558B2 (ja) * 2004-05-28 2010-08-18 株式会社東芝 パターンのデータ作成方法、及びパターン検証手法
US7470492B2 (en) * 2004-10-29 2008-12-30 Intel Corporation Process window-based correction for photolithography masks
JP4713962B2 (ja) * 2005-06-27 2011-06-29 株式会社東芝 パターン作成方法及び半導体装置製造方法
JP4817746B2 (ja) * 2005-07-27 2011-11-16 株式会社東芝 半導体装置の設計データ処理方法、そのプログラム、及び半導体装置の製造方法
JP2007240949A (ja) * 2006-03-09 2007-09-20 Elpida Memory Inc マスクデータ作成方法及びマスク
JP2008175959A (ja) * 2007-01-17 2008-07-31 Toshiba Corp フォトマスク製造方法、及び半導体装置の製造方法
JP4745256B2 (ja) * 2007-01-26 2011-08-10 株式会社東芝 パターン作成方法、パターン作成・検証プログラム、および半導体装置の製造方法
JP4254871B2 (ja) * 2007-02-09 2009-04-15 ソニー株式会社 光近接効果補正方法、光近接効果補正装置、光近接効果補正プログラム、半導体装置の製造方法、パターン設計制約策定方法および光近接効果補正条件算出方法
US8099685B2 (en) * 2007-07-31 2012-01-17 Mentor Graphics Corporation Model based microdevice design layout correction
US20100023916A1 (en) * 2007-07-31 2010-01-28 Chew Marko P Model Based Hint Generation For Lithographic Friendly Design
US8146023B1 (en) * 2008-10-02 2012-03-27 Kla-Tenor Corporation Integrated circuit fabrication process convergence
JP2010164849A (ja) * 2009-01-16 2010-07-29 Toshiba Corp パターンデータ作成方法およびパターンデータ作成プログラム
CN102809899A (zh) * 2011-05-31 2012-12-05 无锡华润上华半导体有限公司 一种对位参数计算方法
JP2013045070A (ja) * 2011-08-26 2013-03-04 Toshiba Corp 原版評価方法、プログラム、および原版製造方法
US8486587B2 (en) 2011-12-20 2013-07-16 United Microelectronics Corp. Method for correcting layout pattern and method for manufacturing photomask
US8739078B2 (en) * 2012-01-18 2014-05-27 International Business Machines Corporation Near-neighbor trimming of dummy fill shapes with built-in optical proximity corrections for semiconductor applications
CN103576443B (zh) * 2012-08-03 2016-05-11 无锡华润上华半导体有限公司 一种光学临近矫正方法
US8977988B2 (en) 2013-04-09 2015-03-10 United Microelectronics Corp. Method of optical proximity correction for modifying line patterns and integrated circuits with line patterns modified by the same
US9454635B2 (en) * 2014-01-25 2016-09-27 Synopsys, Inc. Virtual layer generation during failure analysis
US10474781B2 (en) 2014-05-24 2019-11-12 Synopsys, Inc. Virtual hierarchical layer usage
TWI612373B (zh) * 2014-07-24 2018-01-21 聯華電子股份有限公司 光學鄰近修正驗證系統及其驗證方法
US10444622B2 (en) 2018-02-09 2019-10-15 United Microelectronics Corp. Method for generating masks for manufacturing of a semiconductor structure
CN112987485B (zh) * 2019-12-18 2023-03-21 中芯国际集成电路制造(北京)有限公司 掩膜版图形的修正方法、掩膜版和半导体结构的形成方法

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US641542A (en) * 1899-10-04 1900-01-16 Adrian De Piniec-Mallet Bedstead.
JP3328323B2 (ja) * 1992-07-20 2002-09-24 株式会社日立製作所 位相シフトマスクの製造方法および半導体集積回路装置の製造方法
US6470489B1 (en) 1997-09-17 2002-10-22 Numerical Technologies, Inc. Design rule checking system and method
US6316163B1 (en) * 1997-10-01 2001-11-13 Kabushiki Kaisha Toshiba Pattern forming method
JP3892205B2 (ja) 2000-04-14 2007-03-14 松下電器産業株式会社 レイアウトコンパクション方法
US6425113B1 (en) 2000-06-13 2002-07-23 Leigh C. Anderson Integrated verification and manufacturability tool
JP4077141B2 (ja) 2000-06-30 2008-04-16 株式会社東芝 デザインルール作成方法、デザインルール作成システム及び記録媒体
JP3914085B2 (ja) 2002-04-11 2007-05-16 株式会社東芝 プロセスパラメータの作成方法、プロセスパラメータの作成システム及び半導体装置の製造方法
TWI252516B (en) * 2002-03-12 2006-04-01 Toshiba Corp Determination method of process parameter and method for determining at least one of process parameter and design rule
US6745372B2 (en) 2002-04-05 2004-06-01 Numerical Technologies, Inc. Method and apparatus for facilitating process-compliant layout optimization
JP4190796B2 (ja) * 2002-04-24 2008-12-03 Ｎｅｃエレクトロニクス株式会社 露光原版の作成方法
US20050085085A1 (en) * 2003-10-17 2005-04-21 Yan Borodovsky Composite patterning with trenches
US20050088633A1 (en) * 2003-10-24 2005-04-28 Intel Corporation Composite optical lithography method for patterning lines of unequal width
US20060051680A1 (en) * 2004-09-03 2006-03-09 Tritchkov Alexander V Combining image imbalance compensation and optical proximity correction in designing phase shift masks

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7673258B2 (en) 2006-03-31 2010-03-02 Kabushiki Kaisha Toshiba Design data creating method, design data creating program product, and manufacturing method of semiconductor device
JP2011076124A (ja) * 2009-09-29 2011-04-14 Fujitsu Semiconductor Ltd 検証装置、検証方法及び検証プログラム
JP2012014489A (ja) * 2010-07-01 2012-01-19 Renesas Electronics Corp 半導体装置のレイアウト検証方法と装置及びプログラム

Also Published As

Publication number Publication date
CN1630032B (zh) 2010-05-12
US20050235245A1 (en) 2005-10-20
TWI256527B (en) 2006-06-11
TW200532398A (en) 2005-10-01
CN1630032A (zh) 2005-06-22
US7266801B2 (en) 2007-09-04

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