JP2005175028A - プラズマ処理方法およびプラズマ処理装置 - Google Patents

プラズマ処理方法およびプラズマ処理装置 Download PDF

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Publication number
JP2005175028A
JP2005175028A JP2003409764A JP2003409764A JP2005175028A JP 2005175028 A JP2005175028 A JP 2005175028A JP 2003409764 A JP2003409764 A JP 2003409764A JP 2003409764 A JP2003409764 A JP 2003409764A JP 2005175028 A JP2005175028 A JP 2005175028A
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JP
Japan
Prior art keywords
substrate
plasma
processing method
processing
processed
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Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP2003409764A
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English (en)
Japanese (ja)
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JP2005175028A5 (https=
Inventor
Shigenori Ishihara
繁紀 石原
Hirohisa Oda
博久 小田
Hisashi Nishimura
悠 西村
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Canon Inc
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Canon Inc
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Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP2003409764A priority Critical patent/JP2005175028A/ja
Priority to US11/002,903 priority patent/US20050136576A1/en
Publication of JP2005175028A publication Critical patent/JP2005175028A/ja
Publication of JP2005175028A5 publication Critical patent/JP2005175028A5/ja
Withdrawn legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0421—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/94—Hydrogenation or deuterisation, e.g. using atomic hydrogen from a plasma

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  • Plasma Technology (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
JP2003409764A 2003-12-09 2003-12-09 プラズマ処理方法およびプラズマ処理装置 Withdrawn JP2005175028A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2003409764A JP2005175028A (ja) 2003-12-09 2003-12-09 プラズマ処理方法およびプラズマ処理装置
US11/002,903 US20050136576A1 (en) 2003-12-09 2004-12-03 Plasma treatment method and plasma treatment apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2003409764A JP2005175028A (ja) 2003-12-09 2003-12-09 プラズマ処理方法およびプラズマ処理装置

Publications (2)

Publication Number Publication Date
JP2005175028A true JP2005175028A (ja) 2005-06-30
JP2005175028A5 JP2005175028A5 (https=) 2007-01-25

Family

ID=34674907

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2003409764A Withdrawn JP2005175028A (ja) 2003-12-09 2003-12-09 プラズマ処理方法およびプラズマ処理装置

Country Status (2)

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US (1) US20050136576A1 (https=)
JP (1) JP2005175028A (https=)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004140120A (ja) * 2002-10-16 2004-05-13 Canon Inc 多結晶シリコン基板
JP2004296598A (ja) * 2003-03-26 2004-10-21 Canon Inc 太陽電池
US7344996B1 (en) 2005-06-22 2008-03-18 Novellus Systems, Inc. Helium-based etch process in deposition-etch-deposition gap fill
US7476621B1 (en) 2003-12-10 2009-01-13 Novellus Systems, Inc. Halogen-free noble gas assisted H2 plasma etch process in deposition-etch-deposition gap fill
US7217658B1 (en) 2004-09-07 2007-05-15 Novellus Systems, Inc. Process modulation to prevent structure erosion during gap fill
US7381451B1 (en) 2004-11-17 2008-06-03 Novellus Systems, Inc. Strain engineering—HDP thin film with tensile stress for FEOL and other applications
US7211525B1 (en) * 2005-03-16 2007-05-01 Novellus Systems, Inc. Hydrogen treatment enhanced gap fill
US7482245B1 (en) 2006-06-20 2009-01-27 Novellus Systems, Inc. Stress profile modulation in STI gap fill
JP2008059991A (ja) * 2006-09-01 2008-03-13 Canon Inc プラズマ処理装置及びプラズマ処理方法
US8133797B2 (en) * 2008-05-16 2012-03-13 Novellus Systems, Inc. Protective layer to enable damage free gap fill
US8487440B2 (en) * 2010-07-09 2013-07-16 Infineon Technologies Ag Backside processing of semiconductor devices
US9553016B2 (en) 2010-07-09 2017-01-24 Infineon Technologies Ag Contacts for semiconductor devices and methods of forming thereof
US8664729B2 (en) 2011-12-14 2014-03-04 Taiwan Semiconductor Manufacturing Company, Ltd. Methods and apparatus for reduced gate resistance finFET

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5226967A (en) * 1992-05-14 1993-07-13 Lam Research Corporation Plasma apparatus including dielectric window for inducing a uniform electric field in a plasma chamber
US5711998A (en) * 1996-05-31 1998-01-27 Lam Research Corporation Method of polycrystalline silicon hydrogenation
US6153524A (en) * 1997-07-29 2000-11-28 Silicon Genesis Corporation Cluster tool method using plasma immersion ion implantation
ATE528421T1 (de) * 2000-11-30 2011-10-15 Univ North Carolina State Verfahren zur herstellung von gruppe-iii- metallnitrid-materialien
JP2002343993A (ja) * 2001-03-15 2002-11-29 Canon Inc 薄膜多結晶太陽電池及びその形成方法
DE10114764B4 (de) * 2001-03-26 2005-08-11 Infineon Technologies Ag Verfahren zur Herstellung eines integrierten Schaltkreises mit einer dynamischen Speicherzellen-Anordnung (DRAM) mit einer langen Retention-Time
JP4799748B2 (ja) * 2001-03-28 2011-10-26 忠弘 大見 マイクロ波プラズマプロセス装置、プラズマ着火方法、プラズマ形成方法及びプラズマプロセス方法
KR20040068990A (ko) * 2001-12-26 2004-08-02 동경 엘렉트론 주식회사 기판 처리 방법 및 반도체 장치의 제조 방법
JP2004128060A (ja) * 2002-09-30 2004-04-22 Canon Inc シリコン膜の成長方法、太陽電池の製造方法、半導体基板及び太陽電池
US20050066881A1 (en) * 2003-09-25 2005-03-31 Canon Kabushiki Kaisha Continuous production method for crystalline silicon and production apparatus for the same

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Publication number Publication date
US20050136576A1 (en) 2005-06-23

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