JP2005167291A - 太陽電池の製造方法及び半導体装置の製造方法 - Google Patents

太陽電池の製造方法及び半導体装置の製造方法 Download PDF

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Publication number
JP2005167291A
JP2005167291A JP2005069769A JP2005069769A JP2005167291A JP 2005167291 A JP2005167291 A JP 2005167291A JP 2005069769 A JP2005069769 A JP 2005069769A JP 2005069769 A JP2005069769 A JP 2005069769A JP 2005167291 A JP2005167291 A JP 2005167291A
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Japan
Prior art keywords
electrode
manufacturing
silicon
glass
solar cell
Prior art date
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Pending
Application number
JP2005069769A
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English (en)
Japanese (ja)
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JP2005167291A5 (enExample
Inventor
Satoshi Arimoto
智 有本
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
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Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP2005069769A priority Critical patent/JP2005167291A/ja
Publication of JP2005167291A publication Critical patent/JP2005167291A/ja
Publication of JP2005167291A5 publication Critical patent/JP2005167291A5/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/14—Photovoltaic cells having only PN homojunction potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/14—Photovoltaic cells having only PN homojunction potential barriers
    • H10F10/146—Back-junction photovoltaic cells, e.g. having interdigitated base-emitter regions on the back side
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/121—The active layers comprising only Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
    • H10F77/219—Arrangements for electrodes of back-contact photovoltaic cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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  • Photovoltaic Devices (AREA)
JP2005069769A 1996-12-20 2005-03-11 太陽電池の製造方法及び半導体装置の製造方法 Pending JP2005167291A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2005069769A JP2005167291A (ja) 1996-12-20 2005-03-11 太陽電池の製造方法及び半導体装置の製造方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP34159596 1996-12-20
JP2005069769A JP2005167291A (ja) 1996-12-20 2005-03-11 太陽電池の製造方法及び半導体装置の製造方法

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP14240697A Division JP3722326B2 (ja) 1996-12-20 1997-05-30 太陽電池の製造方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2006186806A Division JP4486622B2 (ja) 1996-12-20 2006-07-06 太陽電池の製造方法

Publications (2)

Publication Number Publication Date
JP2005167291A true JP2005167291A (ja) 2005-06-23
JP2005167291A5 JP2005167291A5 (enExample) 2006-05-25

Family

ID=34740859

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2005069769A Pending JP2005167291A (ja) 1996-12-20 2005-03-11 太陽電池の製造方法及び半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JP2005167291A (enExample)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014060430A (ja) * 2008-09-19 2014-04-03 Sunpower Corp 直接パターンによるピンホールフリーのマスク層を利用した太陽電池の製造方法
KR101542583B1 (ko) * 2009-05-28 2015-08-07 인텔렉츄얼 키스톤 테크놀로지 엘엘씨 태양 전지 및 그 제조 방법
CN106571402A (zh) * 2016-11-18 2017-04-19 吉林瑞能半导体有限公司 一种快恢复功率二极管及其制造方法
CN111048617A (zh) * 2019-11-29 2020-04-21 武汉华星光电技术有限公司 光电二极管及其制备方法
CN116885044A (zh) * 2023-08-01 2023-10-13 江苏润阳光伏科技有限公司 一种有效提升TOPCon电池组件功率的制备方法
CN116913575A (zh) * 2023-06-30 2023-10-20 浙江晶科能源有限公司 TOPCon电池银铝浆的添加剂、其制备方法及银铝浆

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014060430A (ja) * 2008-09-19 2014-04-03 Sunpower Corp 直接パターンによるピンホールフリーのマスク層を利用した太陽電池の製造方法
KR101542583B1 (ko) * 2009-05-28 2015-08-07 인텔렉츄얼 키스톤 테크놀로지 엘엘씨 태양 전지 및 그 제조 방법
CN106571402A (zh) * 2016-11-18 2017-04-19 吉林瑞能半导体有限公司 一种快恢复功率二极管及其制造方法
CN106571402B (zh) * 2016-11-18 2024-03-29 吉林瑞能半导体有限公司 一种快恢复功率二极管及其制造方法
CN111048617A (zh) * 2019-11-29 2020-04-21 武汉华星光电技术有限公司 光电二极管及其制备方法
CN111048617B (zh) * 2019-11-29 2021-06-01 武汉华星光电技术有限公司 光电二极管及其制备方法
CN116913575A (zh) * 2023-06-30 2023-10-20 浙江晶科能源有限公司 TOPCon电池银铝浆的添加剂、其制备方法及银铝浆
CN116885044A (zh) * 2023-08-01 2023-10-13 江苏润阳光伏科技有限公司 一种有效提升TOPCon电池组件功率的制备方法
CN116885044B (zh) * 2023-08-01 2024-04-19 江苏润阳光伏科技有限公司 一种有效提升TOPCon电池组件功率的制备方法

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