JP2005167291A5 - - Google Patents
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- Publication number
- JP2005167291A5 JP2005167291A5 JP2005069769A JP2005069769A JP2005167291A5 JP 2005167291 A5 JP2005167291 A5 JP 2005167291A5 JP 2005069769 A JP2005069769 A JP 2005069769A JP 2005069769 A JP2005069769 A JP 2005069769A JP 2005167291 A5 JP2005167291 A5 JP 2005167291A5
- Authority
- JP
- Japan
- Prior art keywords
- manufacturing
- semiconductor device
- insulating film
- oxide film
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
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- 239000004065 semiconductor Substances 0.000 claims 15
- 238000004519 manufacturing process Methods 0.000 claims 12
- 239000010410 layer Substances 0.000 claims 6
- 238000000034 method Methods 0.000 claims 6
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims 4
- 229910052581 Si3N4 Inorganic materials 0.000 claims 4
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims 4
- 239000000758 substrate Substances 0.000 claims 4
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims 3
- 239000011521 glass Substances 0.000 claims 3
- 239000000463 material Substances 0.000 claims 3
- 229910052751 metal Inorganic materials 0.000 claims 3
- 239000002184 metal Substances 0.000 claims 3
- 239000001301 oxygen Substances 0.000 claims 3
- 229910052760 oxygen Inorganic materials 0.000 claims 3
- 229910052814 silicon oxide Inorganic materials 0.000 claims 3
- 238000002230 thermal chemical vapour deposition Methods 0.000 claims 3
- DDFHBQSCUXNBSA-UHFFFAOYSA-N 5-(5-carboxythiophen-2-yl)thiophene-2-carboxylic acid Chemical compound S1C(C(=O)O)=CC=C1C1=CC=C(C(O)=O)S1 DDFHBQSCUXNBSA-UHFFFAOYSA-N 0.000 claims 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims 2
- 239000007864 aqueous solution Substances 0.000 claims 2
- 238000005268 plasma chemical vapour deposition Methods 0.000 claims 2
- 239000002356 single layer Substances 0.000 claims 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims 1
- 229910052796 boron Inorganic materials 0.000 claims 1
- 238000010304 firing Methods 0.000 claims 1
- 239000007789 gas Substances 0.000 claims 1
- 238000010438 heat treatment Methods 0.000 claims 1
- 239000001257 hydrogen Substances 0.000 claims 1
- 229910052739 hydrogen Inorganic materials 0.000 claims 1
- 239000011344 liquid material Substances 0.000 claims 1
- 238000002844 melting Methods 0.000 claims 1
- 230000008018 melting Effects 0.000 claims 1
- 229910052757 nitrogen Inorganic materials 0.000 claims 1
- 230000003647 oxidation Effects 0.000 claims 1
- 238000007254 oxidation reaction Methods 0.000 claims 1
- 230000000149 penetrating effect Effects 0.000 claims 1
- 229910052710 silicon Inorganic materials 0.000 claims 1
- 239000010703 silicon Substances 0.000 claims 1
- 239000010936 titanium Substances 0.000 claims 1
- 229910052719 titanium Inorganic materials 0.000 claims 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2005069769A JP2005167291A (ja) | 1996-12-20 | 2005-03-11 | 太陽電池の製造方法及び半導体装置の製造方法 |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP34159596 | 1996-12-20 | ||
| JP2005069769A JP2005167291A (ja) | 1996-12-20 | 2005-03-11 | 太陽電池の製造方法及び半導体装置の製造方法 |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP14240697A Division JP3722326B2 (ja) | 1996-12-20 | 1997-05-30 | 太陽電池の製造方法 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2006186806A Division JP4486622B2 (ja) | 1996-12-20 | 2006-07-06 | 太陽電池の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2005167291A JP2005167291A (ja) | 2005-06-23 |
| JP2005167291A5 true JP2005167291A5 (enExample) | 2006-05-25 |
Family
ID=34740859
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2005069769A Pending JP2005167291A (ja) | 1996-12-20 | 2005-03-11 | 太陽電池の製造方法及び半導体装置の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2005167291A (enExample) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20100071765A1 (en) * | 2008-09-19 | 2010-03-25 | Peter Cousins | Method for fabricating a solar cell using a direct-pattern pin-hole-free masking layer |
| KR101542583B1 (ko) * | 2009-05-28 | 2015-08-07 | 인텔렉츄얼 키스톤 테크놀로지 엘엘씨 | 태양 전지 및 그 제조 방법 |
| CN106571402B (zh) * | 2016-11-18 | 2024-03-29 | 吉林瑞能半导体有限公司 | 一种快恢复功率二极管及其制造方法 |
| CN111048617B (zh) * | 2019-11-29 | 2021-06-01 | 武汉华星光电技术有限公司 | 光电二极管及其制备方法 |
| CN116913575B (zh) * | 2023-06-30 | 2024-09-06 | 晶科能源(上饶)有限公司 | TOPCon电池银铝浆的添加剂、其制备方法及银铝浆 |
| CN116885044B (zh) * | 2023-08-01 | 2024-04-19 | 江苏润阳光伏科技有限公司 | 一种有效提升TOPCon电池组件功率的制备方法 |
-
2005
- 2005-03-11 JP JP2005069769A patent/JP2005167291A/ja active Pending
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