JP2005167206A - 化学機械平坦化後の処理剤として使用される界面活性剤を含有するプロセス溶液 - Google Patents
化学機械平坦化後の処理剤として使用される界面活性剤を含有するプロセス溶液 Download PDFInfo
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- JP2005167206A JP2005167206A JP2004305708A JP2004305708A JP2005167206A JP 2005167206 A JP2005167206 A JP 2005167206A JP 2004305708 A JP2004305708 A JP 2004305708A JP 2004305708 A JP2004305708 A JP 2004305708A JP 2005167206 A JP2005167206 A JP 2005167206A
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- process solution
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- surfactant
- alkyl group
- carbon atoms
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- 125000000217 alkyl group Chemical group 0.000 claims description 20
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
- H01L21/02068—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers
- H01L21/02074—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers the processing being a planarization of conductive layers
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- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D1/00—Detergent compositions based essentially on surface-active compounds; Use of these compounds as a detergent
- C11D1/02—Anionic compounds
- C11D1/04—Carboxylic acids or salts thereof
- C11D1/08—Polycarboxylic acids containing no nitrogen or sulfur
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- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D1/00—Detergent compositions based essentially on surface-active compounds; Use of these compounds as a detergent
- C11D1/38—Cationic compounds
- C11D1/40—Monoamines or polyamines; Salts thereof
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- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D1/00—Detergent compositions based essentially on surface-active compounds; Use of these compounds as a detergent
- C11D1/66—Non-ionic compounds
- C11D1/72—Ethers of polyoxyalkylene glycols
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- C—CHEMISTRY; METALLURGY
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- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/16—Organic compounds
- C11D3/164—Organic compounds containing a carbon-carbon triple bond
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- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
- C11D2111/10—Objects to be cleaned
- C11D2111/14—Hard surfaces
- C11D2111/22—Electronic devices, e.g. PCBs or semiconductors
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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Abstract
【解決手段】 1つ又は複数の界面活性剤を含むプロセス溶液を用いて半導体デバイスの製造における欠陥の数を低減する。いくつかの好ましい実施態様においては、本発明のプロセス溶液は、CMP処理の間又はその後にすすぎ溶液として用いた場合、欠陥を低減することができる。さらに、本発明のプロセス溶液を用いて、複数のCMP処理後の基材上にある欠陥の数を低減する方法が開示される。
【選択図】 なし
Description
2,4,7,9-テトラメチル-5-デシン-4,7-ジオール(m+n=5, p+q=2)(式II)から誘導された種々の量の界面活性剤を含有するプロセス溶液を以下のようにして調製した。種々の量の界面活性剤とDI水とをメスフラスコ内に装入して室温で100mlのレベルにした。界面活性剤が溶解するまで混合物を撹拌し、プロセス溶液を形成した。例1a, 1b及び1cのプロセス溶液中の界面活性剤量を表1に示す。
2,4,7,9-テトラメチル-5-デシン-4,7-ジオール(m+n=5, p+q=2)(式II、例2a)、2,4,7,9-テトラメチル-5-デシン-4,7-ジオール(m+n=10)(式I、例2b)、酒石酸ジイソペンチル(式V、例2c)から誘導された種々の界面活性剤から成るプロセス溶液を、例1a〜1cで記載したように調製した。プロセス溶液又は脱イオン水の測定量をウェハー上に、ウェハーを約1分間にわたって100rpmで連続的に回転させながら投与した。ウェハーを乾燥させた後、ウェハー表面上にプロセス溶液の液滴を投与し、種々の時間の間隔後に基材表面上のプロセス溶液の接触角を測定した。これらの測定値を表2に示す。
先の例2a, 2b及び2cで記載したようにプロセス溶液で基材を処理し、次いで、この基材を水浴中で60秒間にわたって浸漬した。低誘電率膜の表面上の水滴の接触角を測定し、これらの結果を表3に示す。
Claims (33)
- 半導体デバイスの製造中の欠陥を低減する方法であって、
基材の少なくとも一部が低誘電率膜を含むCMP処理後の基材を準備し;そして
該基材を、式(I)、(II)、(III)、(IVa)、(IVb)、(V)、(VI)又は(VII):
- 前記プロセス溶液が少なくとも1つの酸をさらに含む、請求項1に記載の方法。
- 前記プロセス溶液が少なくとも1つの塩基をさらに含む、請求項1に記載の方法。
- 前記プロセス溶液が少なくとも1つの酸化剤をさらに含む、請求項1に記載の方法。
- 前記プロセス溶液が少なくとも1つのキレート剤をさらに含む、請求項1に記載の方法。
- 前記プロセス溶液が少なくとも1つの防蝕剤をさらに含む、請求項1に記載の方法。
- 前記プロセス溶液が、安定剤、溶解助剤、着色剤、湿潤剤、消泡剤、緩衝剤、第2の界面活性剤、及びこれらの組み合わせから選択された添加剤をさらに含む、請求項1に記載の方法。
- 前記接触工程が動的すすぎを含む、請求項1に記載の方法。
- 前記プロセス溶液が、最大泡圧法に従って、23℃及び1気泡/秒で約45ダイン/cm2以下の動的表面張力を示す、請求項8に記載の方法。
- 前記プロセス溶液が、60秒を超える時点で実質的にゼロ個の泡を示す、請求項9に記載の方法。
- 半導体デバイスの製造中の欠陥を低減する方法であって、
基材の表面の少なくとも一部が低誘電率膜を含むCMP処理後の基材を準備し;
該基材を、少なくとも1つの溶剤と、式(I)、(II)、(III)、(IVa)、(IVb)、(V)、(VI)又は(VII):
該基材を脱イオン水のすすぎ液ですすぐことを含む、半導体デバイスの製造中の欠陥を低減する方法。 - 前記接触工程が動的すすぎを含む、請求項11に記載の方法。
- 前記接触工程が静的すすぎを含む、請求項11に記載の方法。
- 前記接触工程の前記基材表面が、前記脱イオン水のすすぎ液で濡れている、請求項11に記載の方法。
- 前記溶剤が水性溶剤を含む、請求項11に記載の方法。
- 前記溶剤が、前記水性溶剤中で混和性である非水性溶剤を含む、請求項15に記載の方法。
- 前記プロセス溶液が、前記溶剤に前記少なくとも1つの界面活性剤を10〜500,000ppm注入することにより形成される、請求項11に記載の方法。
- プロセス流が、前記基材表面上に前記少なくとも1つの界面活性剤を10〜500,000ppm適用すること、及び前記基材表面に前記溶剤を適用することにより形成される、請求項11に記載の方法。
- 前記プロセス流が、前記少なくとも1つの界面活性剤を含むカートリッジに前記溶剤を通すことにより形成される、請求項11に記載の方法。
- 前記プロセス流が、前記少なくとも1つの界面活性剤を前記少なくとも1つの溶剤で希釈することにより形成される、請求項11に記載の方法。
- 前記接触工程の時間が1〜200秒である、請求項11に記載の方法。
- 前記接触工程の時間が1〜150秒である、請求項21に記載の方法。
- 前記接触工程の時間が1〜40秒である、請求項22に記載の方法。
- 前記接触工程の少なくとも1つの温度が10〜100℃である、請求項11に記載の方法。
- 基材表面の少なくとも一部が低誘電率膜を含むCMP処理後の基材を処理するためのプロセス溶液であって、水性溶剤、非水性溶剤及びこれらの組み合わせから選択された少なくとも1つのキャリヤー媒質と、式(I)、(II)、(III)、(IVa)、(IVb)、(V)、(VI)又は(VII):
- 前記少なくとも1つのキャリヤー媒質が水性溶剤を含む、請求項25に記載のプロセス溶液。
- 前記少なくとも1つのキャリヤー媒質が非水性溶剤を含む、請求項25に記載のプロセス溶液。
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US10/689,402 US7208049B2 (en) | 2003-10-20 | 2003-10-20 | Process solutions containing surfactants used as post-chemical mechanical planarization treatment |
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JP2008189176A Division JP2009021609A (ja) | 2003-10-20 | 2008-07-22 | 化学機械平坦化後の処理剤として使用される界面活性剤を含有するプロセス溶液 |
JP2009024192A Division JP2009124170A (ja) | 2003-10-20 | 2009-02-04 | 化学機械平坦化後の処理剤として使用される界面活性剤を含有するプロセス溶液 |
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JP2008189176A Pending JP2009021609A (ja) | 2003-10-20 | 2008-07-22 | 化学機械平坦化後の処理剤として使用される界面活性剤を含有するプロセス溶液 |
JP2009024192A Pending JP2009124170A (ja) | 2003-10-20 | 2009-02-04 | 化学機械平坦化後の処理剤として使用される界面活性剤を含有するプロセス溶液 |
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JP2009024192A Pending JP2009124170A (ja) | 2003-10-20 | 2009-02-04 | 化学機械平坦化後の処理剤として使用される界面活性剤を含有するプロセス溶液 |
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US (2) | US7208049B2 (ja) |
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JP (3) | JP2005167206A (ja) |
TW (2) | TWI391484B (ja) |
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- 2004-10-20 JP JP2004305708A patent/JP2005167206A/ja not_active Withdrawn
-
2006
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JP2007269918A (ja) * | 2006-03-30 | 2007-10-18 | Fujifilm Corp | 半導体デバイス用基板の洗浄液及びそれを用いた洗浄方法 |
JP2009105299A (ja) * | 2007-10-05 | 2009-05-14 | Mitsubishi Chemicals Corp | 半導体デバイス用基板の洗浄液 |
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JP2012089862A (ja) * | 2008-07-03 | 2012-05-10 | Fujimi Inc | 半導体用濡れ剤、それを用いた研磨用組成物および研磨方法 |
JP2021536669A (ja) * | 2018-08-28 | 2021-12-27 | インテグリス・インコーポレーテッド | セリア粒子向けのcmp後洗浄用組成物 |
JP7212764B2 (ja) | 2018-08-28 | 2023-01-25 | インテグリス・インコーポレーテッド | セリア粒子向けのcmp後洗浄用組成物 |
JP2020107641A (ja) * | 2018-12-26 | 2020-07-09 | Jsr株式会社 | 半導体表面処理用組成物及び半導体表面の処理方法 |
Also Published As
Publication number | Publication date |
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JP2009021609A (ja) | 2009-01-29 |
JP2009124170A (ja) | 2009-06-04 |
US7208049B2 (en) | 2007-04-24 |
US20070006894A1 (en) | 2007-01-11 |
TW200916572A (en) | 2009-04-16 |
US7452426B2 (en) | 2008-11-18 |
TWI324178B (en) | 2010-05-01 |
TWI391484B (zh) | 2013-04-01 |
EP1530232A2 (en) | 2005-05-11 |
TW200514845A (en) | 2005-05-01 |
US20050081885A1 (en) | 2005-04-21 |
EP1530232A3 (en) | 2006-09-06 |
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