JP2005159033A - 膜形成用組成物およびその製造方法 - Google Patents

膜形成用組成物およびその製造方法 Download PDF

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Publication number
JP2005159033A
JP2005159033A JP2003396034A JP2003396034A JP2005159033A JP 2005159033 A JP2005159033 A JP 2005159033A JP 2003396034 A JP2003396034 A JP 2003396034A JP 2003396034 A JP2003396034 A JP 2003396034A JP 2005159033 A JP2005159033 A JP 2005159033A
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JP
Japan
Prior art keywords
film
group
general formula
oxygen
forming composition
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2003396034A
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English (en)
Japanese (ja)
Inventor
Masahiro Akiyama
将宏 秋山
Manabu Sekiguchi
学 関口
Seitaro Hattori
清太郎 服部
Terukazu Kokubo
輝一 小久保
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
JSR Corp
Original Assignee
JSR Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by JSR Corp filed Critical JSR Corp
Priority to JP2003396034A priority Critical patent/JP2005159033A/ja
Priority to US10/991,385 priority patent/US20050112386A1/en
Priority to TW93136081A priority patent/TWI308164B/zh
Priority to DE200460011308 priority patent/DE602004011308T2/de
Priority to EP20040028002 priority patent/EP1535976B1/de
Priority to KR1020040097442A priority patent/KR101153634B1/ko
Publication of JP2005159033A publication Critical patent/JP2005159033A/ja
Pending legal-status Critical Current

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D183/00—Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Coating compositions based on derivatives of such polymers
    • C09D183/02—Polysilicates
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D183/00—Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Coating compositions based on derivatives of such polymers
    • C09D183/04—Polysiloxanes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D7/00—Processes, other than flocking, specially adapted for applying liquids or other fluent materials to particular surfaces or for applying particular liquids or other fluent materials
    • B05D7/24—Processes, other than flocking, specially adapted for applying liquids or other fluent materials to particular surfaces or for applying particular liquids or other fluent materials for applying particular liquids or other fluent materials
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D183/00—Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Coating compositions based on derivatives of such polymers
    • C09D183/14—Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Coating compositions based on derivatives of such polymers in which at least two but not all the silicon atoms are connected by linkages other than oxygen atoms
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02118—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer carbon based polymeric organic or inorganic material, e.g. polyimides, poly cyclobutene or PVC
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
    • H01L21/02208—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
    • H01L21/02214—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and oxygen
    • H01L21/02216—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and oxygen the compound being a molecule comprising at least one silicon-oxygen bond and the compound having hydrogen or an organic group attached to the silicon or oxygen, e.g. a siloxane
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02282—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/312—Organic layers, e.g. photoresist
    • H01L21/3121—Layers comprising organo-silicon compounds
    • H01L21/3122—Layers comprising organo-silicon compounds layers comprising polysiloxane compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02203—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being porous
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/31504—Composite [nonstructural laminate]
    • Y10T428/31652—Of asbestos
    • Y10T428/31663—As siloxane, silicone or silane

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Wood Science & Technology (AREA)
  • General Physics & Mathematics (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Organic Chemistry (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Paints Or Removers (AREA)
  • Formation Of Insulating Films (AREA)
  • Silicon Polymers (AREA)
JP2003396034A 2003-11-26 2003-11-26 膜形成用組成物およびその製造方法 Pending JP2005159033A (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2003396034A JP2005159033A (ja) 2003-11-26 2003-11-26 膜形成用組成物およびその製造方法
US10/991,385 US20050112386A1 (en) 2003-11-26 2004-11-19 Composition for film formation, method for preparing the composition, and method for forming insulating film
TW93136081A TWI308164B (en) 2003-11-26 2004-11-24 Laminate, method for preparing the composition for film formation, and method for forming insulating film
DE200460011308 DE602004011308T2 (de) 2003-11-26 2004-11-25 Beschichtungszusammensetzung für die Filmherstellung, Verfahren zur Herstellung der Zusammensetzung und Verfahren zur Filmherstellung
EP20040028002 EP1535976B1 (de) 2003-11-26 2004-11-25 Beschichtungszusammensetzung für die Filmherstellung, Verfahren zur Herstellung der Zusammensetzung und Verfahren zur Filmherstellung
KR1020040097442A KR101153634B1 (ko) 2003-11-26 2004-11-25 막 형성용 조성물 및 그의 제조 방법

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2003396034A JP2005159033A (ja) 2003-11-26 2003-11-26 膜形成用組成物およびその製造方法

Publications (1)

Publication Number Publication Date
JP2005159033A true JP2005159033A (ja) 2005-06-16

Family

ID=34463807

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2003396034A Pending JP2005159033A (ja) 2003-11-26 2003-11-26 膜形成用組成物およびその製造方法

Country Status (6)

Country Link
US (1) US20050112386A1 (de)
EP (1) EP1535976B1 (de)
JP (1) JP2005159033A (de)
KR (1) KR101153634B1 (de)
DE (1) DE602004011308T2 (de)
TW (1) TWI308164B (de)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006143882A (ja) * 2004-11-19 2006-06-08 Asahi Denka Kogyo Kk ポリシロキサン及びその製造方法

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1679184A4 (de) * 2003-10-31 2009-02-18 Jsr Corp Laminat und verfahren zu dessen herstellung, isolierfilm, halbleitervorrichtung und zusammensetzung zur herstellung des films
KR100620991B1 (ko) * 2004-03-18 2006-09-08 엘지전자 주식회사 졸-겔 코팅용 조성물, 이의 제조방법 및 이를 이용하는표면 처리방법
KR100715187B1 (ko) * 2005-10-31 2007-05-07 주식회사 네패스 절연막 형성용 조성물 및 그 제조 방법
JP4616154B2 (ja) * 2005-11-14 2011-01-19 富士通株式会社 半導体装置の製造方法
EP1845132B8 (de) * 2006-04-11 2009-04-01 Shin-Etsu Chemical Co., Ltd. Siliziumhaltige, folienbildende Zusammensetzung, siliziumhaltige Folie, siliziumhaltiges, folientragendes Substrat und Strukturierungsverfahren
WO2008006060A1 (en) * 2006-07-07 2008-01-10 Drexel University Electrical insulation of devices with thin layers
DE102011080884A1 (de) * 2011-08-12 2013-02-14 Siemens Aktiengesellschaft Beschichtung mit hoher Koronabeständigkeit, sowie Herstellungsverfahren dazu
KR102116834B1 (ko) 2013-04-03 2020-05-29 주식회사 동진쎄미켐 비스-타입 실란화합물을 포함하는 코팅 조성물
KR101599953B1 (ko) 2013-08-08 2016-03-04 제일모직 주식회사 실리카계 절연층 형성용 조성물, 실리카계 절연층 및 실리카계 절연층의 제조방법
US20170358445A1 (en) 2016-06-13 2017-12-14 Gvd Corporation Methods for plasma depositing polymers comprising cyclic siloxanes and related compositions and articles
US11679412B2 (en) 2016-06-13 2023-06-20 Gvd Corporation Methods for plasma depositing polymers comprising cyclic siloxanes and related compositions and articles
KR102411904B1 (ko) * 2017-09-06 2022-06-21 한국전기연구원 알콜아민류 촉매를 이용한 졸-겔 실리카 입자 제조방법 및 실리카 입자가 코팅된 코팅기판 제조방법
CN111019516B (zh) * 2019-12-25 2021-08-27 湖南航天三丰科工有限公司 一种轻质自固化电力绝缘涂覆材料、制备方法及电力线

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4195773B2 (ja) * 2000-04-10 2008-12-10 Ｊｓｒ株式会社 層間絶縁膜形成用組成物、層間絶縁膜の形成方法およびシリカ系層間絶縁膜
US6413647B1 (en) * 2000-02-28 2002-07-02 Jsr Corporation Composition for film formation, method of film formation, and silica-based film
KR100661944B1 (ko) * 2000-05-22 2006-12-28 제이에스알 가부시끼가이샤 막 형성용 조성물, 막 형성용 조성물의 제조 방법, 막의형성 방법 및 실리카계 막
JP2002235037A (ja) * 2001-02-13 2002-08-23 Jsr Corp 膜形成用組成物の製造方法、膜形成用組成物、膜の形成方法およびシリカ系膜

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006143882A (ja) * 2004-11-19 2006-06-08 Asahi Denka Kogyo Kk ポリシロキサン及びその製造方法
JP4553693B2 (ja) * 2004-11-19 2010-09-29 株式会社Ａｄｅｋａ ポリシロキサンの製造方法

Also Published As

Publication number Publication date
US20050112386A1 (en) 2005-05-26
TWI308164B (en) 2009-04-01
KR20050050597A (ko) 2005-05-31
EP1535976B1 (de) 2008-01-16
DE602004011308T2 (de) 2009-01-22
EP1535976A1 (de) 2005-06-01
DE602004011308D1 (de) 2008-03-06
TW200528501A (en) 2005-09-01
KR101153634B1 (ko) 2012-06-18

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