DE602004011308D1 - Beschichtungszusammensetzung für die Filmherstellung, Verfahren zur Herstellung der Zusammensetzung und Verfahren zur Filmherstellung - Google Patents

Beschichtungszusammensetzung für die Filmherstellung, Verfahren zur Herstellung der Zusammensetzung und Verfahren zur Filmherstellung

Info

Publication number
DE602004011308D1
DE602004011308D1 DE200460011308 DE602004011308T DE602004011308D1 DE 602004011308 D1 DE602004011308 D1 DE 602004011308D1 DE 200460011308 DE200460011308 DE 200460011308 DE 602004011308 T DE602004011308 T DE 602004011308T DE 602004011308 D1 DE602004011308 D1 DE 602004011308D1
Authority
DE
Germany
Prior art keywords
film production
composition
preparation
coating composition
coating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
DE200460011308
Other languages
English (en)
Other versions
DE602004011308T2 (de
Inventor
Masahiro Akiyama
Manabu Sekiguchi
Seitaro Hattori
Terukazu Kokubo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
JSR Corp
Original Assignee
JSR Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by JSR Corp filed Critical JSR Corp
Publication of DE602004011308D1 publication Critical patent/DE602004011308D1/de
Application granted granted Critical
Publication of DE602004011308T2 publication Critical patent/DE602004011308T2/de
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D183/00—Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Coating compositions based on derivatives of such polymers
    • C09D183/02—Polysilicates
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D183/00—Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Coating compositions based on derivatives of such polymers
    • C09D183/04—Polysiloxanes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D7/00—Processes, other than flocking, specially adapted for applying liquids or other fluent materials to particular surfaces or for applying particular liquids or other fluent materials
    • B05D7/24—Processes, other than flocking, specially adapted for applying liquids or other fluent materials to particular surfaces or for applying particular liquids or other fluent materials for applying particular liquids or other fluent materials
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D183/00—Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Coating compositions based on derivatives of such polymers
    • C09D183/14—Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Coating compositions based on derivatives of such polymers in which at least two but not all the silicon atoms are connected by linkages other than oxygen atoms
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02118—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer carbon based polymeric organic or inorganic material, e.g. polyimides, poly cyclobutene or PVC
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
    • H01L21/02208—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
    • H01L21/02214—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and oxygen
    • H01L21/02216—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and oxygen the compound being a molecule comprising at least one silicon-oxygen bond and the compound having hydrogen or an organic group attached to the silicon or oxygen, e.g. a siloxane
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02282—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/312—Organic layers, e.g. photoresist
    • H01L21/3121—Layers comprising organo-silicon compounds
    • H01L21/3122—Layers comprising organo-silicon compounds layers comprising polysiloxane compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02203—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being porous
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/31504—Composite [nonstructural laminate]
    • Y10T428/31652—Of asbestos
    • Y10T428/31663—As siloxane, silicone or silane
DE200460011308 2003-11-26 2004-11-25 Beschichtungszusammensetzung für die Filmherstellung, Verfahren zur Herstellung der Zusammensetzung und Verfahren zur Filmherstellung Active DE602004011308T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2003396034A JP2005159033A (ja) 2003-11-26 2003-11-26 膜形成用組成物およびその製造方法
JP2003396034 2003-11-26

Publications (2)

Publication Number Publication Date
DE602004011308D1 true DE602004011308D1 (de) 2008-03-06
DE602004011308T2 DE602004011308T2 (de) 2009-01-22

Family

ID=34463807

Family Applications (1)

Application Number Title Priority Date Filing Date
DE200460011308 Active DE602004011308T2 (de) 2003-11-26 2004-11-25 Beschichtungszusammensetzung für die Filmherstellung, Verfahren zur Herstellung der Zusammensetzung und Verfahren zur Filmherstellung

Country Status (6)

Country Link
US (1) US20050112386A1 (de)
EP (1) EP1535976B1 (de)
JP (1) JP2005159033A (de)
KR (1) KR101153634B1 (de)
DE (1) DE602004011308T2 (de)
TW (1) TWI308164B (de)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20070001070A (ko) * 2003-10-31 2007-01-03 제이에스알 가부시끼가이샤 적층체 및 그의 형성 방법, 절연막, 반도체 장치, 및 막형성용 조성물
KR100620991B1 (ko) * 2004-03-18 2006-09-08 엘지전자 주식회사 졸-겔 코팅용 조성물, 이의 제조방법 및 이를 이용하는표면 처리방법
JP4553693B2 (ja) * 2004-11-19 2010-09-29 株式会社Ａｄｅｋａ ポリシロキサンの製造方法
KR100715187B1 (ko) * 2005-10-31 2007-05-07 주식회사 네패스 절연막 형성용 조성물 및 그 제조 방법
JP4616154B2 (ja) 2005-11-14 2011-01-19 富士通株式会社 半導体装置の製造方法
DE602007000498D1 (de) * 2006-04-11 2009-03-12 Shinetsu Chemical Co Siliziumhaltige, folienbildende Zusammensetzung, siliziumhaltige Folie, siliziumhaltiges, folientragendes Substrat und Strukturierungsverfahren
WO2008006060A1 (en) * 2006-07-07 2008-01-10 Drexel University Electrical insulation of devices with thin layers
DE102011080884A1 (de) * 2011-08-12 2013-02-14 Siemens Aktiengesellschaft Beschichtung mit hoher Koronabeständigkeit, sowie Herstellungsverfahren dazu
KR102116834B1 (ko) * 2013-04-03 2020-05-29 주식회사 동진쎄미켐 비스-타입 실란화합물을 포함하는 코팅 조성물
KR101599953B1 (ko) 2013-08-08 2016-03-04 제일모직 주식회사 실리카계 절연층 형성용 조성물, 실리카계 절연층 및 실리카계 절연층의 제조방법
US20170358445A1 (en) 2016-06-13 2017-12-14 Gvd Corporation Methods for plasma depositing polymers comprising cyclic siloxanes and related compositions and articles
US11679412B2 (en) 2016-06-13 2023-06-20 Gvd Corporation Methods for plasma depositing polymers comprising cyclic siloxanes and related compositions and articles
KR102411904B1 (ko) * 2017-09-06 2022-06-21 한국전기연구원 알콜아민류 촉매를 이용한 졸-겔 실리카 입자 제조방법 및 실리카 입자가 코팅된 코팅기판 제조방법
CN111019516B (zh) * 2019-12-25 2021-08-27 湖南航天三丰科工有限公司 一种轻质自固化电力绝缘涂覆材料、制备方法及电力线

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4195773B2 (ja) * 2000-04-10 2008-12-10 Ｊｓｒ株式会社 層間絶縁膜形成用組成物、層間絶縁膜の形成方法およびシリカ系層間絶縁膜
US6413647B1 (en) * 2000-02-28 2002-07-02 Jsr Corporation Composition for film formation, method of film formation, and silica-based film
US6503633B2 (en) * 2000-05-22 2003-01-07 Jsr Corporation Composition for film formation, process for producing composition for film formation, method of film formation, and silica-based film
JP2002235037A (ja) * 2001-02-13 2002-08-23 Jsr Corp 膜形成用組成物の製造方法、膜形成用組成物、膜の形成方法およびシリカ系膜

Also Published As

Publication number Publication date
US20050112386A1 (en) 2005-05-26
EP1535976A1 (de) 2005-06-01
JP2005159033A (ja) 2005-06-16
TWI308164B (en) 2009-04-01
TW200528501A (en) 2005-09-01
EP1535976B1 (de) 2008-01-16
DE602004011308T2 (de) 2009-01-22
KR20050050597A (ko) 2005-05-31
KR101153634B1 (ko) 2012-06-18

Similar Documents

Publication Publication Date Title
DE60117631D1 (de) Beschichtungszusammensetzung für die Filmherstellung, Verfahren zur Filmherstellung und Silica-Filme
DE502004001613D1 (de) Verfahren zur herstellung von polyamiden
DE602004010119D1 (de) Sicherung, die sicherung verwendender akkupack, und verfahren zur herstellung der sicherung
DE602004029247D1 (de) Verfahren zur herstellung eines olefinoxids
DE602004023921D1 (de) Neues verfahren zur herstellung vonroflumilast
DE602005016292D1 (de) Verfahren zur herstellung von glatiramer
DE50200540D1 (de) Verfahren zur Herstellung lösungsmittelfreier Suspensionen
DE60302682D1 (de) Verfahren zur Herstellung von Nanopartikeln
DE602004010234D1 (de) Verfahren zur herstellung von 4-aminodiphenylamin
DE502005007762D1 (de) Verfahren zur herstellung von zahnrädern
DE502006001472D1 (de) Verfahren zur kontinuierlichen Herstellung von hochviskosen vernetzbaren Siliconmassen
DE60314613D1 (de) Photochrome zusammensetzungen, verfahren zur herstellung und hergestellte oder beschichtete gegenstände
DE602004011308D1 (de) Beschichtungszusammensetzung für die Filmherstellung, Verfahren zur Herstellung der Zusammensetzung und Verfahren zur Filmherstellung
ATE384046T1 (de) Verfahren zur asymmetrischen hydrierung, das sich für die herstellung von cycloalkanindolderivaten eignet
DE602004005137D1 (de) Verfahren zur Herstellung von Nanopartikeln
DE502006004187D1 (de) Verfahren zur herstellung von diorganopolysiloxanen
DE602005014280D1 (de) Verfahren zur herstellung von ä1,4,5ü-oxadiazepinderivaten
DE502004005626D1 (de) Verfahren zur herstellung von organoacylphosphiten
DE50208108D1 (de) Verbessertes Verfahren zur Herstellung kernfluorierter Aromaten
DE602005004221D1 (de) Verfahren zur Herstellung von Faserformkörpern
DE602004016804D1 (de) Verfahren zur Herstellung von Zinkdialkyldithiophosphaten, die verbesserten Dichtungskompatabilitätseigenschaften aufweisen
DE502004001007D1 (de) Verfahren zur kontinuierlichen Herstellung von hochviskosen HTV-Siliconmassen
DE502004011882D1 (de) Verfahren zur herstellung cellulosischer formkörper
DE602005009070D1 (de) Prozess zur Herstellung von beschichteten Substraten
DE602005007417D1 (de) Verfahren zur Herstellung von eingebetteten Dünnschichtwiderständen

Legal Events

Date Code Title Description
8364 No opposition during term of opposition