JP2005158761A - 薄膜製造方法、半導体装置の製造方法、及び半導体装置 - Google Patents
薄膜製造方法、半導体装置の製造方法、及び半導体装置 Download PDFInfo
- Publication number
- JP2005158761A JP2005158761A JP2003390391A JP2003390391A JP2005158761A JP 2005158761 A JP2005158761 A JP 2005158761A JP 2003390391 A JP2003390391 A JP 2003390391A JP 2003390391 A JP2003390391 A JP 2003390391A JP 2005158761 A JP2005158761 A JP 2005158761A
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- Prior art keywords
- gas
- thin film
- film
- reactive gas
- vacuum chamber
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000010409 thin film Substances 0.000 title claims abstract description 54
- 238000004519 manufacturing process Methods 0.000 title claims description 29
- 239000004065 semiconductor Substances 0.000 title claims description 21
- 239000010408 film Substances 0.000 claims abstract description 116
- 239000003054 catalyst Substances 0.000 claims abstract description 33
- 238000000034 method Methods 0.000 claims abstract description 30
- 239000002994 raw material Substances 0.000 claims abstract description 22
- 239000007789 gas Substances 0.000 claims description 164
- 230000015572 biosynthetic process Effects 0.000 claims description 39
- 229910052751 metal Inorganic materials 0.000 claims description 27
- 239000002184 metal Substances 0.000 claims description 27
- 229910052739 hydrogen Inorganic materials 0.000 claims description 7
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims description 6
- 239000000126 substance Substances 0.000 claims description 4
- 125000002524 organometallic group Chemical group 0.000 claims description 2
- 230000004888 barrier function Effects 0.000 abstract description 12
- 239000000463 material Substances 0.000 abstract 2
- 239000010949 copper Substances 0.000 description 14
- 239000000758 substrate Substances 0.000 description 11
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 6
- 229910052799 carbon Inorganic materials 0.000 description 6
- 238000002230 thermal chemical vapour deposition Methods 0.000 description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 5
- 229910052802 copper Inorganic materials 0.000 description 5
- 230000007423 decrease Effects 0.000 description 5
- 239000001257 hydrogen Substances 0.000 description 5
- 150000002500 ions Chemical class 0.000 description 5
- 238000004140 cleaning Methods 0.000 description 4
- 238000001020 plasma etching Methods 0.000 description 4
- 238000006722 reduction reaction Methods 0.000 description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 3
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 description 2
- 239000005751 Copper oxide Substances 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 239000012159 carrier gas Substances 0.000 description 2
- 229910000431 copper oxide Inorganic materials 0.000 description 2
- 238000000354 decomposition reaction Methods 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- -1 hydrogen ions Chemical class 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000005587 bubbling Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 150000002222 fluorine compounds Chemical class 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000005596 ionic collisions Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 150000001247 metal acetylides Chemical class 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- 230000035484 reaction time Effects 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
Images
Landscapes
- Chemical Vapour Deposition (AREA)
- Electrodes Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Priority Applications (7)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2003390391A JP2005158761A (ja) | 2003-11-20 | 2003-11-20 | 薄膜製造方法、半導体装置の製造方法、及び半導体装置 |
| TW093132621A TW200524018A (en) | 2003-11-20 | 2004-10-27 | Method of cleaning surface of semiconductor substrate, method of manufacturing film, method of manufacturing semiconductor device and semiconductor device |
| KR1020040092234A KR101233525B1 (ko) | 2003-11-20 | 2004-11-12 | 반도체기판 표면의 클리닝 방법, 박막 제조방법,반도체장치의 제조방법 및 반도체장치 |
| US10/989,541 US20050118810A1 (en) | 2003-11-20 | 2004-11-17 | Method of cleaning surface of semiconductor substrate, method of manufacturing thin film, method of manufacturing semiconductor device, and semiconductor device |
| CN200810125094XA CN101330044B (zh) | 2003-11-20 | 2004-11-19 | 薄膜制造方法 |
| CN2004100957620A CN1638052B (zh) | 2003-11-20 | 2004-11-19 | 薄膜制造方法 |
| US11/710,918 US8216642B2 (en) | 2003-11-20 | 2007-02-27 | Method of manufacturing film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2003390391A JP2005158761A (ja) | 2003-11-20 | 2003-11-20 | 薄膜製造方法、半導体装置の製造方法、及び半導体装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2005158761A true JP2005158761A (ja) | 2005-06-16 |
| JP2005158761A5 JP2005158761A5 (enExample) | 2006-11-02 |
Family
ID=34717783
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2003390391A Pending JP2005158761A (ja) | 2003-11-20 | 2003-11-20 | 薄膜製造方法、半導体装置の製造方法、及び半導体装置 |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JP2005158761A (enExample) |
| CN (1) | CN101330044B (enExample) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2007123102A1 (ja) * | 2006-04-18 | 2007-11-01 | Ulvac, Inc. | 成膜装置、バリア膜製造方法 |
| JP2012184449A (ja) * | 2011-03-03 | 2012-09-27 | Taiyo Nippon Sanso Corp | 金属薄膜の製膜方法、金属薄膜、および金属薄膜の製膜装置 |
| JP2023516856A (ja) * | 2020-06-28 | 2023-04-21 | アプライド マテリアルズ インコーポレイテッド | ドープされたａｌｄ窒化タンタルにおける不純物の除去 |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9474163B2 (en) * | 2014-12-30 | 2016-10-18 | Asm Ip Holding B.V. | Germanium oxide pre-clean module and process |
| US10373850B2 (en) | 2015-03-11 | 2019-08-06 | Asm Ip Holding B.V. | Pre-clean chamber and process with substrate tray for changing substrate temperature |
| AT519217B1 (de) | 2016-10-04 | 2018-08-15 | Carboncompetence Gmbh | Vorrichtung und Verfahren zum Aufbringen einer Kohlenstoffschicht |
| CN111107949B (zh) * | 2017-12-18 | 2022-04-19 | 积水化学工业株式会社 | 表面处理方法和装置 |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3436776B2 (ja) * | 1993-08-09 | 2003-08-18 | 忠弘 大見 | ウエハ洗浄装置及び洗浄方法 |
| US6040010A (en) * | 1996-09-10 | 2000-03-21 | Micron Technology, Inc. | Catalytic breakdown of reactant gases in chemical vapor deposition |
| CN1313412A (zh) * | 2000-03-10 | 2001-09-19 | 广镓光电股份有限公司 | 在单晶基板上形成第三族氮化物外延层方法、制品及设备 |
-
2003
- 2003-11-20 JP JP2003390391A patent/JP2005158761A/ja active Pending
-
2004
- 2004-11-19 CN CN200810125094XA patent/CN101330044B/zh not_active Expired - Lifetime
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2007123102A1 (ja) * | 2006-04-18 | 2007-11-01 | Ulvac, Inc. | 成膜装置、バリア膜製造方法 |
| JPWO2007123102A1 (ja) * | 2006-04-18 | 2009-09-03 | 株式会社アルバック | 成膜装置、バリア膜製造方法 |
| US8309175B2 (en) | 2006-04-18 | 2012-11-13 | Ulvac, Inc. | Barrier film producing method for a semiconductor |
| JP2012184449A (ja) * | 2011-03-03 | 2012-09-27 | Taiyo Nippon Sanso Corp | 金属薄膜の製膜方法、金属薄膜、および金属薄膜の製膜装置 |
| JP2023516856A (ja) * | 2020-06-28 | 2023-04-21 | アプライド マテリアルズ インコーポレイテッド | ドープされたａｌｄ窒化タンタルにおける不純物の除去 |
| JP7476319B2 (ja) | 2020-06-28 | 2024-04-30 | アプライド マテリアルズ インコーポレイテッド | ドープされたａｌｄ窒化タンタルにおける不純物の除去 |
| JP2024133454A (ja) * | 2020-06-28 | 2024-10-02 | アプライド マテリアルズ インコーポレイテッド | ドープされたａｌｄ窒化タンタルにおける不純物の除去 |
| US12243774B2 (en) | 2020-06-28 | 2025-03-04 | Applied Materials, Inc. | Impurity removal in doped ALD tantalum nitride |
Also Published As
| Publication number | Publication date |
|---|---|
| CN101330044B (zh) | 2011-01-12 |
| CN101330044A (zh) | 2008-12-24 |
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