CN101330044B - 薄膜制造方法 - Google Patents

薄膜制造方法 Download PDF

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Publication number
CN101330044B
CN101330044B CN200810125094XA CN200810125094A CN101330044B CN 101330044 B CN101330044 B CN 101330044B CN 200810125094X A CN200810125094X A CN 200810125094XA CN 200810125094 A CN200810125094 A CN 200810125094A CN 101330044 B CN101330044 B CN 101330044B
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CN
China
Prior art keywords
gas
film
vacuum chamber
thin film
catalyst
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
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CN200810125094XA
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English (en)
Chinese (zh)
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CN101330044A (zh
Inventor
原田雅道
五户成史
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Ulvac Inc
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Ulvac Inc
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Priority claimed from JP2003401195A external-priority patent/JP2005166783A/ja
Application filed by Ulvac Inc filed Critical Ulvac Inc
Publication of CN101330044A publication Critical patent/CN101330044A/zh
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Publication of CN101330044B publication Critical patent/CN101330044B/zh
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  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
CN200810125094XA 2003-11-20 2004-11-19 薄膜制造方法 Expired - Lifetime CN101330044B (zh)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
JP2003-390391 2003-11-20
JP2003390391A JP2005158761A (ja) 2003-11-20 2003-11-20 薄膜製造方法、半導体装置の製造方法、及び半導体装置
JP2003390391 2003-11-20
JP2003401195A JP2005166783A (ja) 2003-12-01 2003-12-01 半導体基板表面のクリーニング方法
JP2003-401195 2003-12-01
JP2003401195 2003-12-01

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
CN2004100957620A Division CN1638052B (zh) 2003-11-20 2004-11-19 薄膜制造方法

Publications (2)

Publication Number Publication Date
CN101330044A CN101330044A (zh) 2008-12-24
CN101330044B true CN101330044B (zh) 2011-01-12

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Application Number Title Priority Date Filing Date
CN200810125094XA Expired - Lifetime CN101330044B (zh) 2003-11-20 2004-11-19 薄膜制造方法

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JP (1) JP2005158761A (enExample)
CN (1) CN101330044B (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2007123102A1 (ja) * 2006-04-18 2007-11-01 Ulvac, Inc. 成膜装置、バリア膜製造方法
JP6041464B2 (ja) * 2011-03-03 2016-12-07 大陽日酸株式会社 金属薄膜の製膜方法、および金属薄膜の製膜装置
US9474163B2 (en) * 2014-12-30 2016-10-18 Asm Ip Holding B.V. Germanium oxide pre-clean module and process
US10373850B2 (en) 2015-03-11 2019-08-06 Asm Ip Holding B.V. Pre-clean chamber and process with substrate tray for changing substrate temperature
AT519217B1 (de) 2016-10-04 2018-08-15 Carboncompetence Gmbh Vorrichtung und Verfahren zum Aufbringen einer Kohlenstoffschicht
CN111107949B (zh) * 2017-12-18 2022-04-19 积水化学工业株式会社 表面处理方法和装置
US11410881B2 (en) * 2020-06-28 2022-08-09 Applied Materials, Inc. Impurity removal in doped ALD tantalum nitride

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6003243A (en) * 1993-08-09 1999-12-21 Ohmi; Tadahiro Wafer cleaning apparatus and method thereof
CN1313412A (zh) * 2000-03-10 2001-09-19 广镓光电股份有限公司 在单晶基板上形成第三族氮化物外延层方法、制品及设备
US6306776B1 (en) * 1996-09-10 2001-10-23 Micron Technology, Inc. Catalytic breakdown of reactant gases in chemical vapor deposition

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6003243A (en) * 1993-08-09 1999-12-21 Ohmi; Tadahiro Wafer cleaning apparatus and method thereof
US6306776B1 (en) * 1996-09-10 2001-10-23 Micron Technology, Inc. Catalytic breakdown of reactant gases in chemical vapor deposition
CN1313412A (zh) * 2000-03-10 2001-09-19 广镓光电股份有限公司 在单晶基板上形成第三族氮化物外延层方法、制品及设备

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
JP特开2000-269163A 2000.09.29
JP特开平6-29245A 1994.02.04

Also Published As

Publication number Publication date
JP2005158761A (ja) 2005-06-16
CN101330044A (zh) 2008-12-24

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