JP2005157323A5 - - Google Patents
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- Publication number
- JP2005157323A5 JP2005157323A5 JP2004312433A JP2004312433A JP2005157323A5 JP 2005157323 A5 JP2005157323 A5 JP 2005157323A5 JP 2004312433 A JP2004312433 A JP 2004312433A JP 2004312433 A JP2004312433 A JP 2004312433A JP 2005157323 A5 JP2005157323 A5 JP 2005157323A5
- Authority
- JP
- Japan
- Prior art keywords
- display device
- layer
- manufacturing
- forming
- gate electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 claims 9
- 238000000034 method Methods 0.000 claims 9
- 239000004065 semiconductor Substances 0.000 claims 9
- 239000010408 film Substances 0.000 claims 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims 2
- 229910052581 Si3N4 Inorganic materials 0.000 claims 2
- 239000007769 metal material Substances 0.000 claims 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims 1
- 229910052804 chromium Inorganic materials 0.000 claims 1
- 239000011651 chromium Substances 0.000 claims 1
- 239000011370 conductive nanoparticle Substances 0.000 claims 1
- 238000005530 etching Methods 0.000 claims 1
- 229910052751 metal Inorganic materials 0.000 claims 1
- 239000002184 metal Substances 0.000 claims 1
- 229910052750 molybdenum Inorganic materials 0.000 claims 1
- 239000011733 molybdenum Substances 0.000 claims 1
- 229910052759 nickel Inorganic materials 0.000 claims 1
- 230000001590 oxidative effect Effects 0.000 claims 1
- 229910052814 silicon oxide Inorganic materials 0.000 claims 1
- 229910052715 tantalum Inorganic materials 0.000 claims 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims 1
- 239000010409 thin film Substances 0.000 claims 1
- 229910052719 titanium Inorganic materials 0.000 claims 1
- 239000010936 titanium Substances 0.000 claims 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims 1
- 229910052721 tungsten Inorganic materials 0.000 claims 1
- 239000010937 tungsten Substances 0.000 claims 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2004312433A JP4986391B2 (ja) | 2003-10-28 | 2004-10-27 | 表示装置の作製方法 |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2003368160 | 2003-10-28 | ||
| JP2003368160 | 2003-10-28 | ||
| JP2004312433A JP4986391B2 (ja) | 2003-10-28 | 2004-10-27 | 表示装置の作製方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2005157323A JP2005157323A (ja) | 2005-06-16 |
| JP2005157323A5 true JP2005157323A5 (enExample) | 2007-12-13 |
| JP4986391B2 JP4986391B2 (ja) | 2012-07-25 |
Family
ID=34741102
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2004312433A Expired - Fee Related JP4986391B2 (ja) | 2003-10-28 | 2004-10-27 | 表示装置の作製方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4986391B2 (enExample) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8900970B2 (en) * | 2006-04-28 | 2014-12-02 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing a semiconductor device using a flexible substrate |
| JP5616038B2 (ja) * | 2008-07-31 | 2014-10-29 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| US8603841B2 (en) * | 2010-08-27 | 2013-12-10 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing methods of semiconductor device and light-emitting display device |
| WO2015037686A1 (en) | 2013-09-13 | 2015-03-19 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| US10763249B2 (en) * | 2018-05-31 | 2020-09-01 | Sharp Kabushiki Kaisha | Image display device |
| CN114924436B (zh) * | 2022-05-17 | 2023-12-12 | 武汉华星光电技术有限公司 | 阵列基板及液晶显示面板 |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003080694A (ja) * | 2001-06-26 | 2003-03-19 | Seiko Epson Corp | 膜パターンの形成方法、膜パターン形成装置、導電膜配線、電気光学装置、電子機器、並びに非接触型カード媒体 |
| JP3980312B2 (ja) * | 2001-09-26 | 2007-09-26 | 株式会社日立製作所 | 液晶表示装置およびその製造方法 |
-
2004
- 2004-10-27 JP JP2004312433A patent/JP4986391B2/ja not_active Expired - Fee Related
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