JP4986391B2 - 表示装置の作製方法 - Google Patents

表示装置の作製方法 Download PDF

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Publication number
JP4986391B2
JP4986391B2 JP2004312433A JP2004312433A JP4986391B2 JP 4986391 B2 JP4986391 B2 JP 4986391B2 JP 2004312433 A JP2004312433 A JP 2004312433A JP 2004312433 A JP2004312433 A JP 2004312433A JP 4986391 B2 JP4986391 B2 JP 4986391B2
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Japan
Prior art keywords
layer
gate electrode
substrate
tft
electrode
Prior art date
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Expired - Fee Related
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JP2004312433A
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English (en)
Japanese (ja)
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JP2005157323A5 (enExample
JP2005157323A (ja
Inventor
舜平 山崎
慎志 前川
誠 古野
理 中村
馨太郎 今井
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to JP2004312433A priority Critical patent/JP4986391B2/ja
Publication of JP2005157323A publication Critical patent/JP2005157323A/ja
Publication of JP2005157323A5 publication Critical patent/JP2005157323A5/ja
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Publication of JP4986391B2 publication Critical patent/JP4986391B2/ja
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  • Thin Film Transistor (AREA)
  • Liquid Crystal (AREA)
  • Electroluminescent Light Sources (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP2004312433A 2003-10-28 2004-10-27 表示装置の作製方法 Expired - Fee Related JP4986391B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2004312433A JP4986391B2 (ja) 2003-10-28 2004-10-27 表示装置の作製方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2003368160 2003-10-28
JP2003368160 2003-10-28
JP2004312433A JP4986391B2 (ja) 2003-10-28 2004-10-27 表示装置の作製方法

Publications (3)

Publication Number Publication Date
JP2005157323A JP2005157323A (ja) 2005-06-16
JP2005157323A5 JP2005157323A5 (enExample) 2007-12-13
JP4986391B2 true JP4986391B2 (ja) 2012-07-25

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Family Applications (1)

Application Number Title Priority Date Filing Date
JP2004312433A Expired - Fee Related JP4986391B2 (ja) 2003-10-28 2004-10-27 表示装置の作製方法

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JP (1) JP4986391B2 (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8900970B2 (en) * 2006-04-28 2014-12-02 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing a semiconductor device using a flexible substrate
JP5616038B2 (ja) * 2008-07-31 2014-10-29 株式会社半導体エネルギー研究所 半導体装置の作製方法
US8603841B2 (en) * 2010-08-27 2013-12-10 Semiconductor Energy Laboratory Co., Ltd. Manufacturing methods of semiconductor device and light-emitting display device
WO2015037686A1 (en) 2013-09-13 2015-03-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US10763249B2 (en) * 2018-05-31 2020-09-01 Sharp Kabushiki Kaisha Image display device
CN114924436B (zh) * 2022-05-17 2023-12-12 武汉华星光电技术有限公司 阵列基板及液晶显示面板

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003080694A (ja) * 2001-06-26 2003-03-19 Seiko Epson Corp 膜パターンの形成方法、膜パターン形成装置、導電膜配線、電気光学装置、電子機器、並びに非接触型カード媒体
JP3980312B2 (ja) * 2001-09-26 2007-09-26 株式会社日立製作所 液晶表示装置およびその製造方法

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JP2005157323A (ja) 2005-06-16

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