JP2005142382A - 露光装置 - Google Patents

露光装置 Download PDF

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Publication number
JP2005142382A
JP2005142382A JP2003377657A JP2003377657A JP2005142382A JP 2005142382 A JP2005142382 A JP 2005142382A JP 2003377657 A JP2003377657 A JP 2003377657A JP 2003377657 A JP2003377657 A JP 2003377657A JP 2005142382 A JP2005142382 A JP 2005142382A
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JP
Japan
Prior art keywords
temperature
exposure apparatus
chamber
gradient control
controlling
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP2003377657A
Other languages
English (en)
Japanese (ja)
Other versions
JP2005142382A5 (enrdf_load_stackoverflow
Inventor
Shintaro Aichi
進太郎 愛知
Makoto Nomoto
誠 野元
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP2003377657A priority Critical patent/JP2005142382A/ja
Priority to US10/981,777 priority patent/US7317505B2/en
Publication of JP2005142382A publication Critical patent/JP2005142382A/ja
Publication of JP2005142382A5 publication Critical patent/JP2005142382A5/ja
Withdrawn legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
    • G03F7/70866—Environment aspects, e.g. pressure of beam-path gas, temperature of mask or workpiece
    • G03F7/70875—Temperature, e.g. temperature control of masks or workpieces via control of stage temperature
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
    • G03F7/70883—Environment aspects, e.g. pressure of beam-path gas, temperature of optical system
    • G03F7/70891—Temperature
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
    • G03F7/70933—Purge, e.g. exchanging fluid or gas to remove pollutants

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  • Health & Medical Sciences (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Atmospheric Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Environmental & Geological Engineering (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Toxicology (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP2003377657A 2003-11-07 2003-11-07 露光装置 Withdrawn JP2005142382A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2003377657A JP2005142382A (ja) 2003-11-07 2003-11-07 露光装置
US10/981,777 US7317505B2 (en) 2003-11-07 2004-11-05 Exposure apparatus and device manufacturing method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2003377657A JP2005142382A (ja) 2003-11-07 2003-11-07 露光装置

Publications (2)

Publication Number Publication Date
JP2005142382A true JP2005142382A (ja) 2005-06-02
JP2005142382A5 JP2005142382A5 (enrdf_load_stackoverflow) 2007-04-05

Family

ID=34587226

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2003377657A Withdrawn JP2005142382A (ja) 2003-11-07 2003-11-07 露光装置

Country Status (2)

Country Link
US (1) US7317505B2 (enrdf_load_stackoverflow)
JP (1) JP2005142382A (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008300702A (ja) * 2007-05-31 2008-12-11 Canon Inc 露光システムおよびデバイス製造方法

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005166961A (ja) * 2003-12-03 2005-06-23 Canon Inc 不活性ガスパージ方法、露光装置、デバイス製造方法、及びデバイス
JP4418724B2 (ja) * 2004-09-17 2010-02-24 キヤノン株式会社 露光装置
JP2006222165A (ja) * 2005-02-08 2006-08-24 Canon Inc 露光装置
JP4781049B2 (ja) * 2005-08-30 2011-09-28 キヤノン株式会社 露光装置およびデバイス製造方法
JP2007123295A (ja) * 2005-10-24 2007-05-17 Canon Inc 露光装置
JP2007142190A (ja) * 2005-11-18 2007-06-07 Canon Inc 露光装置及びデバイス製造方法
US8953148B2 (en) * 2005-12-28 2015-02-10 Nikon Corporation Exposure apparatus and making method thereof
EP1975980A4 (en) * 2005-12-28 2010-08-04 Nikon Corp EXPOSURE DEVICE AND MANUFACTURING METHOD THEREFOR
JP2007281142A (ja) * 2006-04-05 2007-10-25 Canon Inc 露光装置及び方法、並びに、デバイス製造方法
US7408728B2 (en) * 2006-12-04 2008-08-05 Quality Vision International, Inc. System and method for focal length stabilization using active temperature control
GB2446414A (en) * 2007-02-06 2008-08-13 Thorn Security A Detector
JP4490459B2 (ja) 2007-06-29 2010-06-23 キヤノン株式会社 露光装置及びデバイス製造方法
CN101276150B (zh) * 2008-03-21 2010-06-02 上海微电子装备有限公司 一种步进重复曝光装置
US20100033694A1 (en) * 2008-08-01 2010-02-11 Nikon Corporation Exposure method, exposure apparatus and device manufacturing method
KR101297242B1 (ko) * 2008-09-29 2013-08-16 엘지디스플레이 주식회사 액정표시장치용 냉각장치
CN107246919B (zh) * 2017-05-03 2019-08-23 华中光电技术研究所（中国船舶重工集团公司第七一七研究所） 一种制冷型红外探测器的控制系统及其制冷判定方法

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DD160756A3 (de) * 1981-04-24 1984-02-29 Gudrun Dietz Anordnung zur verbesserung fotochemischer umsetzungsprozesse in fotoresistschichten
JPS61160934A (ja) * 1985-01-10 1986-07-21 Canon Inc 投影光学装置
US4825247A (en) * 1987-02-16 1989-04-25 Canon Kabushiki Kaisha Projection exposure apparatus
JP3500619B2 (ja) * 1993-10-28 2004-02-23 株式会社ニコン 投影露光装置
US6545746B1 (en) * 1996-03-04 2003-04-08 Nikon Corporation Projection exposure apparatus
EP1041605A4 (en) * 1997-08-29 2005-09-21 Nikon Corp TEMPERATURE ADJUSTMENT FOR A DISPLAY DEVICE
KR20010031972A (ko) * 1997-11-12 2001-04-16 오노 시게오 노광 장치, 디바이스 제조 장치 및 노광 장치의 제조 방법
JP2000315640A (ja) 1999-04-28 2000-11-14 Canon Inc 半導体露光装置及びこれを用いたデバイス製造方法
WO2000074118A1 (fr) * 1999-05-27 2000-12-07 Nikon Corporation Systeme d'exposition, procede de dispositif de fabrication, et procede de traitement ecologique du systeme d'exposition
JP3869999B2 (ja) * 2000-03-30 2007-01-17 キヤノン株式会社 露光装置および半導体デバイス製造方法
JP2002158170A (ja) * 2000-09-08 2002-05-31 Nikon Corp 露光装置及びデバイス製造方法
JP2003014239A (ja) 2001-06-29 2003-01-15 Hitachi Hometec Ltd 加熱調理器
JP2004128213A (ja) * 2002-10-02 2004-04-22 Canon Inc 温調システム及びそれを組み込んだ露光装置

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008300702A (ja) * 2007-05-31 2008-12-11 Canon Inc 露光システムおよびデバイス製造方法
US7760325B2 (en) 2007-05-31 2010-07-20 Canon Kabushiki Kaisha Exposure system and method for manufacturing device
KR101037227B1 (ko) * 2007-05-31 2011-05-25 캐논 가부시끼가이샤 노광 시스템 및 디바이스 제조방법
TWI399619B (zh) * 2007-05-31 2013-06-21 Canon Kk 曝光系統及製造裝置的方法

Also Published As

Publication number Publication date
US20050110968A1 (en) 2005-05-26
US7317505B2 (en) 2008-01-08

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