JP2005136392A5

JP2005136392A5 -

Info

Publication number: JP2005136392A5
Application number: JP2004290571A
Authority: JP
Filing date: 2004-10-01
Publication date: 2006-03-02
Anticipated expiration: 2024-10-01

Claims

Possess the optical sensor device amplifier circuit,
The amplifier circuit includes a transistor,
The transistor comprises a thin film transistor having a semiconductor film having a crystal structure,
The photosensor element has a first electrode, a photoelectric conversion layer made of a semiconductor film having an amorphous structure on the first electrode, and a second electrode on the photoelectric conversion layer,
The semiconductor device is characterized in that the first electrode overlaps a part of the photoelectric conversion layer and is formed of the same material as a source electrode or a drain electrode of the thin film transistor .

Possess the optical sensor device amplifier circuit,
The amplifier circuit includes a transistor,
The transistor comprises a thin film transistor having a semiconductor film having a crystal structure,
The photosensor element has a first electrode, a photoelectric conversion layer made of a crystalline semiconductor film on the first electrode, and a second electrode on the photoelectric conversion layer,
The semiconductor device is characterized in that the first electrode overlaps a part of the photoelectric conversion layer and is formed of the same material as a source electrode or a drain electrode of the thin film transistor .

An optical sensor element and an amplifier circuit;
The amplifier circuit includes a transistor,
The transistor comprises a thin film transistor having a semiconductor film having a crystal structure,
The photosensor element has a first electrode, a photoelectric conversion layer made of a semiconductor film partially in contact with the first electrode and having an amorphous structure, and a second electrode on the photoelectric conversion layer. And
The semiconductor device is characterized in that the first electrode overlaps a part of the photoelectric conversion layer and is formed of the same material as a source electrode or a drain electrode of the thin film transistor.

An optical sensor element and an amplifier circuit;
The amplifier circuit includes a transistor,
The transistor comprises a thin film transistor having a semiconductor film having a crystal structure,
The photosensor element has a first electrode, a photoelectric conversion layer made of a crystalline semiconductor film partially in contact with the first electrode, and a second electrode on the photoelectric conversion layer,
The semiconductor device is characterized in that the first electrode overlaps a part of the photoelectric conversion layer and is formed of the same material as a source electrode or a drain electrode of the thin film transistor.

An optical sensor element and an amplifier circuit;
The amplifier circuit includes a transistor,
The transistor comprises a thin film transistor having a semiconductor film having a crystal structure,
The photosensor element includes a first electrode, a photoelectric conversion layer made of a semiconductor film having an amorphous structure formed so as to cover the first electrode, and a second electrode on the photoelectric conversion layer. Have
The semiconductor device is characterized in that the first electrode overlaps a part of the photoelectric conversion layer and is formed of the same material as a source electrode or a drain electrode of the thin film transistor.

An optical sensor element and an amplifier circuit;
The amplifier circuit includes a transistor,
The transistor comprises a thin film transistor having a semiconductor film having a crystal structure,
The photosensor element has a first electrode, a photoelectric conversion layer made of a crystalline semiconductor film formed to cover the first electrode, and a second electrode on the photoelectric conversion layer,
The semiconductor device is characterized in that the first electrode overlaps a part of the photoelectric conversion layer and is formed of the same material as a source electrode or a drain electrode of the thin film transistor.

In any one of Claims 1 thru | or 6,
The semiconductor device is an n-channel thin film transistor.

Possess the optical sensor device amplifier circuit,
The amplifier circuit includes a transistor,
The transistor includes an n-channel thin film transistor having a semiconductor film having a crystal structure,
The photosensor element has a first electrode, a p-type amorphous semiconductor layer partially in contact with the first electrode, and an amorphous structure in contact with the p-type amorphous semiconductor layer. A photoelectric conversion layer made of a semiconductor film, an n-type amorphous semiconductor layer in contact with the photoelectric conversion layer made of the semiconductor film having an amorphous structure, and a second contact in contact with the n-type amorphous semiconductor layer An electrode,
The semiconductor device is characterized in that the first electrode overlaps a part of the photoelectric conversion layer and is formed of the same material as a source electrode or a drain electrode of the thin film transistor .

Possess the optical sensor device amplifier circuit,
The amplifier circuit includes a transistor,
The transistor includes an n-channel thin film transistor having a semiconductor film having a crystal structure,
The photosensor element includes a first electrode, a p-type crystalline semiconductor layer partially in contact with the first electrode, and a semiconductor film having an amorphous structure in contact with the p-type crystalline semiconductor layer A photoelectric conversion layer comprising: an n-type crystalline semiconductor layer in contact with the photoelectric conversion layer comprising a semiconductor film having an amorphous structure; and a second electrode in contact with the n-type crystalline semiconductor layer. And
The semiconductor device is characterized in that the first electrode overlaps a part of the photoelectric conversion layer and is formed of the same material as a source electrode or a drain electrode of the thin film transistor .

Possess the optical sensor device amplifier circuit,
The amplifier circuit includes a transistor,
The transistor includes an n-channel thin film transistor having a semiconductor film having a crystal structure,
The photosensor element has a first electrode, a p-type amorphous semiconductor layer partially in contact with the first electrode, and an amorphous structure in contact with the p-type amorphous semiconductor layer. A photoelectric conversion layer made of a semiconductor film, an n-type crystalline semiconductor layer in contact with the photoelectric conversion layer made of a semiconductor film having an amorphous structure, and a second electrode in contact with the n-type crystalline semiconductor layer Have
The semiconductor device is characterized in that the first electrode overlaps a part of the photoelectric conversion layer and is formed of the same material as a source electrode or a drain electrode of the thin film transistor .

Possess the optical sensor device amplifier circuit,
The amplifier circuit includes a transistor,
The transistor includes an n-channel thin film transistor having a semiconductor film having a crystal structure,
The photosensor element includes a first electrode, a p-type crystalline semiconductor layer partially in contact with the first electrode, and a semiconductor film having an amorphous structure in contact with the p-type crystalline semiconductor layer A n-type amorphous semiconductor layer in contact with the photoelectric conversion layer comprising the semiconductor film having the amorphous structure, and a second electrode in contact with the n-type amorphous semiconductor layer. Have
The semiconductor device is characterized in that the first electrode overlaps a part of the photoelectric conversion layer and is formed of the same material as a source electrode or a drain electrode of the thin film transistor .

In any one of Claims 1 thru | or 11,
The light incident on the photoelectric conversion layer is incident from the first electrode side of the photoelectric conversion layer.

In any one of Claims 1 thru | or 12,
The semiconductor device, wherein the first electrode is made of a metal film.

In any one of Claims 1 thru | or 13,
The semiconductor device, wherein the second electrode is made of a metal film.

In any one of Claims 1 thru | or 13,
The semiconductor device, wherein the second electrode is made of a Ti film.

In any one of Claims 1 thru | or 15 ,
The optical sensor element and the amplifier circuit are provided on a plastic substrate via an adhesive layer.

In any one of Claims 1 thru | or 16 ,
External terminals and wherein a is 2 pin.

In any one of Claims 1 thru | or 17,
The amplifier circuit includes a current mirror circuit.

In any one of Claims 1 thru | or 17,
The amplifier circuit includes at least a first thin film transistor and a second thin film transistor,
One of the source and the drain of the first thin film transistor is electrically connected to one of the first electrode and the second electrode of the photosensor element,
The other of the source and the drain of the first thin film transistor is electrically connected to the first terminal electrode;
A gate electrode of the first thin film transistor is electrically connected to one of a source and a drain of the first thin film transistor and a gate electrode of the second thin film transistor;
One of a source and a drain of the second thin film transistor is electrically connected to the first terminal electrode;
The other of the source and the drain of the second thin film transistor is electrically connected to the second terminal electrode;
A semiconductor device, wherein the first electrode of the photosensor element or the other electrode of the second electrode is electrically connected to the second terminal electrode.

A video camera, a digital camera, a goggle-type display, a projector, a television, a navigation system, an audio playback device, a personal computer, a game machine, an image playback device, or portable information having the semiconductor device according to any one of claims 1 to 19. Terminal.