JPS63190379A - Color image sensor - Google Patents
Color image sensorInfo
- Publication number
- JPS63190379A JPS63190379A JP62027805A JP2780587A JPS63190379A JP S63190379 A JPS63190379 A JP S63190379A JP 62027805 A JP62027805 A JP 62027805A JP 2780587 A JP2780587 A JP 2780587A JP S63190379 A JPS63190379 A JP S63190379A
- Authority
- JP
- Japan
- Prior art keywords
- color filter
- image sensor
- photoelectric conversion
- color
- conversion element
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 claims abstract description 20
- 238000006243 chemical reaction Methods 0.000 claims abstract description 18
- 239000000049 pigment Substances 0.000 claims abstract description 5
- 238000000034 method Methods 0.000 abstract description 13
- 238000004806 packaging method and process Methods 0.000 abstract 2
- 238000009434 installation Methods 0.000 abstract 1
- 238000004519 manufacturing process Methods 0.000 abstract 1
- 239000010408 film Substances 0.000 description 21
- 229910021417 amorphous silicon Inorganic materials 0.000 description 6
- 238000004070 electrodeposition Methods 0.000 description 5
- 239000010453 quartz Substances 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 239000011229 interlayer Substances 0.000 description 4
- 239000010409 thin film Substances 0.000 description 4
- 108091006146 Channels Proteins 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- 108010010803 Gelatin Proteins 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229920000159 gelatin Polymers 0.000 description 2
- 239000008273 gelatin Substances 0.000 description 2
- 235000019322 gelatine Nutrition 0.000 description 2
- 235000011852 gelatine desserts Nutrition 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 239000002952 polymeric resin Substances 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 239000001054 red pigment Substances 0.000 description 2
- 238000007789 sealing Methods 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- 229920003002 synthetic resin Polymers 0.000 description 2
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- 108090000862 Ion Channels Proteins 0.000 description 1
- 102000004310 Ion Channels Human genes 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000002845 discoloration Methods 0.000 description 1
- 238000004043 dyeing Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 235000013372 meat Nutrition 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 239000000523 sample Substances 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02162—Coatings for devices characterised by at least one potential jump barrier or surface barrier for filtering or shielding light, e.g. multicolour filters for photodetectors
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Solid State Image Pick-Up Elements (AREA)
Abstract
Description
【発明の詳細な説明】 〔産業上の利用分野〕 本発明は、カラーイメージセンサに関するものである。[Detailed description of the invention] [Industrial application field] The present invention relates to a color image sensor.
一次元密着イメージセンサは、原稿と同一サイズのセン
サ長を持つので、ファクシミリやイメージスキャナの小
型化、低価格化に大きく寄与する。このため、近年、そ
の開発が活発化しており、第１６回置体素子やコンファ
レンス論文集（１９８４）ｐ、５５５に示すように、光
電変換素子と、これを駆動する走査回路とを同一の石英
基板上に集積化した密着イメージセンナがＤｆｌ 発、
実用化されている。Since the one-dimensional contact image sensor has a sensor length that is the same size as the document, it greatly contributes to miniaturization and cost reduction of facsimiles and image scanners. For this reason, their development has become active in recent years, and as shown in the 16th Annual Mounting Element and Conference Papers (1984) p. 555, photoelectric conversion elements and scanning circuits that drive them are made of the same quartz. A close-contact image sensor integrated on a substrate is developed by Dfl.
It has been put into practical use.
この密着イメージセンサには、第２図に示すような、能
動素子面（光電変換素子や駆動回路素子が集積されてい
る面）側から光が入射するタイプ（以降、トップタイプ
と呼ぶ）と、第１図に示すような、石英基板側から光が
入射するタイプ（以降、ボトムタイプと呼ぶ）とがある
。密着イメージセンサの光電変換素子面にカラーフィル
タを形成してフルカラー化を行う場合、トップタイプで
は第２図に示すようにカラーフィルタ３を光電変換索子
５土の透明導電膜４に直接接して形成することができる
。しかし、トップタイプでは、その構造上製品として実
装する際にガラス封止等の高価な実装形態をとらざるを
得す、コスト低下が難しかった。These contact image sensors include a type (hereinafter referred to as a top type) in which light enters from the active element surface (the surface where photoelectric conversion elements and drive circuit elements are integrated) as shown in Fig. 2; There is a type (hereinafter referred to as a bottom type) in which light enters from the quartz substrate side, as shown in FIG. When forming a color filter on the photoelectric conversion element surface of a contact image sensor to achieve full color, in the top type, the color filter 3 is directly contacted with the transparent conductive film 4 of the photoelectric conversion cable 5 as shown in FIG. can be formed. However, the top type has no choice but to use expensive mounting methods such as glass sealing when mounting it as a product due to its structure, making it difficult to reduce costs.
これに対しボトムタイプでは、石英基板側から光を入射
する形態であるため実装上のガラス封止等の高価・複雑
な工程は必要なく、トップタイプに比較すればコスト低
下は容易である。しかし、ボトムタイプをカラー化する
場合、第１図の破線で示す位置、即ち透明基板の裏面０
にカラーフィルタを形成することはできない。密着イメ
ージセンサの画素ピッチが１００μｍ以下であ□るのに
対し、石英基板２の厚みが１．２ｍｍあるので、第１図
の破線位置０にカラーフィルタを形成すると隣接画素と
の混色を起し、色ぼけが生ずるためである。このためボ
トムタイプでは第１図に示す如く、透明絶縁基板２と光
電変換素子５との間にカラーフィルタ３を形成する必要
がある。この位置にカラーフィルタを形成するためには
、カラーフィルタ形成後、最高２２０°Ｃの温度がかか
る工程を通るため、カラーフィルタの耐熱性は最底２５
０°Ｃは必要である。従来、固体撮像索子のカラーフィ
ルタに用いられてきた、透明ゼラチンを染料で染色して
作成するタイプのものは耐熱性がなく、第１図に示す位
置にカラーフィルタを形成することは不可能であった。On the other hand, in the bottom type, light enters from the quartz substrate side, so there is no need for expensive and complicated processes such as glass sealing for mounting, and costs can be easily reduced compared to the top type. However, when colorizing the bottom type, the position shown by the broken line in Figure 1, that is, the back side 0 of the transparent substrate.
It is not possible to form color filters on While the pixel pitch of a contact image sensor is 100 μm or less, the thickness of the quartz substrate 2 is 1.2 mm, so if a color filter is formed at position 0 of the broken line in Fig. 1, color mixing with adjacent pixels will occur. This is because color blurring occurs. For this reason, in the bottom type, it is necessary to form a color filter 3 between the transparent insulating substrate 2 and the photoelectric conversion element 5, as shown in FIG. In order to form a color filter at this location, after the color filter is formed, it goes through a process that requires temperatures of up to 220°C, so the heat resistance of the color filter is at the bottom 25°C.
0°C is necessary. Conventionally, the type of color filter that has been used for solid-state imaging probes, made by dyeing transparent gelatin with dye, is not heat resistant, making it impossible to form a color filter in the position shown in Figure 1. Met.
本発明は以上の問題点を解決するもので、その目的は、
−次元密着形イメージセンサに適切なカラーフィルタ、
及びその形成方法を提供することにある。The present invention solves the above problems, and its purpose is to:
- Color filter suitable for dimensional contact type image sensor,
An object of the present invention is to provide a method for forming the same.
本発明のカラーイメージセンサは、光電変換素子と、そ
れを駆動する走査回路とを透明絶縁基板上に集積化した
カラーイメージセンサにおいて、該光電変換素子と、該
透明絶縁基板との間にカラーフィルタを形成し、該カラ
ーフィルタに顔料を主成分とするカラーフィルタを用い
たことを特徴とする。The color image sensor of the present invention is a color image sensor in which a photoelectric conversion element and a scanning circuit for driving the same are integrated on a transparent insulating substrate, and a color filter is provided between the photoelectric conversion element and the transparent insulating substrate. The color filter is characterized in that a color filter containing pigment as a main component is used.
第１図に本発明のカラーイメージセンサの実施例を示す
。１が透明絶縁基板、２が層間絶縁膜、３がカラーフィ
ルタ、４が透明導電膜、５が光電変換素子、６が上部電
極、７が駆動回路を構成する薄膜トランジスタ（Ｔ、Ｆ
、Ｔ、）であり、第１図、第２図では簡単のためＴ、Ｆ
、Ｔを代表して１個だけ描いである。FIG. 1 shows an embodiment of the color image sensor of the present invention. 1 is a transparent insulating substrate, 2 is an interlayer insulating film, 3 is a color filter, 4 is a transparent conductive film, 5 is a photoelectric conversion element, 6 is an upper electrode, and 7 is a thin film transistor (T, F) constituting a drive circuit.
, T, ), and in Figures 1 and 2, T, F are used for simplicity.
, only one is drawn to represent T.
以下に実施例を工程を追いながら説明する。まず透明絶
縁基板１である石英基板上に、多結晶シリコン７０１を
Ｌ Ｐ ＣＶ Ｄ法で成膜し、フォトリングラフで所望
のＴ、Ｆ、Ｔ、バタンを作る。次にゲート絶縁膜７０２
をポリシリコン７０１の熱酸化で作る。この上にゲート
電極７０３となるポリシリコンをＬ Ｉ） ＣＶ Ｄで
成膜したあと、抵抗を下げる目的でリンを拡散させる。Examples will be explained below, following the steps. First, a film of polycrystalline silicon 701 is formed on a quartz substrate, which is a transparent insulating substrate 1, by the LPCCVD method, and desired T, F, T, and baton are formed using a photorin graph. Next, the gate insulating film 702
is made by thermal oxidation of polysilicon 701. After forming a polysilicon film to form the gate electrode 703 on this film by LI) CVD, phosphorus is diffused in order to lower the resistance.
ゲート電極のパタニングをし、ｐＮ ｎ各チャネルに応
じてマスキングをしてｎチャネルの場合はボロンを、ｎ
チャネルの場合はリンをイオン打込する。チャネル部を
形成後、マスクを除いて層間絶縁膜２のＮＳＧをＣＶ
Ｉ）法で成膜する。ここまでが主にＴ、Ｆ。Pattern the gate electrode and mask it according to each pN channel.
In the case of channels, ion implantation of phosphorus is performed. After forming the channel part, remove the mask and apply CV to the NSG of the interlayer insulating film 2.
I) A film is formed by method. Up to this point, it's mainly T and F.
Ｔ、７の形成工程である。以降は主に光電変換素子５の
形成工程となる。This is the formation process of T and 7. The subsequent steps mainly involve forming the photoelectric conversion element 5.
まず、カラーフィルタ８の形成工程を述べる。First, the process of forming the color filter 8 will be described.
第１図の層間絶縁膜−ヒにＩＴＯをスパッタで約１００
０〜２０００人成膜し、赤（Ｒ）・緑（Ｇ）・青（Ｂ）
の各バタンに応じてＩＴＯをパタニングし、電着電極８
を形成する。この１例を第３図に示す。第３図は能動素
子面側から見た図である。８１はＲフィルタ電着用電極
、８２はＧフィルタ電着用電極、８３はＢフィルタ電着
用電極であり、８４は電極電源印加部である。第３図で
は電着電極の一部だけを描いてあり、他の部分は省略し
である。この基板を赤顔料を高分子樹脂とともに溶液中
に分散させたもの（ミント−ケミトロン製）に対向電極
とともに浸し、電着電極８にプラス、対向電極にマイナ
スの電圧をかけると、マイナスの電荷をもつ赤顔料は電
着電極８上に集まる。適当な膜厚（１，５〜２．５μｍ
）になった時点で基板を−Ｌげ、水洗・乾燥ののち焼イ
」硬化させる。カラーフィルタの膜厚は電着時間を調整
することにより自由に制御できる。同様な方法によって
緑・青の各カラーフィルタも作る。顔料ツバインダーに
用いている高分子樹脂にはポリニスデル樹脂なので、以
上の工程で作製したカラーフィルタは耐熱性に優れ、大
気中２４０°Ｃ１時間の加熱しても劣化はない。Approximately 100% of ITO is sputtered onto the interlayer insulating film shown in Figure 1.
0 to 2000 people deposited red (R), green (G), blue (B)
The ITO is patterned according to each of the taps, and the electrodeposited electrode 8 is
form. An example of this is shown in FIG. FIG. 3 is a view seen from the active element side. 81 is an electrode for electrodeposition of the R filter, 82 is an electrode for electrodeposition of the G filter, 83 is an electrode for electrodeposition of the B filter, and 84 is an electrode power supply section. In FIG. 3, only a part of the electrodeposited electrode is depicted, and other parts are omitted. This substrate is immersed together with a counter electrode in a solution containing a red pigment and a polymer resin dispersed in a solution (manufactured by Mint-Chemitron), and when a positive voltage is applied to the electrodeposited electrode 8 and a negative voltage is applied to the counter electrode, a negative charge is generated. The red pigment collected on the electrodeposited electrode 8. Appropriate film thickness (1.5 to 2.5 μm
), remove the substrate, wash it with water, dry it, and then bake it to harden it. The film thickness of the color filter can be freely controlled by adjusting the electrodeposition time. Green and blue color filters are also made using the same method. Since the polymer resin used in the pigment Zbinder is polynisder resin, the color filter produced through the above process has excellent heat resistance and does not deteriorate even when heated in the atmosphere at 240°C for 1 hour.
このカラーフィルタ３上に、透明導電膜４となるＩＴＯ
を約２０００人スパッタし、ミート抵抗を下げるために
２２０＠ＣのＦＧアニールを１時間行なう。しかるのち
、カラーフィルタ３と同一のパクンで透明導電膜４をパ
タニングする。この」二に光電変換索子５を形成する。On this color filter 3, ITO which becomes the transparent conductive film 4 is placed.
Approximately 2,000 people were sputtered, and FG annealing was performed at 220 C for 1 hour to lower the meat resistance. Thereafter, the transparent conductive film 4 is patterned using the same patterns as the color filter 3. A photoelectric conversion cable 5 is formed on this second part.
光電変換素子にはプラズマＣＶＤ法で堆積した非晶質シ
リコンを用いた。非晶質シリコンの分光感度特性は人間
の眼の色感度にほぼ等しいので、非晶質シリコンはカラ
ーイメージセンサに好適である。非晶質シリコンの成膜
は、基板温度２００°Ｃで約３時間の工程である。非晶
質シリコンを成膜後、パタニングをし、薄膜トランジス
タ７の電極を取り出すためのコンタクトホールをあける
。コンタクトホール形成後、電極６となるＡρ−Ｓ ｊ
−Ｃｕ合金を約７０００人スパッタし、パタニングす
ることにより光電変換素子５と薄膜トランジスタ７の配
線とを同時に形成する。この後、能動素子面に保護膜の
ポリイミド膜（東し製、フォトニースなど）を塗布して
カラーイメージセンサチップが完成する。従来のゼラチ
ン染色フィルターは、前記ＩＴＯ成膜時のＦＧアニール
と前記非晶質シリコン成膜時の加熱とに耐えられず、退
色をおこして用いることができなかった。Amorphous silicon deposited by plasma CVD was used for the photoelectric conversion element. Since the spectral sensitivity characteristics of amorphous silicon are approximately equal to the color sensitivity of the human eye, amorphous silicon is suitable for color image sensors. Forming an amorphous silicon film is a process that takes about 3 hours at a substrate temperature of 200°C. After forming the amorphous silicon film, patterning is performed to make a contact hole for taking out the electrode of the thin film transistor 7. After forming the contact hole, Aρ-S j becomes the electrode 6
The photoelectric conversion element 5 and the wiring of the thin film transistor 7 are simultaneously formed by sputtering and patterning -Cu alloy. Thereafter, a protective polyimide film (manufactured by Toshi Co., Ltd., Photonice, etc.) is applied to the active element surface to complete the color image sensor chip. Conventional gelatin dyed filters could not withstand the FG annealing during the ITO film formation and the heating during the amorphous silicon film formation, causing discoloration and could not be used.
これに対し、顔料を主成分表するカラーフィルタは十分
な耐熱性があるため、第１図に示すような構造が可能に
なった。On the other hand, color filters whose main components are pigments have sufficient heat resistance, making the structure shown in FIG. 1 possible.
本発明のカラーイメージセンサによれば、透明ｕ板側か
ら光を入射するタイプのイメージセンナでは従来不可能
だったカラーフィルタのｏ ｎ −ｃｈｉｐ化が可能と
なり、製品として実装する際の実装形態を大幅に簡略化
するととが可能になった。このため、本発明はカラーイ
メージセンサの実装歩留りを向上させ、コスト低減に多
大の効果を有する。According to the color image sensor of the present invention, it is possible to use an on-chip color filter, which was previously impossible with a type of image sensor that enters light from the transparent U board side, and it is possible to change the mounting form when mounting it as a product. It has become possible to significantly simplify this. Therefore, the present invention has great effects in improving the mounting yield of color image sensors and reducing costs.
第１図は本発明のカラーイメージセンナの断面図。 第２図は従来のカラーイメージセンサの断面図。 第３図は電着電極のレイアウト図。 ０は仮想のカラーフィルタ位置 １は透明絶縁基板 ２は層間絶縁膜 ３はカラーフィルタ ４は透明導電膜 ５は光電変換素子 ６は電極 ７は薄膜トランジスタ（Ｔ、Ｆ、Ｔ、）８は電着電極 ７０１はＴ、Ｉ”、Ｔ、チャネル部 ７０２はゲート絶縁膜 ７０３はゲート電極 以 上 第１図 FIG. 1 is a sectional view of the color image sensor of the present invention. FIG. 2 is a cross-sectional view of a conventional color image sensor. Figure 3 is a layout diagram of electrodeposited electrodes. 0 is the virtual color filter position 1 is a transparent insulating substrate 2 is an interlayer insulating film 3 is a color filter 4 is a transparent conductive film 5 is a photoelectric conversion element 6 is the electrode 7 is a thin film transistor (T, F, T,) 8 is an electrodeposition electrode 701 is T, I”, T, channel part 702 is a gate insulating film 703 is a gate electrode that's all Figure 1
Claims (2)
明絶縁基板上に集積化したカラーイメージセンサにおい
て、該光電変換素子と、該透明絶縁基板の間にカラーフ
ィルタを形成したことを特徴とするカラーイメージセン
サ。(1) A color image sensor in which a photoelectric conversion element and a scanning circuit for driving the same are integrated on a transparent insulating substrate, characterized in that a color filter is formed between the photoelectric conversion element and the transparent insulating substrate. Color image sensor.
フィルタを用いたことを特徴とする特許請求の範囲第１
項記載のカラーイメージセンサ。(2) Claim 1, characterized in that the color filter is a color filter whose main component is a pigment.
Color image sensor described in section.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP20650886 | 1986-09-02 | ||
| JP61-206508 | 1986-09-02 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63190379A true JPS63190379A (en) | 1988-08-05 |
Family
ID=16524529
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62027805A Pending JPS63190379A (en) | 1986-09-02 | 1987-02-09 | Color image sensor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63190379A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005136392A (en) * | 2003-10-06 | 2005-05-26 | Semiconductor Energy Lab Co Ltd | Semiconductor device and its manufacturing method |
-
1987
- 1987-02-09 JP JP62027805A patent/JPS63190379A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005136392A (en) * | 2003-10-06 | 2005-05-26 | Semiconductor Energy Lab Co Ltd | Semiconductor device and its manufacturing method |
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