JPH0513736A - Color solid-state image pickup device - Google Patents

Abstract

PURPOSE:To obtain a high quality color solid-state image pickup device having a required spectral characteristic by installing a colored resin layer to a light receiving section in a color solid-state image pickup device having a light receiving section which is provided with a photoelectric transfer function on a semiconductor board and a color filter which meets said light receiving section. CONSTITUTION:There are formed a light receiving section 2, first and second polysilicon electrodes 3 and 4, an oxide silicon insulation layer 5, a metal light shielding film 6 and a flattened film 7 on the surface of a semiconductor board 1. After their formation, a precolored resin layer 11 is formed on the flattened layer 7 based can a spin coat method. The colored resin 11 is obtained by mixing a pigment with acrylic resin, epoxy resin or polyimide resin. Then, there are installed color filters 8R, 8G and 8B where a protection film 9 and a micro lens 10 are installed on the top. It is, therefore, possible to obtain a required spectral characteristic by changing the film thickness of pre-colered resin or a pigment material.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a color solid-state image pickup device.

[0002]

2. Description of the Related Art In general, a color solid-state image pickup device decomposes light incident through an optical system of a camera into red, green, blue, or their complementary colors, and in a light receiving portion having a photoelectric conversion function, The optical signal is converted into an electrical signal and taken out.

FIG. 2 is a sectional view of a conventional color solid-state image pickup device. 1 is a semiconductor substrate, 2 is a light receiving portion, 3 is a first polysilicon electrode, 4 is a second polysilicon electrode, 5 is a silicon oxide insulating layer, 6 is a metal light-shielding film, 7 is a flattening film, 8
R, 8G, and 8B are red, green, and blue color filters, 9 is a protective film, and 10 is a microlens.

The light receiving portion 2 is provided on the surface of the semiconductor substrate 1, and the first and second layer polysilicon electrodes 3 and 4 transfer clocks of electric signals photoelectrically converted by the light receiving portion 2. It is for transfer by pulse. In addition, color filters 8R and 8R are formed on the metal light-shielding film 6.
In order to flatten the base for forming G and 8B, the flattening film 7 is formed, and the color filters 8R, 8G, and 8B are formed on the flattening film 7 so as to correspond to the respective light receiving portions 2. As the material of the color filters 8R, 8G, 8B,
For example, a water-soluble resist obtained by adding a dichromate to a protein such as gelatin or casein is used. The resist is patterned into a desired shape and dyed with a red dye, a color filter 8R, a dye dyed with a green dye, a color filter 8G, and a dye dyed with a blue dye, a color filter 8B. .. Then, a protective film 9 is formed on the color filters 8R, 8G, and 8B to increase the amount of light incident on the light receiving section 2 and to increase the sensitivity of the solid-state image sensor, and a microlens 10 is provided on the protective film 9. Form. The method for producing the microlens includes, for example,
A semi-spherical microlens 10 is formed by applying a transparent resist having photosensitivity, heating after patterning, and melting.

[0005]

In the above-mentioned conventional color solid-state image pickup device, the spectral characteristic is controlled only by the color separation color filter formed on each light receiving portion. However, originally, the spectral characteristic of the color solid-state image pickup device is determined by both the output sensitivity characteristic of the monochrome solid-state image pickup device without the color filter shown in FIG. 3 and the spectral characteristic of the color filter shown in FIG. FIG. 5 shows the output sensitivity characteristics of a conventional color solid-state image sensor. For example, when light in a certain wavelength region is reduced or light in a certain wavelength region is emphasized in order to obtain a desired spectral characteristic, until now, when dyeing, an appropriate dye, that is, red, green, and blue are the same. There was no dye that could reduce light by the same amount in the wavelength range. An object of the present invention is to provide a high quality color solid-state image pickup device having desired spectral characteristics.

[0006]

A color solid-state image pickup device of the present invention is a color solid-state image pickup device having a light receiving portion having a photoelectric conversion function on a semiconductor substrate and a color filter corresponding to the light receiving portion. A colored resin layer is provided on the part.

[0007]

Using the present invention, for example, an acrylic resin layer colored so as to absorb light of 400 nm has a film thickness of 0.5.
In the case of forming the film having a thickness of .mu.m, as shown in the output sensitivity characteristic of the color solid-state image sensor of FIG.

[0008]

The present invention will be described in detail below based on an example.

FIG. 1 is a structural sectional view of an embodiment of the present invention. 1 is a semiconductor substrate, 2 is a light receiving portion, 3 is a first polysilicon electrode, 4 is a second polysilicon electrode, 5 is a silicon oxide insulating layer, 6 is a metal light-shielding film, 7 is a flattening film, 8R, 8
G and 8B are red, green and blue color filters,
9 is a protective film, 10 is a microlens, and 11 is a colored resin layer. The colored resin layer 11 is provided between the flattening film 7 and the color filters 8R, 8G, 8B.

Next, the manufacturing process will be described.

According to the conventional technique, on the surface of the semiconductor substrate 1,
The light receiving portion 2, the first and second polysilicon electrodes 3 and 4, the silicon oxide insulating layer 5, the metal light shielding film 6, and the flattening film 7 are formed. Then, the colored resin layer 11 is formed on the flattening film 7 by using a spin coating method. The coloring resin is colored by mixing a pigment with an acrylic resin, an epoxy resin, or a polyimide resin. Then, the color filters 8R, 8G, and 8B are provided by the conventional technique, and the protective film 9 and the microlens 10 are provided on the color filters 8R, 8G, and 8B.

In the above embodiment, the colored resin layer 11
Is provided between the flattening film 7 and the color filters 8R, 8G, 8B, the colored resin layer 11 may be provided on the light receiving portion 2, and the color filters 8R, 8G,
It is also possible to provide it between 8B and the protective film 9 or the like. The desired spectral characteristics can be obtained by changing the film thickness of the colored resin or the colored material.

[0013]

As described above in detail, by using the present invention, it is possible to obtain a high quality color solid-state image pickup device having desired spectral characteristics.

[Brief description of drawings]

FIG. 1 is a structural cross-sectional view of a color solid-state image sensor according to an embodiment of the present invention.

FIG. 2 is a structural cross-sectional view of a conventional color solid-state image sensor.

FIG. 3 is a diagram showing output sensitivity characteristics in a monochrome solid-state image sensor.

FIG. 4 is a diagram showing spectral characteristics of a color filter.

FIG. 5 is a diagram showing an output sensitivity characteristic of a conventional color solid-state image sensor.

FIG. 6 is a diagram showing the output sensitivity characteristics of the color solid-state imaging device of the present invention.

[Explanation of symbols]

 1 semiconductor substrate 2 light receiving part 3 first polysilicon electrode 4 second polysilicon electrode 5 silicon oxide insulating layer 6 metal light-shielding film 7 planarizing film 8R red color filter 8G green color filter 8B blue color filter 9 protective film 10 microlens 11 Colored resin layer

 ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Kei Higashi, 22-22 Nagaike-cho, Abeno-ku, Osaka

Claims (1)

Claim: What is claimed is: 1. A color solid-state imaging device having a light receiving portion having a photoelectric conversion function and a color filter corresponding to the light receiving portion on a semiconductor substrate, wherein a colored resin layer is provided on the light receiving portion. A color solid-state image pickup device comprising: