JPS63122166A - Solid-state image pickup device - Google Patents

Abstract

PURPOSE:To enhance the signal-to-noise ratio of a read-out signal by a method wherein an influence by external electromagnetic waves and another influence by the irregularity of stray capacitance value due to an uneven mold material are shielded by an electric-conductive layer which is formed on a passivating layer. CONSTITUTION:A solid-state image pickup device contains an electric-conductive layer 113 which is formed on passivating layers 111 and 112 and is composed of one of the following: a metal; an ITO; tin oxide; and an electric-conductive resin material. The first layer 111 is composed of an inorganic insulating material, and the second layer 112 is composed of an organic insulating material. The electric-conductive layer 113 for shielding use is connected to a grounding part 109 located on a wiring part through an electric-conductive resin material 121. A mold layer 114 is intended for protection of a device and for improvement of its optical characteristic.

Description

DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a solid-state imaging device used for image reading in scanners, facsimiles, and the like.

[Conventional technology]

In a conventional solid-state imaging device in which a plurality of photoelectric conversion elements are formed on an insulating substrate, a shielding layer is not provided, and as shown in FIG. Grounding part 226 on the mounting board for fixing the insulating board
etc., but sufficient shielding measures are not taken into consideration for each individual element.

[Invention h; Problem to be solved]

However, in the conventional technology, the substrate b is an insulator,
The shielding for each element is insufficient, making it extremely susceptible to external electromagnetic waves. The current for reading λ by the photoelectric conversion element is very small and is easily affected by it. A mold is applied on the carbon layer, but it is difficult to apply the mold uniformly due to the manufacturing process, and the variation in dielectric constant h is much larger than that of a passivation layer.As a result, stray capacitance to elements and wiring, etc. This tends to cause variations in the pattern, which causes fixed pattern noise.

Therefore, the present invention is intended to solve these problems, and improves the S/N of the read signal by shielding the influence of external electromagnetic waves and the influence of variations in stray capacitance due to non-uniformity of molding agent. The purpose is to

Means for Solving Problem C] The solid-state imaging device of the present invention has a conductive layer 113 made of any one of metal, Tonium oxide, tin oxide, and conductive resin on the page word layers 111 and 112. Features.

〔Example〕

FIG. 1 is an example of a sectional view of a solid-state imaging device in which light is incident from the insulating transparent substrate side according to an embodiment of the present invention.

In FIG. 1, 101 is an insulating transparent substrate, 102 is a polycrystalline silicon (poly-Bi) layer, and 103#-t
Gate insulating film, 104 gate voltage, 102 to 104
constitutes a TPT (thin film transistor), and the TIF
Drive circuits such as shift registers and analog switches are formed on the insulating transparent substrate by T.

105 is an insulating film between the eyebrows, 106 is a lower transparent electrode of a charge conversion element, and 107 is a photoconductive layer made of an amorphous semiconductor. , 108 are wiring parts for the upper mold 1 and the drive circuit, and are made of the same material. They are 111 and 112 dimensional spacing layers, a 111 th layer is made of an inorganic insulating material, and a 112 th layer is a second layer made of an organic insulating material.

Reference numeral 113 denotes a conductive layer for shielding, which is connected to the ground portion 109 on the wiring via a conductive resin 121.

This is a mold layer for protecting the 114 elements and improving optical characteristics.

If the conductive layer is metal, the grounding part on the wiring and the conductive layer can be connected with a wire pond, but
In the case of conductive resin, such a method is used, which is impossible. Particularly when applied to a solid-state imaging device in which light enters from the element surface side, it is necessary to use ITO or tin oxide as the conductive layer, and this method is useful even in that case.

〔Effect of the invention〕

As described above, according to the present invention, the padding layer 1
11 and 112 has the effect of improving the S/N of the read signal by shielding the influence of external electromagnetic waves and the influence of variations in stray capacitance due to non-uniformity of the molding agent by the conductive conductor 11113.

[Brief explanation of the drawing]

FIG. 1 shows an example of an n-plane view of a solid-state imaging device according to an embodiment of the present invention. FIG. 2 is an example of a cross-sectional view of a conventional solid-state imaging device. 101, 102... Insulating transparent substrate 106,
'206...Lower electrode 107, 207...
...Photoconductive layer 108, 208...Top electrode and wiring 109, 209...Grounding portion 111, 211 on wiring
Layers 112, 212...Padge page 1st layer 2nd layer 114, 214...Mold layer 113...
... Conductive layer 121 ... Conductive resin 226 ... Ground section on mounting board or above

Claims (1)

[Claims] In a solid-state imaging device comprising a plurality of photoelectric conversion elements formed on an insulating substrate, passivation layers 111 and 112 on the photoelectric conversion elements are made of metal, ITO, tin oxide, or conductive resin. A solid-state imaging device characterized by having a conductive layer 113.