JPS642353A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS642353A
JPS642353A JP15643387A JP15643387A JPS642353A JP S642353 A JPS642353 A JP S642353A JP 15643387 A JP15643387 A JP 15643387A JP 15643387 A JP15643387 A JP 15643387A JP S642353 A JPS642353 A JP S642353A
Authority
JP
Japan
Prior art keywords
light
film
shielding
shielded
transmitting
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP15643387A
Other languages
Japanese (ja)
Other versions
JPH012353A (en
Inventor
Hideaki Motoshima
Keiji Kamazaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP15643387A priority Critical patent/JPS642353A/en
Publication of JPH012353A publication Critical patent/JPH012353A/en
Publication of JPS642353A publication Critical patent/JPS642353A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE: To perform sufficiently the shielding of the highest-sensitivity part to prevent an erroneous operation due to light by a method wherein the upper part of an element, which converts the optical signals of a photo diode and so on into an electrical signal, is shielded with a light-transmitting conductive film and the other part is light-shielded with a light-shielding film or is light- shielded or shielded with a light-shielding conductive film.
CONSTITUTION: Semiconductors 2 and 3 are built into a substrate 1 and a light- transmitting conductive film 4, such as a poly Si film, is formed on the photo diode 2 through an insulating film (light-transmitting) 62. Moreover, metal wirings 5 are provided. Then, a proper light-transmitting insulating film 61 is covered on an element consisting of Si oxide and so on and a light-shielding film 7 consisting of Al and so on is formed thereon providing an aperture in the part over the diode 2. The film 4 is connected with a constant potential wire, such as a ground wire, of a semiconductor device through a wiring 5'. The film 7 is formed of one having a conductivity and can be connected to a constant-potential line. Thereby, the light irradiation to the element other than a light-receiving part can be negated sufficiently while the shielding effect of the light-receiving part is kept.
COPYRIGHT: (C)1989,JPO&Japio
JP15643387A 1987-06-25 1987-06-25 Semiconductor device Pending JPS642353A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15643387A JPS642353A (en) 1987-06-25 1987-06-25 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15643387A JPS642353A (en) 1987-06-25 1987-06-25 Semiconductor device

Publications (2)

Publication Number Publication Date
JPH012353A JPH012353A (en) 1989-01-06
JPS642353A true JPS642353A (en) 1989-01-06

Family

ID=15627643

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15643387A Pending JPS642353A (en) 1987-06-25 1987-06-25 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS642353A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6208447B1 (en) 1997-02-25 2001-03-27 Matsushita Electric Industrial Co., Ltd. Optical receiver
JP2005093549A (en) * 2003-09-12 2005-04-07 Seiko Instruments Inc Photoelectric converter and image sensor ic
JP2005197599A (en) * 2004-01-09 2005-07-21 Nec Kansai Ltd Photoreceptor and method of manufacturing the same
JP2007311533A (en) * 2006-05-18 2007-11-29 Tdk Corp Optical semiconductor device and method of manufacturing the same
JP2011082513A (en) * 2009-10-06 2011-04-21 National Central Univ Silicon photodetection module
JP4719730B2 (en) * 2006-11-20 2011-07-06 大谷 かおる Smoking products using kale leaves and Chinese cabbage

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5214387A (en) * 1975-07-25 1977-02-03 Hitachi Ltd Semiconductor device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5214387A (en) * 1975-07-25 1977-02-03 Hitachi Ltd Semiconductor device

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6208447B1 (en) 1997-02-25 2001-03-27 Matsushita Electric Industrial Co., Ltd. Optical receiver
JP2005093549A (en) * 2003-09-12 2005-04-07 Seiko Instruments Inc Photoelectric converter and image sensor ic
JP2005197599A (en) * 2004-01-09 2005-07-21 Nec Kansai Ltd Photoreceptor and method of manufacturing the same
JP4571807B2 (en) * 2004-01-09 2010-10-27 ルネサスエレクトロニクス株式会社 Light receiving element and manufacturing method thereof
JP2007311533A (en) * 2006-05-18 2007-11-29 Tdk Corp Optical semiconductor device and method of manufacturing the same
JP4719730B2 (en) * 2006-11-20 2011-07-06 大谷 かおる Smoking products using kale leaves and Chinese cabbage
JP2011082513A (en) * 2009-10-06 2011-04-21 National Central Univ Silicon photodetection module

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