JP2005135801A5 - - Google Patents
Download PDFInfo
- Publication number
- JP2005135801A5 JP2005135801A5 JP2003371862A JP2003371862A JP2005135801A5 JP 2005135801 A5 JP2005135801 A5 JP 2005135801A5 JP 2003371862 A JP2003371862 A JP 2003371862A JP 2003371862 A JP2003371862 A JP 2003371862A JP 2005135801 A5 JP2005135801 A5 JP 2005135801A5
- Authority
- JP
- Japan
- Prior art keywords
- microwave
- processing chamber
- substrate
- dielectric window
- plasma processing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 claims description 87
- 238000007789 sealing Methods 0.000 claims description 16
- 238000005192 partition Methods 0.000 claims description 7
- 239000007789 gas Substances 0.000 description 74
- 239000010408 film Substances 0.000 description 26
- 238000005530 etching Methods 0.000 description 14
- 229910052760 oxygen Inorganic materials 0.000 description 14
- -1 Si 3 N 4 Substances 0.000 description 9
- 230000006378 damage Effects 0.000 description 9
- 238000004380 ashing Methods 0.000 description 8
- 238000000034 method Methods 0.000 description 8
- 239000004065 semiconductor Substances 0.000 description 8
- 229910052757 nitrogen Inorganic materials 0.000 description 7
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 6
- 229910001882 dioxygen Inorganic materials 0.000 description 6
- 239000000463 material Substances 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 230000002093 peripheral effect Effects 0.000 description 6
- 150000004756 silanes Chemical class 0.000 description 6
- 229910052782 aluminium Inorganic materials 0.000 description 5
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 5
- 229910052750 molybdenum Inorganic materials 0.000 description 5
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 5
- 229920005591 polysilicon Polymers 0.000 description 5
- 230000008569 process Effects 0.000 description 5
- 239000010409 thin film Substances 0.000 description 5
- 229910004298 SiO 2 Inorganic materials 0.000 description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 4
- 230000015556 catabolic process Effects 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 4
- 238000004140 cleaning Methods 0.000 description 4
- XRRDNAZMVAXXQP-UHFFFAOYSA-N difluoro(dimethyl)silane Chemical compound C[Si](C)(F)F XRRDNAZMVAXXQP-UHFFFAOYSA-N 0.000 description 4
- TUTOKIOKAWTABR-UHFFFAOYSA-N dimethylalumane Chemical compound C[AlH]C TUTOKIOKAWTABR-UHFFFAOYSA-N 0.000 description 4
- LIKFHECYJZWXFJ-UHFFFAOYSA-N dimethyldichlorosilane Chemical compound C[Si](C)(Cl)Cl LIKFHECYJZWXFJ-UHFFFAOYSA-N 0.000 description 4
- 230000005284 excitation Effects 0.000 description 4
- FFUAGWLWBBFQJT-UHFFFAOYSA-N hexamethyldisilazane Chemical compound C[Si](C)(C)N[Si](C)(C)C FFUAGWLWBBFQJT-UHFFFAOYSA-N 0.000 description 4
- 238000005121 nitriding Methods 0.000 description 4
- 239000001301 oxygen Substances 0.000 description 4
- 229920002120 photoresistant polymer Polymers 0.000 description 4
- 239000002994 raw material Substances 0.000 description 4
- 229910052715 tantalum Inorganic materials 0.000 description 4
- 229910052719 titanium Inorganic materials 0.000 description 4
- VOITXYVAKOUIBA-UHFFFAOYSA-N triethylaluminium Chemical compound CC[Al](CC)CC VOITXYVAKOUIBA-UHFFFAOYSA-N 0.000 description 4
- RGGPNXQUMRMPRA-UHFFFAOYSA-N triethylgallium Chemical compound CC[Ga](CC)CC RGGPNXQUMRMPRA-UHFFFAOYSA-N 0.000 description 4
- MCULRUJILOGHCJ-UHFFFAOYSA-N triisobutylaluminium Chemical compound CC(C)C[Al](CC(C)C)CC(C)C MCULRUJILOGHCJ-UHFFFAOYSA-N 0.000 description 4
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 4
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 4
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 3
- 238000001816 cooling Methods 0.000 description 3
- 230000005684 electric field Effects 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 150000002739 metals Chemical class 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 3
- 238000009832 plasma treatment Methods 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 229910001936 tantalum oxide Inorganic materials 0.000 description 3
- 229910017083 AlN Inorganic materials 0.000 description 2
- 229910003902 SiCl 4 Inorganic materials 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- FAPWRFPIFSIZLT-UHFFFAOYSA-M Sodium chloride Chemical compound [Na+].[Cl-] FAPWRFPIFSIZLT-UHFFFAOYSA-M 0.000 description 2
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 2
- 229910010413 TiO 2 Inorganic materials 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- 239000000654 additive Substances 0.000 description 2
- 230000000996 additive effect Effects 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- FQNHWXHRAUXLFU-UHFFFAOYSA-N carbon monoxide;tungsten Chemical compound [W].[O+]#[C-].[O+]#[C-].[O+]#[C-].[O+]#[C-].[O+]#[C-].[O+]#[C-] FQNHWXHRAUXLFU-UHFFFAOYSA-N 0.000 description 2
- 239000012159 carrier gas Substances 0.000 description 2
- SLLGVCUQYRMELA-UHFFFAOYSA-N chlorosilicon Chemical compound Cl[Si] SLLGVCUQYRMELA-UHFFFAOYSA-N 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- UBHZUDXTHNMNLD-UHFFFAOYSA-N dimethylsilane Chemical compound C[SiH2]C UBHZUDXTHNMNLD-UHFFFAOYSA-N 0.000 description 2
- 229910001873 dinitrogen Inorganic materials 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229910052734 helium Inorganic materials 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 229910052743 krypton Inorganic materials 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 229910001507 metal halide Inorganic materials 0.000 description 2
- 150000005309 metal halides Chemical class 0.000 description 2
- 229910003465 moissanite Inorganic materials 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- 229910052754 neon Inorganic materials 0.000 description 2
- 238000013021 overheating Methods 0.000 description 2
- 230000001590 oxidative effect Effects 0.000 description 2
- 229920000090 poly(aryl ether) Polymers 0.000 description 2
- 230000001902 propagating effect Effects 0.000 description 2
- 229910052704 radon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- VCZQFJFZMMALHB-UHFFFAOYSA-N tetraethylsilane Chemical compound CC[Si](CC)(CC)CC VCZQFJFZMMALHB-UHFFFAOYSA-N 0.000 description 2
- LFQCEHFDDXELDD-UHFFFAOYSA-N tetramethyl orthosilicate Chemical compound CO[Si](OC)(OC)OC LFQCEHFDDXELDD-UHFFFAOYSA-N 0.000 description 2
- 229910052718 tin Inorganic materials 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 229910052724 xenon Inorganic materials 0.000 description 2
- QTBSBXVTEAMEQO-UHFFFAOYSA-M Acetate Chemical compound CC([O-])=O QTBSBXVTEAMEQO-UHFFFAOYSA-M 0.000 description 1
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- 229910016036 BaF 2 Inorganic materials 0.000 description 1
- 229910001369 Brass Inorganic materials 0.000 description 1
- 229910004261 CaF 2 Inorganic materials 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- 239000004962 Polyamide-imide Substances 0.000 description 1
- 239000004698 Polyethylene Substances 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 239000004743 Polypropylene Substances 0.000 description 1
- 239000004793 Polystyrene Substances 0.000 description 1
- 229920001328 Polyvinylidene chloride Polymers 0.000 description 1
- 229910020177 SiOF Inorganic materials 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000010951 brass Substances 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 229920002301 cellulose acetate Polymers 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000000498 cooling water Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910001385 heavy metal Inorganic materials 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 239000010410 layer Substances 0.000 description 1
- 229910052745 lead Inorganic materials 0.000 description 1
- PQXKHYXIUOZZFA-UHFFFAOYSA-M lithium fluoride Inorganic materials [Li+].[F-] PQXKHYXIUOZZFA-UHFFFAOYSA-M 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 1
- 150000002736 metal compounds Chemical class 0.000 description 1
- DJFIXIWASJJNJQ-UHFFFAOYSA-N methyltetrasiletane Chemical compound C[SiH]1[SiH2][SiH2][SiH2]1 DJFIXIWASJJNJQ-UHFFFAOYSA-N 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229920002312 polyamide-imide Polymers 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 229920000728 polyester Polymers 0.000 description 1
- 229920000573 polyethylene Polymers 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 229920001155 polypropylene Polymers 0.000 description 1
- 229920002223 polystyrene Polymers 0.000 description 1
- 229920000915 polyvinyl chloride Polymers 0.000 description 1
- 239000004800 polyvinyl chloride Substances 0.000 description 1
- 239000005033 polyvinylidene chloride Substances 0.000 description 1
- WCUXLLCKKVVCTQ-UHFFFAOYSA-M potassium chloride Inorganic materials [Cl-].[K+] WCUXLLCKKVVCTQ-UHFFFAOYSA-M 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 230000000644 propagated effect Effects 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000011780 sodium chloride Substances 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- CZDYPVPMEAXLPK-UHFFFAOYSA-N tetramethylsilane Chemical compound C[Si](C)(C)C CZDYPVPMEAXLPK-UHFFFAOYSA-N 0.000 description 1
- 230000026683 transduction Effects 0.000 description 1
- 238000010361 transduction Methods 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2003371862A JP2005135801A (ja) | 2003-10-31 | 2003-10-31 | 処理装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2003371862A JP2005135801A (ja) | 2003-10-31 | 2003-10-31 | 処理装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2005135801A JP2005135801A (ja) | 2005-05-26 |
| JP2005135801A5 true JP2005135801A5 (enExample) | 2006-12-14 |
Family
ID=34648394
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2003371862A Pending JP2005135801A (ja) | 2003-10-31 | 2003-10-31 | 処理装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2005135801A (enExample) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101183039B1 (ko) | 2007-06-11 | 2012-09-20 | 고쿠리츠다이가쿠호진 도호쿠다이가쿠 | 플라즈마 처리 장치 및 플라즈마 처리 장치의 사용 방법 |
| CN101632330B (zh) * | 2007-06-11 | 2012-11-21 | 东京毅力科创株式会社 | 等离子体处理装置、供电装置及等离子体处理装置的使用方法 |
| JPWO2008153052A1 (ja) * | 2007-06-11 | 2010-08-26 | 東京エレクトロン株式会社 | プラズマ処理装置およびプラズマ処理装置の使用方法 |
| JP4944198B2 (ja) * | 2007-06-11 | 2012-05-30 | 東京エレクトロン株式会社 | プラズマ処理装置および処理方法 |
| CN101667524B (zh) * | 2008-09-03 | 2011-09-14 | 北京北方微电子基地设备工艺研究中心有限责任公司 | 一种反应腔室及应用该反应腔室的等离子体处理设备 |
| JP2010251064A (ja) * | 2009-04-14 | 2010-11-04 | Ulvac Japan Ltd | プラズマ発生装置 |
| CN109778138B (zh) * | 2019-03-21 | 2020-12-29 | 郑州磨料磨具磨削研究所有限公司 | 一种微波等离子体金刚石膜沉积设备 |
-
2003
- 2003-10-31 JP JP2003371862A patent/JP2005135801A/ja active Pending
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR100554116B1 (ko) | 멀티슬롯 안테나를 이용한 표면파 플라즈마 처리장치 | |
| KR100278187B1 (ko) | 플라즈마 처리 방법 및 기판 처리 방법 | |
| JP2003109941A (ja) | プラズマ処理装置および表面処理方法 | |
| JPH1140397A (ja) | 環状導波路を有するマイクロ波供給器及びそれを備えたプラズマ処理装置及び処理方法 | |
| JP2008181710A (ja) | プラズマ処理装置及び方法 | |
| EP1895565A1 (en) | Plasma processing apparatus and method | |
| JP4280603B2 (ja) | 処理方法 | |
| JP3907444B2 (ja) | プラズマ処理装置及び構造体の製造方法 | |
| JP2005135801A5 (enExample) | ||
| US20070062645A1 (en) | Processing apparatus | |
| JP2005135801A (ja) | 処理装置 | |
| JP4478352B2 (ja) | プラズマ処理装置及びプラズマ処理方法並びに構造体の製造方法 | |
| JP4298049B2 (ja) | 誘電体窓を用いたマイクロ波プラズマ処理装置 | |
| JP2008027796A (ja) | プラズマ処理装置 | |
| JP3530788B2 (ja) | マイクロ波供給器及びプラズマ処理装置並びに処理方法 | |
| JP2008181912A (ja) | プラズマ処理装置 | |
| US20080149274A1 (en) | Plasma processing apparatus | |
| JP4669153B2 (ja) | プラズマ処理装置、プラズマ処理方法および素子の製造方法 | |
| JP2001043997A (ja) | プラズマ処理装置 | |
| JP2006012962A (ja) | 斜め貫通孔付真空紫外光遮光板を用いたマイクロ波プラズマ処理装置及び処理方法 | |
| JPH11193466A (ja) | プラズマ処理装置及びプラズマ処理方法 | |
| JPH11329792A (ja) | マイクロ波供給器 | |
| JP4532632B2 (ja) | プラズマ処理装置 | |
| JP2008282947A (ja) | プラズマ発生装置、プラズマ処理装置およびプラズマ処理方法 | |
| JP2008027798A (ja) | プラズマ処理装置 |