JP2005129857A5 - - Google Patents

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Publication number
JP2005129857A5
JP2005129857A5 JP2003366336A JP2003366336A JP2005129857A5 JP 2005129857 A5 JP2005129857 A5 JP 2005129857A5 JP 2003366336 A JP2003366336 A JP 2003366336A JP 2003366336 A JP2003366336 A JP 2003366336A JP 2005129857 A5 JP2005129857 A5 JP 2005129857A5
Authority
JP
Japan
Prior art keywords
conductivity type
layer
light emitting
semiconductor light
recess
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2003366336A
Other languages
English (en)
Japanese (ja)
Other versions
JP4492093B2 (ja
JP2005129857A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2003366336A priority Critical patent/JP4492093B2/ja
Priority claimed from JP2003366336A external-priority patent/JP4492093B2/ja
Priority to US10/973,193 priority patent/US7259398B2/en
Publication of JP2005129857A publication Critical patent/JP2005129857A/ja
Publication of JP2005129857A5 publication Critical patent/JP2005129857A5/ja
Priority to US11/879,643 priority patent/US7579200B2/en
Application granted granted Critical
Publication of JP4492093B2 publication Critical patent/JP4492093B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

JP2003366336A 2003-10-27 2003-10-27 半導体発光装置とその製造方法 Expired - Fee Related JP4492093B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2003366336A JP4492093B2 (ja) 2003-10-27 2003-10-27 半導体発光装置とその製造方法
US10/973,193 US7259398B2 (en) 2003-10-27 2004-10-26 Semiconductor light emitting apparatus and method of fabricating the same
US11/879,643 US7579200B2 (en) 2003-10-27 2007-07-18 Semiconductor light emitting apparatus and method of fabricating the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2003366336A JP4492093B2 (ja) 2003-10-27 2003-10-27 半導体発光装置とその製造方法

Publications (3)

Publication Number Publication Date
JP2005129857A JP2005129857A (ja) 2005-05-19
JP2005129857A5 true JP2005129857A5 (enExample) 2006-07-27
JP4492093B2 JP4492093B2 (ja) 2010-06-30

Family

ID=34510233

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2003366336A Expired - Fee Related JP4492093B2 (ja) 2003-10-27 2003-10-27 半導体発光装置とその製造方法

Country Status (2)

Country Link
US (2) US7259398B2 (enExample)
JP (1) JP4492093B2 (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102008022942A1 (de) * 2008-05-09 2009-11-12 Osram Opto Semiconductors Gmbh Strahlungsemittierender Halbleiterchip
US8455856B1 (en) * 2010-04-09 2013-06-04 Stc.Unm Integration of LED driver circuit with LED
JP2012119585A (ja) * 2010-12-02 2012-06-21 Showa Denko Kk 発光ダイオード、発光ダイオードランプ及び照明装置
JP6245319B1 (ja) * 2016-06-30 2017-12-13 富士ゼロックス株式会社 発光部品、プリントヘッド、画像形成装置及び半導体積層基板
JP6369613B1 (ja) * 2017-09-21 2018-08-08 富士ゼロックス株式会社 発光部品、プリントヘッド及び画像形成装置

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02283088A (ja) * 1989-04-24 1990-11-20 Matsushita Electric Ind Co Ltd 半導体レーザ装置
JP2685332B2 (ja) * 1990-05-14 1997-12-03 松下電子工業株式会社 半導体レーザ装置
JP3098582B2 (ja) 1991-09-06 2000-10-16 松下電子工業株式会社 半導体発光素子
KR19990009567A (ko) * 1997-07-10 1999-02-05 구자홍 레이저 다이오드 및 그 제조방법
JP2000012963A (ja) * 1998-06-23 2000-01-14 Nec Corp 光半導体装置の製造方法
JP2000244059A (ja) * 1999-02-23 2000-09-08 Matsushita Electric Ind Co Ltd 半導体レーザ装置
JP2004304161A (ja) * 2003-03-14 2004-10-28 Sony Corp 発光素子、発光装置、画像表示装置、発光素子の製造方法及び画像表示装置の製造方法

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