JP2005123563A - ポリシリコン結晶化の制御方法 - Google Patents
ポリシリコン結晶化の制御方法 Download PDFInfo
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- JP2005123563A JP2005123563A JP2004080363A JP2004080363A JP2005123563A JP 2005123563 A JP2005123563 A JP 2005123563A JP 2004080363 A JP2004080363 A JP 2004080363A JP 2004080363 A JP2004080363 A JP 2004080363A JP 2005123563 A JP2005123563 A JP 2005123563A
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- 229910021420 polycrystalline silicon Inorganic materials 0.000 title claims abstract description 69
- 229920005591 polysilicon Polymers 0.000 title claims abstract description 67
- 238000002425 crystallisation Methods 0.000 title claims description 29
- 230000008025 crystallization Effects 0.000 title claims description 29
- 238000000034 method Methods 0.000 title claims description 26
- 229910021417 amorphous silicon Inorganic materials 0.000 claims abstract description 62
- 239000000758 substrate Substances 0.000 claims abstract description 27
- 230000006911 nucleation Effects 0.000 claims abstract description 8
- 238000010899 nucleation Methods 0.000 claims abstract description 8
- 238000000059 patterning Methods 0.000 claims abstract description 7
- 238000005224 laser annealing Methods 0.000 claims description 13
- 239000002245 particle Substances 0.000 claims description 6
- 239000010409 thin film Substances 0.000 abstract description 20
- 239000010408 film Substances 0.000 abstract description 19
- 238000004519 manufacturing process Methods 0.000 abstract description 13
- 230000020169 heat generation Effects 0.000 abstract description 4
- 239000010410 layer Substances 0.000 description 155
- 239000013078 crystal Substances 0.000 description 25
- 239000000463 material Substances 0.000 description 17
- 229910052751 metal Inorganic materials 0.000 description 15
- 239000002184 metal Substances 0.000 description 15
- 238000012546 transfer Methods 0.000 description 10
- 238000005229 chemical vapour deposition Methods 0.000 description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 8
- 229910052710 silicon Inorganic materials 0.000 description 8
- 239000010703 silicon Substances 0.000 description 8
- 239000011229 interlayer Substances 0.000 description 6
- 238000005240 physical vapour deposition Methods 0.000 description 6
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 6
- 238000006356 dehydrogenation reaction Methods 0.000 description 5
- 238000009826 distribution Methods 0.000 description 5
- 238000005530 etching Methods 0.000 description 5
- 238000002161 passivation Methods 0.000 description 5
- 238000001816 cooling Methods 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- 239000004973 liquid crystal related substance Substances 0.000 description 4
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 229910052799 carbon Inorganic materials 0.000 description 3
- 238000001312 dry etching Methods 0.000 description 3
- 238000000206 photolithography Methods 0.000 description 3
- 239000007790 solid phase Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- -1 carbon ion Chemical class 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 238000004880 explosion Methods 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 239000000155 melt Substances 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- TXEYQDLBPFQVAA-UHFFFAOYSA-N tetrafluoromethane Chemical compound FC(F)(F)F TXEYQDLBPFQVAA-UHFFFAOYSA-N 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910004205 SiNX Inorganic materials 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 239000003349 gelling agent Substances 0.000 description 1
- 230000036571 hydration Effects 0.000 description 1
- 238000006703 hydration reaction Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 238000000960 laser cooling Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 230000036632 reaction speed Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- OFIYHXOOOISSDN-UHFFFAOYSA-N tellanylidenegallium Chemical compound [Te]=[Ga] OFIYHXOOOISSDN-UHFFFAOYSA-N 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02664—Aftertreatments
- H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
- H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
- H01L21/02686—Pulsed laser beam
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
- C30B13/16—Heating of the molten zone
- C30B13/22—Heating of the molten zone by irradiation or electric discharge
- C30B13/24—Heating of the molten zone by irradiation or electric discharge using electromagnetic waves
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
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- H01L21/02365—Forming inorganic semiconducting materials on a substrate
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- H01L21/02365—Forming inorganic semiconducting materials on a substrate
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- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
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- H01L21/02518—Deposited layers
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- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/04—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66742—Thin film unipolar transistors
- H01L29/6675—Amorphous silicon or polysilicon transistors
- H01L29/66757—Lateral single gate single channel transistors with non-inverted structure, i.e. the channel layer is formed before the gate
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
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- H01L29/76—Unipolar devices, e.g. field effect transistors
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- H01L29/78—Field effect transistors with field effect produced by an insulated gate
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- H01L27/1259—Multistep manufacturing methods
- H01L27/127—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement
- H01L27/1274—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement using crystallisation of amorphous semiconductor or recrystallisation of crystalline semiconductor
- H01L27/1281—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement using crystallisation of amorphous semiconductor or recrystallisation of crystalline semiconductor by using structural features to control crystal growth, e.g. placement of grain filters
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Abstract
【解決手段】 先ず、基板200より低い熱伝導係数を有する耐熱層201を、基板200上に形成し、基板200より高い熱伝導係数を有するヒートシンク層202を、耐熱層201上に形成する。ヒートシンク層202中をパターニングして、耐熱層201の一部を露出する開口部206を形成し、非晶質シリコン層204をヒートシンク層202上および開口部206中に形成し、発熱層205を非晶質シリコン層204上に形成する。そして、ヒートシンク層202上の非晶質シリコン層204をレーザアニールして、核生成サイトを形成する。
【選択図】 図2B
Description
従って、本発明は薄膜トランジスタの製造に応用することができる、キャリア移動度がより高い装置を得ることができる。
Claims (1)
- 基板より低い熱伝導係数を有する耐熱層を、前記基板上に形成するステップと、
前記基板より高い熱伝導係数を有するヒートシンク層を、前記耐熱層上に形成するステップと、
前記ヒートシンク層をパターニングして、前記耐熱層の一部が露出する開口部を形成するステップと、
非晶質シリコン層を、前記ヒートシンク層上および前記開口部中に形成するステップと、
発熱層を、前記非晶質シリコン層上に形成するステップと、
前記ヒートシンク層上に位置する前記非晶質シリコン層をレーザアニールして、核生成サイトを形成するステップとを含むポリシリコン結晶化の制御方法であって、
ポリシリコンの結晶化は、前記開口部中の前記非晶質シリコン層へ向かって成長し、良好な粒配列でマイクロメーター級の粒径を有するポリシリコン層を形成することを特徴とするポリシリコン結晶化の制御方法。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW092128469A TWI310585B (en) | 2003-10-14 | 2003-10-14 | Method of controlling polysilicon crystallization |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2005123563A true JP2005123563A (ja) | 2005-05-12 |
JP4286692B2 JP4286692B2 (ja) | 2009-07-01 |
Family
ID=34421037
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2004080363A Expired - Fee Related JP4286692B2 (ja) | 2003-10-14 | 2004-03-19 | ポリシリコン結晶化の制御方法 |
Country Status (3)
Country | Link |
---|---|
US (1) | US7435667B2 (ja) |
JP (1) | JP4286692B2 (ja) |
TW (1) | TWI310585B (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2012227523A (ja) * | 2011-04-08 | 2012-11-15 | Semiconductor Energy Lab Co Ltd | 半導体装置及びその作製方法 |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI310585B (en) * | 2003-10-14 | 2009-06-01 | Ind Tech Res Inst | Method of controlling polysilicon crystallization |
KR101176539B1 (ko) * | 2003-11-04 | 2012-08-24 | 삼성전자주식회사 | 폴리 실리콘막 형성 방법, 이 방법으로 형성된 폴리실리콘막을 구비하는 박막 트랜지스터 및 그 제조방법 |
US7569462B2 (en) * | 2006-12-13 | 2009-08-04 | Applied Materials, Inc. | Directional crystallization of silicon sheets using rapid thermal processing |
CN102945789B (zh) * | 2012-11-22 | 2015-07-22 | 京东方科技集团股份有限公司 | 低温多晶硅薄膜制备方法、薄膜晶体管及其制备方法 |
CN103700695B (zh) * | 2013-12-25 | 2017-11-03 | 深圳市华星光电技术有限公司 | 低温多晶硅薄膜及其制备方法、晶体管 |
CN104658891B (zh) | 2015-03-03 | 2019-03-15 | 京东方科技集团股份有限公司 | 低温多晶硅薄膜的制备方法、薄膜晶体管及显示装置 |
CN106129121B (zh) | 2016-08-25 | 2019-10-25 | 京东方科技集团股份有限公司 | 一种薄膜晶体管及制备方法、显示装置 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6780687B2 (en) * | 2000-01-28 | 2004-08-24 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing a semiconductor device having a heat absorbing layer |
TW569350B (en) * | 2002-10-31 | 2004-01-01 | Au Optronics Corp | Method for fabricating a polysilicon layer |
TWI316736B (en) * | 2003-05-02 | 2009-11-01 | Au Optronics Corp | Method of fabricating polysilicon film by excimer laser crystallization process |
US6890819B2 (en) * | 2003-09-18 | 2005-05-10 | Macronix International Co., Ltd. | Methods for forming PN junction, one-time programmable read-only memory and fabricating processes thereof |
TWI310585B (en) * | 2003-10-14 | 2009-06-01 | Ind Tech Res Inst | Method of controlling polysilicon crystallization |
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2003
- 2003-10-14 TW TW092128469A patent/TWI310585B/zh not_active IP Right Cessation
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2004
- 2004-02-05 US US10/772,511 patent/US7435667B2/en not_active Expired - Fee Related
- 2004-03-19 JP JP2004080363A patent/JP4286692B2/ja not_active Expired - Fee Related
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2012227523A (ja) * | 2011-04-08 | 2012-11-15 | Semiconductor Energy Lab Co Ltd | 半導体装置及びその作製方法 |
US9893196B2 (en) | 2011-04-08 | 2018-02-13 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device comprising oxide semiconductor film |
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JP4286692B2 (ja) | 2009-07-01 |
US7435667B2 (en) | 2008-10-14 |
US20050079294A1 (en) | 2005-04-14 |
TWI310585B (en) | 2009-06-01 |
TW200514140A (en) | 2005-04-16 |
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