JP2005109020A - 半導体基板 - Google Patents
半導体基板 Download PDFInfo
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- JP2005109020A JP2005109020A JP2003338152A JP2003338152A JP2005109020A JP 2005109020 A JP2005109020 A JP 2005109020A JP 2003338152 A JP2003338152 A JP 2003338152A JP 2003338152 A JP2003338152 A JP 2003338152A JP 2005109020 A JP2005109020 A JP 2005109020A
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- 239000000758 substrate Substances 0.000 title claims abstract description 74
- 239000004065 semiconductor Substances 0.000 title claims abstract description 72
- 229910005542 GaSb Inorganic materials 0.000 claims abstract description 28
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims abstract description 22
- 150000001875 compounds Chemical class 0.000 claims description 30
- 230000010287 polarization Effects 0.000 abstract description 19
- 238000004519 manufacturing process Methods 0.000 abstract description 13
- 238000000926 separation method Methods 0.000 abstract description 5
- 239000002096 quantum dot Substances 0.000 description 29
- 238000000034 method Methods 0.000 description 23
- 239000013078 crystal Substances 0.000 description 19
- 239000002052 molecular layer Substances 0.000 description 8
- 238000001451 molecular beam epitaxy Methods 0.000 description 7
- 238000012545 processing Methods 0.000 description 7
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical class [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 description 6
- 238000011160 research Methods 0.000 description 5
- 229910000673 Indium arsenide Inorganic materials 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000004891 communication Methods 0.000 description 2
- 230000000994 depressogenic effect Effects 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 238000002128 reflection high energy electron diffraction Methods 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- 238000002441 X-ray diffraction Methods 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000001427 coherent effect Effects 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000007687 exposure technique Methods 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 230000010365 information processing Effects 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000005610 quantum mechanics Effects 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000000603 solid-source molecular beam epitaxy Methods 0.000 description 1
- 238000004611 spectroscopical analysis Methods 0.000 description 1
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02387—Group 13/15 materials
- H01L21/02395—Arsenides
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- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02455—Group 13/15 materials
- H01L21/02463—Arsenides
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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- H01L21/02518—Deposited layers
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
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- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
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- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
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- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
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- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/04—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes
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Abstract
【解決手段】 本発明に係る半導体基板16の基板は、GaAsで構成されている。そして、その表面には、GaSbで構成された、アスペクト比が2以上5以下である略楕円形状の量子リング14が複数形成されている。そして、これら複数の量子リング14は略同一方向に沿って延在している。この半導体基板16の表面に光を照射した場合、その照射光の偏光のうち、量子リング14の延在方向である楕円の長軸方向に平行な偏光は反射され、短軸方向に平行な偏光は透過する。すなわち、半導体基板16は、一方の偏光成分を反射し、他方の偏光成分を透過する。なお、アスペクト比が1に近い略真円形状の量子リングを有する従来の半導体基板では、このような偏光成分の分離を実現することができなかった。従って、半導体基板16は、従来の半導体基板では困難であった偏光デバイスへの応用に好適なものである。
【選択図】 図1
Description
Claims (5)
- 第1の化合物半導体で構成され、且つ、該第1の化合物半導体とは異なる第2の化合物半導体で構成された複数の量子リングが表面に形成された半導体基板であって、
前記各量子リングはアスペクト比が2以上5以下の略楕円形状を有し、前記複数の量子リングは略同一方向に延在している、半導体基板。 - 前記第1の化合物半導体がIII−V族化合物半導体である、請求項1に記載の半導体基板。
- 前記第1の化合物半導体がGaAsである、請求項1に記載の半導体基板。
- 前記第2の化合物半導体がIII−V族化合物半導体である、請求項1〜3のいずれか一項に記載の半導体基板。
- 前記第2の化合物半導体がGaSbである、請求項1〜3のいずれか一項に記載の半導体基板。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2003338152A JP4824270B2 (ja) | 2003-09-29 | 2003-09-29 | 半導体基板 |
US10/947,354 US7217948B2 (en) | 2003-09-29 | 2004-09-23 | Semiconductor substrate |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2003338152A JP4824270B2 (ja) | 2003-09-29 | 2003-09-29 | 半導体基板 |
Publications (2)
Publication Number | Publication Date |
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JP2005109020A true JP2005109020A (ja) | 2005-04-21 |
JP4824270B2 JP4824270B2 (ja) | 2011-11-30 |
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Application Number | Title | Priority Date | Filing Date |
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JP2003338152A Expired - Lifetime JP4824270B2 (ja) | 2003-09-29 | 2003-09-29 | 半導体基板 |
Country Status (2)
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US (1) | US7217948B2 (ja) |
JP (1) | JP4824270B2 (ja) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007272019A (ja) * | 2006-03-31 | 2007-10-18 | Optoelectronic Industry & Technology Development Association | 偏光板 |
JP2007272018A (ja) * | 2006-03-31 | 2007-10-18 | Optoelectronic Industry & Technology Development Association | 偏光板 |
JP2007272017A (ja) * | 2006-03-31 | 2007-10-18 | Optoelectronic Industry & Technology Development Association | 偏光板 |
JP2011171738A (ja) * | 2010-02-18 | 2011-09-01 | Lg Innotek Co Ltd | 発光素子、発光素子の製造方法、発光素子パッケージ及び照明システム |
JP2012099698A (ja) * | 2010-11-04 | 2012-05-24 | Fujitsu Ltd | 光半導体素子及びその製造方法 |
US10862679B2 (en) | 2014-04-03 | 2020-12-08 | Quantum Base Limited | Quantum physical unclonable function |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7465595B2 (en) * | 2004-11-09 | 2008-12-16 | Fujitsu Limited | Quantum device, manufacturing method of the same and controlling method of the same |
WO2008085974A2 (en) * | 2007-01-08 | 2008-07-17 | Unniversity Of Connecticut | Nonvolatile memory and three-state fets using cladded quantum dot gate structure |
JP6673038B2 (ja) * | 2016-06-10 | 2020-03-25 | 富士通株式会社 | 半導体結晶基板、赤外線検出装置、半導体結晶基板の製造方法及び赤外線検出装置の製造方法 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001074935A (ja) * | 1999-09-03 | 2001-03-23 | Sumitomo Chem Co Ltd | ワイヤーグリッド型偏光光学素子 |
JP2001074934A (ja) * | 1999-09-03 | 2001-03-23 | Sumitomo Chem Co Ltd | 偏光光学素子 |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5463518A (en) * | 1987-04-20 | 1995-10-31 | Hitachi, Ltd. | Magnetic head and magnetic recording and reproducing apparatus using a superconducting quantum interference device |
US7042004B2 (en) * | 2002-06-21 | 2006-05-09 | Interuniversitair Microelektronica Centrum (Imec) | Method of forming quantum-mechanical memory and computational devices and devices obtained thereof |
-
2003
- 2003-09-29 JP JP2003338152A patent/JP4824270B2/ja not_active Expired - Lifetime
-
2004
- 2004-09-23 US US10/947,354 patent/US7217948B2/en active Active
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001074935A (ja) * | 1999-09-03 | 2001-03-23 | Sumitomo Chem Co Ltd | ワイヤーグリッド型偏光光学素子 |
JP2001074934A (ja) * | 1999-09-03 | 2001-03-23 | Sumitomo Chem Co Ltd | 偏光光学素子 |
Non-Patent Citations (3)
Title |
---|
JPN6010021361, F.Hatami, et.al., "Radiative recombination in type−II GaSb/GaAs quantum dots", Applied Physics Letters, 19950731, Vol.67, No.5, p.656−658, US * |
JPN6010021362, Brian R. Bennett, et.al., "Molecular beam epitaxial growth of InSb, GaSb, and AlSb nanometer−scale dots on GaAs", Applied Physics Letters, 19960122, vol.68, No.4, p.505−507, US * |
JPN6010021670, Hanxuan Li, "Influence of indium composition on the surface morphology of self−organized InGaAS quantum dots on G", Jouranal of Applied Physics, 20000101, Vol.87, No.1, p.188−191, US * |
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007272019A (ja) * | 2006-03-31 | 2007-10-18 | Optoelectronic Industry & Technology Development Association | 偏光板 |
JP2007272018A (ja) * | 2006-03-31 | 2007-10-18 | Optoelectronic Industry & Technology Development Association | 偏光板 |
JP2007272017A (ja) * | 2006-03-31 | 2007-10-18 | Optoelectronic Industry & Technology Development Association | 偏光板 |
JP4559999B2 (ja) * | 2006-03-31 | 2010-10-13 | 財団法人光産業技術振興協会 | 偏光板 |
JP4559998B2 (ja) * | 2006-03-31 | 2010-10-13 | 財団法人光産業技術振興協会 | 偏光板 |
JP4619977B2 (ja) * | 2006-03-31 | 2011-01-26 | 財団法人光産業技術振興協会 | 偏光板 |
JP2011171738A (ja) * | 2010-02-18 | 2011-09-01 | Lg Innotek Co Ltd | 発光素子、発光素子の製造方法、発光素子パッケージ及び照明システム |
JP2012099698A (ja) * | 2010-11-04 | 2012-05-24 | Fujitsu Ltd | 光半導体素子及びその製造方法 |
US10862679B2 (en) | 2014-04-03 | 2020-12-08 | Quantum Base Limited | Quantum physical unclonable function |
Also Published As
Publication number | Publication date |
---|---|
US20050067614A1 (en) | 2005-03-31 |
US7217948B2 (en) | 2007-05-15 |
JP4824270B2 (ja) | 2011-11-30 |
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