JP2005101268A5 - - Google Patents

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Publication number
JP2005101268A5
JP2005101268A5 JP2003333070A JP2003333070A JP2005101268A5 JP 2005101268 A5 JP2005101268 A5 JP 2005101268A5 JP 2003333070 A JP2003333070 A JP 2003333070A JP 2003333070 A JP2003333070 A JP 2003333070A JP 2005101268 A5 JP2005101268 A5 JP 2005101268A5
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JP
Japan
Prior art keywords
main surface
forming
semiconductor substrate
via hole
pad electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2003333070A
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English (en)
Japanese (ja)
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JP2005101268A (ja
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Publication date
Application filed filed Critical
Priority to JP2003333070A priority Critical patent/JP2005101268A/ja
Priority claimed from JP2003333070A external-priority patent/JP2005101268A/ja
Publication of JP2005101268A publication Critical patent/JP2005101268A/ja
Publication of JP2005101268A5 publication Critical patent/JP2005101268A5/ja
Pending legal-status Critical Current

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JP2003333070A 2003-09-25 2003-09-25 半導体装置の製造方法 Pending JP2005101268A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2003333070A JP2005101268A (ja) 2003-09-25 2003-09-25 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2003333070A JP2005101268A (ja) 2003-09-25 2003-09-25 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JP2005101268A JP2005101268A (ja) 2005-04-14
JP2005101268A5 true JP2005101268A5 (enExample) 2006-11-02

Family

ID=34461188

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2003333070A Pending JP2005101268A (ja) 2003-09-25 2003-09-25 半導体装置の製造方法

Country Status (1)

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JP (1) JP2005101268A (enExample)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4694305B2 (ja) * 2005-08-16 2011-06-08 ルネサスエレクトロニクス株式会社 半導体ウエハの製造方法
EP2044637B1 (en) * 2006-07-25 2015-09-16 LG Chem, Ltd. Method of manufacturing organic light emitting device and organic light emitting device manufactured by using the method
JP5143382B2 (ja) * 2006-07-27 2013-02-13 オンセミコンダクター・トレーディング・リミテッド 半導体装置及びその製造方法
US7791199B2 (en) 2006-11-22 2010-09-07 Tessera, Inc. Packaged semiconductor chips
US8569876B2 (en) 2006-11-22 2013-10-29 Tessera, Inc. Packaged semiconductor chips with array
JP5584474B2 (ja) 2007-03-05 2014-09-03 インヴェンサス・コーポレイション 貫通ビアによって前面接点に接続された後面接点を有するチップ
US8193615B2 (en) 2007-07-31 2012-06-05 DigitalOptics Corporation Europe Limited Semiconductor packaging process using through silicon vias
JP2010205921A (ja) 2009-03-03 2010-09-16 Olympus Corp 半導体装置および半導体装置の製造方法
US8796135B2 (en) 2010-07-23 2014-08-05 Tessera, Inc. Microelectronic elements with rear contacts connected with via first or via middle structures
US8791575B2 (en) 2010-07-23 2014-07-29 Tessera, Inc. Microelectronic elements having metallic pads overlying vias
US9640437B2 (en) 2010-07-23 2017-05-02 Tessera, Inc. Methods of forming semiconductor elements using micro-abrasive particle stream
JP5656501B2 (ja) * 2010-08-06 2015-01-21 セミコンダクター・コンポーネンツ・インダストリーズ・リミテッド・ライアビリティ・カンパニー 半導体装置及びその製造方法
US8659152B2 (en) * 2010-09-15 2014-02-25 Osamu Fujita Semiconductor device
US8610259B2 (en) 2010-09-17 2013-12-17 Tessera, Inc. Multi-function and shielded 3D interconnects
US8847380B2 (en) 2010-09-17 2014-09-30 Tessera, Inc. Staged via formation from both sides of chip
US8587126B2 (en) 2010-12-02 2013-11-19 Tessera, Inc. Stacked microelectronic assembly with TSVs formed in stages with plural active chips
US8736066B2 (en) 2010-12-02 2014-05-27 Tessera, Inc. Stacked microelectronic assemby with TSVS formed in stages and carrier above chip
US8637968B2 (en) 2010-12-02 2014-01-28 Tessera, Inc. Stacked microelectronic assembly having interposer connecting active chips
US8610264B2 (en) 2010-12-08 2013-12-17 Tessera, Inc. Compliant interconnects in wafers
TWI459485B (zh) * 2011-01-17 2014-11-01 精材科技股份有限公司 晶片封裝體的形成方法
US10403676B2 (en) * 2015-03-31 2019-09-03 Hamamatsu Photonics K.K. Semiconductor device manufacturing method
CN110867432A (zh) * 2019-11-28 2020-03-06 苏州晶方半导体科技股份有限公司 芯片封装结构以及封装方法
US20230178579A1 (en) * 2020-03-31 2023-06-08 Sony Semiconductor Solutions Corporation Light receiving element and electronic device

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