JP2005079441A - 半導体装置の製造方法 - Google Patents
半導体装置の製造方法 Download PDFInfo
- Publication number
- JP2005079441A JP2005079441A JP2003310031A JP2003310031A JP2005079441A JP 2005079441 A JP2005079441 A JP 2005079441A JP 2003310031 A JP2003310031 A JP 2003310031A JP 2003310031 A JP2003310031 A JP 2003310031A JP 2005079441 A JP2005079441 A JP 2005079441A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor device
- manufacturing
- wafer
- forming
- connection hole
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title claims abstract description 121
- 239000004065 semiconductor Substances 0.000 title claims abstract description 92
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 63
- 239000000463 material Substances 0.000 claims description 59
- 238000007747 plating Methods 0.000 claims description 16
- 238000005530 etching Methods 0.000 claims description 14
- 230000002093 peripheral effect Effects 0.000 claims description 12
- 238000005498 polishing Methods 0.000 claims description 3
- 239000002002 slurry Substances 0.000 abstract description 12
- 238000011282 treatment Methods 0.000 abstract description 5
- 229920002120 photoresistant polymer Polymers 0.000 description 80
- 239000010410 layer Substances 0.000 description 54
- 239000011229 interlayer Substances 0.000 description 36
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 31
- 229910052802 copper Inorganic materials 0.000 description 31
- 239000010949 copper Substances 0.000 description 31
- 150000004767 nitrides Chemical class 0.000 description 21
- 238000004380 ashing Methods 0.000 description 14
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 8
- 229910052760 oxygen Inorganic materials 0.000 description 8
- 239000001301 oxygen Substances 0.000 description 8
- 238000000206 photolithography Methods 0.000 description 8
- 230000000694 effects Effects 0.000 description 7
- 230000005684 electric field Effects 0.000 description 7
- 230000004888 barrier function Effects 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000000428 dust Substances 0.000 description 4
- 230000003647 oxidation Effects 0.000 description 4
- 238000007254 oxidation reaction Methods 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000004140 cleaning Methods 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 239000011368 organic material Substances 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000000593 degrading effect Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Images
Landscapes
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2003310031A JP2005079441A (ja) | 2003-09-02 | 2003-09-02 | 半導体装置の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2003310031A JP2005079441A (ja) | 2003-09-02 | 2003-09-02 | 半導体装置の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2005079441A true JP2005079441A (ja) | 2005-03-24 |
| JP2005079441A5 JP2005079441A5 (enExample) | 2006-10-05 |
Family
ID=34412015
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2003310031A Pending JP2005079441A (ja) | 2003-09-02 | 2003-09-02 | 半導体装置の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2005079441A (enExample) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006278820A (ja) * | 2005-03-30 | 2006-10-12 | Nikon Corp | 露光方法及び装置 |
| JP2006310376A (ja) * | 2005-04-26 | 2006-11-09 | Renesas Technology Corp | 半導体集積回路装置の製造方法 |
| JP2007284681A (ja) * | 2006-04-19 | 2007-11-01 | Samsung Electronics Co Ltd | 樹脂組成物、これを利用したパターン形成方法、及びキャパシタ形成方法 |
| JP2007311507A (ja) * | 2006-05-17 | 2007-11-29 | Mitsumi Electric Co Ltd | 半導体装置の製造方法 |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003133313A (ja) * | 2001-10-25 | 2003-05-09 | Hitachi Ltd | 半導体装置の製造方法 |
| JP2003197621A (ja) * | 2001-12-27 | 2003-07-11 | Sony Corp | 埋め込み配線の形成方法 |
| JP2004311570A (ja) * | 2003-04-03 | 2004-11-04 | Nec Electronics Corp | 半導体装置とその製造方法 |
-
2003
- 2003-09-02 JP JP2003310031A patent/JP2005079441A/ja active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003133313A (ja) * | 2001-10-25 | 2003-05-09 | Hitachi Ltd | 半導体装置の製造方法 |
| JP2003197621A (ja) * | 2001-12-27 | 2003-07-11 | Sony Corp | 埋め込み配線の形成方法 |
| JP2004311570A (ja) * | 2003-04-03 | 2004-11-04 | Nec Electronics Corp | 半導体装置とその製造方法 |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006278820A (ja) * | 2005-03-30 | 2006-10-12 | Nikon Corp | 露光方法及び装置 |
| JP2006310376A (ja) * | 2005-04-26 | 2006-11-09 | Renesas Technology Corp | 半導体集積回路装置の製造方法 |
| JP2007284681A (ja) * | 2006-04-19 | 2007-11-01 | Samsung Electronics Co Ltd | 樹脂組成物、これを利用したパターン形成方法、及びキャパシタ形成方法 |
| JP2007311507A (ja) * | 2006-05-17 | 2007-11-29 | Mitsumi Electric Co Ltd | 半導体装置の製造方法 |
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