JP2005038971A5 - - Google Patents
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- Publication number
- JP2005038971A5 JP2005038971A5 JP2003198663A JP2003198663A JP2005038971A5 JP 2005038971 A5 JP2005038971 A5 JP 2005038971A5 JP 2003198663 A JP2003198663 A JP 2003198663A JP 2003198663 A JP2003198663 A JP 2003198663A JP 2005038971 A5 JP2005038971 A5 JP 2005038971A5
- Authority
- JP
- Japan
- Prior art keywords
- wiring
- insulating film
- barrier layer
- semiconductor device
- interlayer insulating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
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- 239000010410 layer Substances 0.000 description 59
- 230000004888 barrier function Effects 0.000 description 41
- 239000011229 interlayer Substances 0.000 description 30
- 239000004065 semiconductor Substances 0.000 description 29
- 238000004519 manufacturing process Methods 0.000 description 25
- 239000000463 material Substances 0.000 description 14
- 238000000034 method Methods 0.000 description 14
- 238000007772 electroless plating Methods 0.000 description 9
- 239000002184 metal Substances 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 6
- 238000000465 moulding Methods 0.000 description 6
- 239000003054 catalyst Substances 0.000 description 5
- 229910052802 copper Inorganic materials 0.000 description 5
- 239000010949 copper Substances 0.000 description 5
- 229910052709 silver Inorganic materials 0.000 description 5
- 229910045601 alloy Inorganic materials 0.000 description 4
- 239000000956 alloy Substances 0.000 description 4
- 239000012298 atmosphere Substances 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- 229910052759 nickel Inorganic materials 0.000 description 4
- 238000007747 plating Methods 0.000 description 4
- 229910001316 Ag alloy Inorganic materials 0.000 description 3
- 229910001020 Au alloy Inorganic materials 0.000 description 3
- 229910000531 Co alloy Inorganic materials 0.000 description 3
- 229910000881 Cu alloy Inorganic materials 0.000 description 3
- 229910000990 Ni alloy Inorganic materials 0.000 description 3
- 238000009713 electroplating Methods 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 238000005498 polishing Methods 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 229910001362 Ta alloys Inorganic materials 0.000 description 2
- 229910001069 Ti alloy Inorganic materials 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 230000005012 migration Effects 0.000 description 2
- 238000013508 migration Methods 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 239000012299 nitrogen atmosphere Substances 0.000 description 2
- 229910052763 palladium Inorganic materials 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- 229910052718 tin Inorganic materials 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 238000000137 annealing Methods 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2003198663A JP2005038971A (ja) | 2003-07-17 | 2003-07-17 | 半導体装置及びその製造方法 |
| US10/893,244 US7157370B2 (en) | 2003-07-17 | 2004-07-19 | Semiconductor device and method for manufacturing the same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2003198663A JP2005038971A (ja) | 2003-07-17 | 2003-07-17 | 半導体装置及びその製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2005038971A JP2005038971A (ja) | 2005-02-10 |
| JP2005038971A5 true JP2005038971A5 (enExample) | 2006-08-24 |
Family
ID=34113600
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2003198663A Withdrawn JP2005038971A (ja) | 2003-07-17 | 2003-07-17 | 半導体装置及びその製造方法 |
Country Status (2)
| Country | Link |
|---|---|
| US (1) | US7157370B2 (enExample) |
| JP (1) | JP2005038971A (enExample) |
Families Citing this family (26)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI286814B (en) * | 2003-04-28 | 2007-09-11 | Fujitsu Ltd | Fabrication process of a semiconductor device |
| JP2006202852A (ja) * | 2005-01-18 | 2006-08-03 | Toshiba Corp | 半導体装置 |
| US7138714B2 (en) * | 2005-02-11 | 2006-11-21 | International Business Machines Corporation | Via barrier layers continuous with metal line barrier layers at notched or dielectric mesa portions in metal lines |
| TWI256105B (en) * | 2005-02-17 | 2006-06-01 | Touch Micro System Tech | Method of forming chip type low-k dielectric layer |
| US7913644B2 (en) * | 2005-09-30 | 2011-03-29 | Lam Research Corporation | Electroless deposition system |
| US7709269B2 (en) * | 2006-01-17 | 2010-05-04 | Cree, Inc. | Methods of fabricating transistors including dielectrically-supported gate electrodes |
| US7592211B2 (en) * | 2006-01-17 | 2009-09-22 | Cree, Inc. | Methods of fabricating transistors including supported gate electrodes |
| WO2007089495A1 (en) * | 2006-01-31 | 2007-08-09 | Advanced Micro Devices, Inc. | A semiconductor device comprising a metallization layer stack with a porous low-k material having an enhanced integrity |
| DE102006004429A1 (de) * | 2006-01-31 | 2007-08-02 | Advanced Micro Devices, Inc., Sunnyvale | Halbleiterbauelement mit einem Metallisierungsschichtstapel mit einem porösen Material mit kleinem ε mit einer erhöhten Integrität |
| KR100827437B1 (ko) * | 2006-05-22 | 2008-05-06 | 삼성전자주식회사 | Ｍｉｍ 커패시터를 구비하는 반도체 집적 회로 장치 및이의 제조 방법 |
| KR100727691B1 (ko) * | 2006-06-20 | 2007-06-13 | 동부일렉트로닉스 주식회사 | 반도체 소자의 금속 배선 제조 방법 |
| US20080054466A1 (en) * | 2006-08-31 | 2008-03-06 | Kabushiki Kaisha Toshiba | Semiconductor device and method of manufacturing semiconductor device |
| JP4539684B2 (ja) * | 2007-06-21 | 2010-09-08 | 株式会社デンソー | 炭化珪素半導体装置およびその製造方法 |
| US20130217225A1 (en) * | 2010-08-31 | 2013-08-22 | Tokyo Electron Limited | Method for manufacturing semiconductor device |
| US8518818B2 (en) | 2011-09-16 | 2013-08-27 | Taiwan Semiconductor Manufacturing Co., Ltd. | Reverse damascene process |
| JP2014236177A (ja) * | 2013-06-05 | 2014-12-15 | 日本電信電話株式会社 | 配線構造とその形成方法 |
| US9209082B2 (en) * | 2014-01-03 | 2015-12-08 | International Business Machines Corporation | Methods of localized hardening of dicing channel by applying localized heat in wafer kerf |
| EP3172761B1 (en) | 2014-07-25 | 2021-09-22 | Intel Corporation | Tungsten alloys in semiconductor devices |
| US9431343B1 (en) | 2015-03-11 | 2016-08-30 | Samsung Electronics Co., Ltd. | Stacked damascene structures for microelectronic devices |
| CN106409754B (zh) * | 2015-07-29 | 2020-03-10 | 中芯国际集成电路制造(上海)有限公司 | 半导体结构及其制造方法 |
| WO2017087005A1 (en) * | 2015-11-21 | 2017-05-26 | Intel Corporation | Metallization stacks with enclosed vias |
| US9899260B2 (en) * | 2016-01-21 | 2018-02-20 | Micron Technology, Inc. | Method for fabricating a semiconductor device |
| US10535560B2 (en) * | 2017-07-18 | 2020-01-14 | Taiwan Semiconductor Manufacturing Co., Ltd. | Interconnection structure of semiconductor device |
| CN109411406A (zh) * | 2017-08-18 | 2019-03-01 | 中芯国际集成电路制造(上海)有限公司 | 半导体结构及其形成方法 |
| US10600656B2 (en) * | 2017-11-21 | 2020-03-24 | International Business Machines Corporation | Directed self-assembly for copper patterning |
| WO2019135985A1 (en) * | 2018-01-03 | 2019-07-11 | Corning Incorporated | Methods for making electrodes and providing electrical connections in sensors |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5674787A (en) * | 1996-01-16 | 1997-10-07 | Sematech, Inc. | Selective electroless copper deposited interconnect plugs for ULSI applications |
| US5695810A (en) * | 1996-11-20 | 1997-12-09 | Cornell Research Foundation, Inc. | Use of cobalt tungsten phosphide as a barrier material for copper metallization |
| US6114243A (en) * | 1999-11-15 | 2000-09-05 | Chartered Semiconductor Manufacturing Ltd | Method to avoid copper contamination on the sidewall of a via or a dual damascene structure |
| US6815329B2 (en) * | 2000-02-08 | 2004-11-09 | International Business Machines Corporation | Multilayer interconnect structure containing air gaps and method for making |
| US6555909B1 (en) * | 2001-01-11 | 2003-04-29 | Advanced Micro Devices, Inc. | Seedless barrier layers in integrated circuits and a method of manufacture therefor |
| US6555467B2 (en) * | 2001-09-28 | 2003-04-29 | Sharp Laboratories Of America, Inc. | Method of making air gaps copper interconnect |
| JP3778045B2 (ja) * | 2001-10-09 | 2006-05-24 | 三菱電機株式会社 | 低誘電率材料の製造方法および低誘電率材料、並びにこの低誘電率材料を用いた絶縁膜および半導体装置 |
| JP4555540B2 (ja) * | 2002-07-08 | 2010-10-06 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
| TWI313066B (en) * | 2003-02-11 | 2009-08-01 | United Microelectronics Corp | Capacitor in an interconnect system and method of manufacturing thereof |
-
2003
- 2003-07-17 JP JP2003198663A patent/JP2005038971A/ja not_active Withdrawn
-
2004
- 2004-07-19 US US10/893,244 patent/US7157370B2/en not_active Expired - Lifetime
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