JP2005019972A - Ｉｉｉ族窒化物半導体素子の製造方法 - Google Patents
Ｉｉｉ族窒化物半導体素子の製造方法 Download PDFInfo
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- JP2005019972A JP2005019972A JP2004155506A JP2004155506A JP2005019972A JP 2005019972 A JP2005019972 A JP 2005019972A JP 2004155506 A JP2004155506 A JP 2004155506A JP 2004155506 A JP2004155506 A JP 2004155506A JP 2005019972 A JP2005019972 A JP 2005019972A
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- Prior art keywords
- group iii
- iii nitride
- nitride semiconductor
- substrate
- film
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 78
- 150000004767 nitrides Chemical class 0.000 title claims abstract description 63
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 28
- 239000000758 substrate Substances 0.000 claims abstract description 62
- 238000000034 method Methods 0.000 claims abstract description 56
- 239000013078 crystal Substances 0.000 claims abstract description 43
- 238000005229 chemical vapour deposition Methods 0.000 claims abstract description 28
- 238000004050 hot filament vapor deposition Methods 0.000 claims abstract description 19
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 37
- 230000015572 biosynthetic process Effects 0.000 claims description 15
- 238000005268 plasma chemical vapour deposition Methods 0.000 abstract description 8
- 238000010438 heat treatment Methods 0.000 abstract description 7
- 239000003054 catalyst Substances 0.000 abstract description 3
- 239000000463 material Substances 0.000 abstract description 3
- 238000000151 deposition Methods 0.000 abstract description 2
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 32
- 229910002601 GaN Inorganic materials 0.000 description 31
- 239000007789 gas Substances 0.000 description 14
- 229910052594 sapphire Inorganic materials 0.000 description 12
- 239000010980 sapphire Substances 0.000 description 12
- 150000002500 ions Chemical class 0.000 description 8
- 238000005192 partition Methods 0.000 description 8
- 239000000523 sample Substances 0.000 description 7
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 6
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- 239000012159 carrier gas Substances 0.000 description 6
- 238000005530 etching Methods 0.000 description 6
- 230000004888 barrier function Effects 0.000 description 5
- 238000005253 cladding Methods 0.000 description 5
- 238000004140 cleaning Methods 0.000 description 5
- 239000002994 raw material Substances 0.000 description 5
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 4
- 239000011777 magnesium Substances 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 230000001681 protective effect Effects 0.000 description 4
- 229910021529 ammonia Inorganic materials 0.000 description 3
- 125000004429 atom Chemical group 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 238000001312 dry etching Methods 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- 230000007935 neutral effect Effects 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 3
- RGGPNXQUMRMPRA-UHFFFAOYSA-N triethylgallium Chemical compound CC[Ga](CC)CC RGGPNXQUMRMPRA-UHFFFAOYSA-N 0.000 description 3
- IBEFSUTVZWZJEL-UHFFFAOYSA-N trimethylindium Chemical compound C[In](C)C IBEFSUTVZWZJEL-UHFFFAOYSA-N 0.000 description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 3
- 239000002253 acid Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 238000000354 decomposition reaction Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000000605 extraction Methods 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 2
- 238000001451 molecular beam epitaxy Methods 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 2
- 238000000927 vapour-phase epitaxy Methods 0.000 description 2
- 229910017083 AlN Inorganic materials 0.000 description 1
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 238000002441 X-ray diffraction Methods 0.000 description 1
- 230000003213 activating effect Effects 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000005587 bubbling Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 238000004581 coalescence Methods 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 229910001882 dioxygen Inorganic materials 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000008187 granular material Substances 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- QBJCZLXULXFYCK-UHFFFAOYSA-N magnesium;cyclopenta-1,3-diene Chemical compound [Mg+2].C1C=CC=[C-]1.C1C=CC=[C-]1 QBJCZLXULXFYCK-UHFFFAOYSA-N 0.000 description 1
- 229910003465 moissanite Inorganic materials 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000004611 spectroscopical analysis Methods 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000000992 sputter etching Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000001947 vapour-phase growth Methods 0.000 description 1
- 238000009423 ventilation Methods 0.000 description 1
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Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2004155506A JP2005019972A (ja) | 2003-05-30 | 2004-05-26 | Ｉｉｉ族窒化物半導体素子の製造方法 |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2003153756 | 2003-05-30 | ||
| JP2004155506A JP2005019972A (ja) | 2003-05-30 | 2004-05-26 | Ｉｉｉ族窒化物半導体素子の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2005019972A true JP2005019972A (ja) | 2005-01-20 |
| JP2005019972A5 JP2005019972A5 (enExample) | 2007-06-07 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2004155506A Pending JP2005019972A (ja) | 2003-05-30 | 2004-05-26 | Ｉｉｉ族窒化物半導体素子の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2005019972A (enExample) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007258376A (ja) * | 2006-03-22 | 2007-10-04 | Rohm Co Ltd | 半導体素子の製造方法 |
| JP2009051197A (ja) * | 2007-05-29 | 2009-03-12 | Canon Inc | 液体吐出ヘッド用基体及びその製造方法、並びに該基体を用いる液体吐出ヘッド |
| JP2022096917A (ja) * | 2020-12-18 | 2022-06-30 | 日亜化学工業株式会社 | 発光素子の製造方法 |
| CN116936701A (zh) * | 2023-09-19 | 2023-10-24 | 江西兆驰半导体有限公司 | 一种发光二极管外延片及制备方法、led芯片 |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06260434A (ja) * | 1993-03-04 | 1994-09-16 | Nissin Electric Co Ltd | プラズマｃｖｄ装置 |
| JPH10209151A (ja) * | 1997-01-20 | 1998-08-07 | Nec Corp | 半導体装置の製造方法 |
| JPH1131864A (ja) * | 1997-07-11 | 1999-02-02 | Nec Corp | 低転位窒化ガリウムの結晶成長方法 |
| JP2000216163A (ja) * | 1999-01-20 | 2000-08-04 | Fujitsu Ltd | 半導体装置の製造方法 |
| JP2000345349A (ja) * | 1999-06-04 | 2000-12-12 | Anelva Corp | Ｃｖｄ装置 |
| JP2002204035A (ja) * | 2001-01-04 | 2002-07-19 | Sharp Corp | 窒化物半導体発光素子とこれを含む装置 |
-
2004
- 2004-05-26 JP JP2004155506A patent/JP2005019972A/ja active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06260434A (ja) * | 1993-03-04 | 1994-09-16 | Nissin Electric Co Ltd | プラズマｃｖｄ装置 |
| JPH10209151A (ja) * | 1997-01-20 | 1998-08-07 | Nec Corp | 半導体装置の製造方法 |
| JPH1131864A (ja) * | 1997-07-11 | 1999-02-02 | Nec Corp | 低転位窒化ガリウムの結晶成長方法 |
| JP2000216163A (ja) * | 1999-01-20 | 2000-08-04 | Fujitsu Ltd | 半導体装置の製造方法 |
| JP2000345349A (ja) * | 1999-06-04 | 2000-12-12 | Anelva Corp | Ｃｖｄ装置 |
| JP2002204035A (ja) * | 2001-01-04 | 2002-07-19 | Sharp Corp | 窒化物半導体発光素子とこれを含む装置 |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007258376A (ja) * | 2006-03-22 | 2007-10-04 | Rohm Co Ltd | 半導体素子の製造方法 |
| JP2009051197A (ja) * | 2007-05-29 | 2009-03-12 | Canon Inc | 液体吐出ヘッド用基体及びその製造方法、並びに該基体を用いる液体吐出ヘッド |
| JP2022096917A (ja) * | 2020-12-18 | 2022-06-30 | 日亜化学工業株式会社 | 発光素子の製造方法 |
| JP7223941B2 (ja) | 2020-12-18 | 2023-02-17 | 日亜化学工業株式会社 | 発光素子の製造方法 |
| US12159959B2 (en) | 2020-12-18 | 2024-12-03 | Nichia Corporation | Method for manufacturing light-emitting element |
| CN116936701A (zh) * | 2023-09-19 | 2023-10-24 | 江西兆驰半导体有限公司 | 一种发光二极管外延片及制备方法、led芯片 |
| CN116936701B (zh) * | 2023-09-19 | 2023-12-01 | 江西兆驰半导体有限公司 | 一种发光二极管外延片及制备方法、led芯片 |
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