JP2005019966A - 半導体装置及びその製造方法 - Google Patents

半導体装置及びその製造方法 Download PDF

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Publication number
JP2005019966A
JP2005019966A JP2004145872A JP2004145872A JP2005019966A JP 2005019966 A JP2005019966 A JP 2005019966A JP 2004145872 A JP2004145872 A JP 2004145872A JP 2004145872 A JP2004145872 A JP 2004145872A JP 2005019966 A JP2005019966 A JP 2005019966A
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JP
Japan
Prior art keywords
semiconductor
wafer
sealed
semiconductor device
cap
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JP2004145872A
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English (en)
Japanese (ja)
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JP2005019966A5 (https=
Inventor
Osamu Ikeda
修 池田
Toshiyuki Okoda
敏幸 大古田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sanyo Electric Co Ltd
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Sanyo Electric Co Ltd
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Publication date
Application filed by Sanyo Electric Co Ltd filed Critical Sanyo Electric Co Ltd
Priority to JP2004145872A priority Critical patent/JP2005019966A/ja
Publication of JP2005019966A publication Critical patent/JP2005019966A/ja
Publication of JP2005019966A5 publication Critical patent/JP2005019966A5/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/804—Containers or encapsulations

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  • Light Receiving Elements (AREA)
  • Solid State Image Pick-Up Elements (AREA)
JP2004145872A 2003-06-06 2004-05-17 半導体装置及びその製造方法 Pending JP2005019966A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2004145872A JP2005019966A (ja) 2003-06-06 2004-05-17 半導体装置及びその製造方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2003161634 2003-06-06
JP2004145872A JP2005019966A (ja) 2003-06-06 2004-05-17 半導体装置及びその製造方法

Publications (2)

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JP2005019966A true JP2005019966A (ja) 2005-01-20
JP2005019966A5 JP2005019966A5 (https=) 2007-06-14

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JP2004145872A Pending JP2005019966A (ja) 2003-06-06 2004-05-17 半導体装置及びその製造方法

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Cited By (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005241457A (ja) * 2004-02-26 2005-09-08 Hamamatsu Photonics Kk 赤外線センサ及びその製造方法
WO2006080388A1 (ja) * 2005-01-28 2006-08-03 Matsushita Electric Industrial Co., Ltd. 電子素子パッケージの製造方法および電子素子パッケージ
JP2006332576A (ja) * 2005-04-25 2006-12-07 Matsushita Electric Works Ltd 半導体装置およびその製造方法
EP1854760A2 (en) 2006-05-11 2007-11-14 Olympus Corporation Semiconductor device and method of manufacturing the same
WO2008023824A1 (fr) * 2006-08-25 2008-02-28 Sanyo Electric Co., Ltd. Dispositif à semi-conducteur et son procédé de fabrication
JP2008528987A (ja) * 2005-01-26 2008-07-31 アナログ・デバイシズ・インコーポレーテッド センサ
EP1978558A1 (en) 2007-04-03 2008-10-08 Shinko Electric Industries Co., Ltd. Substrate and method for manufacturing the same
US7633150B2 (en) 2005-07-13 2009-12-15 Shinko Electric Industries Co., Ltd. Semiconductor device and method for manufacturing semiconductor device
US7754983B2 (en) 2005-04-27 2010-07-13 Shinko Electric Industries Co., Ltd. Electronic parts packaging structure and method of manufacturing the same
JP2010206227A (ja) * 2005-04-25 2010-09-16 Panasonic Electric Works Co Ltd 半導体装置およびその製造方法
US8148811B2 (en) 2006-08-25 2012-04-03 Semiconductor Components Industries, Llc Semiconductor device and manufacturing method thereof
JP2012517716A (ja) * 2009-02-11 2012-08-02 メギカ・コーポレイション イメージおよび光センサチップパッケージ
EP2574973A2 (en) 2011-09-29 2013-04-03 Stanley Electric Co., Ltd. Optical deflector apparatus including optical deflector chip sandwiched by two substrates
EP2574974A1 (en) 2011-09-29 2013-04-03 Stanley Electric Co., Ltd. Method of manufacturing optical deflector by forming dicing street with double etching
JP2013080923A (ja) * 2011-09-30 2013-05-02 General Electric Co <Ge> 向上した熱散逸能力を有する３ｄ集積電子デバイス構造
US8653612B2 (en) 2006-08-25 2014-02-18 Sanyo Semiconductor Co., Ltd. Semiconductor device

Cited By (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005241457A (ja) * 2004-02-26 2005-09-08 Hamamatsu Photonics Kk 赤外線センサ及びその製造方法
JP2008528987A (ja) * 2005-01-26 2008-07-31 アナログ・デバイシズ・インコーポレーテッド センサ
US7615406B2 (en) 2005-01-28 2009-11-10 Panasonic Corporation Electronic device package manufacturing method and electronic device package
WO2006080388A1 (ja) * 2005-01-28 2006-08-03 Matsushita Electric Industrial Co., Ltd. 電子素子パッケージの製造方法および電子素子パッケージ
JP4588753B2 (ja) * 2005-01-28 2010-12-01 パナソニック株式会社 電子素子パッケージの製造方法および電子素子パッケージ
JPWO2006080388A1 (ja) * 2005-01-28 2008-06-19 松下電器産業株式会社 電子素子パッケージの製造方法および電子素子パッケージ
JP2006332576A (ja) * 2005-04-25 2006-12-07 Matsushita Electric Works Ltd 半導体装置およびその製造方法
JP2010206227A (ja) * 2005-04-25 2010-09-16 Panasonic Electric Works Co Ltd 半導体装置およびその製造方法
US7754983B2 (en) 2005-04-27 2010-07-13 Shinko Electric Industries Co., Ltd. Electronic parts packaging structure and method of manufacturing the same
US7633150B2 (en) 2005-07-13 2009-12-15 Shinko Electric Industries Co., Ltd. Semiconductor device and method for manufacturing semiconductor device
EP1854760A2 (en) 2006-05-11 2007-11-14 Olympus Corporation Semiconductor device and method of manufacturing the same
US7535097B2 (en) 2006-05-11 2009-05-19 Olympus Corporation Semiconductor device and method of manufacturing the same
JP5270349B2 (ja) * 2006-08-25 2013-08-21 セミコンダクター・コンポーネンツ・インダストリーズ・リミテッド・ライアビリティ・カンパニー 半導体装置及びその製造方法
US8148811B2 (en) 2006-08-25 2012-04-03 Semiconductor Components Industries, Llc Semiconductor device and manufacturing method thereof
WO2008023824A1 (fr) * 2006-08-25 2008-02-28 Sanyo Electric Co., Ltd. Dispositif à semi-conducteur et son procédé de fabrication
US9034729B2 (en) 2006-08-25 2015-05-19 Semiconductor Components Industries, Llc Semiconductor device and method of manufacturing the same
US8653612B2 (en) 2006-08-25 2014-02-18 Sanyo Semiconductor Co., Ltd. Semiconductor device
US8481863B2 (en) 2007-04-03 2013-07-09 Shinko Electric Industries Co., Ltd. Substrate and method for manufacturing the same
EP1978558A1 (en) 2007-04-03 2008-10-08 Shinko Electric Industries Co., Ltd. Substrate and method for manufacturing the same
JP2008258322A (ja) * 2007-04-03 2008-10-23 Shinko Electric Ind Co Ltd 基板及びその製造方法
JP2012517716A (ja) * 2009-02-11 2012-08-02 メギカ・コーポレイション イメージおよび光センサチップパッケージ
US8853754B2 (en) 2009-02-11 2014-10-07 Qualcomm Incorporated Image and light sensor chip packages
EP2574974A1 (en) 2011-09-29 2013-04-03 Stanley Electric Co., Ltd. Method of manufacturing optical deflector by forming dicing street with double etching
US8790936B2 (en) 2011-09-29 2014-07-29 Stanley Electric Co., Ltd. Method for manufacturing optical deflector for forming dicing street with double etching
US8937757B2 (en) 2011-09-29 2015-01-20 Stanley Electric Co., Ltd. Optical deflector apparatus including optical deflector chip sandwhiched by two substrates
EP2574973A2 (en) 2011-09-29 2013-04-03 Stanley Electric Co., Ltd. Optical deflector apparatus including optical deflector chip sandwiched by two substrates
JP2013080923A (ja) * 2011-09-30 2013-05-02 General Electric Co <Ge> 向上した熱散逸能力を有する３ｄ集積電子デバイス構造

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