JP2004533539A - 物理蒸着構成材及び形成方法 - Google Patents

物理蒸着構成材及び形成方法 Download PDF

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Publication number
JP2004533539A
JP2004533539A JP2002566000A JP2002566000A JP2004533539A JP 2004533539 A JP2004533539 A JP 2004533539A JP 2002566000 A JP2002566000 A JP 2002566000A JP 2002566000 A JP2002566000 A JP 2002566000A JP 2004533539 A JP2004533539 A JP 2004533539A
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Japan
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component
cold
stress
sectional area
strip
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JP2002566000A
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Japanese (ja)
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JP2004533539A5 (enExample
Inventor
クーパー，マシュー・エス
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Honeywell International Inc
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Honeywell International Inc
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Publication date
Application filed by Honeywell International Inc filed Critical Honeywell International Inc
Publication of JP2004533539A publication Critical patent/JP2004533539A/ja
Publication of JP2004533539A5 publication Critical patent/JP2004533539A5/ja
Pending legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy

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  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
JP2002566000A 2000-10-27 2001-10-26 物理蒸着構成材及び形成方法 Pending JP2004533539A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/699,897 US7041204B1 (en) 2000-10-27 2000-10-27 Physical vapor deposition components and methods of formation
PCT/US2001/051243 WO2002066699A2 (en) 2000-10-27 2001-10-26 Physical vapor deposition components and methods of formation

Publications (2)

Publication Number Publication Date
JP2004533539A true JP2004533539A (ja) 2004-11-04
JP2004533539A5 JP2004533539A5 (enExample) 2006-10-19

Family

ID=24811380

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002566000A Pending JP2004533539A (ja) 2000-10-27 2001-10-26 物理蒸着構成材及び形成方法

Country Status (7)

Country Link
US (2) US7041204B1 (enExample)
EP (1) EP1501960A2 (enExample)
JP (1) JP2004533539A (enExample)
KR (1) KR100549560B1 (enExample)
CN (1) CN1551927A (enExample)
AU (1) AU2002255471A1 (enExample)
WO (1) WO2002066699A2 (enExample)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030002043A1 (en) * 2001-04-10 2003-01-02 Kla-Tencor Corporation Periodic patterns and technique to control misalignment
US20040129559A1 (en) * 2002-04-12 2004-07-08 Misner Josh W. Diffusion bonded assemblies and fabrication methods
US20080078268A1 (en) 2006-10-03 2008-04-03 H.C. Starck Inc. Process for preparing metal powders having low oxygen content, powders so-produced and uses thereof
US7776166B2 (en) * 2006-12-05 2010-08-17 Praxair Technology, Inc. Texture and grain size controlled hollow cathode magnetron targets and method of manufacture
US20080145688A1 (en) 2006-12-13 2008-06-19 H.C. Starck Inc. Method of joining tantalum clade steel structures
US9279178B2 (en) 2007-04-27 2016-03-08 Honeywell International Inc. Manufacturing design and processing methods and apparatus for sputtering targets
US8197894B2 (en) 2007-05-04 2012-06-12 H.C. Starck Gmbh Methods of forming sputtering targets
US8246903B2 (en) 2008-09-09 2012-08-21 H.C. Starck Inc. Dynamic dehydriding of refractory metal powders
US8734896B2 (en) 2011-09-29 2014-05-27 H.C. Starck Inc. Methods of manufacturing high-strength large-area sputtering targets

Family Cites Families (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4481470A (en) 1981-07-29 1984-11-06 The United States Of America As Represented By The United States Department Of Energy Method for determining the hardness of strain hardening articles of tungsten-nickel-iron alloy
JPS59108970A (ja) 1982-12-13 1984-06-23 Nippon Steel Corp 鋼材の磁気特性測定方法
JPS6314864A (ja) 1986-07-08 1988-01-22 Ulvac Corp Ｃｏ基合金スパツタタ−ゲツトおよびその製造法
JPS63270461A (ja) 1986-12-26 1988-11-08 Teijin Ltd 対向ターゲット式スパッタ装置
US5087297A (en) 1991-01-17 1992-02-11 Johnson Matthey Inc. Aluminum target for magnetron sputtering and method of making same
JPH06104120A (ja) 1992-08-03 1994-04-15 Hitachi Metals Ltd 磁気記録媒体用スパッタリングターゲットおよびその製造方法
US5282947A (en) 1992-08-13 1994-02-01 Vlsi Technology, Inc. Magnet assembly for enhanced sputter target erosion
JP2857015B2 (ja) 1993-04-08 1999-02-10 株式会社ジャパンエナジー 高純度アルミニウムまたはその合金からなるスパッタリングターゲット
US5590389A (en) 1994-12-23 1996-12-31 Johnson Matthey Electronics, Inc. Sputtering target with ultra-fine, oriented grains and method of making same
JPH08253859A (ja) 1995-03-16 1996-10-01 Sumitomo Metal Mining Co Ltd スパッタリング装置
JP3413782B2 (ja) 1995-03-31 2003-06-09 日立金属株式会社 スパッタリング用チタンタ−ゲットおよびその製造方法
US5741377A (en) 1995-04-10 1998-04-21 Martin Marietta Energy Systems, Inc. Structures having enhanced biaxial texture and method of fabricating same
US5658442A (en) 1996-03-07 1997-08-19 Applied Materials, Inc. Target and dark space shield for a physical vapor deposition system
FR2756572B1 (fr) 1996-12-04 1999-01-08 Pechiney Aluminium Alliages d'aluminium a temperature de recristallisation elevee utilisee dans les cibles de pulverisation cathodiques
US6123783A (en) 1997-02-06 2000-09-26 Heraeus, Inc. Magnetic data-storage targets and methods for preparation
WO1998044360A2 (en) 1997-04-01 1998-10-08 Redcliffe Magtronics Ltd. An apparatus and method of measuring the magnetic field distribution of a magnetic sample
CA2203601C (en) 1997-04-24 2004-03-16 James R. Booker Apparatus and method of detecting loss of cross-sectional area of magnetic metallic strength members used in conductors such as aluminum conductor steel reinforced ("acsr") conductors
JP3403918B2 (ja) 1997-06-02 2003-05-06 株式会社ジャパンエナジー 高純度銅スパッタリングタ−ゲットおよび薄膜
US5993621A (en) 1997-07-11 1999-11-30 Johnson Matthey Electronics, Inc. Titanium sputtering target
US6391172B2 (en) 1997-08-26 2002-05-21 The Alta Group, Inc. High purity cobalt sputter target and process of manufacturing the same
DE59912726D1 (de) 1998-03-30 2005-12-08 Sentron Ag Zug Magnetfeldsensor
US6086725A (en) * 1998-04-02 2000-07-11 Applied Materials, Inc. Target for use in magnetron sputtering of nickel for forming metallization films having consistent uniformity through life
US6323055B1 (en) 1998-05-27 2001-11-27 The Alta Group, Inc. Tantalum sputtering target and method of manufacture
US6071389A (en) 1998-08-21 2000-06-06 Tosoh Smd, Inc. Diffusion bonded sputter target assembly and method of making
EP1147241B1 (en) 1998-12-29 2009-01-07 Tosoh Smd, Inc. Diffusion bonded sputter target assembly and method of making same
US6342114B1 (en) 1999-03-31 2002-01-29 Praxair S.T. Technology, Inc. Nickel/vanadium sputtering target with ultra-low alpha emission
US6258217B1 (en) 1999-09-29 2001-07-10 Plasma-Therm, Inc. Rotating magnet array and sputter source
US6299740B1 (en) 2000-01-19 2001-10-09 Veeco Instrument, Inc. Sputtering assembly and target therefor
US6454911B1 (en) 2000-06-01 2002-09-24 Honeywell International Inc. Method and apparatus for determining the pass through flux of magnetic materials
WO2002086183A1 (en) 2001-04-19 2002-10-31 Honeywell International Inc. Diffusion bonded assemblies and fabrication methods

Also Published As

Publication number Publication date
CN1551927A (zh) 2004-12-01
KR100549560B1 (ko) 2006-02-08
KR20030045147A (ko) 2003-06-09
AU2002255471A1 (en) 2002-09-04
US7041204B1 (en) 2006-05-09
WO2002066699A3 (en) 2004-12-09
EP1501960A2 (en) 2005-02-02
WO2002066699A2 (en) 2002-08-29
US20040221930A1 (en) 2004-11-11

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