JP2004528707A5 - - Google Patents

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Publication number
JP2004528707A5
JP2004528707A5 JP2002560178A JP2002560178A JP2004528707A5 JP 2004528707 A5 JP2004528707 A5 JP 2004528707A5 JP 2002560178 A JP2002560178 A JP 2002560178A JP 2002560178 A JP2002560178 A JP 2002560178A JP 2004528707 A5 JP2004528707 A5 JP 2004528707A5
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JP
Japan
Prior art keywords
angstroms
layer
substrate
insulating layer
oxygen
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2002560178A
Other languages
English (en)
Japanese (ja)
Other versions
JP2004528707A (ja
Filing date
Publication date
Priority claimed from US09/767,787 external-priority patent/US20020098664A1/en
Application filed filed Critical
Publication of JP2004528707A publication Critical patent/JP2004528707A/ja
Publication of JP2004528707A5 publication Critical patent/JP2004528707A5/ja
Pending legal-status Critical Current

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JP2002560178A 2001-01-23 2002-01-10 Ｓｏｉを形成する方法 Pending JP2004528707A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/767,787 US20020098664A1 (en) 2001-01-23 2001-01-23 Method of producing SOI materials
PCT/US2002/000802 WO2002059946A2 (en) 2001-01-23 2002-01-10 Method of producing soi materials

Publications (2)

Publication Number Publication Date
JP2004528707A JP2004528707A (ja) 2004-09-16
JP2004528707A5 true JP2004528707A5 (enExample) 2005-12-22

Family

ID=25080577

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002560178A Pending JP2004528707A (ja) 2001-01-23 2002-01-10 Ｓｏｉを形成する方法

Country Status (6)

Country Link
US (1) US20020098664A1 (enExample)
EP (1) EP1354339A2 (enExample)
JP (1) JP2004528707A (enExample)
KR (1) KR20030076627A (enExample)
CN (1) CN1528010A (enExample)
WO (1) WO2002059946A2 (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005333052A (ja) * 2004-05-21 2005-12-02 Sony Corp Ｓｉｍｏｘ基板及びその製造方法及びｓｉｍｏｘ基板を用いた半導体装置及びｓｉｍｏｘ基板を用いた電気光学表示装置の製造方法
CN100454483C (zh) * 2007-04-20 2009-01-21 中国电子科技集团公司第四十八研究所 一种离子注入厚膜soi晶片材料的制备方法
US7619283B2 (en) * 2007-04-20 2009-11-17 Corning Incorporated Methods of fabricating glass-based substrates and apparatus employing same
CN102386123B (zh) * 2011-07-29 2013-11-13 上海新傲科技股份有限公司 制备具有均匀厚度器件层的衬底的方法
US8575694B2 (en) 2012-02-13 2013-11-05 Taiwan Semiconductor Manufacturing Company, Ltd. Insulated gate bipolar transistor structure having low substrate leakage
JP2016224045A (ja) * 2015-05-29 2016-12-28 セイコーエプソン株式会社 抵抗素子の製造方法、圧力センサー素子の製造方法、圧力センサー素子、圧力センサー、高度計、電子機器および移動体

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5661043A (en) * 1994-07-25 1997-08-26 Rissman; Paul Forming a buried insulator layer using plasma source ion implantation
US5710057A (en) * 1996-07-12 1998-01-20 Kenney; Donald M. SOI fabrication method
JPH11307455A (ja) * 1998-04-20 1999-11-05 Sony Corp 基板およびその製造方法
JP2000294513A (ja) * 1999-04-06 2000-10-20 Nec Corp Ｓｉ基板の酸化膜形成方法

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