JP2004528707A - Ｓｏｉを形成する方法 - Google Patents

Ｓｏｉを形成する方法 Download PDF

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Publication number
JP2004528707A
JP2004528707A JP2002560178A JP2002560178A JP2004528707A JP 2004528707 A JP2004528707 A JP 2004528707A JP 2002560178 A JP2002560178 A JP 2002560178A JP 2002560178 A JP2002560178 A JP 2002560178A JP 2004528707 A JP2004528707 A JP 2004528707A
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JP
Japan
Prior art keywords
substrate
layer
silicon
soi
insulating layer
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Pending
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JP2002560178A
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English (en)
Japanese (ja)
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JP2004528707A5 (https=
Inventor
ファング，ツィウェイ
Original Assignee
バリアン・セミコンダクター・エクイップメント・アソシエイツ・インコーポレイテッド
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Application filed by バリアン・セミコンダクター・エクイップメント・アソシエイツ・インコーポレイテッド filed Critical バリアン・セミコンダクター・エクイップメント・アソシエイツ・インコーポレイテッド
Publication of JP2004528707A publication Critical patent/JP2004528707A/ja
Publication of JP2004528707A5 publication Critical patent/JP2004528707A5/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/19—Preparing inhomogeneous wafers
    • H10P90/1904—Preparing vertically inhomogeneous wafers
    • H10P90/1906—Preparing SOI wafers
    • H10P90/1912—Preparing SOI wafers using selective deposition, e.g. epitaxial lateral overgrowth [ELO] or selective deposition of single crystal silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/19—Preparing inhomogeneous wafers
    • H10P90/1904—Preparing vertically inhomogeneous wafers
    • H10P90/1906—Preparing SOI wafers
    • H10P90/1908—Preparing SOI wafers using silicon implanted buried insulating layers, e.g. oxide layers [SIMOX]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/10—Isolation regions comprising dielectric materials
    • H10W10/181—Semiconductor-on-insulator [SOI] isolation regions, e.g. buried oxide regions of SOI wafers

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  • Element Separation (AREA)
  • Recrystallisation Techniques (AREA)
JP2002560178A 2001-01-23 2002-01-10 Ｓｏｉを形成する方法 Pending JP2004528707A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/767,787 US20020098664A1 (en) 2001-01-23 2001-01-23 Method of producing SOI materials
PCT/US2002/000802 WO2002059946A2 (en) 2001-01-23 2002-01-10 Method of producing soi materials

Publications (2)

Publication Number Publication Date
JP2004528707A true JP2004528707A (ja) 2004-09-16
JP2004528707A5 JP2004528707A5 (https=) 2005-12-22

Family

ID=25080577

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002560178A Pending JP2004528707A (ja) 2001-01-23 2002-01-10 Ｓｏｉを形成する方法

Country Status (6)

Country Link
US (1) US20020098664A1 (https=)
EP (1) EP1354339A2 (https=)
JP (1) JP2004528707A (https=)
KR (1) KR20030076627A (https=)
CN (1) CN1528010A (https=)
WO (1) WO2002059946A2 (https=)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005333052A (ja) * 2004-05-21 2005-12-02 Sony Corp Ｓｉｍｏｘ基板及びその製造方法及びｓｉｍｏｘ基板を用いた半導体装置及びｓｉｍｏｘ基板を用いた電気光学表示装置の製造方法
US7619283B2 (en) * 2007-04-20 2009-11-17 Corning Incorporated Methods of fabricating glass-based substrates and apparatus employing same
CN100454483C (zh) * 2007-04-20 2009-01-21 中国电子科技集团公司第四十八研究所 一种离子注入厚膜soi晶片材料的制备方法
CN102386123B (zh) * 2011-07-29 2013-11-13 上海新傲科技股份有限公司 制备具有均匀厚度器件层的衬底的方法
US8575694B2 (en) 2012-02-13 2013-11-05 Taiwan Semiconductor Manufacturing Company, Ltd. Insulated gate bipolar transistor structure having low substrate leakage
JP2016224045A (ja) * 2015-05-29 2016-12-28 セイコーエプソン株式会社 抵抗素子の製造方法、圧力センサー素子の製造方法、圧力センサー素子、圧力センサー、高度計、電子機器および移動体

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0845920A (ja) * 1994-07-25 1996-02-16 Hewlett Packard Co <Hp> 半導体基板に絶縁物層を形成する方法
US5710057A (en) * 1996-07-12 1998-01-20 Kenney; Donald M. SOI fabrication method
JPH11307455A (ja) * 1998-04-20 1999-11-05 Sony Corp 基板およびその製造方法
JP2000294513A (ja) * 1999-04-06 2000-10-20 Nec Corp Ｓｉ基板の酸化膜形成方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0845920A (ja) * 1994-07-25 1996-02-16 Hewlett Packard Co <Hp> 半導体基板に絶縁物層を形成する方法
US5710057A (en) * 1996-07-12 1998-01-20 Kenney; Donald M. SOI fabrication method
JPH11307455A (ja) * 1998-04-20 1999-11-05 Sony Corp 基板およびその製造方法
JP2000294513A (ja) * 1999-04-06 2000-10-20 Nec Corp Ｓｉ基板の酸化膜形成方法

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
H. W. LAM, ET. AL.: ""SILICON-ON-INSULATOR BY OXGEN ION IMPLANTATION"", JOURNAL OF CRYSTAL GROWTH, vol. 63, JPNX007010370, 1983, pages 554 - 558, ISSN: 0000824332 *
前田和夫著, 「最新ＬＳＩプロセス技術」, JPNX007010371, 20 April 1988 (1988-04-20), ISSN: 0000824333 *

Also Published As

Publication number Publication date
WO2002059946A2 (en) 2002-08-01
EP1354339A2 (en) 2003-10-22
WO2002059946A8 (en) 2003-10-09
US20020098664A1 (en) 2002-07-25
KR20030076627A (ko) 2003-09-26
CN1528010A (zh) 2004-09-08
WO2002059946A3 (en) 2003-02-20

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