JP2004363572A - 半導体発光素子および発光ダイオード - Google Patents
半導体発光素子および発光ダイオード Download PDFInfo
- Publication number
- JP2004363572A JP2004363572A JP2004141779A JP2004141779A JP2004363572A JP 2004363572 A JP2004363572 A JP 2004363572A JP 2004141779 A JP2004141779 A JP 2004141779A JP 2004141779 A JP2004141779 A JP 2004141779A JP 2004363572 A JP2004363572 A JP 2004363572A
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- JP
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- Prior art keywords
- light emitting
- semiconductor
- electrode
- emitting device
- transparent conductive
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 98
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 claims abstract description 29
- 239000000758 substrate Substances 0.000 claims abstract description 14
- 238000009826 distribution Methods 0.000 claims description 44
- 238000000034 method Methods 0.000 claims description 12
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 claims description 3
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 claims description 3
- 239000002184 metal Substances 0.000 claims description 2
- 229910052751 metal Inorganic materials 0.000 claims description 2
- 230000000052 comparative effect Effects 0.000 description 30
- 239000010931 gold Substances 0.000 description 17
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 14
- 238000005253 cladding Methods 0.000 description 11
- 229910052737 gold Inorganic materials 0.000 description 11
- 229910000927 Ge alloy Inorganic materials 0.000 description 7
- 230000000694 effects Effects 0.000 description 7
- BYDQGSVXQDOSJJ-UHFFFAOYSA-N [Ge].[Au] Chemical compound [Ge].[Au] BYDQGSVXQDOSJJ-UHFFFAOYSA-N 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 230000002093 peripheral effect Effects 0.000 description 4
- 239000011701 zinc Substances 0.000 description 4
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 229910001020 Au alloy Inorganic materials 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 238000001771 vacuum deposition Methods 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000002441 X-ray diffraction Methods 0.000 description 1
- 238000005275 alloying Methods 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000000295 emission spectrum Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 238000007429 general method Methods 0.000 description 1
- SAOPTAQUONRHEV-UHFFFAOYSA-N gold zinc Chemical compound [Zn].[Au] SAOPTAQUONRHEV-UHFFFAOYSA-N 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
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Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2004141779A JP2004363572A (ja) | 2003-05-12 | 2004-05-12 | 半導体発光素子および発光ダイオード |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2003132716 | 2003-05-12 | ||
| JP2004141779A JP2004363572A (ja) | 2003-05-12 | 2004-05-12 | 半導体発光素子および発光ダイオード |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2004363572A true JP2004363572A (ja) | 2004-12-24 |
| JP2004363572A5 JP2004363572A5 (enExample) | 2007-06-28 |
Family
ID=34067113
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2004141779A Pending JP2004363572A (ja) | 2003-05-12 | 2004-05-12 | 半導体発光素子および発光ダイオード |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2004363572A (enExample) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2006128446A1 (de) * | 2005-06-02 | 2006-12-07 | Osram Opto Semiconductors Gmbh | Lumineszenzdiodenchip mit einer kontaktstruktur |
| JP2007140453A (ja) * | 2005-10-17 | 2007-06-07 | Hitachi Displays Ltd | 液晶表示装置 |
| JP2007288192A (ja) * | 2006-04-14 | 2007-11-01 | High Power Optoelectronics Inc | 半導体発光素子およびその製造方法 |
| JP2010004035A (ja) * | 2008-05-22 | 2010-01-07 | Mitsubishi Chemicals Corp | 半導体発光装置、照明装置、および画像表示装置 |
| CN102194954A (zh) * | 2010-03-10 | 2011-09-21 | 株式会社东芝 | 半导体发光器件、使用其的发光装置以及制造该半导体发光器件的方法 |
| US8368092B2 (en) | 2004-01-26 | 2013-02-05 | Osram Opto Semiconductors Gmbh | Thin film LED comprising a current-dispersing structure |
| CN113410358A (zh) * | 2020-03-17 | 2021-09-17 | 晶元光电股份有限公司 | 半导体发光元件 |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62141788A (ja) * | 1985-12-16 | 1987-06-25 | Mitsubishi Cable Ind Ltd | 発光ダイオ−ド表示装置 |
| JPH10301201A (ja) * | 1997-04-23 | 1998-11-13 | Fuji Xerox Co Ltd | プロジェクタ装置 |
| JP2001144330A (ja) * | 1999-11-17 | 2001-05-25 | Showa Denko Kk | 半導体発光ダイオード |
| JP2001345480A (ja) * | 2000-03-31 | 2001-12-14 | Toyoda Gosei Co Ltd | Iii族窒化物系化合物半導体素子 |
| JP2002043621A (ja) * | 2000-07-21 | 2002-02-08 | Showa Denko Kk | 発光ダイオード、ランプおよびその製造方法 |
-
2004
- 2004-05-12 JP JP2004141779A patent/JP2004363572A/ja active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62141788A (ja) * | 1985-12-16 | 1987-06-25 | Mitsubishi Cable Ind Ltd | 発光ダイオ−ド表示装置 |
| JPH10301201A (ja) * | 1997-04-23 | 1998-11-13 | Fuji Xerox Co Ltd | プロジェクタ装置 |
| JP2001144330A (ja) * | 1999-11-17 | 2001-05-25 | Showa Denko Kk | 半導体発光ダイオード |
| JP2001345480A (ja) * | 2000-03-31 | 2001-12-14 | Toyoda Gosei Co Ltd | Iii族窒化物系化合物半導体素子 |
| JP2002043621A (ja) * | 2000-07-21 | 2002-02-08 | Showa Denko Kk | 発光ダイオード、ランプおよびその製造方法 |
Cited By (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8368092B2 (en) | 2004-01-26 | 2013-02-05 | Osram Opto Semiconductors Gmbh | Thin film LED comprising a current-dispersing structure |
| US8581279B2 (en) | 2005-06-02 | 2013-11-12 | Osram Opto Semiconductors Gmbh | Light-emitting diode chip comprising a contact structure |
| JP2008543068A (ja) * | 2005-06-02 | 2008-11-27 | オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツング | コンタクト構造を有する発光ダイオードチップ |
| KR101249418B1 (ko) | 2005-06-02 | 2013-04-03 | 오스람 옵토 세미컨덕터스 게엠베하 | 콘택 구조물을 갖는 발광 다이오드 칩 |
| WO2006128446A1 (de) * | 2005-06-02 | 2006-12-07 | Osram Opto Semiconductors Gmbh | Lumineszenzdiodenchip mit einer kontaktstruktur |
| US7567317B2 (en) | 2005-10-17 | 2009-07-28 | Hitachi Displays, Ltd. | Liquid crystal display apparatus |
| JP2007140453A (ja) * | 2005-10-17 | 2007-06-07 | Hitachi Displays Ltd | 液晶表示装置 |
| JP2007288192A (ja) * | 2006-04-14 | 2007-11-01 | High Power Optoelectronics Inc | 半導体発光素子およびその製造方法 |
| JP2010004035A (ja) * | 2008-05-22 | 2010-01-07 | Mitsubishi Chemicals Corp | 半導体発光装置、照明装置、および画像表示装置 |
| CN102194954A (zh) * | 2010-03-10 | 2011-09-21 | 株式会社东芝 | 半导体发光器件、使用其的发光装置以及制造该半导体发光器件的方法 |
| US8680549B2 (en) | 2010-03-10 | 2014-03-25 | Kabushiki Kaisha Toshiba | Semiconductor light-emitting device and lighting instrument employing the same |
| TWI481076B (zh) * | 2010-03-10 | 2015-04-11 | Toshiba Kk | 半導體發光裝置、使用其之照明器具以及該半導體發光裝置之製造程序 |
| US9040324B2 (en) | 2010-03-10 | 2015-05-26 | Kabushiki Kaisha Toshiba | Semiconductor light-emitting device, lighting instrument employing the same and process for production of the semiconductor light-emitting device |
| CN113410358A (zh) * | 2020-03-17 | 2021-09-17 | 晶元光电股份有限公司 | 半导体发光元件 |
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