JP2004327561A5 - - Google Patents
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- JP2004327561A5 JP2004327561A5 JP2003117667A JP2003117667A JP2004327561A5 JP 2004327561 A5 JP2004327561 A5 JP 2004327561A5 JP 2003117667 A JP2003117667 A JP 2003117667A JP 2003117667 A JP2003117667 A JP 2003117667A JP 2004327561 A5 JP2004327561 A5 JP 2004327561A5
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Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2003117667A JP2004327561A (ja) | 2003-04-22 | 2003-04-22 | 基板処理方法及び基板処理装置 |
PCT/JP2004/005637 WO2004095571A1 (en) | 2003-04-22 | 2004-04-20 | Substrate processing method and substrate processing apparatus |
US10/553,903 US20070020918A1 (en) | 2003-04-22 | 2004-04-20 | Substrate processing method and substrate processing apparatus |
TW093111060A TW200503054A (en) | 2003-04-22 | 2004-04-21 | Substrate processing method and substrate processing apparatus |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2003117667A JP2004327561A (ja) | 2003-04-22 | 2003-04-22 | 基板処理方法及び基板処理装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2004327561A JP2004327561A (ja) | 2004-11-18 |
JP2004327561A5 true JP2004327561A5 (ja) | 2006-06-01 |
Family
ID=33308047
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2003117667A Pending JP2004327561A (ja) | 2003-04-22 | 2003-04-22 | 基板処理方法及び基板処理装置 |
Country Status (4)
Country | Link |
---|---|
US (1) | US20070020918A1 (ja) |
JP (1) | JP2004327561A (ja) |
TW (1) | TW200503054A (ja) |
WO (1) | WO2004095571A1 (ja) |
Families Citing this family (44)
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JPWO2004061931A1 (ja) * | 2002-12-26 | 2006-05-18 | 富士通株式会社 | 多層配線構造を有する半導体装置およびその製造方法 |
US20070205112A1 (en) * | 2004-08-27 | 2007-09-06 | Masako Kodera | Polishing apparatus and polishing method |
US20070164476A1 (en) * | 2004-09-01 | 2007-07-19 | Wei Wu | Contact lithography apparatus and method employing substrate deformation |
JP2006135072A (ja) * | 2004-11-05 | 2006-05-25 | Fujimi Inc | 研磨方法 |
US20080121529A1 (en) * | 2004-12-22 | 2008-05-29 | Yasushi Tohma | Flattening Method and Flattening Apparatus |
JP4519037B2 (ja) * | 2005-08-31 | 2010-08-04 | 東京エレクトロン株式会社 | 加熱装置及び塗布、現像装置 |
WO2007035408A1 (en) * | 2005-09-19 | 2007-03-29 | Applied Materials, Inc. | Method for stabilized polishing process |
JP2007123523A (ja) * | 2005-10-27 | 2007-05-17 | Ebara Corp | 研磨方法及び研磨装置、並びに電解研磨装置 |
KR100660916B1 (ko) * | 2006-02-09 | 2006-12-26 | 삼성전자주식회사 | 트렌치들의 패턴 밀도 및 깊이를 매개 변수로 이용하는도전층 평탄화 단계를 포함하는 반도체 소자의 제조 방법 |
JP2008032335A (ja) * | 2006-07-31 | 2008-02-14 | Hitachi High-Technologies Corp | ミニエンバイロメント装置、検査装置、製造装置、及び空間の清浄化方法 |
KR100900225B1 (ko) * | 2006-10-31 | 2009-06-02 | 주식회사 하이닉스반도체 | 다마신 공정을 이용한 반도체 소자의 구리배선 형성방법 |
US7678458B2 (en) | 2007-01-24 | 2010-03-16 | Asml Holding N.V. | Bonding silicon silicon carbide to glass ceramics |
JP4341686B2 (ja) * | 2007-02-23 | 2009-10-07 | セイコーエプソン株式会社 | 成膜装置および成膜方法 |
JP4887266B2 (ja) * | 2007-10-15 | 2012-02-29 | 株式会社荏原製作所 | 平坦化方法 |
US8734661B2 (en) | 2007-10-15 | 2014-05-27 | Ebara Corporation | Flattening method and flattening apparatus |
US8764993B2 (en) * | 2008-04-03 | 2014-07-01 | General Electric Company | SiOC membranes and methods of making the same |
US7960188B2 (en) * | 2008-05-15 | 2011-06-14 | Ebara Corporation | Polishing method |
US8273653B2 (en) * | 2008-06-06 | 2012-09-25 | Taiwan Semiconductor Manufacturing Company, Ltd. | Microscopic structure packaging method and device with packaged microscopic structure |
US8712571B2 (en) * | 2009-08-07 | 2014-04-29 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method and apparatus for wireless transmission of diagnostic information |
US8598031B2 (en) * | 2009-09-28 | 2013-12-03 | Globalfoundries Singapore Pte. Ltd. | Reliable interconnect for semiconductor device |
JP5728239B2 (ja) * | 2010-03-02 | 2015-06-03 | 株式会社荏原製作所 | 研磨監視方法、研磨方法、研磨監視装置、および研磨装置 |
US8404582B2 (en) * | 2010-05-04 | 2013-03-26 | International Business Machines Corporation | Structure and method for manufacturing interconnect structures having self-aligned dielectric caps |
JP5728187B2 (ja) * | 2010-09-17 | 2015-06-03 | ラピスセミコンダクタ株式会社 | 半導体装置の製造方法 |
US8476765B2 (en) * | 2010-12-06 | 2013-07-02 | Stmicroelectronics, Inc. | Copper interconnect structure having a graphene cap |
US20120276662A1 (en) * | 2011-04-27 | 2012-11-01 | Iravani Hassan G | Eddy current monitoring of metal features |
JP2013219248A (ja) | 2012-04-10 | 2013-10-24 | Ebara Corp | 研磨装置および研磨方法 |
US9472450B2 (en) | 2012-05-10 | 2016-10-18 | Samsung Electronics Co., Ltd. | Graphene cap for copper interconnect structures |
JP5941763B2 (ja) * | 2012-06-15 | 2016-06-29 | 株式会社荏原製作所 | 研磨方法 |
US9076655B2 (en) * | 2013-01-16 | 2015-07-07 | Stats Chippac, Ltd. | Semiconductor device and method of forming through-silicon-via with sacrificial layer |
KR101787798B1 (ko) * | 2013-10-31 | 2017-10-18 | 주식회사 엘지화학 | 금속 세선을 포함하는 투명 기판의 제조 방법 |
JP6372847B2 (ja) * | 2014-03-13 | 2018-08-15 | 株式会社荏原製作所 | 研磨装置 |
US9403228B2 (en) * | 2014-07-29 | 2016-08-02 | Faraday Technology, Inc. | Method and apparatus for pulsed electrochemical grinding |
US9475272B2 (en) | 2014-10-09 | 2016-10-25 | Taiwan Semiconductor Manufacturing Company, Ltd. | De-bonding and cleaning process and system |
JP6187948B1 (ja) * | 2016-03-11 | 2017-08-30 | 東邦エンジニアリング株式会社 | 平坦加工装置、その動作方法および加工物の製造方法 |
US10211153B2 (en) * | 2016-08-30 | 2019-02-19 | International Business Machines Corporation | Low aspect ratio interconnect |
US9881833B1 (en) * | 2016-10-26 | 2018-01-30 | International Business Machines Corporation | Barrier planarization for interconnect metallization |
DE102017203554A1 (de) * | 2017-03-04 | 2018-09-06 | Carl Zeiss Microscopy Gmbh | Objektpräparationseinrichtung und Teilchenstrahlgerät mit einer Objektpräparationseinrichtung sowie Verfahren zum Betrieb des Teilchenstrahlgeräts |
WO2019133457A1 (en) * | 2017-12-28 | 2019-07-04 | Rudolph Technologies, Inc. | Conformal stage |
CN111684271B (zh) * | 2018-02-09 | 2024-05-03 | 浜松光子学株式会社 | 试样支承体及试样支承体的制造方法 |
CN109015314A (zh) * | 2018-09-07 | 2018-12-18 | 杭州众硅电子科技有限公司 | 一种化学机械平坦化设备 |
JP7208779B2 (ja) * | 2018-12-11 | 2023-01-19 | キオクシア株式会社 | 基板処理装置 |
WO2020176425A1 (en) * | 2019-02-25 | 2020-09-03 | Board Of Regents, The University Of Texas System | Large area metrology and process control for anisotropic chemical etching |
JP7307575B2 (ja) * | 2019-03-28 | 2023-07-12 | 株式会社Screenホールディングス | 基板処理装置および基板処理方法 |
CN112719491B (zh) * | 2021-01-20 | 2022-03-15 | 河南理工大学 | 一种微生物掩膜电解加工微织构的方法 |
Family Cites Families (25)
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JP3270282B2 (ja) * | 1994-02-21 | 2002-04-02 | 株式会社東芝 | 半導体製造装置及び半導体装置の製造方法 |
US5676587A (en) * | 1995-12-06 | 1997-10-14 | International Business Machines Corporation | Selective polish process for titanium, titanium nitride, tantalum and tantalum nitride |
JPH10209090A (ja) * | 1997-01-23 | 1998-08-07 | Matsushita Electric Ind Co Ltd | 研磨方法と半導体の研磨装置 |
JP3160545B2 (ja) * | 1997-01-28 | 2001-04-25 | 松下電器産業株式会社 | 埋め込み配線の形成方法 |
US5897426A (en) * | 1998-04-24 | 1999-04-27 | Applied Materials, Inc. | Chemical mechanical polishing with multiple polishing pads |
US6395152B1 (en) * | 1998-07-09 | 2002-05-28 | Acm Research, Inc. | Methods and apparatus for electropolishing metal interconnections on semiconductor devices |
JP2000133623A (ja) * | 1998-10-28 | 2000-05-12 | Toshiba Corp | 平坦化方法及び平坦化装置 |
US6274478B1 (en) * | 1999-07-13 | 2001-08-14 | Motorola, Inc. | Method for forming a copper interconnect using a multi-platen chemical mechanical polishing (CMP) process |
US6573173B2 (en) * | 1999-07-13 | 2003-06-03 | Motorola, Inc. | Method for forming a copper interconnect using a multi-platen chemical mechanical polishing (CMP) process |
JP4513145B2 (ja) * | 1999-09-07 | 2010-07-28 | ソニー株式会社 | 半導体装置の製造方法および研磨方法 |
JP2001144050A (ja) * | 1999-11-15 | 2001-05-25 | Hitachi Chem Co Ltd | 研磨方法 |
US6299741B1 (en) * | 1999-11-29 | 2001-10-09 | Applied Materials, Inc. | Advanced electrolytic polish (AEP) assisted metal wafer planarization method and apparatus |
US6379223B1 (en) * | 1999-11-29 | 2002-04-30 | Applied Materials, Inc. | Method and apparatus for electrochemical-mechanical planarization |
JP2001284297A (ja) * | 2000-03-31 | 2001-10-12 | Sony Corp | 研磨装置、研磨方法および半導体装置の製造方法 |
JP2001338926A (ja) * | 2000-05-29 | 2001-12-07 | Sony Corp | 半導体装置の製造方法 |
JP2001358105A (ja) * | 2000-06-12 | 2001-12-26 | Mitsubishi Electric Corp | 埋め込み配線の形成方法およびcmp装置、並びに半導体装置およびその製造方法 |
EP1170083B1 (en) * | 2000-07-05 | 2008-09-10 | Ebara Corporation | Electrochemical machining method and apparatus |
JP4141114B2 (ja) * | 2000-07-05 | 2008-08-27 | 株式会社荏原製作所 | 電解加工方法及び装置 |
US6746958B1 (en) * | 2001-03-26 | 2004-06-08 | Advanced Micro Devices, Inc. | Method of controlling the duration of an endpoint polishing process in a multistage polishing process |
JP4507457B2 (ja) * | 2001-05-30 | 2010-07-21 | ソニー株式会社 | 半導体装置の製造方法 |
US7104869B2 (en) * | 2001-07-13 | 2006-09-12 | Applied Materials, Inc. | Barrier removal at low polish pressure |
JP3639229B2 (ja) * | 2001-07-17 | 2005-04-20 | 松下電器産業株式会社 | 堆積膜の平坦化方法 |
JP2003077920A (ja) * | 2001-09-04 | 2003-03-14 | Nec Corp | 金属配線の形成方法 |
US6837983B2 (en) * | 2002-01-22 | 2005-01-04 | Applied Materials, Inc. | Endpoint detection for electro chemical mechanical polishing and electropolishing processes |
US6951599B2 (en) * | 2002-01-22 | 2005-10-04 | Applied Materials, Inc. | Electropolishing of metallic interconnects |
-
2003
- 2003-04-22 JP JP2003117667A patent/JP2004327561A/ja active Pending
-
2004
- 2004-04-20 US US10/553,903 patent/US20070020918A1/en not_active Abandoned
- 2004-04-20 WO PCT/JP2004/005637 patent/WO2004095571A1/en active Application Filing
- 2004-04-21 TW TW093111060A patent/TW200503054A/zh unknown