JP2004311418A5 - - Google Patents
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- Publication number
- JP2004311418A5 JP2004311418A5 JP2004072314A JP2004072314A JP2004311418A5 JP 2004311418 A5 JP2004311418 A5 JP 2004311418A5 JP 2004072314 A JP2004072314 A JP 2004072314A JP 2004072314 A JP2004072314 A JP 2004072314A JP 2004311418 A5 JP2004311418 A5 JP 2004311418A5
- Authority
- JP
- Japan
- Prior art keywords
- conductive film
- transparent conductive
- tin oxide
- display device
- transistor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims 24
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical group [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 claims 12
- 239000011787 zinc oxide Substances 0.000 claims 12
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 7
- 229910052710 silicon Inorganic materials 0.000 claims 7
- 239000010703 silicon Substances 0.000 claims 7
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims 6
- 229910052733 gallium Inorganic materials 0.000 claims 6
- 238000004519 manufacturing process Methods 0.000 claims 6
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 claims 6
- 229910001887 tin oxide Inorganic materials 0.000 claims 6
- 238000000034 method Methods 0.000 claims 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical group [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims 3
- 238000005530 etching Methods 0.000 claims 3
- 229910052760 oxygen Inorganic materials 0.000 claims 3
- 239000001301 oxygen Substances 0.000 claims 3
- 229910052814 silicon oxide Inorganic materials 0.000 claims 3
- 238000004381 surface treatment Methods 0.000 claims 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims 2
- 239000002253 acid Substances 0.000 claims 2
- 239000003929 acidic solution Substances 0.000 claims 2
- 238000010438 heat treatment Methods 0.000 claims 2
- 229910052738 indium Inorganic materials 0.000 claims 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims 2
- 239000000243 solution Substances 0.000 claims 2
- 229910052581 Si3N4 Inorganic materials 0.000 claims 1
- 239000012670 alkaline solution Substances 0.000 claims 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2004072314A JP4850393B2 (ja) | 2003-03-25 | 2004-03-15 | 表示装置の作製方法 |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2003083120 | 2003-03-25 | ||
| JP2003083120 | 2003-03-25 | ||
| JP2004072314A JP4850393B2 (ja) | 2003-03-25 | 2004-03-15 | 表示装置の作製方法 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2011195972A Division JP5079130B2 (ja) | 2003-03-25 | 2011-09-08 | 表示装置 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2004311418A JP2004311418A (ja) | 2004-11-04 |
| JP2004311418A5 true JP2004311418A5 (enExample) | 2007-04-05 |
| JP4850393B2 JP4850393B2 (ja) | 2012-01-11 |
Family
ID=33478213
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2004072314A Expired - Fee Related JP4850393B2 (ja) | 2003-03-25 | 2004-03-15 | 表示装置の作製方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4850393B2 (enExample) |
Families Citing this family (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007035432A (ja) * | 2005-07-27 | 2007-02-08 | Fuji Electric Holdings Co Ltd | 有機ｅｌ素子およびその製造方法 |
| KR100699072B1 (ko) | 2005-08-02 | 2007-03-27 | 한국과학기술연구원 | 산화아연계 투명 도전막 |
| JP2007163995A (ja) * | 2005-12-15 | 2007-06-28 | Geomatec Co Ltd | 透明導電膜付き基板およびその製造方法 |
| JP2007234259A (ja) * | 2006-02-27 | 2007-09-13 | Hitachi Displays Ltd | 有機ｅｌ表示装置 |
| US20110001423A1 (en) * | 2008-02-15 | 2011-01-06 | Showa Denko K.K. | Process for treating an electrode surface, electrode, and process for manufacturing organic electroluminescence devices |
| JP2009238416A (ja) * | 2008-03-26 | 2009-10-15 | Toppan Printing Co Ltd | 透明導電膜付き基板及びその製造方法 |
| JP5244439B2 (ja) * | 2008-04-08 | 2013-07-24 | 三菱電機株式会社 | 透明導電膜、表示装置、及びこれらの製造方法 |
| US8242487B2 (en) | 2008-05-16 | 2012-08-14 | E I Du Pont De Nemours And Company | Anode for an organic electronic device |
| WO2010065505A2 (en) * | 2008-12-01 | 2010-06-10 | E. I. Du Pont De Nemours And Company | Anode for an organic electronic device |
| JP2012510540A (ja) | 2008-12-01 | 2012-05-10 | イー・アイ・デュポン・ドウ・ヌムール・アンド・カンパニー | 電気活性材料 |
| JP2012510705A (ja) * | 2008-12-01 | 2012-05-10 | イー・アイ・デュポン・ドウ・ヌムール・アンド・カンパニー | 有機電子デバイス用のアノード |
| KR101692409B1 (ko) * | 2010-03-29 | 2017-01-04 | 삼성디스플레이 주식회사 | 유기 발광 표시 장치 및 그 제조 방법 |
| WO2012039000A1 (ja) * | 2010-09-21 | 2012-03-29 | パナソニック株式会社 | 薄膜トランジスタアレイ装置、薄膜トランジスタアレイ装置の製造方法 |
| CN102576711B (zh) | 2010-09-21 | 2015-12-16 | 株式会社日本有机雷特显示器 | 薄膜晶体管阵列装置、薄膜晶体管阵列装置的制造方法 |
| KR101920225B1 (ko) * | 2012-08-22 | 2018-11-20 | 엘지디스플레이 주식회사 | 유기전기발광소자 및 그 어레이 기판의 제조 방법 |
| KR102322700B1 (ko) * | 2014-05-23 | 2021-11-04 | 엘지디스플레이 주식회사 | 유기전계 발광표시장치 및 그 제조방법 |
| JP2016192342A (ja) * | 2015-03-31 | 2016-11-10 | パイオニア株式会社 | 発光装置 |
| JP2020035755A (ja) * | 2019-11-01 | 2020-03-05 | パイオニア株式会社 | 発光装置 |
| CN112670247B (zh) * | 2020-12-23 | 2024-02-02 | 武汉天马微电子有限公司 | 一种显示面板的制备方法、显示面板及显示装置 |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6410507A (en) * | 1987-07-02 | 1989-01-13 | Optrex Kk | Transparent conductive film and its manufacture |
| JPH09185062A (ja) * | 1995-12-27 | 1997-07-15 | Canon Inc | 表示素子 |
| JP2000108244A (ja) * | 1998-10-05 | 2000-04-18 | Asahi Glass Co Ltd | 透明導電膜とその製造方法および透明導電膜付き基体 |
| JP4537596B2 (ja) * | 2000-02-10 | 2010-09-01 | パナソニック電工株式会社 | 有機エレクトロルミネッセンス素子及びその製造方法 |
| JP2001331124A (ja) * | 2000-05-22 | 2001-11-30 | Toshiba Corp | マトリクスアレイ基板 |
| JP4906022B2 (ja) * | 2000-08-10 | 2012-03-28 | 株式会社半導体エネルギー研究所 | アクティブマトリクス型ｅｌ表示装置及び電子機器 |
| JP2002124680A (ja) * | 2000-10-16 | 2002-04-26 | Toshiba Corp | アレイ基板及びその製造方法 |
| JP4865165B2 (ja) * | 2001-08-29 | 2012-02-01 | 株式会社半導体エネルギー研究所 | 発光装置の作製方法 |
| JP4026343B2 (ja) * | 2001-10-02 | 2007-12-26 | ソニー株式会社 | 有機エレクトロルミネッセンス素子の製造方法 |
-
2004
- 2004-03-15 JP JP2004072314A patent/JP4850393B2/ja not_active Expired - Fee Related
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