JP2004221242A - 半導体集積回路装置およびその製造方法 - Google Patents

半導体集積回路装置およびその製造方法 Download PDF

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Publication number
JP2004221242A
JP2004221242A JP2003005825A JP2003005825A JP2004221242A JP 2004221242 A JP2004221242 A JP 2004221242A JP 2003005825 A JP2003005825 A JP 2003005825A JP 2003005825 A JP2003005825 A JP 2003005825A JP 2004221242 A JP2004221242 A JP 2004221242A
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JP
Japan
Prior art keywords
film
insulating film
integrated circuit
circuit device
columnar
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP2003005825A
Other languages
English (en)
Japanese (ja)
Other versions
JP2004221242A5 (enrdf_load_stackoverflow
Inventor
Tatsuki Murata
龍紀 村田
Takahiro Nakamura
貴弘 中村
Yasumichi Suzuki
康道 鈴木
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Renesas Technology Corp
Original Assignee
Renesas Technology Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Renesas Technology Corp filed Critical Renesas Technology Corp
Priority to JP2003005825A priority Critical patent/JP2004221242A/ja
Priority to TW092136295A priority patent/TW200423313A/zh
Priority to KR1020040002150A priority patent/KR20040065168A/ko
Priority to US10/756,419 priority patent/US7259052B2/en
Publication of JP2004221242A publication Critical patent/JP2004221242A/ja
Publication of JP2004221242A5 publication Critical patent/JP2004221242A5/ja
Priority to US11/651,095 priority patent/US7306984B2/en
Priority to US11/936,370 priority patent/US7482650B2/en
Withdrawn legal-status Critical Current

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05B—SPRAYING APPARATUS; ATOMISING APPARATUS; NOZZLES
    • B05B7/00—Spraying apparatus for discharge of liquids or other fluent materials from two or more sources, e.g. of liquid and air, of powder and gas
    • B05B7/02—Spray pistols; Apparatus for discharge
    • B05B7/04—Spray pistols; Apparatus for discharge with arrangements for mixing liquids or other fluent materials before discharge
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/412—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using field-effect transistors only
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B10/00—Static random access memory [SRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B10/00—Static random access memory [SRAM] devices
    • H10B10/12—Static random access memory [SRAM] devices comprising a MOSFET load element
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/025—Manufacture or treatment of FETs having insulated gates [IGFET] of vertical IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/63—Vertical IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/10—Integrated device layouts

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Semiconductor Memories (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Formation Of Insulating Films (AREA)
JP2003005825A 2003-01-14 2003-01-14 半導体集積回路装置およびその製造方法 Withdrawn JP2004221242A (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2003005825A JP2004221242A (ja) 2003-01-14 2003-01-14 半導体集積回路装置およびその製造方法
TW092136295A TW200423313A (en) 2003-01-14 2003-12-19 A semiconductor integrated circuit device and a method of manufacturing the same
KR1020040002150A KR20040065168A (ko) 2003-01-14 2004-01-13 반도체 집적 회로 장치 및 그 제조 방법
US10/756,419 US7259052B2 (en) 2003-01-14 2004-01-14 Manufacture of a semiconductor integrated circuit device including a pluarality of a columnar laminates having different spacing in different directions
US11/651,095 US7306984B2 (en) 2003-01-14 2007-01-09 Method of manufacture of a semiconductor integrated circuit device including a plurality of columnar laminates having different spacing in different directions
US11/936,370 US7482650B2 (en) 2003-01-14 2007-11-07 Method of manufacturing a semiconductor integrated circuit device having a columnar laminate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2003005825A JP2004221242A (ja) 2003-01-14 2003-01-14 半導体集積回路装置およびその製造方法

Publications (2)

Publication Number Publication Date
JP2004221242A true JP2004221242A (ja) 2004-08-05
JP2004221242A5 JP2004221242A5 (enrdf_load_stackoverflow) 2006-02-23

Family

ID=32709034

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2003005825A Withdrawn JP2004221242A (ja) 2003-01-14 2003-01-14 半導体集積回路装置およびその製造方法

Country Status (4)

Country Link
US (3) US7259052B2 (enrdf_load_stackoverflow)
JP (1) JP2004221242A (enrdf_load_stackoverflow)
KR (1) KR20040065168A (enrdf_load_stackoverflow)
TW (1) TW200423313A (enrdf_load_stackoverflow)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7791133B2 (en) 2007-09-25 2010-09-07 Elpida Memory, Inc. Semiconductor device with reduced gate-overlap capacitance and method of forming the same
US8294205B2 (en) 2008-12-05 2012-10-23 Elpida Memory, Inc. Semiconductor device and method of forming semiconductor device
JP2015109471A (ja) * 2009-11-13 2015-06-11 株式会社半導体エネルギー研究所 半導体装置

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* Cited by examiner, † Cited by third party
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FR2812185B1 (fr) 2000-07-25 2003-02-28 Spine Next Sa Piece de liaison semi-rigide pour la stabilisation du rachis
US7271489B2 (en) * 2003-10-15 2007-09-18 Megica Corporation Post passivation interconnection schemes on top of the IC chips
JP2004319722A (ja) * 2003-04-16 2004-11-11 Hitachi Ltd 半導体集積回路装置およびその製造方法
US7670946B2 (en) * 2006-05-15 2010-03-02 Chartered Semiconductor Manufacturing, Ltd. Methods to eliminate contact plug sidewall slit
US7617475B2 (en) * 2006-11-13 2009-11-10 United Microelectronics Corp. Method of manufacturing photomask and method of repairing optical proximity correction
US20080177316A1 (en) * 2006-11-30 2008-07-24 Bergeron Brian J Apparatus and methods for spinal implant
US8252026B2 (en) * 2007-02-21 2012-08-28 Zimmer Spine, Inc. Spinal implant for facet joint
JP5781720B2 (ja) 2008-12-15 2015-09-24 ルネサスエレクトロニクス株式会社 半導体装置及び半導体装置の製造方法
US11646309B2 (en) * 2009-10-12 2023-05-09 Monolithic 3D Inc. 3D semiconductor devices and structures with metal layers
KR101718981B1 (ko) * 2010-06-30 2017-03-23 삼성전자주식회사 콘택 플러그를 포함하는 반도체 소자
JP2012015355A (ja) * 2010-07-01 2012-01-19 Toshiba Corp 半導体装置及びその製造方法
JP5422530B2 (ja) * 2010-09-22 2014-02-19 株式会社東芝 半導体記憶装置及びその製造方法
JP6013084B2 (ja) * 2012-08-24 2016-10-25 ルネサスエレクトロニクス株式会社 半導体装置及び半導体装置の製造方法
JP5960000B2 (ja) * 2012-09-05 2016-08-02 ルネサスエレクトロニクス株式会社 半導体装置及び半導体装置の製造方法
EP3101085A1 (en) 2015-06-01 2016-12-07 Cytec Industries Inc. Foam-forming surfactant compositions
US9711501B1 (en) * 2016-09-26 2017-07-18 International Business Machines Corporation Interlayer via
US10707211B2 (en) * 2018-09-24 2020-07-07 Micron Technology, Inc. Integrated circuitry comprising an array, method of forming an array, method of forming DRAM circuitry, and method used in the fabrication of integrated circuitry
JP2021150591A (ja) * 2020-03-23 2021-09-27 キオクシア株式会社 半導体装置
CN115668492B (zh) * 2020-06-05 2025-03-07 三菱电机株式会社 功率半导体装置及其制造方法和电力变换装置

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Publication number Priority date Publication date Assignee Title
US5198683A (en) * 1991-05-03 1993-03-30 Motorola, Inc. Integrated circuit memory device and structural layout thereof
JPH06104405A (ja) 1992-09-22 1994-04-15 Toshiba Corp スタティック型メモリ
JP3403231B2 (ja) * 1993-05-12 2003-05-06 三菱電機株式会社 半導体装置およびその製造方法
JP3745392B2 (ja) * 1994-05-26 2006-02-15 株式会社ルネサステクノロジ 半導体装置
US6326248B1 (en) * 1994-06-02 2001-12-04 Semiconductor Energy Laboratory Co., Ltd. Process for fabricating semiconductor device
US5670803A (en) * 1995-02-08 1997-09-23 International Business Machines Corporation Three-dimensional SRAM trench structure and fabrication method therefor
JP2921468B2 (ja) 1996-02-19 1999-07-19 日本電気株式会社 半導体メモリ装置
KR19990040443A (ko) 1997-11-18 1999-06-05 윤종용 미세한 선폭과 고 종횡비를 갖는 영역에 절연막을 채우는 방법
JP3936830B2 (ja) 1999-05-13 2007-06-27 株式会社日立製作所 半導体装置
WO2000070683A1 (en) 1999-05-13 2000-11-23 Hitachi, Ltd. Semiconductor memory
JP3366301B2 (ja) * 1999-11-10 2003-01-14 日本電気株式会社 プラズマｃｖｄ装置
JP2003068883A (ja) 2001-08-24 2003-03-07 Hitachi Ltd 半導体記憶装置
KR100911295B1 (ko) * 2001-10-24 2009-08-11 엘피다 메모리, 아이엔씨. 종형 ｍｉｓｆｅｔ의 제조 방법, 종형 ｍｉｓｆｅｔ,반도체 기억 장치의 제조 방법, 및 반도체 기억 장치
JP2004096065A (ja) * 2002-07-08 2004-03-25 Renesas Technology Corp 半導体記憶装置およびその製造方法
JP4343571B2 (ja) * 2002-07-31 2009-10-14 株式会社ルネサステクノロジ 半導体装置の製造方法

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7791133B2 (en) 2007-09-25 2010-09-07 Elpida Memory, Inc. Semiconductor device with reduced gate-overlap capacitance and method of forming the same
US8294205B2 (en) 2008-12-05 2012-10-23 Elpida Memory, Inc. Semiconductor device and method of forming semiconductor device
JP2015109471A (ja) * 2009-11-13 2015-06-11 株式会社半導体エネルギー研究所 半導体装置

Also Published As

Publication number Publication date
US20070111512A1 (en) 2007-05-17
US7259052B2 (en) 2007-08-21
US20040140502A1 (en) 2004-07-22
KR20040065168A (ko) 2004-07-21
TW200423313A (en) 2004-11-01
US7306984B2 (en) 2007-12-11
US7482650B2 (en) 2009-01-27
US20080073711A1 (en) 2008-03-27

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