JP2004220032A - 過フルオロポリエーテル液ペリクルおよび過フルオロポリエーテル液を使用したマスクのクリーニング方法 - Google Patents
過フルオロポリエーテル液ペリクルおよび過フルオロポリエーテル液を使用したマスクのクリーニング方法 Download PDFInfo
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/82—Auxiliary processes, e.g. cleaning or inspecting
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
- G03F1/24—Reflection masks; Preparation thereof
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
- G03F1/48—Protective coatings
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2041—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means
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- Crystallography & Structural Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Mathematical Physics (AREA)
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- Architecture (AREA)
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- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
Abstract
【解決手段】フォトリソグラフィ装置に使用するマスクなどのパターニング・デバイスは、素材層と、素材層の表面上にあるパターン状不透明材料の層と、表面を覆う過フルオロポリエーテル(PFPE)液のペリクルとを含む。パターニング・デバイスの製造方法は、素材層および不透明材料のパターン状層を有するパターニング・デバイスを素材層の表面に設けることと、PFP液層を形成するため、表面に表面を覆うPFPE液を塗布することと、PFP液層の少なくとも一部を除去することとを含む。フォトリソグラフィ投影装置に使用するパターニング・デバイスのクリーニング方法、素材層と、素材層の表面上にある不透明材料のパターン状層とを含むパターニング・デバイス、PFPE液層を形成するため、PFPE液の表面に表面を覆うPFPE液体を塗布することと、PFPE液層の少なくとも一部を除去することとを含む方法。
【選択図】図1
Description
1.ステップ・モードでは、マスク・テーブルMTは基本的に静止状態に維持し、マスクの像を1回で、つまり1つの「フラッシュ」で標的部分Cに投影する。次に、ビームPBで異なる標的部分Cを露光できるよう、基板テーブルWTをXおよび/またはY方向にシフトさせる。
2.走査モードでは、基本的に同じシナリオが当てはまるが、所与の標的部分Cが1つの「フラッシュ」では露光しない。代わりに、マスク・テーブルMTは速度vで所与の方向(いわゆる「走査方向」、例えばY方向)に移動可能であり、したがって投影ビームPBがマスクの像を走査する。同時に、基板テーブルWTが速度V=Mvで同じ方向または反対方向に同時に移動し、ここでMはレンズPLの倍率(通常はM=1/4または1/5)である。この方法で、解像度を妥協せずに比較的大きい標的部分Cを露光することができる。
Claims (16)
- リソグラフィ投影装置に使用するパターニング・デバイスで、
クォーツ、ガラス、MgFまたはCaF2で形成した素材層と、
素材層の表面上に不透明材料の層があるパターン状層と、
素材層の表面上にあって表面を覆う過フルオロポリエーテル(PFPE)液の層とを備えるパターニング・デバイス。 - 素材層の屈折率とPFPE液層の屈折率との差が、0.21以下である、請求項1に記載のパターニング・デバイス。
- 素材層が、不透明材料層のパターンに対応するパターンを含む、請求項1に記載のパターニング・デバイス。
- PFPE液層の厚さが、パターニング・デバイスに描像される放射線の焦点距離とほぼ等しい、請求項1に記載のパターニング・デバイス。
- リソグラフィ装置に使用するパターニング・デバイスを製造する方法で、
素材層と、素材層の表面上にある不透明材料のパターン状層とを有するパターニング・デバイスを設けることと、
PFPE液層を形成するため、素材層の表面に表面を覆う過フルオロポリエーテル(PFPE)液を塗布することと、
PFPE液層の少なくとも一部を除去することとを含む方法。 - 素材層の屈折率とPFPE液層の屈折率との差が、0.21以下である、請求項5に記載の方法。
- 素材層が、不透明材料層のパターンに対応するパターンを有する、請求項5に記載の方法。
- PFPE液層の一部を除去することが、マスク上に描像される放射線の焦点距離とほぼ等しくなるべくPFPE液層の厚さを調節するよう、部分を除去することを含む、請求項5に記載の方法。
- PFPE液層の一部を除去することが、マスクを回転または攪拌することを含む、請求項5に記載の方法。
- リソグラフィ投影装置に使用するパターニング・デバイスをクリーニングする方法で、パターニング・デバイスは素材層と、素材層の表面上にある不透明材料のパターン状層とを含み、
PFPE液層を形成するため、素材層の表面に表面を覆う過フルオロポリエーテル(PFPE)液を塗布することと、
PFPE液層の少なくとも一部を除去することとを含む方法。 - さらに、PFPE液層を塗布する前に、表面から汚染したPFPE液層を除去することを含む、請求項10に記載の方法。
- 素材層の屈折率とPFPE液層の屈折率との差が、0.21以下である、請求項10に記載の方法。
- 素材層が、不透明材料層のパターンに対応するパターンを有する、請求項10に記載の方法。
- PFP液層の一部を除去することが、マスクを回転または攪拌することを含む、請求項10に記載の方法。
- PFPE液層の一部を除去することが、マスク上に描像される放射線の焦点距離とほぼ等しくなるべくPFPE液層の厚さを調節するよう、一部を除去することを含む、請求項10に記載の方法。
- 集積回路、集積光学システム、磁気ドメイン・メモリのパターン、液晶表示パネル、および薄膜磁気ヘッドで使用するデバイスで、
放射線感受性材料の層で少なくとも部分的に覆われた基板を設けることと、
投影放射線ビームを提供することと、
請求項1に記載のパターニング・デバイスを使用して、投影ビームの断面にパターンを与えることと、
放射線感受性材料の層の標的部分にパターン状放射線ビームを投影することとを含む方法によって製造したデバイス。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/342,240 US7022437B2 (en) | 2003-01-15 | 2003-01-15 | Perfluoropolyether liquid pellicle and methods of cleaning masks using perfluoropolyether liquid |
Related Child Applications (1)
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JP2007327526A Division JP4137990B2 (ja) | 2003-01-15 | 2007-12-19 | 過フルオロポリエーテル液ペリクル |
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JP2004220032A true JP2004220032A (ja) | 2004-08-05 |
JP4083125B2 JP4083125B2 (ja) | 2008-04-30 |
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JP2004006824A Expired - Fee Related JP4083125B2 (ja) | 2003-01-15 | 2004-01-14 | 過フルオロポリエーテル液ペリクルおよび過フルオロポリエーテル液を使用したマスクのクリーニング方法 |
JP2007327526A Expired - Fee Related JP4137990B2 (ja) | 2003-01-15 | 2007-12-19 | 過フルオロポリエーテル液ペリクル |
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US (1) | US7022437B2 (ja) |
EP (1) | EP1439421B1 (ja) |
JP (2) | JP4083125B2 (ja) |
KR (1) | KR100599941B1 (ja) |
CN (1) | CN1517799A (ja) |
DE (1) | DE602004007961T2 (ja) |
SG (1) | SG120971A1 (ja) |
TW (1) | TWI275901B (ja) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007140444A (ja) * | 2005-10-21 | 2007-06-07 | Shin Etsu Chem Co Ltd | マスクパターン被覆材料 |
JP2007206184A (ja) * | 2006-01-31 | 2007-08-16 | Dainippon Printing Co Ltd | フォトマスクおよびその製造方法、並びにパターン転写方法 |
JP2008311462A (ja) * | 2007-06-15 | 2008-12-25 | Shin Etsu Chem Co Ltd | パターン転写方法およびフォトマスク |
JP2011253209A (ja) * | 2011-09-21 | 2011-12-15 | Shin Etsu Chem Co Ltd | パターン転写方法およびフォトマスク |
Families Citing this family (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7214452B2 (en) * | 2002-11-07 | 2007-05-08 | Intel Corporation | Using perfluoropoly-ethers to form pellicles |
WO2004088735A1 (ja) * | 2003-03-31 | 2004-10-14 | Hoya Corporation | 洗浄方法、異物除去方法、洗浄装置及び洗浄液 |
US8268446B2 (en) * | 2003-09-23 | 2012-09-18 | The University Of North Carolina At Chapel Hill | Photocurable perfluoropolyethers for use as novel materials in microfluidic devices |
US7018556B2 (en) * | 2003-10-10 | 2006-03-28 | Asml Holding N.V. | Method to etch chrome deposited on calcium fluoride object |
US7709180B2 (en) * | 2003-12-19 | 2010-05-04 | Sematech, Inc. | Soft pellicle and method of making same |
US7504192B2 (en) * | 2003-12-19 | 2009-03-17 | Sematech Inc. | Soft pellicle for 157 and 193 nm and method of making same |
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US7773195B2 (en) * | 2005-11-29 | 2010-08-10 | Asml Holding N.V. | System and method to increase surface tension and contact angle in immersion lithography |
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JP2004536171A (ja) | 2001-05-14 | 2004-12-02 | イー・アイ・デュポン・ドウ・ヌムール・アンド・カンパニー | 紫外線及び真空紫外線の透明性を必要とする適用での部分フッ素化ポリマーの使用 |
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Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2007140444A (ja) * | 2005-10-21 | 2007-06-07 | Shin Etsu Chem Co Ltd | マスクパターン被覆材料 |
JP4563949B2 (ja) * | 2005-10-21 | 2010-10-20 | 信越化学工業株式会社 | マスクパターン被覆材料 |
JP2007206184A (ja) * | 2006-01-31 | 2007-08-16 | Dainippon Printing Co Ltd | フォトマスクおよびその製造方法、並びにパターン転写方法 |
JP2008311462A (ja) * | 2007-06-15 | 2008-12-25 | Shin Etsu Chem Co Ltd | パターン転写方法およびフォトマスク |
JP2011253209A (ja) * | 2011-09-21 | 2011-12-15 | Shin Etsu Chem Co Ltd | パターン転写方法およびフォトマスク |
Also Published As
Publication number | Publication date |
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DE602004007961D1 (de) | 2007-09-20 |
EP1439421A2 (en) | 2004-07-21 |
EP1439421B1 (en) | 2007-08-08 |
JP4137990B2 (ja) | 2008-08-20 |
TWI275901B (en) | 2007-03-11 |
KR100599941B1 (ko) | 2006-07-12 |
JP2008116979A (ja) | 2008-05-22 |
US20040137336A1 (en) | 2004-07-15 |
EP1439421A3 (en) | 2004-12-29 |
SG120971A1 (en) | 2006-04-26 |
TW200424756A (en) | 2004-11-16 |
DE602004007961T2 (de) | 2008-04-17 |
CN1517799A (zh) | 2004-08-04 |
US7022437B2 (en) | 2006-04-04 |
KR20040066022A (ko) | 2004-07-23 |
JP4083125B2 (ja) | 2008-04-30 |
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