DE602004007961D1 - Flüssige Perfluoropolyether Maskendeckschicht - Google Patents

Flüssige Perfluoropolyether Maskendeckschicht

Info

Publication number
DE602004007961D1
DE602004007961D1 DE602004007961T DE602004007961T DE602004007961D1 DE 602004007961 D1 DE602004007961 D1 DE 602004007961D1 DE 602004007961 T DE602004007961 T DE 602004007961T DE 602004007961 T DE602004007961 T DE 602004007961T DE 602004007961 D1 DE602004007961 D1 DE 602004007961D1
Authority
DE
Germany
Prior art keywords
overcoat
masking
liquid perfluoropolyether
perfluoropolyether
liquid
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE602004007961T
Other languages
English (en)
Other versions
DE602004007961T2 (de
Inventor
Kevin Cummings
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
ASML Netherlands BV
Original Assignee
ASML Netherlands BV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by ASML Netherlands BV filed Critical ASML Netherlands BV
Publication of DE602004007961D1 publication Critical patent/DE602004007961D1/de
Application granted granted Critical
Publication of DE602004007961T2 publication Critical patent/DE602004007961T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/82—Auxiliary processes, e.g. cleaning or inspecting
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
    • G03F1/24—Reflection masks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • G03F1/48—Protective coatings
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2041—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Nanotechnology (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
DE602004007961T 2003-01-15 2004-01-15 Flüssige Perfluoropolyether Maskendeckschicht Expired - Fee Related DE602004007961T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US342240 2003-01-15
US10/342,240 US7022437B2 (en) 2003-01-15 2003-01-15 Perfluoropolyether liquid pellicle and methods of cleaning masks using perfluoropolyether liquid

Publications (2)

Publication Number Publication Date
DE602004007961D1 true DE602004007961D1 (de) 2007-09-20
DE602004007961T2 DE602004007961T2 (de) 2008-04-17

Family

ID=32594837

Family Applications (1)

Application Number Title Priority Date Filing Date
DE602004007961T Expired - Fee Related DE602004007961T2 (de) 2003-01-15 2004-01-15 Flüssige Perfluoropolyether Maskendeckschicht

Country Status (8)

Country Link
US (1) US7022437B2 (de)
EP (1) EP1439421B1 (de)
JP (2) JP4083125B2 (de)
KR (1) KR100599941B1 (de)
CN (1) CN1517799A (de)
DE (1) DE602004007961T2 (de)
SG (1) SG120971A1 (de)
TW (1) TWI275901B (de)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7214452B2 (en) * 2002-11-07 2007-05-08 Intel Corporation Using perfluoropoly-ethers to form pellicles
US20060151008A1 (en) * 2003-03-31 2006-07-13 Hoya Corporation Cleaning method, method for removing foreign particle, cleaning apparatus, and cleaning liquid
AU2004276302B2 (en) * 2003-09-23 2011-02-03 California Institute Of Technology Photocurable perfluoropolyethers for use as novel materials in microfluidic devices
US7018556B2 (en) * 2003-10-10 2006-03-28 Asml Holding N.V. Method to etch chrome deposited on calcium fluoride object
US7709180B2 (en) * 2003-12-19 2010-05-04 Sematech, Inc. Soft pellicle and method of making same
US7504192B2 (en) * 2003-12-19 2009-03-17 Sematech Inc. Soft pellicle for 157 and 193 nm and method of making same
KR100819638B1 (ko) * 2005-07-28 2008-04-04 주식회사 하이닉스반도체 펠리클 장치 및 이를 이용한 패턴 형성 방법
JP4563949B2 (ja) * 2005-10-21 2010-10-20 信越化学工業株式会社 マスクパターン被覆材料
US7773195B2 (en) * 2005-11-29 2010-08-10 Asml Holding N.V. System and method to increase surface tension and contact angle in immersion lithography
KR100720520B1 (ko) * 2005-12-28 2007-05-22 동부일렉트로닉스 주식회사 노광마스크
JP4760404B2 (ja) * 2006-01-31 2011-08-31 大日本印刷株式会社 フォトマスク
KR101249219B1 (ko) 2006-09-29 2013-04-03 삼성전자주식회사 공중합체, 뱅크 형성용 조성물 및 이를 이용한 뱅크 형성방법
JP4977535B2 (ja) * 2007-06-15 2012-07-18 信越化学工業株式会社 パターン転写方法
KR101439538B1 (ko) 2007-08-14 2014-09-12 삼성전자주식회사 보호막 형성용 조성물 및 이에 의한 보호막을 포함한유기박막 트랜지스터
WO2010070964A1 (ja) * 2008-12-16 2010-06-24 株式会社村田製作所 回路モジュール及びその管理方法
TWI636080B (zh) * 2010-04-13 2018-09-21 旭化成電子材料股份有限公司 自撐膜、自撐結構體、自撐膜之製造方法及護膜
JP4977794B2 (ja) * 2011-09-21 2012-07-18 信越化学工業株式会社 パターン転写方法およびフォトマスク
CN105652588B (zh) * 2016-03-21 2020-04-24 京东方科技集团股份有限公司 一种掩膜板清洗系统

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4111256A (en) * 1977-04-04 1978-09-05 Globe-Union Inc. Ladle gate
US4711256A (en) 1985-04-19 1987-12-08 Robert Kaiser Method and apparatus for removal of small particles from a surface
US5061024C1 (en) * 1989-09-06 2002-02-26 Dupont Photomasks Inc Amorphous fluoropolymer pellicle films
US5168001A (en) * 1991-05-20 1992-12-01 E. I. Du Pont De Nemours And Company Perfluoropolymer coated pellicle
JPH10308337A (ja) 1997-05-01 1998-11-17 Oki Electric Ind Co Ltd ホトマスクの洗浄方法及びその洗浄用治具
US6280885B1 (en) * 1999-08-11 2001-08-28 Dupont Photomasks, Inc. Dust cover comprising anti-reflective coating
EP1388026A1 (de) 2001-05-14 2004-02-11 E.I. Du Pont De Nemours & Company Incorporated Verwendung von teilweise fluorierten polymeren für anwendungen die ultraviolet und vakuum ultraviolet tranzparenz erfordern

Also Published As

Publication number Publication date
JP4137990B2 (ja) 2008-08-20
CN1517799A (zh) 2004-08-04
US7022437B2 (en) 2006-04-04
KR100599941B1 (ko) 2006-07-12
TWI275901B (en) 2007-03-11
JP2004220032A (ja) 2004-08-05
EP1439421A3 (de) 2004-12-29
TW200424756A (en) 2004-11-16
EP1439421B1 (de) 2007-08-08
US20040137336A1 (en) 2004-07-15
SG120971A1 (en) 2006-04-26
JP2008116979A (ja) 2008-05-22
DE602004007961T2 (de) 2008-04-17
KR20040066022A (ko) 2004-07-23
EP1439421A2 (de) 2004-07-21
JP4083125B2 (ja) 2008-04-30

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee