JP2004200234A5 - - Google Patents

Download PDF

Info

Publication number
JP2004200234A5
JP2004200234A5 JP2002364009A JP2002364009A JP2004200234A5 JP 2004200234 A5 JP2004200234 A5 JP 2004200234A5 JP 2002364009 A JP2002364009 A JP 2002364009A JP 2002364009 A JP2002364009 A JP 2002364009A JP 2004200234 A5 JP2004200234 A5 JP 2004200234A5
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2002364009A
Other versions
JP4856350B2 (ja
JP2004200234A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2002364009A priority Critical patent/JP4856350B2/ja
Priority claimed from JP2002364009A external-priority patent/JP4856350B2/ja
Priority to US10/729,983 priority patent/US7164187B2/en
Priority to EP03028498A priority patent/EP1432015A3/en
Publication of JP2004200234A publication Critical patent/JP2004200234A/ja
Publication of JP2004200234A5 publication Critical patent/JP2004200234A5/ja
Application granted granted Critical
Publication of JP4856350B2 publication Critical patent/JP4856350B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

JP2002364009A 2002-12-16 2002-12-16 ダイオード Expired - Fee Related JP4856350B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2002364009A JP4856350B2 (ja) 2002-12-16 2002-12-16 ダイオード
US10/729,983 US7164187B2 (en) 2002-12-16 2003-12-09 Semiconductor and semiconductor substrate, method of manufacturing the same, and semiconductor device
EP03028498A EP1432015A3 (en) 2002-12-16 2003-12-12 Semiconductor and semiconductor substrate, method of manufacturing the same, and semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2002364009A JP4856350B2 (ja) 2002-12-16 2002-12-16 ダイオード

Publications (3)

Publication Number Publication Date
JP2004200234A JP2004200234A (ja) 2004-07-15
JP2004200234A5 true JP2004200234A5 (ja) 2005-12-15
JP4856350B2 JP4856350B2 (ja) 2012-01-18

Family

ID=32376211

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002364009A Expired - Fee Related JP4856350B2 (ja) 2002-12-16 2002-12-16 ダイオード

Country Status (3)

Country Link
US (1) US7164187B2 (ja)
EP (1) EP1432015A3 (ja)
JP (1) JP4856350B2 (ja)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060011906A1 (en) * 2004-07-14 2006-01-19 International Business Machines Corporation Ion implantation for suppression of defects in annealed SiGe layers
JP2006073770A (ja) * 2004-09-02 2006-03-16 Namiki Precision Jewel Co Ltd エピタキシャル成長用基板の製造方法
US7391058B2 (en) * 2005-06-27 2008-06-24 General Electric Company Semiconductor devices and methods of making same
JP2007027630A (ja) * 2005-07-21 2007-02-01 Kansai Electric Power Co Inc:The バイポーラ型半導体装置およびその製造方法
TWI293805B (en) * 2006-01-24 2008-02-21 Ind Tech Res Inst Ultraviolet detector
JP4503060B2 (ja) * 2007-09-21 2010-07-14 Ｏｋｉセミコンダクタ株式会社 紫外線センサ、紫外線センサの設定方法
JP2010184833A (ja) * 2009-02-12 2010-08-26 Denso Corp 炭化珪素単結晶基板および炭化珪素単結晶エピタキシャルウェハ
JP5345499B2 (ja) * 2009-10-15 2013-11-20 Ｈｏｙａ株式会社 化合物単結晶およびその製造方法
JP5693946B2 (ja) * 2010-03-29 2015-04-01 エア・ウォーター株式会社 単結晶３Ｃ−ＳｉＣ基板の製造方法
JP2011258768A (ja) * 2010-06-09 2011-12-22 Sumitomo Electric Ind Ltd 炭化珪素基板、エピタキシャル層付き基板、半導体装置および炭化珪素基板の製造方法
WO2012157670A1 (ja) * 2011-05-18 2012-11-22 Hoya株式会社 炭化珪素基板
TWI528580B (zh) 2012-03-30 2016-04-01 聖戈班晶體探測器公司 形成獨立式半導體晶圓之方法
US9275861B2 (en) 2013-06-26 2016-03-01 Globalfoundries Inc. Methods of forming group III-V semiconductor materials on group IV substrates and the resulting substrate structures
GB2542788A (en) * 2015-09-29 2017-04-05 Univ Warwick 3C-SiC based sensor
DE102022113729A1 (de) 2022-01-21 2023-07-27 Infineon Technologies Ag Halbleitervorrichtung mit metallnitridschicht und ein verfahren zum herstellen von dieser

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3230650B2 (ja) * 1996-03-27 2001-11-19 富士電機株式会社 炭化けい素半導体基板とその製造方法およびその基板を用いた炭化けい素半導体素子
JP3880717B2 (ja) 1997-12-19 2007-02-14 Ｈｏｙａ株式会社 炭化珪素の製造方法
US6608327B1 (en) * 1998-02-27 2003-08-19 North Carolina State University Gallium nitride semiconductor structure including laterally offset patterned layers
JP3576432B2 (ja) 1998-10-10 2004-10-13 Ｈｏｙａ株式会社 炭化珪素膜及びその製造方法
US6416578B1 (en) 1999-10-08 2002-07-09 Hoya Corporation Silicon carbide film and method for manufacturing the same
JP4032538B2 (ja) * 1998-11-26 2008-01-16 ソニー株式会社 半導体薄膜および半導体素子の製造方法
JP4068742B2 (ja) 1998-12-11 2008-03-26 株式会社神戸製鋼所 耐熱割れ性及び耐食性に優れた半導体製造装置用陽極酸化皮膜被覆部材の製造方法
US6475456B2 (en) 2000-02-29 2002-11-05 Hoya Corporation Silicon carbide film and method for manufacturing the same
JP4563609B2 (ja) * 2000-04-07 2010-10-13 Ｈｏｙａ株式会社 炭化珪素の製造方法
JP3650727B2 (ja) 2000-08-10 2005-05-25 Ｈｏｙａ株式会社 炭化珪素製造方法
JP3754294B2 (ja) * 2000-12-28 2006-03-08 株式会社東芝 炭化珪素単結晶基板の製造方法及び半導体装置の製造方法

Similar Documents

Publication Publication Date Title
BE2019C547I2 (ja)
BE2019C510I2 (ja)
BE2018C021I2 (ja)
BE2017C049I2 (ja)
BE2017C005I2 (ja)
BE2016C069I2 (ja)
BE2016C040I2 (ja)
BE2016C013I2 (ja)
BE2018C018I2 (ja)
BE2016C002I2 (ja)
BE2011C038I2 (ja)
JP2003186566A5 (ja)
IN2005CN00268A (ja)
BRPI0302144B1 (ja)
JP2003080678A5 (ja)
BRPI0215435A2 (ja)
JP2003243671A5 (ja)
JP2003087226A5 (ja)
JP2004200234A5 (ja)
JP2003218362A5 (ja)
JP2003138109A5 (ja)
JP2003225441A5 (ja)
JP2003208759A5 (ja)
JP2003005095A5 (ja)
BR0315835A2 (ja)