JP2003243671A5 - - Google Patents

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Publication number
JP2003243671A5
JP2003243671A5 JP2002042535A JP2002042535A JP2003243671A5 JP 2003243671 A5 JP2003243671 A5 JP 2003243671A5 JP 2002042535 A JP2002042535 A JP 2002042535A JP 2002042535 A JP2002042535 A JP 2002042535A JP 2003243671 A5 JP2003243671 A5 JP 2003243671A5
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JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2002042535A
Other versions
JP3914785B2 (ja
JP2003243671A (ja
Filing date
Publication date
Application filed filed Critical
Priority claimed from JP2002042535A external-priority patent/JP3914785B2/ja
Priority to JP2002042535A priority Critical patent/JP3914785B2/ja
Priority to US10/367,858 priority patent/US6768138B1/en
Priority to DE60322991T priority patent/DE60322991D1/de
Priority to EP03003831A priority patent/EP1341238B1/en
Priority to EP03003832A priority patent/EP1339105B1/en
Priority to EP10178736.4A priority patent/EP2259325B1/en
Priority to US10/369,101 priority patent/US7135718B2/en
Publication of JP2003243671A publication Critical patent/JP2003243671A/ja
Publication of JP2003243671A5 publication Critical patent/JP2003243671A5/ja
Publication of JP3914785B2 publication Critical patent/JP3914785B2/ja
Application granted granted Critical
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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JP2002042535A 2002-02-20 2002-02-20 ダイオード素子 Expired - Fee Related JP3914785B2 (ja)

Priority Applications (7)

Application Number Priority Date Filing Date Title
JP2002042535A JP3914785B2 (ja) 2002-02-20 2002-02-20 ダイオード素子
US10/367,858 US6768138B1 (en) 2002-02-20 2003-02-19 Diode element
EP03003832A EP1339105B1 (en) 2002-02-20 2003-02-20 Diode element
EP03003831A EP1341238B1 (en) 2002-02-20 2003-02-20 Diode device and transistor device
DE60322991T DE60322991D1 (de) 2002-02-20 2003-02-20 Diodeanordnung
EP10178736.4A EP2259325B1 (en) 2002-02-20 2003-02-20 Transistor device
US10/369,101 US7135718B2 (en) 2002-02-20 2003-02-20 Diode device and transistor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2002042535A JP3914785B2 (ja) 2002-02-20 2002-02-20 ダイオード素子

Publications (3)

Publication Number Publication Date
JP2003243671A JP2003243671A (ja) 2003-08-29
JP2003243671A5 true JP2003243671A5 (ja) 2005-06-30
JP3914785B2 JP3914785B2 (ja) 2007-05-16

Family

ID=27655252

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002042535A Expired - Fee Related JP3914785B2 (ja) 2002-02-20 2002-02-20 ダイオード素子

Country Status (4)

Country Link
US (1) US6768138B1 (ja)
EP (1) EP1339105B1 (ja)
JP (1) JP3914785B2 (ja)
DE (1) DE60322991D1 (ja)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6841825B2 (en) 2002-06-05 2005-01-11 Shindengen Electric Manufacturing Co., Ltd. Semiconductor device
JP4274771B2 (ja) * 2002-10-04 2009-06-10 新電元工業株式会社 半導体装置
JP3971670B2 (ja) 2002-06-28 2007-09-05 新電元工業株式会社 半導体装置
JP3779243B2 (ja) * 2002-07-31 2006-05-24 富士通株式会社 半導体装置及びその製造方法
US6966101B2 (en) * 2003-09-23 2005-11-22 Door & Window Hardware Co. Handle of a glass door
JP4623259B2 (ja) * 2003-12-05 2011-02-02 サンケン電気株式会社 ショットキバリアを有する半導体装置
JP4773716B2 (ja) 2004-03-31 2011-09-14 株式会社デンソー 半導体基板の製造方法
JP4721653B2 (ja) 2004-05-12 2011-07-13 トヨタ自動車株式会社 絶縁ゲート型半導体装置
US7238976B1 (en) * 2004-06-15 2007-07-03 Qspeed Semiconductor Inc. Schottky barrier rectifier and method of manufacturing the same
JP4940546B2 (ja) * 2004-12-13 2012-05-30 株式会社デンソー 半導体装置
JP4961686B2 (ja) * 2005-06-03 2012-06-27 株式会社デンソー 半導体装置
WO2007075996A2 (en) * 2005-12-27 2007-07-05 Qspeed Semiconductor Inc. Apparatus and method for a fast recovery rectifier structure
EP1850396A3 (en) * 2006-04-28 2008-09-17 Nissan Motor Co., Ltd. Semiconductor device and manufacturing method thereof
JP4695622B2 (ja) 2007-05-02 2011-06-08 株式会社東芝 半導体装置
JP2009059764A (ja) * 2007-08-30 2009-03-19 Panasonic Corp ショットキーバリアダイオードおよびその製造方法
TWI398022B (zh) * 2010-03-17 2013-06-01 Univ Nat Chunghsing Separation method of epitaxial substrate of photovoltaic element
JP5715461B2 (ja) * 2011-03-28 2015-05-07 新電元工業株式会社 半導体装置の製造方法
JP7147141B2 (ja) * 2017-09-11 2022-10-05 Tdk株式会社 ショットキーバリアダイオード
CN109727860A (zh) * 2017-10-30 2019-05-07 全球能源互联网研究院 一种制备碳化硅超结二极管的方法
JP7165322B2 (ja) 2018-03-30 2022-11-04 Tdk株式会社 ショットキーバリアダイオード

Family Cites Families (16)

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Publication number Priority date Publication date Assignee Title
DE1294558B (de) 1961-06-07 1969-05-08 Westinghouse Electric Corp Hochspannungsgleichrichter und Verfahren zum Herstellen
US3391287A (en) 1965-07-30 1968-07-02 Westinghouse Electric Corp Guard junctions for p-nu junction semiconductor devices
US3541403A (en) 1967-10-19 1970-11-17 Bell Telephone Labor Inc Guard ring for schottky barrier devices
GB2089119A (en) 1980-12-10 1982-06-16 Philips Electronic Associated High voltage semiconductor devices
JPS61206262A (ja) * 1985-03-11 1986-09-12 Shindengen Electric Mfg Co Ltd 高耐圧プレ−ナ型半導体装置
JP2908818B2 (ja) * 1989-09-18 1999-06-21 株式会社日立製作所 半導体装置の製造方法
JPH0750791B2 (ja) * 1989-09-20 1995-05-31 株式会社日立製作所 半導体整流ダイオード及びそれを使つた電源装置並びに電子計算機
CN1019720B (zh) 1991-03-19 1992-12-30 电子科技大学 半导体功率器件
EP0586716B1 (de) * 1992-08-10 1997-10-22 Siemens Aktiengesellschaft Leistungs-MOSFET mit verbesserter Avalanche-Festigkeit
US5241195A (en) 1992-08-13 1993-08-31 North Carolina State University At Raleigh Merged P-I-N/Schottky power rectifier having extended P-I-N junction
DE19740195C2 (de) * 1997-09-12 1999-12-02 Siemens Ag Halbleiterbauelement mit Metall-Halbleiterübergang mit niedrigem Sperrstrom
US6204097B1 (en) 1999-03-01 2001-03-20 Semiconductor Components Industries, Llc Semiconductor device and method of manufacture
JP2000312011A (ja) * 1999-04-26 2000-11-07 Rohm Co Ltd 整流用半導体装置
JP4363736B2 (ja) 2000-03-01 2009-11-11 新電元工業株式会社 トランジスタ及びその製造方法
JP3860705B2 (ja) 2000-03-31 2006-12-20 新電元工業株式会社 半導体装置
JP4865166B2 (ja) 2001-08-30 2012-02-01 新電元工業株式会社 トランジスタの製造方法、ダイオードの製造方法

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